Microsemi M2S080-1FG144Y Smartfusion2 system-on-chip fpgas Datasheet

Revision 0
SmartFusion2 System-on-Chip FPGAs
Microsemi’s SmartFusion®2 SoC FPGAs integrate fourth generation flash-based FPGA fabric, an ARM® Cortex™-M3 processor,
and high performance communications interfaces on a single chip. The SmartFusion2 family is the industry’s lowest power, most
reliable and highest security programmable logic solution. This next generation SmartFusion2 architecture offers up to 3.6X gate
count implemented with 4-input look-up table (LUT) fabric with carry chains, giving 2X performance, and includes multiple embedded
memory options and math blocks for digital signal processing (DSP). The 166 MHz ARM Cortex-M3 processor is enhanced with an
embedded trace macrocell (ETM), memory protection unit (MPU), 8 Kbyte instruction cache, and additional peripherals including
controller area network (CAN), Gigabit Ethernet, and high speed universal serial bus (USB). High speed serial interfaces include
peripheral component interconnect express (PCIe), 10 Gbps attachment unit interface (XAUI) / XGMII extended sublayer (XGXS) +
native serialization/deserialization (SERDES) communication, while double data rate 2 (DDR2)/DDR3 memory controllers provide
high speed memory interfaces.
SmartFusion2 Family
Reliability
•
Single Event Upset (SEU) Immune
–
•
•
•
Zero FIT FPGA Configuration Cells
Single Error Correct Double Error Detect (SECDED)
Protection on the Following:
–
Ethernet Buffers
–
CAN Message Buffers
–
Cortex-M3
(eSRAMs)
Embedded
Scratch
Pad
Memory
–
USB Buffers
–
PCIe Buffer
–
DDR Memory Controllers with Optional SECDED
Modes
Buffers Implemented with SEU Resistant Latches on the
Following:
Enhanced Anti-Tamper Features
–
Zeroization
Data Security Features (available on premium devices)
–
Non-Deterministic Random Bit Generator (NRBG)
–
User Cryptographic Services (AES-256, SHA-256,
Elliptical Curve Cryptographic (ECC) Engine)
–
User Physically Unclonable Function (PUF) Key
Enrollment and Regeneration
–
CRI Pass-Through DPA Patent Portfolio License
–
Hardware Firewalls Protecting
Subsystem (MSS) Memories
•
Low Static and Dynamic Power
•
For the M2S050 Device:
–
Flash*Freeze Mode for Fabric
DDR Bridges (MSS, MDDR, FDDR)
–
< 1 mW in Flash*Freeze Mode
–
Instruction Cache
–
10 mW in Standby Mode
–
MMUART FIFOs
–
SPI FIFOs
NVM Integrity Check at Power-Up and On-Demand
•
No External Configuration Memory Required—InstantOn, Retains Configuration When Powered Off
•
•
Efficient 4-Input LUTs with Carry Chains for High
Performance and Low Power
•
Up to 236 Blocks of Dual-Port 18 Kbit SRAM (Large
SRAM) with 400 MHz Synchronous Performance (x18,
x9, x4, x2, x1)
•
Up to 240 Blocks of Three-Port 1 Kbit SRAM with 2
Read Ports and 1 Write Port (micro SRAM)
•
High Performance DSP Signal Processing
Design Security Features (available on all devices)
Intellectual Property (IP) Protection via Unique
Security Features and Use Models New to the PLD
Industry
–
Encrypted User Key and Bitstream Loading,
Enabling Programming in Less-Trusted Locations
–
Supply-Chain Assurance Device Certificate
October 2012
© 2012 Microsemi Corporation
Based on 65 nm Nonvolatile Flash Process
High-Performance FPGA
Security
–
Microcontroller
Low Power
–
•
•
–
–
Up to 240 Fast Math Blocks with 18 x 18 Signed
Multiplication, 17 x 17 Unsigned Multiplication and
44-Bit Accumulator
I
SmartFusion2 System-on-Chip FPGAs
Microcontroller Subsystem (MSS)
•
High Speed Serial Interfaces
Hard 166 MHz 32-Bit ARM Cortex-M3 Processor
–
1.25 DMIPS/MHz
–
8 Kbyte Instruction Cache
–
Embedded Trace Macrocell (ETM)
•
–
Memory Protection Unit (MPU)
–
Single Cycle Multiplication, Hardware Divide
–
JTAG Debug (4 wires), Serial Wire Debug (SWD, 2
wires), and Serial Wire Viewer (SWV) Interfaces
•
64 KB Embedded SRAM (eSRAM)
•
Up to 512 KB Embedded Nonvolatile Memory (eNVM)
•
Triple Speed Ethernet (TSE) 10/100/1000 Mbps MAC
•
USB 2.0 High Speed On-The-Go (OTG) Controller with
ULPI Interface
•
CAN Controller, 2.0B Compliant, Conforms
ISO11898-1, 32 Transmit and 32 Receive Buffers
I2C,
•
Two Each: SPI,
Peripherals
•
Hardware Based Watchdog Timer
•
1 General Purpose 64-Bit (or two 32-bit) Timer(s)
•
–
XGXS/XAUI Extension (to implement a 10 Gbps
(XGMII) Ethernet PHY interface)
–
Native SERDES Interface Facilitates Implementation
of Serial RapidIO in Fabric or an SGMII Interface to
the Ethernet MAC in MSS
–
PCI Express (PCIe) Endpoint Controller
x1, x2, x4 Lane PCI Express Core with 16-bit
PIPE Interface (Gen1/Gen2)
256 Bytes Maximum Payload Size
64-/32-Bit AXI/AHB Master and Slave Interfaces
to the Application Layer
High Speed Memory Interfaces
•
to
Multi-Mode UARTs (MMUART)
Up to 2 High Speed DDRx Memory Controllers
–
MSS DDR (MDDR) and Fabric DDR (FDDR)
Controllers
–
Supports LPDDR/DDR2/DDR3
–
Maximum 333 MHz Clock Rate
–
SECDED Enable/Disable Feature
Real-Time Calendar/Counter (RTC)
–
•
DDR Bridge (4 Port Data R/W Buffering Bridge to DDR
Memory) with 64-Bit AXI Interface
Supports Various DRAM Bus Width Modes, x16,
x18, x32, x36
–
•
Non-Blocking, Multi-Layer AHB Bus Matrix Allowing
Multi-Master Scheme Supporting 10 Masters and 7
Slaves
Supports Command Reordering to Optimize Memory
Efficiency
–
Supports Data Reordering, Returning Critical Word
First for Each Command
•
Two AHB/APB Interfaces to FPGA Fabric (master/slave
capable)
•
•
–
8-Channel Peripheral DMA (PDMA) for Data
Transfer Between MSS Peripherals and Memory
•
1.2 V Core Voltage
•
Multi-Standard User I/Os (MSIO/MSIOD)
High Performance DMA (HPDMA) for Data Transfer
Between eSRAM and DDR Memories
Clocking Resources
•
Clock Sources
–
•
Up to Two High Precision 32 KHz to 20 MHz Main
Crystal Oscillator
–
1 MHz Embedded RC Oscillator
–
50 MHz Embedded RC Oscillator
•
Up to 8 Clock Conditioning Circuits (CCCs) with Up to 8
Integrated Analog PLLs
–
Output Clock with 8 Output Phases and 45° Phase
Difference (Multiply/Divide, and Delay Capabilities)
–
Frequency: Input 1 to 200 MHz, Output 20 to 400
MHz
SDRAM Support
Operating Voltage and I/Os
Two DMA Controllers to Offload Data Transactions from
the Cortex-M3 Processor
–
II
Up to 16 SERDES Lanes, Each Supporting:
R ev i si o n 0
–
LVTTL/LVCMOS 3.3 V
–
LVCMOS 1.2 V, 1.5 V, 1.8 V, 2.5 V
–
DDR (SSTL2_1, SSTL2_2)
–
DDR2 (SSTL18_1, SSTL18_2)
–
LVDS, MLVDS,
Standards
–
PCI
–
LVPECL (receiver only)
Mini-LVDS,
RSDS
Differential
DDR I/Os (DDRIO)
–
DDR, DDR2, DDR3, LPDDR, SSTL2, SSTL18,
HSTL
–
LVCMOS 1.2 V, 1.5 V, 1.8 V, 2.5 V
SmartFusion2 System-on-Chip FPGAs
SmartFusion2 SoC FPGA Block Diagram
JTAG I/O
SPI I/O
Multi-Standard User I/O (MISO)
SPI x 2
MMUART x 2
I2C x 2
Timer x 2
System Controller
AES256
SHA256
ECC
NRBG
Flash*Freeze
SRAM-PUF
DDR User I/O
Microcontroller
Subsystem (MSS)
ARM® Cortex™-M3
D
Instruction
Cache
I
ETM
MPU
S
CAN
APB
HS USB
OTG ULPI
PDMA
WDT
In-Application
Programming
SYSREG
DDR
Bridge
eNVM
RTC
MSS
DDR Controller
+ PHY
AHB Bus Matrix (ABM)
COMM_BLK
Interupts
FPGA Fabric
AHB
Micro SRAM
(64x18)
Micro SRAM
(64x18)
Config
FIC_1
AHB
TSE MAC
OSCs
Serial 0 I/O
eSRAM
SMC_FIC Config
Large SRAM
(1024x18)
Config
HPDMA
AHB
AXI/AHB
Math Block
MACC (18x18)
Large SRAM
(1024x18)
AXI/AHB/XGXS
Serial Controller 0
(PCIe, XAUI/XGXS)
+ Native SERDES
FIC_0
Multi-Standard User I/O (MISO)
Multi-Standard
andard User I/O (MISO)
FIIC
Math Block
MACC (18x18)
Config
AXI/AHB/XGXS
Serial Controller 1
(PCIe, XAUI/XGXS)
+ Native SERDES
PLLs
Serial 1 I/O
AXI/AHB
Fabric DDR
Controller + PHY
Standard Cell /
SEU Immune
Flash Based /
SEU Immune
DDR User I/O
Acronyms
AES
AHB
APB
AXI
COMM_BLK
DDR
DPA
ECC
EDAC
ETM
FDDR
FIC
FIIC
HS USB OTG
IAP
MACC
Advanced Encryption Standard
Advanced High-Performance Bus
Advanced Peripheral Bus
Advanced eXtensible Interface
Communication Block
Double Data Rate
Differential Power Analysis
Elliptical Curve Cryptography
Error Detection And Correction
Embedded Trace Macrocell
DDR2/3 controller in FPGA fabric
Fabric Interface Controller
Fabric Interface Interrupt Controller
High Speed USB 2.0 On-The-Go
In-Application Programming
Multiply-Accumulate
MDDR
MMUART
MPU
MSS
SECDED
SEU
SHA
SMC_FIC
TSE
ULPI
UTMI
WDT
XAUI
XGMII
XGXS
R e visi on 0
DDR2/3 Controller in MSS
Multi-Mode UART
Memory Protection Unit
Microcontroller Subsystem
Single Error Correct Double Error Detect
Single Event Upset
Secure Hashing Algorithm
Soft Memory Controller
Triple Speed Ethernet (10/100/1000 Mbps)
UTMI + Low Pin Interface
USB 2.0 Transceiver Macrocell Interface
Watchdog Timer
10 Gbps Attachment Unit Interface
10 Gigabit Media Independent Interface
XGMII Extended Sublayer
III
SmartFusion2 System-on-Chip FPGAs
Table 1 • SmartFusion2 SoC FPGA Product Family
Features
FPGA
Logic Modules (4-Input LUT)
M2S005
M2S010
M2S025
M2S050
M2S080
M2S120
4,956
9,744
23,988
48,672
82,232
120,348
LSRAM 18K Blocks
10
21
31
69
160
236
uSRAM 1K Blocks
11
22
34
72
160
240
191K
400K
592K
1,314K
3,040K
4,500K
Math Blocks
11
22
34
72
160
240
PLLs and CCCs
2
2
4
6
8
8
Total RAM (Bits)
MSS
Cortex-M3 Processor + Instruction Cache
Yes
Yes
Yes
Yes
Yes
Yes
eNVM (Bytes)
128K
256K
256K
256K
512K
512K
eSRAM (Bytes)
64K
64K
64K
64K
64K
64K
eSRAM (Bytes non-SECDED)
80K
80K
80K
80K
80K
80K
CAN 2.0 A and B
1
1
1
1
1
1
Triple speed Ethernet 10/100/1000
1
1
1
1
1
1
USB 2.0 High Speed On-The-Go
1
1
1
1
1
1
Multi-Mode UART
2
2
2
2
2
2
SPI
2
2
2
2
2
2
I2C
2
2
2
2
2
2
User I/O
Memory,
Serial I/F
Timer
2
2
2
2
2
2
1x18
1x18
1x18
2x36
2x36
2x36
SERDES Channels
0
4
4
8
8
16
PCIe Endpoint × 4
0
1
1
2
2
4
3.3 V Multi-Standard User I/Os (MSIOs)
123
123
159
139
292
292
MSIOD I/Os
28
40
40
62
106
106
DDRIO I/Os
66
70
90
176
176
176
Total User I/Os
217
233
289
377
574
574
SERDES I/Os
0
16
16
32
64
64
217
249
305
409
638
638
DDR Controllers
Total User I/Os + SERDES I/Os
I/Os Per Package
Table 2 • I/Os per Package and Package Options
Package Options
VF400
FG484
FG896
FC1152
400
484
896
1,152
Pin Count
Ball Pitch (mm)
Length × Width (mm\mm)
0.8
1.0
1.0
1.0
17 × 17
23 × 23
31 × 31
35 × 35
I/Os
XCVRs
I/Os
XCVRs
I/Os
XCVRs
I/Os
XCVRs
M2S005
160
–
217
–
–
–
–
–
M2S010
160
4
233
4
–
–
–
–
M2S025
160
4
267
4
–
–
–
–
M2S050
160
4
267
4
377
8
–
–
M2S080
–
–
–
–
–
–
574
8
M2S120
–
–
–
–
–
–
574
16
Note: User I/Os do not include the SERDES and JTAG pins.
IV
R ev i si o n 0
SmartFusion2 System-on-Chip FPGAs
SmartFusion2 Ordering Information
.
M2S050
T
S
_
1
FG
G
144
Y
I
Application (Temperature Range)
Blank = Commercial (0°C to +85°C Ambient Temperature)
I = Industrial (–40°C to +100°C Ambient Temperature)
ES = Engineering Sample (Room Temperature Only)
Security Feature
Y = Device Includes License to Implement IP Based on the
Cryptography Research, Inc. (CRI) Patent Portfolio
Package Lead Count
Lead-Free Packaging
Blank = Standard Packaging
G = RoHS-Compliant
Package Type
FG = Fine Pitch Ball Grid Array (1.0 mm pitch)
VF = Very Fine Pitch Ball Grid Array (0.8 mm pitch)
Speed Grade
Blank = TBD
1 = TBD
Security
Blank = Design Security
S = Data and Design Security
Transceiver
T = With Transceiver
Blank = No Transceiver
Part Number (Digits Indicate Thousands of LUTs)
M2S005
M2S010
M2S025
M2S050
M2S080
M2S120
R e visi on 0
V
SmartFusion2 System-on-Chip FPGAs
SmartFusion2 Valid Part Numbers
Table 3 • SmartFusion2 Valid Part Numbers for Devices with Design Security
Commercial
Industrial
Std. Speed Grade
–1 Speed Grade
–1 Speed Grade
–1 Speed Grade, Data Security
M2S005-VF400
M2S005-1VF400
M2S005-1VF400I
M2S005S-1VF400I
M2S010-VF400
M2S010-1VF400
M2S010-1VF400I
M2S010S-1VF400I
M2S025-VF400
M2S025-1VF400
M2S025-1VF400I
M2S025S-1VF400I
M2S050-VF400
M2S050-1VF400
M2S050-1VF400I
M2S050S-1VF400I
M2S005-FG484
M2S005-1FG484
M2S005-1FG484I
M2S005S-1FG484I
M2S010-FG484
M2S010-1FG484
M2S010-1FG484I
M2S010S-1FG484I
M2S025-FG484
M2S025-1FG484
M2S025-1FG484I
M2S025S-1FG484I
M2S050-FG484
M2S050-1FG484
M2S050-1FG484I
M2S050S-1FG484I
M2S050-FG896
M2S050-1FG896
M2S050-1FG896I
M2S050S-1FG896I
M2S080-FC1152
M2S080-1FC1152
M2S080-1FC1152I
M2S080S-1FC1152I
M2S120-FC1152
M2S120-1FC1152
M2S120-1FC1152I
M2S120S-1FC1152I
Transceivers
Transceivers
Transceivers
Transceivers
M2S010T-VF400
M2S010T-1VF400
M2S010T-1VF400I
M2S010TS-1VF400I
M2S025T-VF400
M2S025T-1VF400
M2S025T-1VF400I
M2S025TS-1VF400I
M2S050T-VF400
M2S050T-1VF400
M2S050T-1VF400I
M2S050TS-1VF400I
M2S010T-FG484
M2S010T-1FG484
M2S010T-1FG484I
M2S010TS-1FG484I
M2S025T-FG484
M2S025T-1FG484
M2S025T-1FG484I
M2S025TS-1FG484I
M2S050T-FG484
M2S050T-1FG484
M2S050T-1FG484I
M2S050TS-1FG484I
M2S050T-FG896
M2S050T-1FG896
M2S050T-1FG896I
M2S050TS-1FG896I
M2S080T-FC1152
M2S080T-1FC1152
M2S080T-1FC1152I
M2S080TS-1FC1152I
M2S120T-FC1152
M2S120T-1FC1152
M2S120T-1FC1152I
M2S120TS-1FC1152I
SmartFusion2 Device Status
Family Devices
Status
M2S050T
Advance
Contact your local Microsemi SoC Products Group representative for device availability:
http://www.microsemi.com/soc/contact/default.aspx.
VI
R ev i si o n 0
SmartFusion2 System-on-Chip FPGAs
Table of Contents
SmartFusion2 Device Family Overview
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Highest Security Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Performance FPGA Fabric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Microcontroller Subsystem (MSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clock Sources: On-Chip Oscillators, PLLs, and CCCs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Serial Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Memory Interfaces: DDRx Memory Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1-2
1-2
1-3
1-3
1-4
1-8
1-8
1-9
SmartFusion2 DC and Switching Characteristics
General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-5
Average Fabric Temperature and Voltage Derating Factors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-14
Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-15
User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17
Logic Module Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-73
Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76
FPGA Fabric SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-77
On-Chip Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-80
Clock Conditioning Circuits (CCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-82
Serial Peripheral Interface (SPI) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-83
Inter-Integrated Circuit (I2C) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-85
SmartFusion2 Development Tools
Libero SoC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
SoftConsole . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
SoftConsole User Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Firmware Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-6
Firmware Catalog User Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7
SoC FPGA Ecosystem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-8
SmartFusion2 Development Kit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-12
Pin Descriptions
Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1
Dedicated Global I/O Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-4
User I/O Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-4
Multi-Standard I/O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5
JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-9
Microcontroller Subsystem (MSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-10
Multi-Function I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-12
FG896 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-13
Datasheet Information
Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
Revision 0
VII
1 – SmartFusion2 Device Family Overview
Microsemi’s SmartFusion2 SoC FPGAs integrate fourth generation flash-based FPGA fabric, an ARM
Cortex-M3 processor and high performance communications interfaces on a single chip. The
SmartFusion2 family is the industry’s lowest power, highest reliability and most secure programmable
logic solution. This next generation SmartFusion2 architecture offers up to 3.6X gate count implemented
with 4-input look-up table (LUT) fabric with carry chains, giving 2X performance, and includes multiple
embedded memory options and math blocks for DSP. The 166 MHz ARM Cortex-M3 processor is
enhanced with ETM and 8 Kbyte instruction cache, and additional peripherals including CAN, Gigabit
Ethernet, and high speed USB. High speed serial interfaces enable PCIe, XAUI / XGXS + Native
SERDES communication while DDR2/DDR3 memory controllers provide high speed memory interfaces.
SmartFusion2 Chip Layout
4 PLLs
4 PLLs
SERDES
MSS DDR
uSRAM
(1 Kb)
East IOs
West IOs
FPGA
Fabric
eNVM
Math
Blocks
HVBias
LSRAM
(18 Kb)
Oscillators
MSS
Column
Access
Fabric DDR
SERDES
Crystal
3 PLLs
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SmartFusion2 Device Family Overview
Reliability
SmartFusion2 flash-based fabric has zero FIT configuration rate due to its single event upset (SEU)
immunity, which is critical in reliability applications. The flash fabric also has the advantage that no
external configuration memory is required, making the device instant-on; it retains configuration when
powered off. To complement this unique FPGA capability, SmartFusion2 adds reliability to many other
aspects of the device. Single Error Correct Double Error Detect (SECDED) protection is implemented on
the Cortex-M3 embedded scratch pad memory, Ethernet, CAN and USB buffers, and is optional on the
DDR memory controllers. This means that if a one-bit error is detected, it will be corrected. Errors of
more than one bit are detected only and not corrected. SECDED error signals are brought to the FPGA
fabric to allow the user to monitor the status of these protected internal memories. Other areas of the
architecture are implemented with latches, which are not subject to SEUs. Therefore, no correction is
needed in these locations: DDR Bridges (MSS, MDDR, FDDR), Instruction Cache and MMUART, SPI,
and PCIe FIFOs.
Highest Security Devices
Building further on the intrinsic security benefits of flash nonvolatile memory technology, the
SmartFusion2 family incorporates essentially all the legacy security features that made the original
SmartFusion, Fusion®, IGLOO®, and ProASIC®3 third-generation flash FPGAs and cSoCs the gold
standard for secure devices in the PLD industry. In addition, the fourth-generation flash-based
SmartFusion2 SoC FPGAs add many unique design and data security features and use models new to
the PLD industry.
Design Security vs. Data Security
When classifying security attributes of programmable logic devices (PLDs), a useful distinction is made
between design security and data security.
Design Security
Design security is protecting the intent of the owner of the design, such as keeping the design and
associated bitstream keys confidential, preventing design changes (insertion of Trojan Horses, for
example), and controlling the number of copies made throughout the device life cycle. Design security
may also be known as intellectual property (IP) protection. It is one aspect of anti-tamper (AT) protection.
Design security applies to the device from initial production, includes any updates such as in-the-field
upgrades, and can include decommissioning of the device at the end of its life, if desired. Good design
security is a prerequisite for good data security.
The following are the main design security features supported:
•
User key and bitstream loading in less-trusted locations
–
1-2
Encrypted key loading using device-unique built-in factory key
•
Methods to verify devices are programmed correctly, even if done in less-trusted locations
•
Supply-chain assurances to eliminate counterfeiting
•
Differential power analysis (DPA) and enhanced anti-tamper features to address non-invasive,
semi-invasive, and invasive attacks
•
Ability to zeroize (destroy) all sensitive stored data in the event of tampering
•
The M2S080 and M2S120 also have the following features:
–
Elliptic Curve Cryptography (ECC) for securely loading user keys
–
An SRAM-type Physically Unclonable Function (SRAM-PUF) for device authentication
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SmartFusion2 System-on-Chip FPGAs
Data Security
Data security is protecting the information the FPGA is storing, processing, or communicating in its role in
the end application. If, for example, the configured design is implementing the key management and
encryption portion of a secure military radio, data security could entail encrypting and authenticating the
radio traffic, and protecting the associated application-level cryptographic keys. Data security is closely
related to the terms information assurance (IA) and information security.
All SmartFusion2 devices incorporate enhanced design security, making them the most secure
programmable logic devices ever made. Select SmartFusion2 models also include an advanced set of
on-chip data security features that make designing secure information assurance applications easier and
better than ever before.
The following are the main data security features supported:
•
Non-deterministic random bit generator (NRBG) service
•
User Cryptographic services (e.g., AES-128/-256, SHA-256, and HMAC)
•
Hardware firewalls protecting MSS memories
•
Cryptography Research Inc. (CRI) pass-through Differential Power Analysis (DPA) Patent
Portfolio license
•
The M2S080 and M2S120 also have the following features:
–
Elliptic Curve Cryptography (ECC) cryptographic computation services
–
User PUF key enrollment and regeneration for advanced design and data security
applications
Low Power
Microsemi’s flash-based FPGA fabric results in extremely low power design implementation with static
power on the M2S050 device as low as 10 mW. Flash*Freeze (F*F) technology provides an ultra-low
power static mode (Flash*Freeze mode) for SmartFusion2 devices, with power less than 1 mW. F*F
mode entry retains all the SRAM and register information and the exit from F*F mode achieves rapid
recovery to active mode.
High Performance FPGA Fabric
Built on 65 nm process technology, the SmartFusion2 FPGA fabric is composed of 4 building blocks: the
logic module, the large SRAM, the micro SRAM and the Math block. The logic module is the basic logic
element and has advanced features:
•
A fully permutable 4-input LUT (look-up table) optimized for lowest power
•
A dedicated carry chain based on carry look-ahead technique
•
A separate flip-flop which can be used independently from the LUT
The 4-input look-up table can be configured either to implement any 4-input combinatorial function or to
implement an arithmetic function where the LUT output is XORed with carry input to generate the sum
output.
Dual-Port Large SRAM (LSRAM)
Large SRAM (RAM1Kx18) is targeted for storing large memory for use with various operations. Each
LSRAM block can store up to 18,432 bits. Each RAM1Kx18 block contains two independent data ports:
Port A and Port B. The LSRAM is synchronous for both Read and Write operations. Operations are
triggered on the rising edge of the clock. The data output ports of the LSRAM have pipeline registers
which have control signals that are independent of the SRAM’s control signals.
Three-Port Micro SRAM (uSRAM)
Micro SRAM (RAM64x18) is the second type of SRAM which is embedded in the fabric of SmartFusion2
devices. RAM64x18 uSRAM is a 3-port SRAM; it has two read ports (Port A and Port B) and one write
Revision 0
1 -3
SmartFusion2 Device Family Overview
port (Port C). The two read ports are independent of each other and can perform Read operations in both
synchronous and asynchronous modes. The write port is always synchronous. The uSRAM block is
approximately 1 Kb (1,152 bits) in size. These uSRAM blocks are primarily targeted for building
embedded FIFOs to be used by any embedded fabric masters.
Math Blocks for DSP Applications
The fundamental building block in any digital signal processing algorithm is the multiply-accumulate
function. SmartFusion2 implements a custom 18x18 Multiply-Accumulate (18x18 MACC) block for
efficient implementation of complex DSP algorithms such as finite impulse response (FIR) filters, infinite
impulse response (IIR) filters, and fast Fourier transform (FFT) for filtering and image processing
applications.
Each Math block has the following capabilities:
•
Supports 18x18 signed multiplications natively (a[17:0] x b[17:0])
•
Supports dot product; the multiplier computes:
(A[8:0] x B[17:9] + A[17:9] x B[8:0]) x 29
•
Built-in addition, subtraction, and accumulation units to combine multiplication results efficiently
In addition to the basic MACC function, DSP algorithms typically need small amounts of RAM for
coefficients and larger RAMs for data storage. SmartFusion2 micro RAMs are ideally suited to serve the
needs of coefficient storage while the large RAMs are used for data storage.
Microcontroller Subsystem (MSS)
The microcontroller subsystem (MSS) contains a high-performance integrated Cortex-M3 processor,
running at up to 166 MHz. The MSS contains an 8 Kbyte instruction cache to provide low latency access
to internal eNVM and external DDR memory. The MSS provides multiple interfacing options to the FPGA
fabric in order to facilitate tight integration between the MSS and user logic in the fabric.
ARM Cortex-M3 Processor
The MSS uses the latest revision (r2p1) of the ARM Cortex-M3 processor. Microsemi’s implementation
includes the optional embedded trace macrocell (ETM) features for easier development and debug and
the memory protection unit (MPU) for real-time operating system support.
Cache Controller
In order to minimize latency for instruction fetches when executing firmware out of off-chip DDR or
on-chip eNVM, an 8 kbyte, 4-way set associative instruction cache is implemented. This provides zero
wait state access for cache hits and is shared by both I and D Code buses of the Cortex-M3 processor. In
the event of cache misses, cache lines are filled, replacing existing cache entries based on a least
recently used (LRU) algorithm.
There is a configurable option available to operate the cache in a locked mode, whereby a fixed segment
of code from either the DDR or eNVM is copied into the cache and locked there, so that it is not replaced
when cache misses occur. This would be used for performance-critical code.
It is also possible to disable the cache altogether, which is desirable in systems requiring very
deterministic execution times.
The cache is implemented with SEU tolerant latches.
DDR Bridge
The DDR bridge is a data bridge between four AHB bus masters and a single AXI bus slave. The DDR
bridge accumulates AHB writes into write combining buffers prior to bursting out to external DDR
memory. The DDR bridge also includes read combining buffers, allowing AHB masters to efficiently read
data from the external DDR memory from a local buffer. The DDR bridge optimizes reads and writes from
multiple masters to a single external DDR memory. Data coherency rules between the four masters and
1-4
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
the external DDR memory are implemented in hardware. The DDR Bridge contains three write
combining / read buffers and one read buffer. All buffers within the DDR bridge are implemented with
SEU tolerant latches and are not subject to the single event upsets (SEUs) that SRAM exhibits.
SmartFusion2 devices implement three DDR bridges in the MSS, FDDR, and MDDR subsystems.
AHB Bus Matrix (ABM)
The AHB bus matrix (ABM) is a non-blocking, AHB-Lite multi-layer switch, supporting 10 master
interfaces and 7 slave interfaces. The switch decodes access attempts by masters to various slaves,
according to the memory map and security configurations. When multiple masters are attempting to
access a particular slave simultaneously, an arbiter associated with that slave decides which master
gains access, according to a configurable set of arbitration rules. These rules can be configured by the
user to provide different usage patterns to each slave. For example, a number of consecutive access
opportunities to the slave can be allocated to one particular master, to increase the likelihood of same
type accesses (all reads or all writes), which makes more efficient usage of the bandwidth to the slave.
System Registers
The MSS System registers are implemented as an AHB slave on the AHB bus matrix. This means the
Cortex-M3 processor or a soft master in the FPGA fabric may access the registers and therefore control
the MSS. The System registers can be initialized by user-defined flash configuration bits on power-up.
Each register also has a flash bit to enable write protecting the contents of the registers. This allows the
MSS system configuration to be reliably fixed for a given application.
Fabric Interface Controller (FIC)
The FIC block provides two separate interfaces between the MSS and the FPGA fabric: the MSS Master
(MM) and Fabric Master (FM). Each of these interfaces can be configured to operate as AHB-Lite or
APB3. Depending on device density, there are up to two FIC blocks present in the MSS (FIC_0 and
FIC_1).
Embedded SRAM (eSRAM)
The MSS contains two blocks of 32 KB eSRAM, giving a total of 64 KB. Having the eSRAM arranged as
two separate blocks allows the user to take advantage of the Harvard architecture of the Cortex-M3
processor. For example, code could be located in one eSRAM, while data, such as the stack, could be
located in the other.
The eSRAM is designed for Single Error Correct Double Error Detect (SECDED) protection. When
SECDED is disabled, the SRAM usually used to store SECDED data may be reused as an extra 16 KB
of eSRAM.
Embedded NVM (eNVM)
The MSS contains up to 512 KB of eNVM (64 bits wide). Accesses to the eNVM from the Cortex-M3
processor are cacheable.
Revision 0
1 -5
SmartFusion2 Device Family Overview
DMA Engines
Two DMA engines are present in the MSS: high performance DMA and peripheral DMA.
High Performance DMA (HPDMA)
The high-performance DMA (HPDMA) engine provides efficient memory to memory data transfers
between an external DDR memory and internal eSRAM. This engine has two separate AHB-Lite
interfaces—one to the MDDR bridge and the other to the AHB bus matrix. All transfers by the HPDMA
are full word transfers.
Peripheral DMA (PDMA)
The peripheral DMA engine (PDMA) is tuned for offloading byte-intensive operations, involving MSS
peripherals, to and from the internal eSRAMs. Data transfers can also be targeted to user logic/RAM in
the FPGA fabric.
APB Configuration Bus
On every SmartFusion2 device memory, an APB configuration bus is present to allow the user to initialize
the SERDES ASIC blocks, the fabric DDR memory controller, and user instantiated peripherals in the
FPGA fabric.
Peripherals
A large number of communications and general purpose peripherals are implemented in the MSS.
USB Controller
The MSS contains a high speed USB 2.0 On-The-Go (OTG) controller with the following features:
•
Operates either as the function controller of a high-speed / full-speed USB peripheral or as the
host/peripheral in point-to-point or multi-point communications with other USB functions.
•
Complies with the USB 2.0 standard for high-speed functions and with the On-The-Go
supplement to the USB 2.0 specification.
•
Supports OTG communications with one or more high-speed, full-speed, or low-speed devices.
TSE Ethernet MAC
The Triple Speed Ethernet (TSE) MAC supports IEEE 802.3 10/100/1000Mbps Ethernet operation. The
following PHY interfaces are directly supported by the MAC:
•
RMII
•
GMII
•
MII
•
TBI
The Ethernet MAC hardware implements the following functions:
•
4 KB internal transmit FIFO and 8 KB internal receive FIFO
•
IEEE 802.3X full-duplex flow control
•
DMA of Ethernet frames between internal FIFOs and system memory (such as eSRAM or DDR)
•
Cut-through operation
•
SECDED protection on internal FIFOs
SGMII PHY Interface
SGMII mode is implemented by means of configuring the MAC for 10-bit interface (TBI) operation,
allocating one of the high-speed serial channels to SGMII and by implementing custom logic in the fabric.
10 Gbps Ethernet
Support for 10 Gbps Ethernet is achieved by programming the SERDES interface to XAUI mode. In this
mode, a soft 10G EMAC with XGMII interface can be directly connected to the SERDES. interface.
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SmartFusion2 System-on-Chip FPGAs
Communication Block (COMM_BLK)
The COMM block provides a UART-like communications channel between the MSS and the System
Controller. System services are initiated through the COMM block. System services such as Enter
Flash*Freeze Mode are initiated though this block.
SPI
The serial peripheral interface controller is compliant with the Motorola SPI, Texas Instruments
synchronous serial, and National Semiconductor MICROWIRE™ formats. In addition, the SPI supports
interfacing to large SPI flash and EEPROM devices by way of the slave protocol engine. The SPI
controller supports both Master and Slave modes of operation.
The SPI controller embeds two 4×32 (depth × width) FIFOs for receive and transmit. These FIFOs are
accessible through RX data and TX data registers. Writing to the TX data register causes the data to be
written to the transmit FIFO. This is emptied by transmit logic. Similarly, reading from the RX data register
causes data to be read from the receive FIFO.
Multi-Mode UART (MMUART)
SmartFusion2 devices contain two identical multi-mode universal asynchronous/synchronous
receiver/transmitter (MMUART) peripherals that provide software compatibility with the popular 16550
device. They perform serial-to-parallel conversion on data originating from modems or other serial
devices, and perform parallel-to-serial conversion on data from the Cortex-M3 processor to these
devices.
The following are the main features supported:
•
Fractional baud rate capability
•
Asynchronous and synchronous operation
•
Full programmable serial interface characteristics
•
–
Data width is programmable to 5, 6, 7, or 8 bits
–
Even, odd, or no-parity bit generation/detection
–
1,1½, and 2 stop bit generation
9-bit address flag capability used for multidrop addressing topologies
I2C
SmartFusion2 devices contain two identical master/slave I2C peripherals that perform serial to-parallel
conversion on data originating from serial devices, and perform parallel-to-serial conversion on data from
the ARM Cortex-M3 processor, or any other bus master, to these devices. The following are the main
features supported:
•
I2C v2.1
–
100 Kbps
–
400 Kbps
•
Dual-slave addressing
•
SMBus v2.0
•
PMBus v1.1
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1 -7
SmartFusion2 Device Family Overview
Clock Sources: On-Chip Oscillators, PLLs, and CCCs
SmartFusion2 devices have two on-chip RC oscillators—a 1 MHz RC oscillator and a 50 MHz RC
oscillator—and up to two main crystal oscillators (32 KHz–20 MHz). These are available to the user for
generating clocks to the on-chip resources and the logic built on the FPGA fabric array. The second
crystal oscillator available on the SmartFusion2 devices is dedicated for RTC clocking. These oscillators
(except the RTC crystal oscillator) can be used in conjunction with the integrated user phase-locked
loops (PLLs) and FAB_CCCs to generate clocks of varying frequency and phase. In addition to being
available to the user, these oscillators are also used by the system controller, power-on reset circuitry,
MSS during Flash*Freeze mode, and the RTC.
SmartFusion2 devices have up to eight fabric CCC (FAB_CCC) blocks and a dedicated PLL associated
with each CCC to provide flexible clocking to the FPGA fabric portion of the device. The user has the
freedom to use any of the eight PLLs and CCCs to generate the fabric clocks and the internal MSS clock
from the base fabric clock (CLK_BASE). There is also a dedicated CCC block for the MSS (MSS_CCC)
and an associated PLL (MPLL) for MSS clocking and de-skewing the CLK_BASE clock. The fabric
alignment clock controller (FACC), part of the MSS CCC, is responsible for generating various aligned
clocks required by the MSS for correct operation of the MSS blocks and synchornous communication
with the user logic in the FPGA fabric.
High Speed Serial Interfaces
SERDES Interface
SmartFusion2 has up to four 5 Gbps SERDES transceivers, each supporting the following:
•
4 SERDES/PCS lanes
•
The native SERDES interface facilitates implementation of Serial RapidIO (SRIO) in fabric or an
SGMII interface for the Ethernet MAC in MSS
PCI Express (PCIe)
PCIe is a high speed, packet-based, point-to-point, low pin count, serial interconnect bus. The
SmartFusion2 family has two hard high-speed serial interface blocks. Each SERDES block contains a
PCIe (PCI Express) system block. The PCIe system is connected to the SERDES block and following
are the main features supported:
•
Supports x1, x2 and x4 lane configuration
•
Endpoint configuration only
•
PCI Express Base Specification Revision 2.0
•
2.5 and 5.0 Gbps compliant
•
Embedded Receive (2 KB), Transmit (1 KB) and Retry (1 KB) buffer dual-port RAM
implementation
•
256 bytes maximum payload size
•
64-bit AXI or 32-bit/64-bit AHBL Master and Slave interface to the application layer
•
32-bit APB interface to access configuration and status registers of PCIe system
•
Up to 3 x 64 bit base address registers
•
1 virtual channel (VC)
•
Intel’s PIPE interface (8-bit/16-bit) to interface between the PHY MAC and PHY (SERDES)
•
Fully compliant PHY PCS sub-layer (125/250 MHz)
XAUI/XGXS Extension
The XAUI/XGXS extension allows the user to implement a 10 Gbps (XGMII) Ethernet PHY interface by
connecting the Ethernet MAC fabric interface through an appropriate soft IP block in the fabric.
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SmartFusion2 System-on-Chip FPGAs
High Speed Memory Interfaces: DDRx Memory Controllers
There are up to two DDR subsystems, MDDR (MSS DDR) and FDDR (Fabric DDR) present in
SmartFusion2 devices. Each subsystem consists of a DDR controller, PHY and a wrapper. The MDDR
has an interface from the MSS and fabric and FDDR provides an interface from the fabric.
The following are the main features supported by FDDR and MDDR:
•
Support for LPDDR, DDR2, and DDR3 memories
•
Support for SDRAM memories
•
Simplified DDR command interface to standard AMBA AXI/AHB interface
•
Up to 667 Mbps (333 MHz double data rate) performance
•
Supports 1, 2, or 4 ranks of memory
•
Supports different DRAM Bus width modes: x16, x18, x32, and x36
•
Supports DRAM burst length of 2, 4, or 8 in full bus-width mode; supports DRAM burst length of 2,
4, 8, or 16 in half bus-width mode
•
Supports memory densities up to 4 GB
•
Supports a maximum of 8 memory banks
•
SECDED enable/disable feature
•
Embedded physical interface (PHY)
•
Read and Write buffers in fully associative CAMs, configurable in powers of 2, up to 64 Reads
plus 64 Writes
•
Support for dynamically changing clock frequency while in self-refresh.
•
Supports command reordering to optimize memory efficiency
•
Supports data reordering, returning critical word first for each command
MDDR Subsystem
The MDDR subsystem has two interfaces to the DDR. One is an AXI 64-bit bus from the DDR bridge
within the MSS. The other is a multiplexed interface from the FPGA fabric, which can be configured as
either a single AXI 64-bit bus or two 32-bit AHB-Lite buses. There is also a 16-bit APB configuration bus,
which is used to initialize the majority of the internal registers within the MDDR subsystem after reset.
This APB configuration bus can be mastered by the MSS directly or by a master in the FPGA fabric.
FDDR Subsystem
The FDDR subsystem has one interface to the DDR. This is a multiplexed interface from the FPGA
fabric, which can be configured as either a single AXI 64-bit bus or two 32-bit AHB-Lite buses. There is
also a 16-bit APB configuration bus, which is used to initialize the majority of the internal registers within
the FDDR subsystem after reset. This APB configuration bus can be mastered by the MSS directly or by
a master in the FPGA fabric.
Revision 0
1 -9
ADVANCE INFORMATION (Subject to Change)
2 – SmartFusion2 DC and Switching Characteristics
General Specifications
Operating Conditions
Table 2-1 • Recommended Operating Conditions
Symbol
TJ
Parameter
Conditions
Min.
Typ.
Max. Units Notes
Junction temperature
Commercial
0
25
85
°C
Junction temperature
Industrial
–40
25
100
°C
1.14
1.2
1.26
V
VDD
DC core supply voltage
VPP
Power supply for charge pumps (for
normal opeartion and
programming)
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
Analog power supply for PLL0 to
PLL5
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
PLL_PCIE_x_VDDA Auxiliary power supply voltage by
core to macro
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
PLL_MDDR_VDDA Analog
MDDR
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
PLLx_VDDA
PLL_FDDR_VDDA
power
supply
for
PLL
Analog power supply for PLL FDDR
PCIExVDD
PCIe/PCS power supply
1.14
1.2
1.26
V
PCIExVDDIO[L/R]
Tx/Rx analog I/O voltage supply
1.14
1.2
1.26
V
PCIExVDDPLL[L/R] Anlog power supply for SERDES PLL of PCIe
2.375
2.5
2.625
V
VDDIx
1.2 V DC supply voltage
1.14
1.2
1.26
V
1.5 V DC supply voltage
1.425
1.5
1.575
V
1.8 V DC supply voltage
1.71
1.8
1.89
V
2.5 V DC supply voltage
2.375
2.5
2.625
V
3.3 V DC supply voltage
3.15
3.3
3.45
V
LVDS differential I/O
2.375
2.5
3.45
V
B-LVDS, M-LVDS, Mini-LVDS, RSDS differential I/O
2.375
2.5
2.625
V
LVPECL differential I/O
3.15
3.3
3.45
V
VREFx
Reference voltage supply for FDDR (bank 0) and
MDDR (bank 5)
VCCENVM
Embedded
supply
nonvolatile
memory
0.49
0.5
0.51
* VDDI0 * VDDI0 * VDDI0
V
2.5 V range
2.375
2.5
2.625
V
3.3 V range
3.15
3.3
3.45
V
Revision 0
2 -1
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-2 • FPGA and Embedded Flash Programming, Storage and Operating Limits
Product Grade
Commercial
Industrial
Storage
Temperature
Programming
Temperature
Min. TJ = 0°C
Max. TJ = 85°C
Min. TJ = –40°C
Max. TJ = 100°C
Element
Grade Programming
Cycles
Retention
Min. TJ = 0°C
Max. TJ = 85°C
FPGA
500
20 years
Min. TJ = 0°C
Max. TJ = 85°C
Embedded Flash
< 1,000
20 years
< 10,000
10 years
Min. TJ = 0°C
Max. TJ = 85°C
FPGA
500
20 years
Min. TJ = –40°C
Max. TJ = 100°C
Embedded Flash
< 1,000
20 years
< 10,000
10 years
Power Supply Sequencing and Power-On Reset (Commercial and
Industrial)
Sophisticated power-up management circuitry is designed into every SmartFusion2 SoC FPGA. These
circuits ensure easy transition from powered-off state to powered-up state of the device. The
SmartFusion2 system controller is responsible for systematic power-on reset whenever the device is
powered on or reset. All the I/Os are held in a high-impedance state by the system controller until all
power supplies are at their required levels and the system controller has completed the reset sequence.
The power-on reset circuitry in SmartFusion2 devices requires the VDD supply to ramp at a predefined
rate. Four ramp rate options are available during design generation: 50 µs, 100 µs, 1 ms, and 100 ms.
2-2
R e vi s i o n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Thermal Characteristics
Introduction
The temperature variable in the SoC Products Group Designer software refers to the junction
temperature, not the ambient, case, or board temperatures. This is an important distinction because
dynamic and static power consumption will cause the chip's junction temperature to be higher than the
ambient, case, or board temperatures. EQ 1 through EQ 3 give the relationship between thermal
resistance, temperature gradient, and power.
T J – θA
θ JA = -----------------P
EQ 1
TJ – TB
θ JB = ------------------P
EQ 2
θ JC
TJ – TC
= ------------------P
EQ 3
where
θJA = Junction-to-air thermal resistance
θJB = Junction-to-board thermal resistance
θJC = Junction-to-case thermal resistance
TJ
= Junction temperature
TA
= Ambient temperature
TB
= Board temperature (measured 1.0 mm away from the
package edge)
TC
= Case temperature
P
= Total power dissipated by the device
Table 2-3 • Package Thermal Resistance
θJA
Product
M2S050T-FG896
Still Air
1.0 m/s
2.5 m/s
θJC
θJB
Units
14.7
12.5
10.9
7.2
4.9
°C/W
Revision 0
2 -3
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Theta-JA
Junction-to-ambient thermal resistance (θJA) is determined under standard conditions specified by
JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with
caution but is useful for comparing the thermal performance of one package to another.
The maximum power dissipation allowed is calculated using EQ 4.
T J(MAX) – T A(MAX)
Maximum Power Allowed = --------------------------------------------θ JA
EQ 4
The absolute maximum junction temperature is 100°C. EQ 5 shows a sample calculation of the absolute
maximum power dissipation allowed for the M2S050T-FG896 package at commercial temperature and in
still air, where
θJA
= 14.7°C/W (taken from Table 2-3 on page 2-3).
TA
= 85°C
100°C – 85°C
Maximum Power Allowed = ------------------------------------ = 1.088 W
14.7°C/W
EQ 5
The power consumption of a device can be calculated using the Microsemi SoC Products Group power
calculator. The device's power consumption must be lower than the calculated maximum power
dissipation by the package. If the power consumption is higher than the device's maximum allowable
power dissipation, a heat sink can be attached on top of the case, or the airflow inside the system must
be increased.
Theta-JB
Junction-to-board thermal resistance (θJB) measures the ability of the package to dissipate heat from the
surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance
from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a
means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a
JEDEC standard board with a minimum distance of 5.0 mm away from the package edge.
Theta-JC
Junction-to-case thermal resistance (θJC) measures the ability of a device to dissipate heat from the
surface of the chip to the top or bottom surface of the package. It is applicable for packages used with
external heat sinks. Constant temperature is applied to the surface in consideration and acts as a
boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through
the surface in consideration.
2-4
R e vi s i o n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Calculating Power Dissipation
Quiescent Supply Current
Table 2-4 • Quiescent Supply Current Characteristics
M2S050T
Parameter
Modes
VDD = 1.2 V
Units
IDC1
Active mode
7.5
mA
IDC2
Standby mode
7.5
mA
IDC3
Flash*Freeze mode
0.387
mA
I/O Power
Table 2-5 • Summary of I/O Input Buffer Power (per pin)
Using Default Software Setting with Technology Selected
MSIO I/O Bank
MSIOD I/O Bank
DDR I/O Bank
Static
Power
Dynamic
Power
Static
Power
Dynamic
Power
Static
Power
Dynamic
Power
PDC8
(mW)
PAC9
(µW/MHz)
PDC8
(mW)
PAC9
(µW/MHz)
PDC8
(mW)
PAC9
(µW/MHz)
1.2 V LVCMOS (JESD8-11)
0.00
11.72
0.00
11.72
0.00
11.72
1.5 V LVCMOS (JESD8-11)
0.00
8.32
0.00
8.32
0.00
8.32
1.8 V LVCMOS
0.00
10.69
0.00
10.69
0.00
10.69
2.5 V LVCMOS
0.00
4.14
0.00
4.14
0.00
4.14
3.3 V LVTTL / 3.3 V LVCMOS
0.00
5.47
–
–
–
–
3.3 V PCI/PCIX
0.00
1.82
–
–
–
–
Notes
Single Ended I/O Standards
Memory Interface and Voltage Reference Standard
HSTL 1.5 V
2.21
5.57
2.21
5.57
2.21
5.57
HSTL 1.5 V – True differential
1.25
47.38
1.25
47.38
1.25
47.38
SSTL2/DDR
10.02
42.68
10.02
42.68
10.02
42.68
SSTL2/DDR – True differential
4.39
12.35
4.39
12.35
4.39
12.35
SSTL18/DDR2
3.88
3.81
3.88
3.81
3.88
3.81
SSTL18/DDR2 – True differential
1.97
56.80
1.97
56.80
1.97
56.80
SSTL15/DDR3
–
–
–
–
2.20
18.00
SSTL15/DDR3 – True differential
–
–
–
–
1.23
46.81
LPDDR
–
–
–
–
3.88
4.46
LPDDR – True differential
–
–
–
–
1.97
5.08
LVDS
5.74
17.65
5.74
17.65
–
–
B-LVDS
5.65
8.76
5.65
8.76
–
–
M-LVDS
5.65
8.76
5.65
8.76
–
–
Differential Standards
RSDS
5.74
0.93
5.74
0.93
–
–
Mini-LVDS
TBD
TBD
TBD
TBD
–
–
LVPECL
TBD
TBD
–
–
–
–
Revision 0
2 -5
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-6 • Summary of I/O Output Buffer Power (per pin)
Default Software Setting with Technology selected
MSIO I/O Bank
MSIOD I/O Bank
DDR I/O Bank
Static
Power
Dynamic Static
Power
Power
Dynamic Static Dynamic
Power Power Power
PDC9
(mW)
PAC9
PDC9
(µW/MHz) (mW)
PAC9
PDC9
PAC9
(µW/MHz) (mW) (µW/MHz) Notes
Single Ended I/O Standards
1.2 V LVCMOS (JESD8-11)
0.00
16.74
0.00
16.74
0.00
16.74
1.5 V LVCMOS (JESD8-11)
0.00
26.31
0.00
26.31
0.00
26.31
1.8 V LVCMOS
0.00
38.23
0.00
38.23
0.00
38.23
2.5 V LVCMOS
0.00
75.35
0.00
75.35
0.00
75.35
3.3 V LVTTL / 3.3 V LVCMOS
0.00
137.04
–
–
–
–
3.3 V PCI/PCIX
0.00
TBD
–
–
–
–
Memory Interface and Voltage Reference Standard
HSTL 1.5 V Class I
6.45
60.17
6.45
60.17
6.45
60.17
HSTL 1.5 V Class I – True differential
12.90
80.30
12.90
80.30
12.90
80.30
–
–
–
–
12.56
104.21
HSTL 1.5 V Class II
HSTL 1.5 V Class II – True differential
–
–
–
–
25.08
87.09
SSTL2 Class I / DDR Reduced Drive
18.12
76.44
18.12
76.44
18.12
76.44
SSTL2 Class I / DDR Reduced Drive
– True differential
36.16
218.81
36.16
218.81
36.16
218.81
SSTL2 Class II / DDR Full Drive
37.20
317.68
37.20
317.68
37.20
317.68
SSTL2 Class II / DDR Full Drive
– True differential
74.41
110.90
74.41
110.90
74.41
110.90
SSTL18 Class I / DDR2 Reduced Drive
9.06
15.09
9.06
15.09
9.06
15.09
SSTL18 Class I / DDR2 Reduced Drive
– True differential
18.09
56.33
18.09
56.33
18.09
56.33
SSTL18 Class II / DDR2 Full Drive
18.63
170.66
18.63
170.66
18.63
170.66
SSTL18 Class II / DDR2 Full Drive
– True differential
37.28
9.12
37.28
9.12
37.28
9.12
SSTL15 Class I / DDR3 Reduced Drive
–
–
–
–
11.28
62.13
SSTL15 Class I / DDR3 Reduced Drive
– True differential
–
–
–
–
22.52
131.80
SSTL15 Class II / DDR3 Full Drive
–
–
–
–
12.15
47.65
SSTL15 Class II / DDR3 Full Drive
– True differential
–
–
–
–
24.29
142.98
LPDDR Reduced Drive
–
–
–
–
18.62
331.33
LPDDR Reduced Drive – True differential
–
–
–
–
37.28
9.12
LPDDR Full Drive
–
–
–
–
9.06
46.40
LPDDR Full Drive – True differential
–
–
–
–
18.09
56.33
Differential Standards
LVDS
13.48
63.84
13.48
63.84
–
–
B-LVDS
18.37
30.73
–
–
–
–
M-LVDS
18.37
30.73
–
–
–
–
RSDS
8.50
82.76
8.50
82.76
–
–
Mini-LVDS
TBD
TBD
TBD
TBD
–
–
2-6
R e vi s i o n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Power Consumption of Various Internal Resources
Table 2-7 • Different Components Contributing to Dynamic Power Consumption
in SmartFusion2 Devices
Power Supply
Param.
Definition
Device
Name
Domain
M2S050T
Units
Notes
PAC1
Global Clock contribution of a GB
VDD
1.2 V
3.50
µW/MHz
PAC2
Global Clock contribution of a RGB
VDD
1.2 V
0.87
µW/MHz
PAC3
Global Clock contribution of a sequential module.
VDD
1.2 V
0.02
µW/MHz
PAC4
Clock contribution of a sequential module.
VDD
1.2 V
0.01
µW/MHz
PAC5
Data contribution of a sequential module.
VDD
1.2 V
0.06965
µW/MHz
PAC6
Average contribution of a combinatorial module.
VDD
1.2 V
0.709
µW/MHz
PAC7
Average contribution of a combinatorial module with
carry chain.
VDD
1.2 V
0.821657
µW/MHz
PAC8
Average contribution of a routing net.
VDD
1.2 V
0.87
µW/MHz
PAC9
Contribution of an I/O input pin (standard dependent)
VDDI
Table 2-5
Table 2-5
on page 2-5 on page 2-5
–
PAC10 Contribution of an I/O output pin (standard dependent)
VDDI
Table 2-6
Table 2-6
on page 2-6 on page 2-6
–
PAC11 Average contribution of a uSRAM block during a read
operation.
VDD
1.2 V
2.39
µW/MHz
PAC12 Average contribution of a uSRAM block during a write
operation.
VDD
1.2 V
7.01
µW/MHz
PAC13 Average contribution of a LSRAM block during a read
operation.
VDD
1.2 V
19.85
µW/MHz
PAC14 Average contribution of a LSRAM block during a write
operation.
VDD
1.2 V
24.85
µW/MHz
PAC15 CCC contribution
VDD
1.2 V
8.00
mW
PAC16 Main Crystal Oscillator contribution
VDD
1.2 V
55.51
µW/MHz
PAC17 1 MHz RC Oscillator contribution
VDD
1.2 V
37.2
mW
PAC18 50 MHz RC Oscillator contribution
VDD
1.2 V
7.30
mW
PAC19 Math Block contribution
VDD
1.2 V
TBD
mW
PAC20 MSS Dynamic Power Contribution with
MDDR/USB/Ethernet OFF,
Clock Frequency = 100 MHz
VDD
1.2 V
91.986
mW
1
PAC21 MSS Dynamic Power Contribution with USB/Ethernet
OFF, Clock Frequency = 100 MHz,
MDDR mode–MSS Bridge
VDD
1.2 V
137.43
mW
1
Notes:
1. For a different use of MSS peripherals and resources, refer to SmartPower.
2. Dynamic power contribution of FDDR does not include the DDRIO power. Use I/O power for calculation of I/O power. For
a different use of the FDDR, refer to SmartPower.
3. For a different use of the SERDES block, refer to SmartPower.
Revision 0
2 -7
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-7 • Different Components Contributing to Dynamic Power Consumption
in SmartFusion2 Devices (continued)
Power Supply
Param.
Definition
Device
Name
Domain
M2S050T
Units
Notes
PAC22 FDDR Dynamic Power Contribution
with frequency = 100 MHz, DDR Clock Multiplier = 2
VDD
1.2 V
108.81
mW
2
PAC23 SERDES Dynamic Power Contribution configured as
PCIe_GEN1 with 1 Lane at 125 MHz
VDD
1.2 V
91.70
mW
3
Notes:
1. For a different use of MSS peripherals and resources, refer to SmartPower.
2. Dynamic power contribution of FDDR does not include the DDRIO power. Use I/O power for calculation of I/O power. For
a different use of the FDDR, refer to SmartPower.
3. For a different use of the SERDES block, refer to SmartPower.
Table 2-8 • Different Components Contributing to the Static Power Consumption in SmartFusion Devices
Power Supply
Param.
Definition
Name Domain
Device
Mode
M2S050T
Units
PDC1
Core static power contribution in Active Operating
mode
VDD
1.2 V
Active
9.000
mW
PDC2
Core static power
Operating mode
Standby
VDD
1.2 V
Standby
9.000
mW
PDC3
Core static power contribution in Flash*Freeze
Operating mode
VDD
1.2 V
Flash*Freeze
0.465
mW
PDC4
LSRAM static power contribution in Flash*Freeze
configured in "Sleep" State
VDD
1.2 V
Flash*Freeze
1.250
uW
PDC5
LSRAM static power contribution in Flash*Freeze
configured in "Suspended" State
VDD
1.2 V
Flash*Freeze
10.140
uW
PDC6
USRAM static power contribution in Flash*Freeze
configured in "Sleep" State
VDD
1.2 V
Flash*Freeze
0.500
uW
PDC7
USRAM static power contribution in Flash*Freeze
configured in "Suspend" State
VDD
1.2 V
Flash*Freeze
4.970
uW
PDC8
I/O Input static power contribution in
Operating mode
Active VDDI
VDDI
Active
See Table 2-5
on page 2-5
uW
PDC9
I/O Output static power contribution in
Operating mode
Active
VDDI
Active
See Table 2-6
on page 2-6
uW
2-8
contribution
in
VDDI
R e vi s i o n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Power Methodology
This section describes a simplified method to estimate power consumption of an application. For more
accurate and detailed power estimations, use the SmartPower tool in the Libero IDE software. The power
calculation methodology described below uses the following variables:
•
The number of PLLs/CCCs as well as the number and the frequency of each output clock
generated
•
The number of combinatorial and sequential cells used in the design
•
The internal clock frequencies
•
The number and the standard of I/O pins used in the design
•
The number of RAM blocks used in the design
•
Toggle rates of I/O pins as well as the logic module—guidelines are provided in Table 2-9 on
page 2-13.
•
Enable rates of output buffers—guidelines are provided for typical applications in Table 2-10 on
page 2-13.
•
Read rate and write rate to the memory—guidelines are provided for typical applications in
Table 2-10 on page 2-13.
The calculation should be repeated for each clock domain defined in the design.
Methodology
Total Power Consumption—PTOTAL
Active, Standby and Flash*Freeze Mode
PTOTAL = PSTAT + PDYN
PSTAT is the total static power consumption.
PDYN is the total dynamic power consumption.
Total Static Power Consumption—PSTAT
Active Mode
PSTAT = PDC1 + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) + (NPLLS * PDC9)
NINPUTS is the number of I/O input buffers used in the design.
NOUTPUTS is the number of I/O output buffers used in the design.
NPLLS is the number of PLLs available in the device.
Standby Mode
PSTAT = PDC2
Flash*Freeze Mode
PSTAT = PDC3 + PDC4 + PDC 6 when both LSRAM and uSRAM are configured in Sleep state
PSTAT = PDC3 + PDC5 + PDC 7 when both LSRAM and uSRAM are configured in Suspend state
Total Dynamic Power Consumption—PDYN
Active Mode
PDYN = PCLOCK + PLOGIC + PIOS + PMEMORY + PCCC + PMATH + PMSS + PFDDR + PSERDES
Flash*Freeze Mode
PDYN = PDC3 + PMEMORY
Standby Mode
PDYN = PDC2
Revision 0
2 -9
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Global Clock Dynamic Power Contribution—PCLOCK
Active Mode
PCLOCK = (PAC1 + NROWS * PAC2 + NS-CELL * PAC3) * FCLK
Where:
NROWS is the number of global rows used in the design—guidelines are provided in the "Fabric
Global Routing Resources" chapter of the SmartFusion2 FPGA Fabric Architecture User's Guide.
FCLK is the global clock signal frequency.
NS-CELL is the number of Registers used in the design.
Standby and Flash*Freeze Mode
PCLOCK = 0 W
Logic Module Dynamic Power Contribution—PLOGIC
Active Mode
PLOGIC = PSEQ + PLUT + PNET
Standby and Flash*Freeze Mode
PLOGIC = 0 W
Registers Dynamic Power Contribution—PSEQ
PSEQ = NS-CELL * PAC4 * FCLK + NS-CELL * PAC5 * FCLK * α1/2
Where:
NS-CELL is the number of registers used in the design.
α1 is the toggle rate of the LUT outputs—guidelines are provided in Table 2-9 on page 2-13.
FCLK is the global clock signal frequency.
LUTs Dynamic Power Contribution—PLUT
PLUT= (NLUT * PAC6 + NCC * PAC7) * FCLK * α1/2
Where:
NLUT is the number of LUT-4 used as combinatorial modules in the design.
NCC is the number of LUT-4 used with the carry chain in the design.
α1 is the toggle rate of the LUT outputs—guidelines are provided in Table 2-9 on page 2-13.
FCLK is the global clock signal frequency.
Routing Net Dynamic Power Contribution—PNET
PNET = (NS-CELL + NLUT + NCC) * (α1 / 2) * PAC8 * FCLK
Where:
NS-CELL is the number of registers used in the design.
NLUT is the number of LUT-4 used as combinatorial modules in the design.
NCC is the number of LUT-4 used with the carry chain in the design.
α1 is the toggle rate of the LUT outputs—guidelines are provided in Table 2-9 on page 2-13.
FCLK is the global clock signal frequency.
I/O Dynamic Contribution—PIOS
Active Mode
PIOS = PINPUTS + POUTPUTS
Standby and Flash*Freeze Mode
PIOS = 0 W
2- 10
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
I/O Input Buffer Dynamic Contribution—PINPUTS
PINPUTS = NINPUTS * (α2 / 2) * β1 * PAC9 * FCLK
Where:
NINPUTS is the number of I/O input buffers used in the design.
α2 is the I/O buffer toggle rate—guidelines are provided in Table 2-9 on page 2-13.
β1 is the I/O buffer enable rate—guidelines are provided in Table 2-10 on page 2-13.
FCLK is the global clock signal frequency.
I/O Output Buffer Dynamic Contribution—POUTPUTS
POUTPUTS = NOUTPUTS * (α2 / 2) * β1 * PAC10 * FCLK
Where:
NOUTPUTS is the number of I/O output buffers used in the design.
α2 is the I/O buffer toggle rate—guidelines are provided in Table 2-9 on page 2-13.
β1 is the I/O buffer enable rate—guidelines are provided in Table 2-10 on page 2-13.
FCLK is the global clock signal frequency.
FPGA Fabric SRAM Dynamic Contribution—PMEMORY
Active Mode
PMEMORY = PUSRAM + PLSRAM
Flash*Freeze Mode
PMEMORY = PDC4 + PDC6 for RAM in "Sleep" State
PMEMORY = PDC5 + PDC7 for RAM in "Suspend" State
Standby Mode
PMEMORY = 0 W
FPGA Fabric uSRAM Dynamic Contribution—PUSRAM
PuSRAM = (NuSRAM_BLK * PAC13 *β2 * FuSRAM-RDCLK) + (NuSRAM_BLK * PAC14 * β3
* FuSRAM-WRTCLK)
Where:
NuSRAM_BLK is the number of uRAM blocks used in the design.
FuSRAM-RDCLK is the uSRAM memory read clock frequency.
FuSRAM-WRTCLK is the uSRAM memory write clock frequency.
β2 is the RAM enable rate for read operations—guidelines are provided in Table 2-10 on
page 2-13.
β3 the RAM enable rate for write operations—guidelines are provided in Table 2-10 on page 2-13.
FPGA Fabric Large SRAM Dynamic Contribution—PLSRAM
PLSRAM = (NLSRAM_BLK * PAC13 * β2 * FLSRAM-RDCLK) + (NLSRAM_BLK * PAC14 * β3
* FLSRAM-WRTCLK)
Where:
NLSRAM_BLK is the number of Large SRAM blocks used in the design.
FLSRAM-RDCLK is the Large SRAM memory read clock frequency.
FLSRAM-WRTCLK is the Large SRAM memory write clock frequency.
β2 is the RAM enable rate for read operations—guidelines are provided in Table 2-10 on
page 2-13.
β3 the RAM enable rate for write operations—guidelines are provided in Table 2-10 on page 2-13.
Revision 0
2- 11
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
PLL/CCC Dynamic Contribution—PPLL
Active Mode
PPLL = PAC15
Flash*Freeze/Standby Mode
PPLL = 0 W
External Main Crystal Oscillator Dynamic Contribution—PXTL-OSC
Active Mode
PXTL-OSC = PAC16 * FCLK
Where:
FCLK is the output frequency of the oscillator.
Flash*Freeze/Standby Mode
PXTL-OSC = 0 W
On-Chip 25/50MHz RC Oscillator Dynamic Contribution—P50RC-OSC
Active Mode/Standby Mode
P50RC-OSC = 0 W
Flash*Freeze
When used by MSS:
P50RC-OSC = PAC18
When not used by MSS:
P50RC-OSC = 0 W
Math Block Dynamic Power Contribution—PMATH
Active Mode
PMATH = PAC19 * NMATH_BLK * FMATHCLK
NMATH_BLK is the number of math blocks used in the design.
FMATHCLK is the math block clock frequency.
Flash*Freeze/Standby Mode
PMATH = 0 W
Microcontroller Subsystem Dynamic Power Contribution—PMSS
Active Mode
With MDDR OFF:
PMSS = PAC20
With MDDR ON:
PMSS = PAC21
Flash*Freeze/Standby Mode
PMSS = 0 W
2- 12
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ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
FDDR Dynamic Power Contribution—PFDDR
Active Mode
PFDDR = PAC22
FDDR Dynamic power contributions do not include the power contributions of the DDR I/O. This should
be accounted for in the I/O power calculations.
Flash*Freeze/Standby Mode
PFDDR = 0 W
SERDES Contribution—PSERDES
Active Mode
PSERDES = PAC23
Flash*Freeze/Standby Mode
PSERDES = 0 W
Guidelines
Toggle Rate Definition
A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the
toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some
examples:
•
The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock
frequency.
•
The average toggle rate of an 8-bit counter is 25%:
–
Bit 0 (LSB) = 100%
–
Bit 1 = 50%
–
Bit 2 = 25%
–
…
–
Bit 7 (MSB) = 0.78125%
–
Average toggle rate = (100% + 50% + 25% + 12.5% + . . . 0.78125%) / 8.
Enable Rate Definition
Output enable rate is the average percentage of time during which tristate outputs are enabled. When
non-tristate output buffers are used, the enable rate should be 100%.
Table 2-9 • Toggle Rate Guidelines Recommended for Power Calculation
Component
Definition
Guideline
α1
Toggle rate of Logic Module outputs
10%
α2
I/O buffer toggle rate
10%
Table 2-10 • Enable Rate Guidelines Recommended for Power Calculation
Component
Definition
Guideline
β1
I/O output buffer enable rate
β2
FPGA fabric SRAM enable rate for read operations
12.50%
β3
FPGA fabric SRAM enable rate for write operations
12.50%
β4
eNVM enable rate for read operations
Toggle rate of the logic driving the output buffer
< 5%
Revision 0
2- 13
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Average Fabric Temperature and Voltage Derating Factors
Table 2-11 • Average Temperature and Voltage Derating Factors for Fabric Timing Delays
(normalized to TJ = 100°C, worst-case VDD = 1.14 V)
Array Voltage
VCC (V)
Junction Temperature (°C)
–40°C
0°C
25°C
70°C
85°C
100°C
1.14
TBD
TBD
TBD
TBD
TBD
TBD
1.2
TBD
TBD
TBD
TBD
TBD
TBD
1.26
TBD
TBD
TBD
TBD
TBD
TBD
2- 14
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Timing Model
I/O Module
G (Non-Registered)
E Combinational Cell
F Combinational Cell
Y
Buffer
Y
Combinational Cell
H
I/O Module
(Non-Registered)
I
Buffer
Y
LVCMOS 2.5 V
Output Drive Strength = 7X
MSIO I/O Bank
I/O Module
(Non-Registered)
Combinational Cell
I/O Module
(Registered)
Buffer
J
Y
K
LVCMOS 2.5 V
Output Drive Strength = 4X
MSIO I/O Bank
A
DDR3
B
D
Q
Combinational Cell
M
Input
Clock
LVDS
Y
I/O Module
(Non-Registered)
P
LVCMOS 1.5 V
Output Drive Strength = 12X
DDRIO I/O Bank
C
Register Cell
LVCMOS 2.5 V
D
L
D
Q
Combinational Cell
M
Y
Register Cell
L
D
I/O Module
(Registered)
Buffer
O
N
Q
D
I/O Module
(Non-Registered)
Q
SSTL2
Class I
LVDS
Input
Clock
C
Input
Clock
LVCMOS 2.5 V
Figure 2-1 •
C
LVCMOS 2.5 V
Timing Model
Revision 0
2- 15
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-12 • Timing Model Parameters
Index Parameter
Description
Value
Units
Notes
A
tPY
Propagation Delay of DDR3 Receiver
TBD
ns
Table 2-51 on page 2-51
B
tICLKQ
Clock-to-Q of the Input Data Register
TBD
ns
Table 2-73 on page 2-65
tISUD
Setup Time of the Input Data Register
TBD
ns
Table 2-73 on page 2-65
tRCKH
Input High Delay for Global Clock
TBD
ns
Table 2-79 on page 2-76
tRCKL
Input Low Delay for Global Clock
TBD
ns
Table 2-79 on page 2-76
C
D
tPY
Input Propagation Delay of LVDS Receiver
TBD
ns
Table 2-57 on page 2-55
E
tDP
Propagation Delay of a three input AND Gate
0.22
ns
Table 2-77 on page 2-73
F
tDP
Propagation Delay of a OR Gate
0.172
ns
Table 2-77 on page 2-73
G
tDP
Propagation Delay of a LVDS Transmitter
TBD
ns
Table 2-58 on page 2-55
H
tDP
Propagation Delay of a three input XOR Gate
0.24
ns
Table 2-77 on page 2-73
I
tDP
Propagation Delay of LVCMOS 2.5 V Transmitter,
Drive strength of 8X on the MSIO Bank
2.481
ns
Table 2-25 on page 2-25
J
tDP
Propagation Delay of a two input MUX gate
0.172
ns
Table 2-77 on page 2-73
K
tDP
Propagation Delay of LVCMOS 2.5 V Transmitter,
Drive strength of 4X on the MSIO Bank
2.382
ns
Table 2-25 on page 2-25
L
tCLKQ
Clock-to-Q of the Data Register
0.114
ns
Table 2-78 on page 2-75
tSUD
Setup Time of the Data Register
0.267
ns
Table 2-78 on page 2-75
Propagation Delay of a two input AND gate
0.172
ns
Table 2-77 on page 2-73
TBD
ns
Table 2-73 on page 2-65
Setup Time of the Output Data Register
TBD
ns
Table 2-73 on page 2-65
M
N
tDP
tOCLKQ Clock-to-Q of the Output Data Register
tOSUD
O
tDP
Propagation Delay of SSTL2, Class I Transmitter on
the MSIO Bank
TBD
ns
Table 2-46 on page 2-44
P
tDP
Propagation Delay of LVCMOS 1.5 V Transmitter,
Drive strength of 15X on the DDRIO Bank
TBD
ns
Table 2-33 on page 2-31
2- 16
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ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
User I/O Characteristics
There are three types of I/Os supported in the SmartFusion2 FPGA Family: MSIO, MSIOD, and DDRIO
I/O banks. The I/O standards supported by the different I/O banks is described in the "I/Os" section of the
SmartFusion2 FPGA Fabric Architecture User’s Guide.
Input Buffer and AC Loading
tPY
tPYS
PAD
Y
tPY = MAX(tPY(R), tPY(F))
tDIN = MAX(tDIN(R), tDIN(F))
VIH
PAD
Vtrip
Vtrip
VIL
VDD
50%
50%
Y
GND
tPYS
tPYS
(R)
(F)
tPY
(R)
tPY
(F)
Revision 0
2- 17
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Output Buffer and AC Loading
Single-Ended I/O Test Setup
HSTL/PCI Test Setup
tDP
tDP
PAD
D
VTT/VDDI
PAD
D
Rtt
Cload
Cload
tDP = MAX(tDP(R), tDP(F))
tDP = MAX(tDP(R), tDP(F))
Voltage-Referenced, Singled-Ended I/O Test Setup
tDP
PAD
D
Rs
Rtt
Cload
tDP = MAX(tDP(R), tDP(F))
Differential I/O Test Setup
tDP
D
PAD_P
tPY
Z0 = 50 Ohms
PAD_P
IN
D
PAD_N
Z0 = 50 Ohms
PAD_N
tPY = MAX(tPY(R), tPY(F))
tDP = MAX(tDP(R), tDP(F))
tPYS = MAX(tPYS(R), tPYS(F))
VDD
D
50%
50%
0V
VOH
Vtrip
Vtrip
VOL
OUT
tDP
(R)
2- 18
tDP
(F)
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ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Tristate Buffer and AC Loading
The tristate path for enable path loadings is described in the respective specifications. The methodology
of characterization is illustrated by the enable path test point below.
tZL, tZH, tHZ, tLZ
E
PAD
OUT
D
Rent to GND for tZH, tHZ
Data
(D)
Enable
(E)
50%
tZL
PAD
50%
50%
tHZ
tZH
50%
tLZ
90% VDDI
90% VDDI
10% VDDI
Revision 0
10% VDDI
2- 19
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Detailed I/O Characteristics
Table 2-13 • Input Capacitance
Symbol
CIN
Definition
Input capacitance
Conditions
Minimum
Maximum
Units
–
10
pF
VIN = 0, f = 1.0 MHz
Table 2-14 • I/O Weak Pull-Up/Pull-Down Resistances for DDRIO I/O Bank
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values at VOH/VOL
Level
DDRIO I/O Bank
VDDI
Domain
R(WEAK PULL-UP) at VOH (Ω) R(WEAK PULL-DOWN) at VOL (Ω)
Min.
Max.
Min.
Max.
Notes
3.3 V
N/A
N/A
N/A
N/A
–
2.5 V
10.6 K
17.3 K
10.5 K
18.1 K
1, 2
1.8 V
1.11 K
19.3 K
11.2 K
20.9 K
1, 2
1.5 V
10 K
13.4 K
9.99 K
13.4 K
1, 2
1.2 V
10.3 K
14.5 K
10.3 K
14.7 K
1, 2
Notes:
1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX)
2. R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN)
Table 2-15 • I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values at VOH/VOL
Level
MSIO IO Bank
VDDI
Domain
R(WEAK PULL-UP) at VOH (Ω)
R(WEAK PULL-DOWN) at VOL (Ω)
Min.
Max.
Min.
Max.
Notes
3.3 V
9.9 K
14.7 K
10.1 K
15.3 K
–
2.5 V
10.1 K
15.1 K
10.1 K
15.7 K
1, 2
1.8 V
10.4 K
16.2 K
10.4 K
17.3 K
1, 2
1.5 V
10.7 K
17.3 K
10.8 K
18.9 K
1, 2
1.2 V
11.3 K
19.7 K
11.5 K
22.7 K
1, 2
Notes:
1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX)
2. R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN)
2- 20
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ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-16 • I/O Weak Pull-Up/Pull-Down Resistances for MSIOD I/O Bank
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values at VOH/VOL
Level
VDDI
Domain
R(WEAK PULL-UP) at VOH (Ω) R(WEAK PULL-DOWN) at VOL (Ω)
Min.
Max.
Min.
Max.
Notes
3.3 V
N/A
N/A
N/A
N/A
–
2.5 V
9.6 K
14.1 K
9.5 K
13.9 K
1, 2
1.8 V
9.7 K
14.7 K
9.7 K
14.5 K
1, 2
1.5 V
9.9 K
15.3 K
9.8 K
15 K
1, 2
1.2 V
10.3 K
16.7 K
10 K
16.2 K
1, 2
Notes:
1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX)
2. R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN)
Table 2-17 • Schmitt Trigger Input Hysteresis
Hysteresis Voltage Value for Schmitt Trigger Mode Input Buffers
Input Buffer Configuration
Hysteresis Value (typical, unless otherwise noted)
3.3 V LVTTL / LVCMOS / PCI / PCI-X
0.05 × VDDI (worst-case)
2.5 V LVCMOS
0.05 × VDDI (worst-case)
1.8 V LVCMOS
0.1 × VDDI (worst-case)
1.5 V LVCMOS
60 mV
1.2 V LVCMOS
20 mV
Revision 0
2- 21
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Single-Ended I/O Standards
Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS)
LVCMOS is a widely used switching standard implemented in CMOS transistors. This standard is defined
by JEDEC (JESD 8-5). The LVCMOS standards supported in SmartFusion2 SoC FPGAs are
LVCMOS12, LVCMOS15, LVCMOS18, and LVCMOS25 and LVCMOS33.
3.3 V LVCMOS/LVTTL
LVCMOS 3.3 V or Low-Voltage Transistor-Transistor Logic (LVTTL) is a general standard for 3.3 V
applications.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-18 • LVTTL/LVCMOS 3.3 V DC Voltage Specification
Symbol
Parameters
Conditions
Min.
Typ.
Max.
Units
3.15
3.3
3.45
V
VIH (DC) DC input logic High
2.0
–
3.45
V
VIL (DC)
DC input logic Low
–0.3
–
0.8
V
IIH (DC)
Input current High
–
–
10
mA
IIL (DC)
Input current Low
–
–
10
mA
Notes
Recommended DC Operating Conditions
VDDI
Supply voltage
LVTTL/LVCMOS 3.3 V DC Input Voltage Specification
LVCMOS 3.3 V DC Output Voltage Specification
VOH
DC output logic High
VDDI – 0.4
–
–
V
1
VOL
DC output logic Low
–
–
0.4
V
1
LVTTL 3.3 V DC Output Voltage Specification
VOH
DC output logic High
0.4
–
–
V
VOL
DC output logic Low
–
–
2.4
V
–
–
600
Mbps
LVTTL/LVCMOS 3.3 V AC Specifications
Fmax
Maximum data rate
(for MSIO I/O bank)
AC loading: 10 pF / 500 Ohm Load,
maximum drive/slew
LVTTL/LVCMOS 3.3 V AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
1.4
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Notes:
1. The VOH/VOL test points selected ensure compliance with LVCMOS 3.3 V JESD8-B requirements.
2- 22
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ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-19 • LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications
Output Drive Selection
MSIO I/O Bank
VOH (V)
VOL (V)
IOH (at VOH) mA
IOL (at VOL) mA
1
VDDI – 0.4
0.4
2
2
2
VDDI – 0.4
0.4
4
4
3
VDDI – 0.4
0.4
8
8
4
VDDI – 0.4
0.4
12
12
6
VDDI – 0.4
0.4
16
16
8
VDDI – 0.4
0.4
20
20
Notes
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 3.0 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-20 • LVCMOS 3.3 V Receiver Characteristics
TDIN
TSCH_DIN
On Die Termination
(ODT)
–1
Std.
–1
Std.
Units
None
2.46
2.893
2.408
2.833
ns
LVCMOS 3.3 V (For MSIO I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-21 • LVCMOS 3.3 V Transmitter Characteristics
Output
Drive
Selection
TDOUT
Slew
Control
–1
Std.
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
LVCMOS 3.3 V (for MSIO I/O bank)
1
–
3.274
3.853
3.459
4.069
3.269
3.845
3.608
4.244
3.419
4.022
ns
2
–
2.418
2.845
2.914
3.427
4.35
5.116
3.064
3.604
4.5
5.293
ns
3
–
2.221
2.614
4.195
4.935
4.695
5.523
4.345
5.112
4.845
5.7
ns
4
–
2.128
2.505
5.135
6.041
5.105
6.005
5.285
6.218
5.255
6.182
ns
6
–
2.147
2.526
5.776
6.795
5.451
6.412
5.926
6.972
5.601
6.589
ns
8
–
2.228
2.622
5.958
7.009
5.691
6.695
6.108
7.186
5.841
6.872
ns
Revision 0
2- 23
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
LVCMOS 2.5 V
LVCMOS 2.5 V is a general standard for 2.5 V applications and is supported in SmartFusion2 FPGAs in
compliance to the JEDEC specification JESD8-5A.
Minimum and Maximum DC Input and Output Levels Specification
Table 2-22 • LVCMOS 2.5 V DC Voltage Specification
Symbol
Parameters
Conditions
Min.
Typ.
Max.
Units
2.375
2.5
2.625
V
Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVCMOS 2.5 V DC Input Voltage Specification
VIH (DC)
DC input logic High for (MSIOD and DDRIO I/O bank)
1.7
–
2.625
V
VIH (DC)
DC input logic High (for MSIO I/O bank)
1.7
–
3.45
V
VIL (DC)
DC input logic Low
–0.3
–
0.7
V
IIH (DC)
Input current High
–
–
–
mA
IIL (DC)
Input current Low
–
–
–
mA
LVCMOS 2.5 V DC Output Voltage Specification
VOH
DC output logic High
VDDI – 0.4
–
–
V
1
VOL
DC output logic Low
–
–
0.4
V
1
LVCMOS 2.5 V AC Specifications
Fmax
Maximum data rate (for AC loading: 5 pF load,
DDRIO I/O bank)
maximum drive/slew
–
–
250
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIO I/O bank)
load, maximum drive/slew
–
–
410
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIOD I/O bank)
load, maximum drive/slew
–
–
420
Mbps
Supported output driver
calibrated impedance (for
DDRIO I/O bank)
75, 60,
50, 33,
25, 20
Ohms
LVCMOS 2.5 V AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
1.2
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
2K
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
5
pF
Cload
Capacitive loading for data path (tDP)
5
pF
Notes:
1. The VOH/VOL test points selected ensure compliance with LVCMOS 2.5 V JEDEC8-5A requirements.
2- 24
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-23 • LVCMOS 2.5 V Transmitter Drive Strength Specifications
Output Drive Selection
VOH (V)
VOL (V)
Min.
Max.
MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank
IOH (at VOH) IOL (at VOL)
mA
mA
Notes
1
2
2
VDDI – 0.4
0.4
2
2
2
3
4
VDDI – 0.4
0.4
4
4
3
4
5
VDDI – 0.4
0.4
6
6
4
6
7
VDDI – 0.4
0.4
8
8
5
8
10
VDDI – 0.4
0.4
12
12
7
N/A
14
VDDI – 0.4
0.4
16
16
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 3.0 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-24 • LVCMOS 2.5 V Receiver Characteristics
TDIN
TSCH_DIN
On Die Termination
(ODT)
–1
Std.
–1
Std.
Units
LVCMOS 2.5 V (for DDRIO I/O bank)
N/A
TBD
TBD
TBD
TBD
ns
LVCMOS 2.5 V (for MSIO I/O bank)
N/A
2.594
3.052
2.561
3.013
ns
LVCMOS 2.5 V (for MSIOD I/O bank)
N/A
TBD
TBD
TBD
TBD
ns
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-25 • LVCMOS 2.5 V Transmitter Characteristics
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
TDOUT
–1
Std.
TENZL
–1
Std.
TENZH
TENHZ
TENZH
–1
Std.
–1
Std.
–1
Std.
Units
LVCMOS 2.5 V (for DDRIO I/O bank with FIED CODES)
2
4
5
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 25
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-25 • LVCMOS 2.5 V Transmitter Characteristics (continued)
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
7
10
14
TDOUT
TENZL
TENZH
TENHZ
TENZH
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LVCMOS 2.5 V (for MSIO I/O bank)
1
None
3.534
4.158
3.816
4.489
3.742
4.402
3.888
4.574
3.814
4.487
ns
2
None
2.651
3.118
3.898
4.586
4.625
5.441
3.971
4.672
4.698
5.527
ns
3
None
2.463
2.898
4.794
5.639
4.994
5.875
4.867
5.725
5.067
5.961
ns
4
None
2.382
2.802
5.724
6.734
5.417
6.373
5.797
6.82
5.49
6.459
ns
5
None
2.405
2.829
5.883
6.921
5.593
6.58
5.956
7.007
5.666
6.666
ns
7
None
2.481
2.918
6.281
7.389
5.871
6.907
6.354
7.475
5.944
6.993
ns
LVCMOS 2.5 V (for MSIOD I/O bank)
2
None
2.367
2.786
5.054
5.946
4.749
5.587
5.158
6.069
4.853
5.71
ns
3
None
1.978
2.328
5.533
6.509
5.159
6.069
5.637
6.632
5.263
6.192
ns
4
None
1.843
2.169
5.927
6.973
5.495
6.465
6.031
7.096
5.599
6.588
ns
6
None
1.757
2.067
6.33
7.447
5.795
6.818
6.434
7.57
5.899
6.941
ns
8
None
1.77
2.083
6.607
7.773
5.998
7.056
6.711
7.896
6.102
7.179
ns
2- 26
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
1.8 V LVCMOS
LVCMOS 1.8 is a general standard for 1.8 V applications and is supported in SmartFusion2 FPGAs in
compliance to the JEDEC specification JESD8-7A.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-26 • LVCMOS 1.8 V DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
1.710
1.8
1.89
V
VIH (DC) DC input logic High for (MSIOD and DDRIO I/O bank)
0.65 * VDDI
–
1.89
V
VIH (DC) DC input logic High (for MSIO I/O bank)
0.65 * VDDI
–
3.45
V
–0.3
–
0.35 * VDDI
V
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVCMOS 1.8 V DC Input Voltage Specification
VIL (DC) DC input logic Low
IIH (DC)
Input current High
–
–
10
mA
IIL (DC)
Input current Low
–
–
10
mA
LVCMOS 1.8 V DC Output Voltage Specification
VOH
DC output logic High
VDDI – 0.45
–
–
V
VOL
DC output logic Low
–
–
0.45
V
LVCMOS 1.8 V AC Specifications
Fmax
Maximum data rate (for AC loading: 5 pF load,
DDRIO I/O bank)
maximum drive/slew
–
–
200
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIO I/O bank)
load, maximum drive/slew
–
–
295
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIOD I/O bank)
load, maximum drive/slew
–
–
320
Mbps
Supported output driver
calibrated impedance (for
DDRIO I/O bank)
75, 60,
50, 33,
25, 20
Ohms
LVCMOS 1.8 V AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
0.9
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2k
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Table 2-27 • LVCMOS 1.8 V Transmitter Drive Strength Specifications
Output Drive Selection
MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank
VOH (V)
VOL (V)
Min.
Max.
IOH (at VOH) IOL (at VOL)
mA
mA
Notes
2
2
2
VDDI – 0.4
0.45
2
2
3
3
3
VDDI – 0.4
0.45
4
4
4
5
4
VDDI – 0.4
0.45
6
6
5
6
5
VDDI – 0.4
0.45
8
8
6
8
7
VDDI – 0.4
0.45
10
10
7
N/A
8
VDDI – 0.4
0.45
12
12
N/A
N/A
10
VDDI – 0.4
0.45
16
16
Revision 0
2- 27
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 1.71 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-28 • LVCMOS 1.8 V Receiver Characteristics
TDIN
TSCH_DIN
Units
On Die Termination (ODT)
–1
Std.
–1
Std.
0
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
0
3.241
3.813
3.248
3.82
ns
50
3.377
3.973
3.381
3.977
ns
75
3.332
3.92
3.342
3.932
ns
150
3.285
3.865
3.297
3.879
ns
0
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
LVCMOS 1.8 V
(for DDRIO I/O bank)
LVCMOS 1.8 V
(for MSIO I/O bank)
LVCMOS 1.8 V
(for MSIOD I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-29 • LVCMOS 1.8 V Transmitter Characteristics
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
TDOUT
–1
Std.
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
LVCMOS 1.8 V (for DDRIO I/O bank)
2
3
4
2- 28
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-29 • LVCMOS 1.8 V Transmitter Characteristics (continued)
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
5
7
8
10
TDOUT
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LVCMOS 1.8 V (for MSIO I/O bank)
2
None
3.486
4.101
4.621
5.436
5.107
6.008
4.607
5.419
5.093
5.991
ns
3
None
3.244
3.816
5.351
6.295
5.518
6.492
5.337
6.278
5.504
6.475
ns
4
None
3.148
3.703
6.32
7.436
5.963
7.015
6.306
7.419
5.949
6.998
ns
5
None
3.189
3.752
8.577
7.738
6.131
7.213
6.563
7.721
6.117
7.196
ns
6
None
3.241
3.812
6.956
8.184
6.344
7.464
6.942
8.167
6.33
7.447
ns
7
None
3.319
3.904
7.076
8.324
6.44
7.577
7.062
8.307
6.426
7.56
ns
LVCMOS 1.8 V (For MSIOD I/O bank)
2
None
2.789
3.282
5.321
6.26
4.98
5.86
5.383
6.333
5.042
5.933
ns
3
None
2.332
2.744
5.846
6.878
5.42
6.377
5.908
6.951
5.482
6.45
ns
5
None
2.1
2.472
6.497
7.644
5.945
6.994
6.559
7.717
6.007
7.067
ns
6
None
2.099
2.47
6.755
7.947
6.142
7.227
6.817
8.02
6.204
7.3
ns
8
None
2.136
2.513
7.046
8.29
6.355
7.477
7.108
8.363
6.417
7.55
ns
Revision 0
2- 29
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
1.5 V LVCMOS
LVCMOS 1.5 is a general standard for 1.5 V applications and is supported in SmartFusion2 FPGAs in
compliance to the JEDEC specification JESD8-11A.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-30 • LVCMOS 1.5 V DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
1.425
1.5
1.575
V
VIH (DC) DC input logic High for (MSIOD and DDRIO I/O banks) 0.65 * VDDI
–
1.575
V
VIH (DC) DC input logic High (for MSIO I/O bank)
0.65 * VDDI
–
3.45
V
–0.3
–
0.35 * VDDI
V
Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVCMOS 1.5 V DC Input Voltage Specification
VIL (DC) DC input logic Low
IIH (DC)
Input current High
–
–
10
mA
IIL (DC
Input current Low
–
–
10
mA
LVCMOS 1.5 V DC Output Voltage Specification
VOH
DC output logic High
VDDI * 0.75
–
–
V
VOL
DC output logic Low
–
–
VDDI * 0.25
V
LVCMOS 1.5 V AC Specifications
Fmax
Maximum data rate (for AC loading: 5 pF load,
DDRIO I/O bank)
maximum drive/slew
–
–
130
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIO I/O bank)
load, maximum drive/slew
–
–
80
Mbps
Fmax
Maximum data rate (for AC loading: 10 pF / 500 Ohm
MSIOD I/O bank)
load, maximum drive/slew
–
–
170
Mbps
Supported output driver
calibrated
impedance
(for DDRIO I/O bank)
75, 60,
50, 40
Ohms
LVCMOS 1.5 V AC Test Parameters Specifications
Vtrip
Measuring/trip point
–
0.75
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Table 2-31 • LVCMOS 1.5 V Transmitter Drive Strength Specifications
Output Drive Selection
MSIO I/O
Bank
VOH (V)
VOL (V)
Min.
Max.
MSIOD I/O
Bank
DDRIO I/O
Bank
2
3
2
VDDI * 0.75 VDDI * 0.25
2
2
4
5
4
VDDI * 0.75 VDDI * 0.25
4
4
5
7
6
VDDI * 0.75 VDDI * 0.25
6
6
7
N/A
8
VDDI * 0.75 VDDI * 0.25
8
8
N/A
N/A
10
VDDI * 0.75 VDDI * 0.25
10
10
N/A
N/A
12
VDDI * 0.75 VDDI * 0.25
12
12
2- 30
R e visio n 0
IOH (at VOH) IOL (at VOL)
mA
mA
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 1.425 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-32 • LVCMOS 1.5 V Receiver Characteristics
TDIN
TSCH_DIN
On Die Termination
(ODT)
–1
Std.
–1
Std.
Units
0
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
0
3.817
4.49
3.844
4.522
ns
50
4.13
4.858
4.164
4.898
ns
75
4.01
4.717
4.044
4.757
ns
150
3.916
4.607
3.944
4.64
ns
0
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
LVCMOS 1.5 V
(for DDRIO I/O bank)
LVCMOS 1.5 V
(for MSIO I/O bank)
LVCMOS 1.5 V
(for MSIOD I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-33 • LVCMOS 1.5 V Transmitter Characteristics
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
TDOUT
–1
Std.
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
LVCMOS 1.5 V (for DDRIO I/O bank)
2
4
6
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 31
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-33 • LVCMOS 1.5 V Transmitter Characteristics (continued)
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
8
10
12
TDOUT
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LVCMOS 1.5 V (for MSIO I/O bank)
2
None
4.437
5.219
5.342
6.285
5.57
6.552
5.295
6.23
5.523
6.497
ns
4
None
3.989
4.692
7.006
8.242
6.488
7.633
6.959
8.187
6.441
7.578
ns
5
None
4.046
4.76
7.288
8.574
6.664
7.839
7.241
8.519
6.617
7.784
ns
7
None
4.226
4.971
7.869
9.257
6.99
8.224
7.822
9.202
6.943
8.169
ns
LVCMOS 1.5 V (For MSIOD I/O bank)
3
None
2.788
3.279
6.125
7.206
5.662
6.661
6.179
7.27
5.716
6.725
ns
5
None
2.489
2.927
6.831
8.037
6.24
7.341
6.885
8.101
6.294
7.405
ns
7
None
2.508
2.95
7.212
8.484
6.527
7.679
7.266
8.548
6.581
7.743
ns
2- 32
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
1.2 V LVCMOS
LVCMOS 1.2 is a general standard for 1.2 V applications and is supported in SmartFusion2 FPGAs in
compliance to the JEDEC specification JESD8-12A.
LVCMOS 1.2 V Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-34 • LVCMOS 1.2 V DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
1.14
1.2
1.26
V
VIH (DC) DC input logic High for (MSIOD and DDRIO I/O bank) 0.65 * VDDI
–
1.26
V
VIH (DC) DC input logic High (for MSIO I/O bank)
0.65 * VDDI
–
3.45
V
–0.3
–
0.35 * VDDI
V
Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVCMOS 1.2 V DC Input Voltage Specification
VIL (DC) DC input logic Low
IIH (DC)
Input current High
–
–
10
mA
IIL (DC)
Input current Low
–
–
10
mA
LVCMOS 1.2 V DC Output Voltage Specification
VOH
DC output logic High
VDDI * 0.75
–
–
V
VOL
DC output logic Low
–
–
VDDI * 0.25
V
LVCMOS 1.2 V AC Specifications
Fmax
Maximum data rate (for AC loading: 2 pF load,
DDRIO I/O bank)
maximum drive/slew
–
–
75
Mbps
Fmax
Maximum data rate (for AC loading: 2.5 pF load,
MSIO I/O bank)
maximum drive/slew
–
–
50
Mbps
Fmax
Maximum data rate (for AC loading: 2.5 pF load,
MSIOD I/O bank)
maximum drive/slew
–
–
100
Mbps
Rref
Supported output driver
calibrated impedance (for
DDRIO I/O bank)
75, 60,
50, 40
Ohms
LVCMOS 1.2 V AC Test Parameters Specifications
Vtrip
Measuring/trip point
–
0.6
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Table 2-35 • LVCMOS 1.2 V Transmitter Drive Strength Specifications
Output Drive Selection
MSIO I/O
Bank
VOH (V)
VOL (V)
Min.
Max.
MSIOD I/O
Bank
DDRIO I/O
Bank
4
4
4
VDDI * 0.75 VDDI * 0.25
2
2
7
8
8
VDDI * 0.75 VDDI * 0.25
4
4
N/A
12
VDDI * 0.75 VDDI * 0.25
6
6
N/A
Revision 0
IOH (at VOH) IOL (at VOL)
mA
mA
Notes
2- 33
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 1.14 V
AC Switching Characteristics for Receiver (Input Buffers))
Table 2-36 • LVCMOS 1.2 V Receiver Characteristics
TDIN
LVCMOS 1.2 V
(for DDRIO I/O bank)
LVCMOS 1.2 V
(for MSIO I/O bank)
LVCMOS 1.2 V
(for MSIOD I/O bank)
2- 34
TSCH_DIN
On Die Termination (ODT)
–1
Std.
–1
Std.
Units
0
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
0
5.3
6.235
5.335
6.276
ns
50
6.776
7.971
6.836
8.042
ns
75
6.179
7.269
6.23
7.32
ns
150
5.683
6.686
5.73
6.741
ns
0
TBD
TBD
TBD
TBD
ns
50
4.639
5.458
4.676
5.502
ns
75
5.599
6.588
5.66
6.66
ns
150
5.037
5.926
5.081
5.978
ns
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-37 • LVCMOS 1.2 V Transmitter Characteristics
Slew
Output
Control
Drive
(0 lowest,
Selection 3 highest)
TDOUT
–1
Std.
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
LVCMOS 1.2 V (for DDRIO I/O bank)
4
8
12
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
1
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
3
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LVCMOS 1.2 V (for MSIO I/O bank)
4
None
5.87
6.905
8.659
10.186
7.563
8.897
8.53
10.035
7.434
8.746
ns
7
None
6.215
7.312
9.639
11.339
8.114
9.546
9.51
11.188
7.985
9.395
ns
LVCMOS 1.2 V (For MSIOD I/O bank)
4
None
3.509
4.128
7.29
8.577
6.693
7.874
7.356
8.654
6.759
7.951
ns
8
None
3.419
4.022
8.135
9.571
7.347
8.644
8.201
9.648
7.413
8.721
ns
Revision 0
2- 35
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
3.3 V PCI/PCIX
Peripheral Component Interface (PCI) for 3.3 V standards specifies support for 33 MHz and 66 MHz PCI
bus applications.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-38 • PCI/PCIX DC Voltage Specification – Applicable to MSIO Bank ONLY
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
3.15
3.3
3.45
V
PCI/PCIX Recommended DC Operating Conditions
VDDI
Supply Voltage
PCI/PCIX DC Input Voltage Specification
VI
DC input voltage
0
–
3.45
V
IIH(DC)
Input current High
–
–
10
µA
IIL(DC)
Input current Low
–
–
10
µA
PCI/PCIX DC Output Voltage Specification
VOH
DC output logic High
Per PCI Specification
V
VOL
DC output logic Low
Per PCI Specification
V
–
–
630
Mbps
PCI/PCIX AC Specifications
Fmax
Maximum data rate (MSIO
I/O bank)
AC Loading: per JEDEC
specifications
PCI/PCIX AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path (falling edge)
–
0.615 * VDDI
–
V
Vtrip
Measuring/trip point for data path (rising edge)
–
0.285 * VDDI
–
V
Rtt_test
Resistance for data test path
–
25
–
Ohms
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 36
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 3.0 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-39 • AC Switching Characteristics for Receiver (Input Buffers)
On Die Termination
(ODT)
None
PCI/PCIX (for MSIO I/O bank)
TDIN
TSCH_DIN
Speed Grade
Speed Grade
–
Std.
–1
Std.
Units
2.266
2.667
2.25
2.648
ns
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-40 • AC Switching Characteristics for Transmitter (Output and Tristate Buffers
TDOUT
–1
Std.
TENZL
–1
TENZH
TENHZ
TENLZ
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
PCI/PCIX (for MSIO I/O bank)
TBD
TBD
TBD
Revision 0
2- 37
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Memory Interface and Voltage Referenced I/O Standards
High-Speed Transceiver Logic (HSTL)
The High-Speed Transceiver Logic (HSTL) standard is a general purpose high-speed bus standard
sponsored by IBM (EIA/JESD8-6). SmartFusion2 devices support two classes of the 1.5 V HSTL. These
differential versions of the standard require a differential amplifier input buffer and a push-pull output
buffer.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-41 • HSTL DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
1.425
1.5
1.575
V
VTT
Termination Voltage
0.698
0.750
0.803
V
VREF
Input Reference Voltage
0.698
0.750
0.803
V
HSTL DC Input Voltage Specification
VIH (DC)
DC input logic High
VREF + 0.1
–
1.575
V
VIL (DC)
DC input logic Low
–0.3
–
VREF – 0.1
V
IIH (DC)
Input current High
–
–
10
V
IIL (DC)
Input current Low
–
–
10
V
VDDI – 0.4
–
–
V
HSTL DC Output Voltage Specification
HSTL Class I
VOH
DC output logic High
VOL
DC output logic Low
–
–
0.4
V
IOH at VOH Output minimum source DC current (MSIOD I/O bank)
–7.8
–
–
mA
1
IOL at VOL Output minimum sink current (MSIOD I/O bank)
7.8
–
–
mA
1
IOH at VOH Output minimum source DC current (MSIO and
DDRIO I/O banks)
–8.0
–
–
mA
IOL at VOL Output minimum sink current (MSIO and DDRIO I/O
banks)
8.0
–
–
mA
HSTL Class II (Applicable to MSIO and DDRIO IO Bank only)
VOH
DC output logic High
VDDI – 0.4
–
–
V
VOL
DC output logic Low
–
–
0.4
V
IOH at VOH Output minimum source DC current
–16.0
–
–
mA
IOL at VOL Output minimum sink current
16.0
–
–
mA
DC input differential voltage
0.2
–
–
V
VDIFF (AC) AC input differential voltage
0.4
–
–
V
Vx (AC)
0.68
–
0.9
V
–
–
800
Mbps
–
–
140
Mbps
HSTL AC/DC Differential Voltage Specifications
VID (DC)
AC differential cross point voltage
HSTL AC Specifications
Fmax
Maximum data rate (DDRIO
I/O bank)
AC loading: per
JEDEC specifications
Fmax
Maximum data rate (for MSIO AC loading:
I/O bank)
3 pF / 50 Ohm load
Notes:
1. MSIOD I/O bank HSTL Class I does not meet standard JEDEC test point. Use provided lower current values as
specified.
2- 38
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-41 • HSTL DC Voltage Specification (continued)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
Fmax
Maximum data rate (for
MSIOD I/O bank)
AC loading:
3 pF / 50 Ohm load
–
–
180
Mbps
Rref
Supported output driver
calibrated impedance (for
DDRIO I/O bank)
Reference resistance
= 191 Ohms
–
25.5,
47.8
–
Ohms
RTT
Effective impedance value
Reference resistance
(with respect to reference
= 191 Ohms
resistor of 191 Ohms) (ODT for
DDRIO I/O bank only)
–
47.8
–
Ohms
RTT
Effective impedance value
Reference resistance
(ODT for MSIO and MSIOD I/O = 191 Ohms
banks only)
–
50, 75,
150
–
Ohms
HSTL AC Test Parameters Specification
Vtrip
Measuring/trip point for data path
–
–
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
Rtt_test
Reference resistance for data test path for SSTL15
Class I (tDP)
Rtt_test
Reference resistance for data test path for SSTL15
Class II (tDP)
–
25
–
Ohms
Cload
Capacitive Loading for Data Path (tDP)
–
5
–
pF
50
Ohms
Notes:
1. MSIOD I/O bank HSTL Class I does not meet standard JEDEC test point. Use provided lower current values as
specified.
Revision 0
2- 39
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
AC Switching Characteristics
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-42 • HSTL Receiver Characteristics
On Die
Termination
(ODT)
TDIN
TSCH_DIN
–1
Std.
–1
Std.
Units
None
TBD
TBD
N/A
N/A
ns
47.8
TBD
TBD
N/A
N/A
ns
HSTL (for DDRIO I/O bank)
Pseudo-Differential
True-Differential
None
TBD
TBD
N/A
N/A
ns
47.8
TBD
TBD
N/A
N/A
ns
None
13.8
16.236
18.906
22.242
ns
50
13.65
16.059
19.056
22.419
ns
75
13.637
16.044
19.02
22.377
ns
HSTL (for MSIO I/O bank)
Pseudo-Differential
True-Differential
150
13.597
15.996
18.964
22.31
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
HSTL (for MSIOD I/O bank)
Pseudo-Differential
True-Differential
2- 40
150
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-43 • HSTL Transmitter Characteristics
TDOUT
–1
TENZL
TENZH
TENHZ
TENLZ
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
HSTL Class I
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIOD I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
HSTL Class II
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 41
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Stub-Series Terminated Logic
Stub-Series Terminated Logic (SSTL) for 2.5 V (SSTL2), 1.8 V (SSTL18), and 1.5 V (SSTL15) is
supported in SmartFusion2 devices. SSTL2 is defined by JEDEC standard JESD8-9B and SSTL18 is
defined by JEDEC standard JESD8-15. SmartFusion2 SSTL I/O configurations are designed to meet
double data rate standards DDR/2/3 for general purpose memory buses. Double data rate standards are
designed to meet their JEDEC specifications as defined by JEDEC standard JESD79F for DDR, JEDEC
standard JESD79-2F for DDR, JEDEC standard JESD79-3D for DDR3 and JEDEC standard JESD209A
for LPDDR.
Stub-Series Terminated Logic 2.5 V (SSTL2)
SSTL2 Class I and Class II are supported in SmartFusion2 devices, and also comply with reduced and
full drive of double data rate (DDR) standards. SmartFusion2 FPGA I/O supports both standards for
single-ended signaling and differential signaling for SSTL2. This standard requires a differential amplifier
input buffer and a push-pull output buffer.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-44 • DDR1/SSTL2 DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
2.375
2.5
2.625
V
VTT
Termination Voltage
1.164
1.250
1.339
V
VREF
Input Reference Voltage
1.164
1.250
1.339
V
DDR/SSTL2 DC Input Voltage Specification
VIH (DC)
DC input logic High
VREF + 0.125
–
2.625
V
VIL (DC)
DC input logic Low
–0.3
–
VREF – 0.15
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Lo
–
–
10
µA
DDR/SSTL2 DC Output Voltage Specification
SSTL2 Class I (DDR Reduced Drive)
VOH
DC output logic High
VTT + 0.608
–
–
V
VOL
DC output logic Low
–
–
VTT – 0.608
V
IOH at VOH Output minimum source DC current
8.1
–
–
mA
IOL at VOL
–8.1
–
–
mA
Output minimum sink current
SSTL2 Class II (DDR Full Drive) – Applicable to MSIO and DDRIO I/O Banks ONLY
VOH
DC output logic High
VTT + 0.81
–
–
V
VOL
DC output logic Low
–
–
VTT – 0.81
V
IOH at VOH Output minimum source DC current
16.2
–
–
mA
IOL at VOL
–16.2
–
–
mA
DC input differential voltage
0.3
–
–
V
VDIFF (AC) AC input differential voltage
0.7
–
–
V
0.5 * VDDI
– 0.2
–
0.5 * VDDI
+ 0.2
V
Output minimum sink current
SSTL2 AC/DC Differential Voltage Specification
VID (DC)
Vx (AC)
2- 42
AC differential cross point voltage
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-44 • DDR1/SSTL2 DC Voltage Specification (continued)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
SSTL2 AC Specifications
Fmax
Maximum data rate (for AC loading: per JEDEC
DDRIO I/O bank)
specifications
–
–
400
Mbps
Fmax
Maximum data rate (for AC loading:
MSIO I/O bank)
10 pF / 50 Ohm load
–
–
575
Mbps
Fmax
Maximum data rate (for AC loading:
MSIOD I/O bank)
30 pF / 50 Ohm load
–
–
700
Mbps
Rref
Supported output driver Reference resistor
calibrated impedance = 150 Ohms
(for DDRIO I/O bank)
–
20, 42
–
Ohms
AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
1.25
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ,
tLZ)
–
5
–
pF
Rs
Series resistance for data test path (tDP)
–
25
–
Ohms
Rtt_test
Reference resistance for data test path for SSTL2
Class I (tDP)
–
50
–
Ohms
Rtt_test
Reference resistance for data test path for SSTL2
Class II (tDP)
–
25
–
Ohms
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Revision 0
2- 43
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-45 • DDR1/SSTL2 Receiver Characteristics
TDIN
On Die
Termination (ODT)
TSCH_DIN
–1
Std.
–1
Std.
Units
SSTL2 (for DDRIO I/O bank)
Pseudo-Differential
None
TBD
TBD
–
–
ns
True-Differential
None
TBD
TBD
–
–
ns
Pseudo-Differential
None
2.805
3.3
2.987
3.515
ns
True-Differential
None
TBD
TBD
TBD
TBD
ns
Pseudo-Differential
None
TBD
TBD
TBD
TBD
ns
True-Differential
None
TBD
TBD
TBD
TBD
ns
SSTL2 (for MSIO I/O bank)
SSTL2 (for MSIOD I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-46 • DDR1/SSTL2 Transmitter Characteristics
TDOUT
–1
STD
TENZL
–1
STD
TENZH
–1
STD
TENHZ
–1
STD
TENLZ
–1
STD
Units
SSTL2 Class I
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIOD I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
SSTL2 Class II
For MSIOD I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
2- 44
TBD
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Stub-Series Terminated Logic 1.8 V (SSTL18)
SSTL18 Class I and Class II are supported in SmartFusion2 devices, and also comply with the reduced
and full drive double date rate (DDR2) standard. SmartFusion2 FPGA I/O supports both standards for
single-ended signaling and differential signaling for SSTL18. This standard requires a differential
amplifier input buffer and a push-pull output buffer.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-47 • SSTL18 DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
1.71
1.8
1.89
V
VTT
Termination Voltage
0.838
0.900
0.964
V
VREF
Input Reference Voltage
0.838
0.900
0.964
V
SSTL18 DC Input Voltage Specification
VIH (DC)
DC input logic High
VREF + 0.125
–
1.89
V
VIL (DC)
DC input logic Low
–0.3
–
VREF – 0.125
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
SSTL18 DC Output Voltage Specification
SSTL18 Class I (DDR2 Reduced Drive)
VOH
DC output logic High
VTT + 0.603
–
–
V
VOL
DC output logic Low
–
–
VTT– 0.603
V
IOH at VOH Output minimum source DC current (MSIO I/O
bank only
4.7
–
–
mA
1
IOL at VOL
Output minimum sink current (MSIO I/O bank
only)
–4.7
–
–
mA
1
IOH at VOH Output minimum source DC current (MSIOD I/O
bank only
6.3
–
–
mA
1
IOL at VOL
Output minimum sink current (MSIOD I/O bank
only)
–6.3
–
–
mA
1
IOH at VOH Output minimum source DC current (DDRIO I/O
bank only
6.5
–
–
mA
1
IOL at VOL
–6.5
–
–
mA
1
Output minimum sink current (DDRIO I/O bank
only)
Notes:
1. MSIO I/O bank SSTL18/DDR2 Reduced Drive does not have a standard test point. This is defined to fit within the DDR2
Reduced Drive IV Curve minimums.
2. MSIO I/O bank SSTL18/DDR2 Class II does not meet the standard JEDEC test points. Use provided lower current values
as specified.
Revision 0
2- 45
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-47 • SSTL18 DC Voltage Specification (continued)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
STL18 Class II (DDR2 Full Drive) – Applicable to MSIO and DDRIO I/O Banks ONLY
VOH
DC output logic High
VTT + 0.603
–
–
V
VOL
DC output logic Low
–
–
VTT– 0.603
V
IOH at VOH Output minimum source DC current (MSIO I/O
bank only)
9.3
–
–
mA
IOL at VOL
Output minimum sink current (MSIO I/O bank
only)
–9.3
–
–
mA
IOH at VOH Output minimum source DC current (DDRIO I/O
bank only)
13.4
–
–
mA
IOL at VOL
–13.4
–
–
mA
DC input differential voltage
0.3
–
–
V
VDIFF (AC) AC input differential voltage
0.7
Output minimum sink current (DDRIO I/O bank
only)
SSTL18 AC/DC Differential Voltage Specification
VID (DC
Vx (AC)
AC differential cross point voltage
V
0.5 * VDDI
– 0.175
–
0.5 * VDDI
+ 0.175
V
SSTL18 AC Specification
Fmax
Maximum data rate (for
DDRIO I/O bank)
AC loading: per
JEDEC specification
–
–
800
Mbps
Fmax
Maximum data rate (for
MSIO I/O bank)
AC loading:
3 pF / 25 Ohm load
–
–
432
Mbps
Fmax
Maximum data rate (for
MSIOD I/O bank)
AC loading:
3 pF / 25 Ohm load
–
–
430
Mbps
Rref
Supported output driver
Reference resistor
calibrated impedance (for = 150 Ohms
DDRIO I/O bank)
–
20, 42
Ohms
RTT
Effective impedance value Reference resistor
(with respect to reference = 150 Ohms
resistor 150 Ohms) (ODT
for DDRIO I/O bank only)
–
50, 75,
150
Ohms
Notes:
1. MSIO I/O bank SSTL18/DDR2 Reduced Drive does not have a standard test point. This is defined to fit within the DDR2
Reduced Drive IV Curve minimums.
2. MSIO I/O bank SSTL18/DDR2 Class II does not meet the standard JEDEC test points. Use provided lower current values
as specified.
2- 46
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-47 • SSTL18 DC Voltage Specification (continued)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
0.9
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL,
tHZ, tLZ)
–
5
–
pF
Rs
Series resistance for data test path (tDP)
–
25
–
Ohms
Rtt_test
Reference resistance for data test path for
SSTL18 Class I (tDP)
–
50
–
Ohms
Rtt_test
Reference resistance for data test path for
SSTL18 Class II (tDP)
–
25
–
Ohms
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
Notes:
1. MSIO I/O bank SSTL18/DDR2 Reduced Drive does not have a standard test point. This is defined to fit within the DDR2
Reduced Drive IV Curve minimums.
2. MSIO I/O bank SSTL18/DDR2 Class II does not meet the standard JEDEC test points. Use provided lower current values
as specified.
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 1.71 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-48 • DDR2/SSTL18 Receiver Characteristics
ODT (On Die
Termination)
TDIN
TSCH_DIN
–1
STD
–1
STD
Units
None
TBD
TBD
N/A
N/A
ns
50
TBD
TBD
N/A
N/A
ns
75
TBD
TBD
N/A
N/A
ns
150
TBD
TBD
N/A
N/A
ns
None
TBD
TBD
N/A
N/A
ns
50
TBD
TBD
N/A
N/A
ns
75
TBD
TBD
N/A
N/A
ns
150
TBD
TBD
N/A
N/A
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
SSTL18 (for DDRIO I/O bank)
Pseudo-Differential
True-Differential
SSTL18 (for MSIO I/O bank)
Pseudo-Differential
Revision 0
2- 47
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-48 • DDR2/SSTL18 Receiver Characteristics
TDIN
TSCH_DIN
ODT (On Die
Termination)
–1
STD
–1
STD
Units
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
50
TBD
TBD
TBD
TBD
ns
75
TBD
TBD
TBD
TBD
ns
150
TBD
TBD
TBD
TBD
ns
True-Differential
SSTL18 (for MSIOD I/O bank)
Pseudo-Differential
True-Differential
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-49 • DDR2/SSTL18 Transmitter Characteristics
TDOUT
TENZL
TENZH
TENHZ
TENLZ
–1
STD
–1
STD
–1
STD
–1
STD
–1
STD
Units
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIOD I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
For MSIOD I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
SSTL2 Class I
SSTL2 Class II
2- 48
TBD
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Stub-Series Terminated Logic 1.5 V (SSTL15)
SSTL15 Class I and Class II are supported in SmartFusion2 devices, and also comply with the reduced
and full drive double data rate (DDR3) standard. SmartFusion2 FPGA I/O supports both standards for
single-ended signaling and differential signaling for SSTL18. This standard requires a differential
amplifier input buffer and a push-pull output buffer.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-50 • SSTL15 DC Voltage Specification (for DDRIO I/O Bank Only)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
1.425
1.5
1.575
V
VTT
Termination Voltage
0.698
0.750
0.803
V
VREF
Input Reference Voltage
0.698
0.750
0.803
V
SSTL15 DC Input Voltage Specification
VIH(DC)
DC input logic High
VREF + 0.1
–
1.575
V
VIL(DC)
DC input logic Low
–0.3
–
VREF – 0.1
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
SSTL15 DC Output Voltage Specification
DDR3/SSTL15 Class I (DDR3 Reduced Drive)
VOH
DC output logic High
0.8 * VDDI
–
–
V
VOL
DC output logic Low
–
–
0.2 * VDDI
V
IOH at VOH Output minimum source DC current
6.5
–
–
mA
–6.5
–
–
mA
IOL at VOL
Output minimum sink current
SSTL15 Class II (DDR3 Full Drive)
VOH
DC output logic High
0.8 * VDDI
–
–
V
VOL
DC output logic Low
–
-
0.2 * VDDI
V
IOH at VOH Output minimum source DC current
7.6
–
–
mA
IOL at VOL
–7.6
–
–
mA
Output minimum sink current
SSTL15 Differential Voltage Specification
VID (DC)
DC input differential voltage
0.2
–
–
V
VDIFF (AC)
AC input differential voltage
0.7
–
–
V
Vx (AC)
AC differential cross point voltage
0.5 * VDDI
– 0.150
–
0.5 * VDDI
+ 0.150
V
Revision 0
2- 49
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-50 • SSTL15 DC Voltage Specification (for DDRIO I/O Bank Only) (continued)
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
800
Mbps
SSTL15 AC Specification
Fmax
Maximum Data Rate
(for DDRIO I/O bank)
AC loading: per
JEDEC specifications
Rref
Supported output driver Reference resistor =
calibrated impedance
240 Ohms
34, 40
Ohms
RTT
Effective impedance
Reference resistor =
value (with respect to
240 Ohms
Reference Resistor 240
ohms) (ODT for DDRIO
I/O bank only)
20, 30,
40, 60,
120
Ohms
AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
0.75
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL,
tHZ, tLZ)
–
5
–
pF
Rs
Series resistance for data test path (tDP)
–
25
–
Ohms
Rtt_test
Reference resistance for data test path for
SSTL15 Class I (tDP)
–
50
–
Ohms
Rtt_test
Reference resistance for data test path for
SSTL15 Class II (tDP)
–
25
–
Ohms
Cload
Capacitive loading for data path (tDP)
–
5
–
pF
2- 50
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 1.425 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-51 • SSTL15 Receiver Characteristics
TDIN
On Die Termination
(ODT)
–1
Std.
Units
None
TBD
TBD
ns
20
TBD
TBD
ns
30
TBD
TBD
ns
40
TBD
TBD
ns
60
TBD
TBD
ns
120
TBD
TBD
ns
None
TBD
TBD
ns
20
TBD
TBD
ns
30
TBD
TBD
ns
40
TBD
TBD
ns
60
TBD
TBD
ns
120
TBD
TBD
ns
DDR3/SSTL15 (For DDRIO I/O bank)
Pseudo-Differential
True-Differential
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-52 • DDR3/SSTL15 Transmitter Characteristics
TDOUT
–1
STD
TENZL
–1
TENZH
TENHZ
TENLZ
STD
–1
STD
–1
STD
–1
STD
Units
DDR3 Reduced Drive/SSTL15 Class I
For DDRIO I/O Bank
Single Ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
DDR3 Full DriveSSTL15 Class II
For DDRIO IO Bank
Single Ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 51
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Low Power Double Data Rate (LPDDR)
LPDDR reduced and full drive low power double data rate standards are supported in SmartFusion2
FPGA I/Os. This standard requires a differential amplifier input buffer and a push-pull output buffer.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-53 • LPDDR DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
Recommended DC Operating Conditions
VDDI
Supply Voltage
1.71
1.8
1.89
V
VTT
Termination Voltage
0.838
0.900
0.964
V
VREF
Input Reference Voltage
0.838
0.900
0.964
V
LPDDR DC Input Voltage Specification
VIH (DC)
DC input Logic High
0.3 * VDDI
–
1.89
V
VIL (DC)
DC input Logic Low
–0.3
–
0.7 * VDDI
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
LPDDR DC Output Voltage Specification
VOH
DC output Logic High
0.9 * VDDI
–
–
V
VOL
DC output Logic Low
–
–
0.1 * VDDI
V
IOH at VOH Output minimum source DC current
0.1
–
–
mA
IOL at VOL
–0.1
–
–
mA
DC input differential voltage
0.4 * VDDI
–
–
V
VDIFF (AC) AC input differential voltage
0.6 * VDDI
Vx (AC)
0.4 * VDDI
Output minimum sink current
LPDDR Differential Voltage Specification
VID (DC)
AC differential cross point voltage
V
–
0.6 * VDDI
V
LPDDR AC Specifications
Fmax
Maximum Data Rate
AC loading: per JEDEC
specifications
Mbps
Rref
Supported output
driver calibrated
impedance
Reference resistor =
150 Ohms
20, 42
Ohms
Rtt
Effective impedance
value – ODT
Reference resistor =
150 Ohms
50, 70,
150
Ohms
AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
0.9
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ,
tLZ)
–
5
–
pF
Rs
Series resistance for data test path (tDP)
–
25
–
Ohms
Rtt_test
Reference resistance for data test path for
LPDDR (tDP)
–
50
–
Ohms
Cload
Capacitive loading for data path (tDP)
–
5
–
Ohms
2- 52
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Table 2-54 • LPDDR Receiver Characteristics
TDIN
On Die Termination (ODT)
–1
Std.
Units
Pseudo-Differential
None
TBD
TBD
ns
True-Differential
None
TBD
TBD
ns
50
TBD
TBD
ns
75
TBD
TBD
ns
150
TBD
TBD
ns
LPDDR (for DDRIO I/O Bank)
Table 2-55 • LPDDR Transmitter Characteristics
TDOUT
–1
TENZL
TENZH
TENHZ
TENLZ
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
LPDDR Reduced Drive
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LPDDR Full Drive
For DDRIO I/O Bank
Single-ended
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Differential
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 53
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Differential I/O Standards
Configuration of the I/O modules as a differential pair is handled by SoC Products Group Libero software
when the user instantiates a differential I/O macro in the design. Differential I/Os can also be used in
conjunction with the embedded Input register (InReg), Output register (OutReg), Enable register
(EnReg), and Double Data Rate registers (DDR).
LVDS
Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard.
Minimum and Maximum Input and Output Levels
Table 2-56 • LVDS DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max. Units Notes
2.375
2.5
3.45
V
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVDS DC Input Voltage Specification
VI
DC Input voltage
0
–
2.925
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
LVDS DC Output Voltage Specification
VOH
DC output logic High
1.25
1.425
1.6
V
VOL
DC output logic Low
0.9
1.075
1.25
V
250
350
450
mV
LVDS Differential Voltage Specification
VOD
Differential output voltage swing
VOCM
Output common mode voltage
1.125
1.25
1.375
V
VICM
Input common mode voltage
0.05
1.25
1.375
V
VID
Input differential voltage
100
350
600
mV
–
–
535
Mbps
Mbps
LVDS AC Specifications
Fmax
Maximum data rate (for MSIO I/O
bank)
AC loading: 2 pF / 100 Ohm
differential load
Fmax
Maximum data rate (for MSIOD I/O AC loading: 2 pF / 100 Ohm
bank) – NO PRE-EMPHASIS
differential load
700
730
750
Fmax
Maximum data rate (for MSIOD I/O AC loading: 2 pF / 100 Ohm
bank) – MIN. PRE-EMPHASIS
differential load
970
1200
1270 Mbps
Fmax
Maximum Data Rate (for MSIOD IO AC loading: 2 pF / 100 Ohm
Bank) – MAX. PRE-EMPHASIS
differential load
1000
1500
1700 Mbps
Rt
Termination resistance
–
100
–
Ohms
AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
Cross
point
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 54
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-57 • LVDS Receiver Characteristics
TDIN
TSCH_DIN
On Die Termination
(ODT)
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
LVDS (for MSIO I/O bank)
LVDS (for MSIOD I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-58 • LVDS Transmitter Characteristics
TDOUT
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
No pre-emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Min. pre-emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Max. pre-emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
LVDS (For MSIO I/O bank)
LVDS (For MSIOD I/O bank)
Revision 0
2- 55
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
B-LVDS
Bus LVDS (B-LVDS) specifications extend the existing LVDS standard to high-performance multipoint
bus applications. Multidrop and multipoint bus configurations may contain any combination of drivers,
receivers, and transceivers.
Minimum and Maximum DC/AC Input and Output Levels Specification
Table 2-59 • B-LVDS DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units Notes
2.375
2.5
2.625
V
Recommended DC Operating Conditions
VDDI
Supply Voltage
Bus LVDS DC Input Voltage Specification
VI
DC input voltage
0
–
2.925
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
Bus LVDS DC Output Voltage Specification (For MSIO I/O Bank ONLY)
VOH
DC output logic High
1.25
1.425
1.6
V
VOL
DC output logic Low
0.9
1.075
1.25
V
Bus LVDS Differential Voltage Specification
VOD
Differential output voltage swing (for MSIO I/O bank
ONLY)
240
–
460
mV
VOCM
Output common mode voltage (for MSIO I/O bank ONLY)
1.1
–
1.5
V
VICM
Input common mode voltage
0.05
–
2.4 – VID/2
V
VID
Input differential voltage
100
–
2 * VDDI
mV
Bus LVDS AC Specifications
Fmax
Maximum data rate (for AC loading: 2 pF / 100 Ohm
MSIO I/O bank)
differential load
–
–
500
Mbps
Fmax
Maximum data rate (for MSIOD I/O bank, receiver ONLY)
–
–
–
Mbps
Rt
Termination resistance
–
27
–
Ohms
Bus LVDS AC Test Parameters Specifications
Vtrip
Measuring/trip point for data path
–
Cross
point
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 56
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-60 • AC Switching Characteristics for Receiver (Input Buffers)
TDIN
TSCH_DIN
On Die Termination
(ODT)
Speed Grade
Speed Grade
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
Bus LVDS (For MSIO I/O Bank)
Bus LVDS (For MSIOD I/O Bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-61 • AC Switching Characteristics for Transmitter (Output and Tristate Buffers
TDOUT
Bus-LVDS
(For MSIO I/O Bank)
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 57
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
M-LVDS
MLVDS specifications extend the existing LVDS standard to high-performance multipoint bus
applications. Multidrop and multipoint bus configurations may contain any combination of drivers,
receivers, and transceivers.
Minimum and Maximum Input and Output Levels
Table 2-62 • M-LVDS DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
2.375
2.5
2.625
V
M-LVDS Recommended DC Operating Conditions
VDDI
Supply Voltage
M-LVDS DC Input Voltage Specification
VI
DC input voltage
0
–
2.925
V
IIH (DC)
Input current High
–
–
10
µA
IIL (DC)
Input current Low
–
–
10
µA
M-LVDS DC Output Voltage Specification (For MSIO IO Bank ONLY)
VOH
DC output logic High
1.25
1.425
1.6
V
VOL
DC output logic Low
0.9
1.075
1.25
V
M-LVDS Differential Voltage Specification
VOD
Differential output voltage Swing (for MSIO I/O bank ONLY)
480
–
650
mV
VOCM
Output common mode voltage (for MSIO I/O bank ONLY)
0.3
–
2.1
V
VICM
Input common mode voltage
0.3
–
1.2
V
VID
Input differential voltage
50
–
2400
mV
M-LVDS AC Specifications
Fmax
Maximum data rate (for AC loading: 2 pF / 100 Ohm
MSIO I/O bank)
differential load
–
–
500
Mbps
Rt
Termination resistance
–
50
–
Ohms
M-LVDS AC Test Parameters Specifications
VTrip
Measuring/trip point for data path
–
Cross
point
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 58
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-63 • AC Switching Characteristics for Receiver (Input Buffers)
TDIN
TSCH_DIN
On Die Termination
(ODT)
Speed Grade
Speed Grade
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
MLVDS (For MSIO I/O Bank)
MLVDS (For MSIOD I/O Bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-64 • AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
TDOUT
M-LVDS (For MSIO I/O Bank)
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 59
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Mini-LVDS
Mini-LVDS is an unidirectional interface from the timing controller to the column drivers and is designed
to the Texas Instruments Standard SLDA007A.
Mini-LVDS Minimum and Maximum Input and Output Levels
Table 2-65 • Mini-LVDS DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
2.375
2.5
2.625
V
0
–
2.925
V
Recommended DC Operating Conditions
VDDI
Supply Voltage
Mini-LVDS DC Input Voltage Specification
VI
DC Input voltage
Mini-LVDS DC Output Voltage Specification
VOH
DC output logic High
1.25
1.425
1.6
V
VOL
DC output logic Low
0.9
1.075
1.25
V
300
–
600
mV
1
–
1.4
V
Mini-LVDS Differential Voltage Specification
VOD
Differential output voltage swing
VOCM
Output common mode voltage
VICM
Input common mode voltage
0.3
–
1.2
V
VID
Input differential voltage
200
–
600
mV
Mini-LVDS AC Specifications
Fmax
Maximum data rate (for MSIO I/O
bank)
AC loading: 2 pF / 100 Ohm
differential load
–
–
520
Mbps
Fmax
Maximum data rate (for MSIOD
I/O bank, No Pre-Emphasis)
AC loading: 2 pF / 100 Ohm
differential load
700
725
740
Mbps
Fmax
Maximum data rate (for MSIOD
I/O bank) – Min. Pre-Emphasis
AC loading: 2 pF / 100 Ohm
differential load
700
735
750
Mbps
Fmax
Maximum data rate (for MSIOD
I/O bank) – Med. Pre-Emphasis
AC loading: 2 pF / 100 Ohm
differential load
970
1,200
1,280
Mbps
Fmax
Maximum Data Rate (for MSIOD
I/O bank) – Max. Pre-Emphasis
AC loading: 2 pF / 100 Ohm
differential load
1,000
1,500
1,700
Mbps
Rt
Termination resistance
150
Ohms
50
Mini-LVDS AC Test Parameters Specifications
VTrip
Measuring/trip point for data path
–
Cross
point
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 60
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-66 • AC Switching Characteristics for Receiver (Input Buffers)
TDIN
TSCH_DIN
Speed Grade
Speed Grade
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
On Die Termination
(ODT)
Mini-LVDS (For MSIO I/O Bank)
Mini-LVDS (For MSIOD I/O Bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-67 • AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
TDOUT
Mini-LVDS
(for MSIO I/O bank)
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Mini-LVDS (for MSIOD I/O bank)
No Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Min. Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Max. Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Revision 0
2- 61
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
RSDS
Reduced Swing Differential Signaling (RSDS) is similar to an LVDS high-speed interface using
differential signaling. RSDS has a similar implementation to LVDS devices and is only intended for pointto-point applications.
Minimum and Maximum Input and Output Levels
Table 2-68 • RSDS DC Voltage Specification
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
2.375
2.5
2.625
V
0
–
2.925
V
Recommended DC Operating Conditions
VDDI
Supply Voltage
RSDS DC Input Voltage Specification
VI
DC input voltage
RSDS DC Output Voltage Specification
VOH
DC output Logic High
1.25
1.425
1.6
V
VOL
DC output Logic Low
0.9
1.075
1.25
V
RSDS Differential Voltage Specification
VOD
Differential output voltage swing
100
–
600
mV
VOCM
Output common mode voltage
0.5
–
1.5
V
VICM
Input common mode voltage
0.3
–
1.5
V
VID
Input differential voltage
100
–
2 * VDDI
mV
RSDS AC Specifications
Fmax
Maximum data rate (for AC loading: 2 pF / 100 Ohm
MSIO I/O bank)
differential load
–
–
520
Mbps
Fmax
Maximum data Rate (for AC loading: 2 pF / 100 Ohm
MSIOD I/O banks, No differential load
Pre-Emphasis)
700
725
740
Mbps
Fmax
Maximum Data Rate (for AC loading: 2 pF / 100 Ohm
MSIOD I/O Banks) – Min. differential load
Pre-Emphasis
700
735
750
Mbps
Fmax
Maximum data rate (for AC loading: 2 pF / 100 Ohm
MSIOD I/O banks) – Med. differential load
Pre-Emphasis
970
1200
1,280
Mbps
Fmax
Maximum data rate (for AC loading: 2 pF / 100 Ohm
MSIOD I/O banks) – Max. differential load
Pre-Emphasis)
1,000
1,500
1,700
Mbps
Rt
Termination Resistance
100
Ohms
AC Test Parameters Specifications
VTrip
Measuring/trip point for data path
–
Cross
point
–
V
Rent
Resistance for enable path (tZH, tZL, tHZ, tLZ)
–
2K
–
Ohms
Cent
Capacitive loading for enable path (tZH, tZL, tHZ, tLZ)
–
5
–
pF
2- 62
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-69 • AC Switching Characteristics for Receiver (Input Buffers)
TDIN
TSCH_DIN
On Die Termination
(ODT)
Speed Grade
Speed Grade
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
RSDS (for MSIO I/O bank)
RSDS (for MSIOD I/O bank)
AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
Table 2-70 • AC Switching Characteristics for Transmitter (Output and Tristate Buffers)
TDOUT
TENZL
TENZH
TENHZ
TENLZ
–1
Std.
–1
Std.
–1
Std.
–1
Std.
–1
Std.
Units
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
No Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Min. Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
Max. Pre-Emphasis
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
ns
RSDS (for MSIO I/O bank)
RSDS (for MSIOD I/O bank)
Revision 0
2- 63
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
LVPECL
Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires
that one data bit be carried through two signal lines. Similar to LVDS, two pins are needed. It also
requires external resistor termination. SmartFusion2 devices support only LVPECL receivers and do not
support LVPECL transmitters.
Minimum and Maximum Input and Output Levels
Table 2-71 • LVPECL DC Voltage Specification – Applicable to MSIO I/O Banks Only
Symbols
Parameters
Conditions
Min.
Typ.
Max.
Units
3.15
3.3
3.45
V
Notes
Recommended DC Operating Conditions
VDDI
Supply Voltage
LVPECL DC Input Voltage Specification
VIH (DC)
DC input logic High
–
–
2.3
V
VIL (DC)
DC input logic Low
1.6
–
–
V
2.8
V
LVPECL Differential Voltage Specification
VICM
Input common mode voltage
0.3
VIDIFF
Input differential voltage
100
300
1,000
mV
–
–
900
Mbps
Other Specifications
Fmax
Maximum data rate (for MSIO I/O bank)
AC Switching Characteristics
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V, VDDI = 2.375 V
AC Switching Characteristics for Receiver (Input Buffers)
Table 2-72 • LVPECL Receiver Characteristics
LVPECL (for MSIO I/O bank)
2- 64
TDIN
TSCH_DIN
On Die Termination
(ODT)
–1
Std.
–1
Std.
Units
None
TBD
TBD
TBD
TBD
ns
100
TBD
TBD
TBD
TBD
ns
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
I/O Register Specifications
Input Register
Table 2-73 • Input Data Enable Register Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V
Parameter
Measuring
Nodes
(from, to)*
–1
Std.
Units
Clock-to-Q of the Input Data Register
TBD
TBD
ns
tISUD
Data Setup Time for the Input Data Register
TBD
TBD
ns
tIHD
Data Hold Time for the Input Data Register
TBD
TBD
ns
tISUE
Enable Setup Time for the Input Data Register
TBD
TBD
ns
tIHE
Enable Hold Time for the Input Data Register
TBD
TBD
ns
tICLR2Q
Asynchronous Clear-to-Q of the Input Data Register
TBD
TBD
ns
tIPRE2Q
Asynchronous Preset-to-Q of the Input Data Register
TBD
TBD
ns
tIREMCLR Asynchronous Clear Removal Time for the Input Data Register
TBD
TBD
ns
tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register
TBD
TBD
ns
tIREMPRE Asynchronous Preset Removal Time for the Input Data Register
TBD
TBD
ns
tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register
TBD
TBD
ns
tICLKQ
Description
tIWCLR
Asynchronous Clear Minimum Pulse Width for the Input Data
Register
TBD
TBD
ns
tIWPRE
Asynchronous Preset Minimum Pulse Width for the Input Data
Register
TBD
TBD
ns
tICKMPWH Clock Minimum Pulse Width High for the Input Data Register
TBD
TBD
ns
tICKMPWL Clock Minimum Pulse Width Low for the Input Data Register
TBD
TBD
ns
*For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-11 on page 2-14
for derating values.
Revision 0
2- 65
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Output/Enable Register
Table 2-74 • Output Data/Enable Register Propagation Delays
Worst Commercial-Case Conditions: TJ = 85°C, VDD = 1.14 V
Parameter
Measuring
Nodes
(from, to)*
Description
–1
Std.
Units
tOCLKQ
Clock-to-Q of the Output/Enable Register
TBD
TBD
ns
tOSUD
Data Setup Time for the Output/Enable Register
TBD
TBD
ns
tOHD
Data Hold Time for the Output/Enable Register
TBD
TBD
ns
tOSUE
Enable Setup Time for the Output/Enable Register
TBD
TBD
ns
tOHE
Enable Hold Time for the Output/Enable Register
TBD
TBD
ns
tOSUSL
Synchronous Load Setup Time for the Output/Enable
Register
TBD
TBD
ns
tOHSL
Synchronous Load Hold Time for the Output/Enable Register
TBD
TBD
ns
tOALn2Q
Asynchronous Clear-to-Q of the Output/Enable Register
(ADn = 1)
TBD
TBD
ns
Asynchronous Preset-to-Q of the Output/Enable Register
(ADn = 0)
TBD
TBD
ns
tOREMALn
Asynchronous Load Removal Time for the Output/Enable
Register
TBD
TBD
ns
tORECALn
Asynchronous Load Recovery Time for the Output/Enable
Register
TBD
TBD
ns
tOWALn
Asynchronous Load Minimum
Output/Enable Register
the
TBD
TBD
ns
tOCKMPWH Clock Minimum Pulse Width High for the Output/Enable
Register
TBD
TBD
ns
tOCKMPWL Clock Minimum Pulse Width Low for the Output/Enable
Register
TBD
TBD
ns
Pulse
Width
for
Note: *For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-11 on
page 2-14 for derating values.
2- 66
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
DDR Module Specification
Input DDR Module
D
EN
ALn
A
D
E
EN
F
ADn
G
SLn
SLE
SD
SD
LAT
LAT
CLK
QR
ALn
ADn
SLn
C
Q
B
CLK
D
ALn
ADn
Q
D
D
Q
EN
Latch
QF
ALn
ADn
SLn
CLK
SLE
SD
LAT
CLK
DDR_IN
Figure 2-2 •
Input DDR Module
Revision 0
2- 67
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Input DDR Timing Diagram
tDDRICKMPWL
tDDRICKMPWH
CLK
tDDRISUD
D
1
2
3
tDDRIHD
4
5
6
7
8
9
10
11
ADn
SD
tDDRISUSLn
SLn
tDDRIWAL
ALn
tDDRIRECAL
tDDRISUE
tDDRIHE
EN
tDDRIAL2Q1
tDDRICLKQ1
1
3
tDDRIAL2Q2
tDDRICLKQ2
QR
QF
Figure 2-3 •
2- 68
4
5
6
Input DDR Timing Diagram
R e visio n 0
7
8
tDDRIREMAL
tDDRIHSLn
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Timing Characteristics
Table 2-75 • Input DDR Propagation Delays
Parameter
Description
Measuring
Nodes
(from, to)
–1
Std.
Units
tDDRICLKQ1
Clock-to-Out Out_QR for Input DDR
B, C
0.178
0.209
ns
tDDRICLKQ2
Clock-to-Out Out_QF for Input DDR
B, D
0.175
0.205
ns
tDDRISUD
Data Setup for Input DDR
A, B
0.464
0.546
ns
tDDRIHD
Data Hold for Input DDR
A, B
0
0
ns
tDDRISUE
Enable Setup for Input DDR
E, B
TBD
TBD
ns
tDDRIHE
Enable Hold for Input DDR
E, B
0
0
ns
tDDRISUSLn
Synchronous Load Setup for Input DDR
G, B
0.577
0.679
ns
tDDRIHSLn
Synchronous Load Hold for Input DDR
G, B
0
0
ns
tDDRIAL2Q1
Asynchronous Load-to-Out QR for Input DDR
F, C
0.618
0.727
ns
tDDRIAL2Q2
Asynchronous Load-to-Out QF for Input DDR
F, D
0.569
0.67
ns
tDDRIREMAL
Asynchronous Load Removal time for Input DDR
F, B
0
0
ns
tDDRIRECAL
Asynchronous Load Recovery time for Input DDR
F, B
0.041
0.048
ns
tDDRIWAL
Asynchronous Load Minimum Pulse Width for Input DDR
F, F
0.32
0.376
ns
tDDRICKMPWH Clock Minimum Pulse Width High for Input DDR
B, B
0.08
0.094
ns
tDDRICKMPWL Clock Minimum Pulse Width Low for Input DDR
B, B
0.068
0.08
ns
Revision 0
2- 69
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Output DDR Module
A
DR
EN
ALn
D
B
C
ADn
D
SLn
SD
SD
LAT
LAT
CLK
DF
E
SLE
1
F
D
Q
ALn
ADn
SLn
SLE
SD
0
LAT
CLK
DDR_ OUT
2- 70
G
Q
CLK
EN
Figure 2-4 •
QR
ALn
ADn
SLn
Q
EN
Output DDR Module
R e visio n 0
QF
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
tDDROCKMPWL tDDROCKMPWH
tDDROSUE
Clk
tDDROHDE
tDDROSUDR
tDDROHDR
DR
2
1
3
4
tDDROSUDF
6
DF
7
5
tDDROHDF
8
9
10
11
ADn
SD
tDDROSUSLn
tDDROHDSLn
SLn
EN
tDDRORECAL
ALn
`
tDDROAL2Q
Out
Figure 2-5 •
tDDROREMAL
tDDROCLKQ
1
7
2
8
9
4
10
Output DDR Timing Diagram
Revision 0
2- 71
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Timing Characteristics
Table 2-76 • Output DDR Propagation Delays
Parameter
Description
Measuring
Nodes
(from, to)
–1
Std.
Units
tDDROCLKQ
Clock-to-Out of DDR for Output DDR
E, G
0.288
0.339
ns
tDDROSUDF
Data_F Data Setup for Output DDR
F, E
0.154
0.181
ns
tDDROSUDR
Data_R Data Setup for Output DDR
A, E
TBD
TBD
ns
tDDROHDF
Data_F Data Hold for Output DDR
F, E
0
0
ns
tDDROHDR
Data_R Data Hold for Output DDR
A, E
0
0
ns
tDDROSUE
Enable Setup for Input DDR
B, E
0.148
0.174
ns
tDDROHE
Enable Hold for Input DDR
B, E
0
0
ns
tDDROSUSLn
Synchronous Load Setup for Input DDR
D, E
0.79
0.93
ns
tDDROHSLn
Synchronous Load Hold for Input DDR
D, E
0
0
ns
tDDROAL2Q
Asynchronous Load-to-Out for Output DDR
C, G
0.575
0.677
ns
tDDROREMAL
Asynchronous Load Removal time for Output DDR
C, E
0
0
ns
tDDRORECAL
Asynchronous Load Recovery time for Output DDR
C, E
0.775
0.911
ns
tDDROWAL
Asynchronous Load Minimum Pulse Width for Output DDR
C, C
0.191
0.224
ns
tDDROCKMPWH Clock Minimum Pulse Width High for the Output DDR
E, E
0.101
0.119
ns
tDDROCKMPWL
E, E
0.156
0.184
ns
2- 72
Clock Minimum Pulse Width Low for the Output DDR
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Logic Module Specifications
4-input LUT (LUT-4)
The SmartFusion2 offers a fully permutable 4-input LUT. In this section, timing characteristics are
presented for a sample of the library.
tPD
A
PAD
B
PAD
ADN4 OR
Any
Combinational
Logic
C
PAD
Y
PAD
D/S (where
applicable)
PAD
VDD
A, B, C, D, S
50%
tPD = Max(tPD(RR), tPD(RF), tPD(FF), tPD(FR))
50%
where edges are applicable for the particular
combinatorial cell
GND
VDD
50%
50%
OUT
GND
VDD
tPD
tPD
(RR)
(FF)
tPD
OUT
tPD
50%
(RF)
Figure 2-6 •
(FR)
50%
GND
LUT-4
Timing Characteristics
Table 2-77 • Combinatorial Cell Propagation Delays
Combinatorial Cell
Equation
Parameter
–1
Std.
Units
INV
Y = !A
tPD
0.108
0.127
ns
AND2
Y=A·B
tPD
0.172
0.203
ns
NAND2
Y = !(A · B)
tPD
0.16
0.188
ns
OR2
Y=A+B
tPD
0.172
0.203
ns
NOR2
Y = !(A + B)
tPD
0.16
0.188
ns
XOR2
Y=A⊕B
tPD
0.172
0.203
ns
XOR3
Y=A⊕B⊕C
tPD
0.24
0.283
ns
AND3
Y=A·B·C
tPD
0.22
0.259
ns
AND4
Y=A·B·C·D
tPD
0.493
0.58
ns
Revision 0
Notes
2- 73
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Sequential Module
SmartFusion2 offers a separate flip flop which can be used independently from the LUT. The flip-flop can
be configured as a register or a latch and has a data input and optional enable, synchronous load (clear
or preset), and asynchronous load (clear or preset).
D
Q
EN
ALn
ADn
SLn
SLE
SD
LAT
CLK
Figure 2-7 •
Sequential Module
Figure 2-8 shows a configuration with SD = 1 (synchronous preset) and ADn = 1 (asynchronous clear)
for a flip-flop (LAT = 0).
tCKMPWH t
CKMPWL
50%
CLK
50%
50%
tSUD
D
1
SD
SD = 1
ADn
ADn = 1
E
SL
50%
50%
1
tHE
50%
ALn
50%
50%
50%
50%
tCLKQ
2- 74
Timing Diagram
R e visio n 0
tSUSL
tHSL
50%
50%
tRECALn
tALnQ2
Figure 2-8 •
50%
0
tWALn
Q
50%
tHD
0 50%
50%
tSUE
50%
tREMALn
50%
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Timing Characteristics
Table 2-78 • Register Delays
Parameter
Description
–1
Std.
Units
tCLKQ
Clock-to-Q of the Core Register
0.114
0.134
ns
tSUD
Data Setup Time for the Core Register
0.267
0.314
ns
tHD
Data Hold Time for the Core Register
0
0
ns
tSUE
Enable Setup Time for the Core Register
0.353
0.415
ns
tHE
Enable Hold Time for the Core Register
0
0
ns
tSUSL
Synchronous Load Setup Time for the Core Register
0.353
0.415
ns
tHSL
Synchronous Load Hold Time for the Core Register
0
0
ns
tALn2Q
Asynchronous Clear-to-Q of the Core Register (ADn = 1)
0.498
0.586
ns
Asynchronous Preset-to-Q of the Core Register (ADn = 0)
0.475
0.559
ns
tREMALn
Asynchronous Load Removal Time for the Core Register
0
0
ns
tRECALn
Asynchronous Load Recovery Time for the Core Register
0.371
0.437
ns
tWALn
Asynchronous Load Minimum Pulse Width for the Core
Register
0.32
0.376
ns
tCKMPWH
Clock Minimum Pulse Width High for the Core Register
0.079
0.093
ns
tCKMPWL
Clock Minimum Pulse Width Low for the Core Register
0.168
0.197
ns
Revision 0
Notes
2- 75
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Global Resource Characteristics
SmartFusion2 devices offer a powerful, low skew global routing network which provides an effective
clock distribution throughout the FPGA fabric. Refer to the SmartFusion2 FPGA Fabric Architecture
User’s Guide for the positions of various global routing resources.
Table 2-79 • M2S050T Global Resource
Speed Grade
–1
Parameter
Description
Std.
Min.
Max.
Min.
Max.
Units
tRCKL
Input Low Delay for Global Clock
TBD
TBD
TBD
TBD
ns
tRCKH
Input High Delay for Global Clock
TBD
TBD
TBD
TBD
ns
tRCKMPWH
Minimum Pulse Width High for Global Clock
TBD
TBD
TBD
TBD
ns
tRCKMPWL
Minimum Pulse Width Low for Global Clock
TBD
TBD
TBD
TBD
ns
tRCKSW
Maximum Skew for Global Clock
TBD
TBD
TBD
TBD
ns
2- 76
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
FPGA Fabric SRAM
Refer to the SmartFusion2 FPGA Fabric Architecture User’s Guide for more information.
FPGA Fabric Large SRAM (LSRAM)
Table 2-80 • RAM1K18
–1
Parameter
Description
Std.
Min.
Max.
Min.
Max. Units
tcy
Clock Period
1.656
–
1.948
–
ns
tclkmpwh
Clock Minimum Pulse Width High
0.828
–
0.974
–
ns
tclkmpwl
Clock Minimum pulse Width Low
0.327
–
0.384
–
ns
tplcy
Pipelined Clock Period
1.652
–
1.944
–
ns
tplclkmpwh Pipelined Clock Minimum Pulse Width High
0.826
–
0.972
–
ns
tplclkmpwl
Pipelined Clock Minimum pulse Width Low
0.324
–
0.381
–
ns
tclk2q
Read Access Time with Pipeline Register
–
0.337
–
0.396
ns
Read Access Time without Pipeline Register
–
TBD
–
TBD
ns
Access Time with Feed-Through Write Timing
–
TBD
–
TBD
ns
taddrsu
Address Setup Time
0.207
–
0.244
–
ns
taddrhd
Address Hold Time
0.041
–
0.048
–
ns
tdsu
Data Setup Time
0.33
–
0.389
–
ns
tdhd
Data Hold Time
0.074
–
0.087
–
ns
tblksu
Block Select Setup Time (With Pipe-Line Register Enabled)
0.188
–
0.221
–
ns
tblkhd
Block Select Hold Time (With Pipe-Lined Register Enabled)
0.079
–
0.093
–
ns
tblk2q
Block Select to Out Disable Time (when Pipe-Lined
Registered is Disabled)
–
TBD
–
TBD
ns
Block Select to Out Enable Time (when Pipe-Lined Registered
is Disabled)
–
TBD
–
TBD
ns
tblkmpw
Block Select Minimum Pulse Width
TBD
–
TBD
–
ns
trdesu
Read Enable Setup Time (A_WEN, B_WEN =0)
0.465
–
0.547
–
ns
trdehd
Read Enable Hold Time (A_WEN, B_WEN =0)
0.053
–
0.063
–
ns
trdplesu
Pipelined Read
B_DOUT_EN)
0.703
–
0.827
–
ns
trdplehd
Pipelined Read Enable Hold Time (A_DOUT_EN,
B_DOUT_EN)
–0.053
–
–0.062
–
ns
tr2q
Asynchronous Reset to Output Propagation Delay
-
0.792
–
0.931
ns
trstrem
Asynchronous Reset Removal Time
TBD
–
TBD
–
ns
trstrec
Asynchronous Reset Recovery Time
0.005
–
0.006
–
ns
trstmpw
Asynchronous Reset Minimum Pulse Width
0.323
–
0.38
–
ns
tplrstrem
Pipelined Register Asynchronous Reset Removal Time
TBD
–
TBD
–
ns
tplrstrec
Pipelined Register Asynchronous Reset Recovery Time
0.344
–
0.405
–
ns
tplrstmpw
Pipelined Register Asynchronous Reset Minimum Pulse Width
0.307
–
0.361
–
ns
tsrstsu
Synchronous Reset Setup Time
0.231
–
0.271
–
ns
Enable
Setup
Time
(A_DOUT_EN,
Revision 0
2- 77
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Table 2-80 • RAM1K18
–1
Parameter
Description
Std.
Min.
Max.
Min.
Max. Units
tsrsthd
Synchronous Reset Hold Time
TBD
–
TBD
–
ns
twesu
Write Enable Setup Time (A_WEN, B_WEN = 1)
0.403
–
0.474
–
ns
twehd
Write Enable Hold Time (A_WEN, B_WEN = 1)
0.061
–
0.072
–
ns
FPGA Fabric Micro SRAM (uSRAM)
Table 2-81 • uSRAM (RAM64x18) in 64x18 Mode
–1
Parameter
Description
Std.
Min.
Max.
Min.
Max. Units
tcy
Read Clock Period
0.65
–
0.766
–
ns
tclkmpwh
Read Clock Minimum Pulse Width High
0.296
–
0.348
–
ns
tclkmpwl
Read Clock Minimum pulse Width Low
0.325
–
0.383
–
ns
tplcy
Read Pipe-line clock period
0.622
–
0.732
–
ns
tplclkmpwh Read Pipe-line clock Minimum Pulse Width High
0.281
–
0.331
–
ns
tplclkmpwl
Read Pipe-line clock Minimum Pulse Width Low
0.311
–
0.366
–
ns
tclpl1
Minimum pipe-line clock low phase in order to prevent glitches
with Pipeline Register in Latch Mode
TBD
–
TBD
–
ns
tclk2q
Read Access Time with Pipeline Register
–
0.368
–
0.433
ns
Read Access Time with Pipeline Register in Latch Mode
–
TBD
–
TBD
ns
Read Access Time without Pipeline Register
–
1.777
–
2.09
ns
Read Address Setup Time in Synchronous Mode
0.172
–
0.202
–
ns
Read Address Setup Time in Asynchronous Mode
1.059
–
1.246
–
ns
Read Address Hold Time in Synchronous Mode
0.028
–
0.033
–
ns
Read Address Hold Time in Asynchronous Mode
0.008
–
0.01
–
ns
trdensu
Read Enable Setup Time
0.245
–
0.289
–
ns
trdenhd
Read Enable Hold Time
0.074
–
0.087
–
ns
tblksu
Read Block Select Setup Time (With Pipe-Line Register
Enabled)
0.301
–
0.355
–
ns
tblkhd
Read Block Select Hold Time (With Pipe-Lined Register
Enabled)
TBD
–
TBD
–
ns
tblk2q
Read Block Select to Out Disable Time (when Pipe-Lined
Registered is Disabled)
–
2.093
–
2.462
ns
Read Block Select to Out Enable Time (when Pipe-Lined
Registered is Disabled)
–
1.503
–
1.768
ns
TBD
–
TBD
–
ns
–0.002
–
–0.002
–
ns
0.03
–
0.036
–
ns
taddrsu
taddrhd
tblkmpw
Read Block Select Minimum Pulse Width
trstrem
Read Asynchronous Reset Removal Time (Pipelined Clock)
Read Asynchronous Reset Removal Time (Non-Pipelined
Clock)
2- 78
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-81 • uSRAM (RAM64x18) in 64x18 Mode (continued)
–1
Parameter
trstrec
tr2q
Description
Std.
Min.
Max.
Min.
Max. Units
Read Asynchronous Reset Recovery Time (Pipelined Clock)
0.546
–
0.642
–
ns
Read Asynchronous Reset Recovery Time (Non-Pipelined
Clock)
0.085
–
0.099
–
ns
Read Asynchronous Reset to Output Propagation Delay (With
Pipe-Line Register Enabled)
–
0.938
-
1.103
ns
Read Asynchronous Reset to Output Propagation Delay
(With Pipe-Line Register Disabled)
–
1.588
-
1.868
ns
tsrstsu
Read Synchronous Reset Setup Time
0.189
–
0.222
–
ns
tsrsthd
Read Synchronous Reset Hold Time
0.074
–
0.087
–
ns
tccy
Write Clock Period
1.012
–
1.192
–
ns
tcclkmpwh Write Clock Minimum Pulse Width High
0.506
–
0.596
–
ns
tcclkmpwl
Write Clock Minimum Pulse Width Low
0.297
–
0.349
–
ns
tblkcsu
Write Block Setup Time
0.332
–
0.39
–
ns
tblkchd
Write Block Hold Time
TBD
–
TBD
–
ns
tdincsu
Write Input Data setup Time
TBD
–
TBD
–
ns
tdinchd
Write Input Data hold Time
0.002
–
0.003
–
ns
taddrcsu
Write Address Setup Time
TBD
–
TBD
–
ns
taddrchd
Write Address Hold Time
TBD
–
TBD
–
ns
twecsu
Write Enable Setup Time
0.32
–
0.377
–
ns
twechd
Write Enable Hold Time
TBD
–
TBD
–
ns
Revision 0
2- 79
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
On-Chip Oscillators
Table 2-82 through Table 2-84 on page 2-81 describe the electrical characteristics of the available
on-chip oscillators in SmartFusion2 devices.
Table 2-82 • Electrical Characteristics of the Crystal Oscillator
Parameter
Description
FXTAL
Operating frequency
ACCXTAL
Accuracy
CYCXTAL
Output duty cycle
JITXTAL
Output jitter
Condition
Min.
Typ.
Max.
Units
–
32
–
kHz
TBD
TBD
TBD
%
TBD
TBD
TBD
%
Period jitter
TBD
TBD
TBD
ps RMS
Cycle-to-Cyle jitter
TBD
TBD
TBD
ps
Temperature: 0°C to 85°C
IDYNXTAL
Operating current
TBD
TBD
TBD
mA
ISTBXTAL
Standby current of crystal
oscillator
TBD
TBD
TBD
µA
PSRRXTAL Power supply noise
tolerance
TBD
TBD
TBD
Vp-p
ENXTAL
Enable Time
TBD
TBD
TBD
µs
VIHXTAL
Input logic level High
TBD
TBD
TBD
V
VILXTAL
Input logic level Low
TBD
TBD
TBD
V
SUXTAL
Startup time
TBD
TBD
TBD
µs
Min.
Typ.
Max.
Units
–
25/50
–
MHz
TBD
TBD
TBD
%
TBD
TBD
TBD
%
Period Jitter
TBD
TBD
TBD
ps RMS
Cycle-to-Cyle Jitter
TBD
TBD
TBD
ps
TBD
TBD
TBD
mA
of
TBD
TBD
TBD
µA
noise
TBD
TBD
TBD
Vp-p
Test load used:
Notes
Table 2-83 • Electrical Characteristics of the 25/50 MHz RC Oscillator
Parameter
Description
Condition
F25_50RC
Operating frequency
ACC25_50RC
Accuracy
CYC25_50RC
Output duty cycle
JIT25_50RC
Output jitter
Temperature: 0°C to 85°C
IDYN25_50RC
Operating current
ISTB25_50RC
Standby
current
crystal oscillator
PSRR25_50RC
Power supply
tolerance
VIH25_50RC
Input logic level High
TBD
TBD
TBD
V
VIL25_50RC
Input logic level Low
TBD
TBD
TBD
V
SU25_50RC
Startup time
TBD
TBD
TBD
µs
2- 80
Test load used:
R e visio n 0
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Table 2-84 • Electrical Characteristics of the 1 MHz RC Oscillator
Parameter
Description
F1RC
Operating frequency
ACC1RC
Accuracy
CYC1RC
Output duty cycle
JIT1RC
Output jitter
Condition
Min.
Typ.
Max.
Units
–
1
–
MHz
TBD
TBD
TBD
%
TBD
TBD
TBD
%
Period Jitter
TBD
TBD
TBD
ps RMS
Cycle-to-Cyle Jitter
TBD
TBD
TBD
ps
Temperature: 0°C to 85°C
IDYN1RC
Operating current
TBD
TBD
TBD
mA
ISTB1RC
Standby current of crystal
oscillator
TBD
TBD
TBD
µA
PSRR1RC
Power supply noise
tolerance
TBD
TBD
TBD
Vp-p
EN1RC
Enable Time
TBD
TBD
TBD
µs
VIH1RC
Input logic level High
TBD
TBD
TBD
V
VIL1RC
Input logic level Low
TBD
TBD
TBD
V
SU1RC
Startup time
TBD
TBD
TBD
µs
Test load used:
Revision 0
Notes
2- 81
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
Clock Conditioning Circuits (CCC)
Table 2-85 • SmartFusion2 CCC/PLL Specification
Parameter
Minimum
Typical
Maximum
Units
Clock Conditioning Circuitry Input Frequency fIN_CCC
1
200
MHz
Clock Conditioning Circuitry Output Frequency fOUT_CCC
20
400
MHz
Delay Increments in Programmable Delay Blocks
100
ps
Number of Programmable Values in Each Programmable
Delay Block
64
Acquisition Time
500
Tracking Jitter
TBD
Output Duty Cycle
48
Feedback Delay
CCC Output Peak-to-Peak Period
Jitter FCCC_OUT
µs
ns
52
%
8
ns
Maximum peak-to-peak period Jitter
SSO = 0
0 < SSO ≤ 2
SSO ≤ 4
SSO ≤ 8
SSO ≤ 16
FG896
FG896
FG896
FG896
FG896
20 MHz to 100 MHz
1
TBD
TBD
TBD
TBD
% fOUT_CCC
100 MHz to 200 MHz
1
TBD
TBD
TBD
TBD
% fOUT_CCC
200 MHz to 400 MHz
1
TBD
TBD
TBD
TBD
% fOUT_CCC
Modulation Frequency Range
25
35
50
kHz
Modulation Depth Range
0
1.5
%
Spread Spectrum Characteristics
Modulation Depth Control
2- 82
0.5
R e visio n 0
%
Notes
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Serial Peripheral Interface (SPI) Characteristics
This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output
characteristics given for a 35 pF load on the pins and all sequential timing characteristics are related to
SPI_x_CLK. For timing parameter definitions, refer to Figure 2-9 on page 2-84.
Table 2-86 • SPI Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade
Symbol
M2S050T
Unit
SPI_x_CLK = PCLK/2
–
ns
SPI_x_CLK = PCLK/4
TBD
ns
SPI_x_CLK = PCLK/8
TBD
ns
SPI_x_CLK = PCLK/16
TBD
µs
SPI_x_CLK = PCLK/32
TBD
µs
SPI_x_CLK = PCLK/64
TBD
µs
SPI_x_CLK = PCLK/128
TBD
µs
SPI_x_CLK = PCLK/256
TBD
µs
SPI_x_CLK = PCLK/2
–
ns
SPI_x_CLK = PCLK/4
TBD
ns
SPI_x_CLK = PCLK/8
TBD
ns
SPI_x_CLK = PCLK/16
TBD
µs
SPI_x_CLK = PCLK/32
TBD
µs
SPI_x_CLK = PCLK/64
TBD
µs
SPI_x_CLK = PCLK/128
TBD
µs
SPI_x_CLK = PCLK/256
TBD
us
SPI_x_CLK = PCLK/2
–
ns
SPI_x_CLK = PCLK/4
TBD
ns
SPI_x_CLK = PCLK/8
TBD
ns
SPI_x_CLK = PCLK/16
TBD
µs
SPI_x_CLK = PCLK/32
TBD
µs
SPI_x_CLK = PCLK/64
TBD
µs
SPI_x_CLK = PCLK/128
TBD
µs
SPI_x_CLK = PCLK/256
TBD
µs
sp4
SPI_x_CLK, SPI_x_DO, SPI_x_SS rise time (10%-90%)
TBD
ns
sp5
SPI_x_CLK, SPI_x_DO, SPI_x_SS fall time (10%-90%)
TBD
ns
sp6
Data from master (SPI_x_DO) setup time
TBD
pclk cycles
sp7
Data from master (SPI_x_DO) hold time
TBD
pclk cycles
sp8
SPI_x_DI setup time
TBD
pclk cycles
sp9
SPI_x_DI hold time
TBD
pclk cycles
sp1
sp2
sp3
Description and Condition
SPI_x_CLK minimum period
SPI_x_CLK minimum pulse width high
SPI_x_CLK minimum pulse width low
Revision 0
2- 83
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
SP1
SP4
SP2
50% 50%
SPI_x_CLK
SPO = 0
SP5
SP3
90%
50%
10%
10%
SPI_x_CLK
SPO = 1
90%
90%
SPI_x_SS
10%
1 0%
SP4
SP5
SP6
SPI_x_DO
5 0%
Figure 2-9 •
2- 84
MSB
90%
9 0%
5 0%
10%
SP8
SPI_x_DI
SP7
50%
SP9
MSB
SP5
10%
SP4
50%
SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1)
R e visio n 0
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 System-on-Chip FPGAs
Inter-Integrated Circuit (I2C) Characteristics
This section describes the DC and switching of the I2C interface. Unless otherwise noted, all output
characteristics given are for a 100 pF load on the pins. For timing parameter definitions, refer to Figure 210 on page 2-86.
Table 2-87 • I2C Characteristics
Commercial Case Conditions: TJ = 85ºC, VDD = 1.14 V, –1 Speed Grade
Parameter
Condition
Value
Unit
Minimum input low voltage
–
See Table 2-18 on
page 2-22
–
Maximum input low voltage
–
See Table 2-18
–
Minimum input high voltage
–
See Table 2-18
–
Maximum input high voltage
–
See Table 2-18
–
VOL
Maximum output voltage low
IOL = TBD
See Table 2-18
–
IIL
Input current high
–
See Table 2-18
–
IIH
Input current low
–
See Table 2-18
–
Vhyst
Hysteresis of Schmitt trigger
inputs
–
See Table 2-17 on
page 2-21
V
TFALL
Fall time
VIHmin to VILMax, Cload = 400 pF
TBD
ns
VIHmin to VILMax, Cload = 100 pF
TBD
ns
VILMax to VIHmin, Cload = 400 pF
TBD
ns
VILMax to VIHmin, Cload = 100 pF
TBD
ns
VIN = 0, f = 1.0 MHz
TBD
pF
VIL
VIH
TRISE
Definition
Rise time
Cin
Pin capacitance
Rpull-up
Output buffer maximum pulldown Resistance
–
TBD
Ω
Rpull-down
Output buffer maximum pull-up
Resistance
–
TBD
Ω
Dmax
Maximum data rate
Fast mode
TBD
Kbps
tLOW
Low period of I2C_x_SCL
–
TBD
pclk cycles
tHIGH
High period of I2C_x_SCL
–
TBD
pclk cycles
tHD;STA
START hold time
–
TBD
pclk cycles
tSU;STA
START setup time
–
TBD
pclk cycles
tHD;DAT
DATA hold time
–
TBD
pclk cycles
tSU;DAT
DATA setup time
–
TBD
pclk cycles
tSU;STO
STOP setup time
–
TBD
pclk cycles
tFILT
Maximum spike width filtered
–
TBD
ns
Revision 0
2- 85
ADVANCE INFORMATION (Subject to Change)
SmartFusion2 DC and Switching Characteristics
SDA
TRISE
SCL
tLOW
tSU;STA
S
tHD;STA
TFALL
tHIGH
tHD;DAT
tSU;STO
tSU;DAT
P
Figure 2-10 • I2C Timing Parameter Definition
2- 86
R e visio n 0
3 – SmartFusion2 Development Tools
System designers can leverage the newly released, easy-to-use Libero® system-on-chip (SoC) software
toolset for designing SmartFusion2 devices. Libero SoC highlights include the following:
•
System Builder for creation of system level architecture
•
Synthesis, debug and DSP support from Synopsys
•
Simulation from Mentor Graphics
•
Push-button design flow with power analysis and timing analysis
•
SmartDebug for access to non-invasive probes within SmartFusion2 devices
•
Integrated firmware flows for GNU, IAR, and Keil
•
Operating system support includes uClinux from Emcraft Systems, FreeRTOS,™ SAFERTOS,®
and uc/OS-III™ from Micrium.
Figure 3-1 •
Tool Flow
Libero SoC
Libero SoC and Libero Integrated Design Environment (IDE) are comprehensive software toolsets for
designing with Microsemi FPGAs. Different versions of Libero support different families.
•
Libero SoC v11.0 Beta software release supports only the recently announced SmartFusion2 SoC
FPGAs. This version includes a new System Builder design approach, specifically targeted for
SmartFusion2 devices. A production version of this software will be available in April 2013, when
it will integrate support for the other production flash families currently supported by Libero v10.1.
•
Libero SoC v10.1 software release for designing with Microsemi's SmartFusion, IGLOO,®
ProASIC®3, and Fusion® families, managing the entire design flow from design entry, synthesis
and simulation, through place-and-route, timing and power analysis, with enhanced integration of
the embedded design flow.
•
Libero IDE software release for designing with Microsemi antifuse and legacy flash FPGAs and
managing the entire design flow from design entry, synthesis and simulation, through place-androute, timing and power analysis (refer to PCN 1108).
Libero SoC introduces a new SoC design flow, specifically targeted to simplify the design of our newest
flash FPGAs. Standalone tools such as Silicon Sculptor, FlashPro, Identify ME, and Synphony Model
Compiler ME are not changing and will continue to include support for all silicon devices.
Current licenses are valid for both SoC and IDE releases; a new license is not required for Libero SoC.
Revision 0
3 -1
SmartFusion2 Development Tools
From design, synthesis and simulation, through floorplanning, place-and-route, timing constraints and
analysis, power analysis, and program file generation, Libero manages the entire design flow quickly and
efficiently. SmartDesign provides an efficient methodology for creating complete simple and complex
embedded processor-based system-on-chip (SoC) designs with ease.
The SoC design flow provides the designer the choice of using the powerful microprocessor subsystem
(MSS) standalone or creating a more complex system by utilizing available programmable gates in the
FPGA fabric. Libero enables the designer to configure the hardwired Cortex-M3 processor, analog
(SmartFusion only), and peripherals within MSS, plus extend additional logic functionality into the FPGA
fabric, thus taking full advantage of the specific SoC FPGA device resources.
Libero provides full power optimization and analysis tools for Microsemi's low-power flash FPGA families.
Libero Software Features
Libero software offers the latest and best-in-class FPGA development tools from leading EDA vendors
such as Mentor Graphics and Synopsys. These tools, combined with tools developed by Microsemi,
allow you to quickly and easily manage your Microsemi FPGA designs. An intuitive user interface and
powerful design manager guide you through the process while organizing design files and seamlessly
managing exchanges between the various tools.
•
Powerful project and design flow management
•
Full suite of integrated design entry tools and methodologies:
–
SmartDesign graphical SoC design creation with automatic abstraction to HDL
–
Core Catalog and configuration
–
Fabric utilization for SmartFusion2 designs
–
HDL and HDL templates
–
User-defined block creation flow for design re-use
–
Microsemi cell libraries
•
Synplify Pro® ME synthesis fully optimizes Microsemi FPGA device performance and area
utilization
•
Synphony Model Compiler ME performs high-level synthesis optimizations within a Simulink®
environment
•
ModelSim® ME VHDL or Verilog behavioral, post-synthesis and post-layout simulation capability
•
Designer physical design implementation, floorplanning, physical constraints, and layout
•
Timing-driven and power-driven place-and-route
•
SmartTime environment for timing constraint management and analysis
•
SmartPower provides comprehensive power analysis for actual and "what if" power scenarios
•
Interface to FlashPro programmers
•
Post-route probe insertion and Identify® AE debugging software for Microsemi flash designs
•
Supported on Microsoft® Windows® and RedHat Linux operating systems
System Builder
System builder (Figure 3-2 on page 3-3) is a new graphical design wizard designed specifically for
SmartFusion2 based designs. System builder walks the user through the following steps:
3-2
•
Asks the user basic questions on system architecture
•
Adds any additional peripherals in the fabric
•
Walks through configuration options for each selected feature
•
Builds complete base system and API – correct by design
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
Figure 3-2 •
System Builder
SmartDebug
SmartDebug is a new debug tool added in Libero SoC v11.0 software that supports probe capabilities in
the SmartFusion2 architecture and also supports device debug features for memory. SmartFusion2
devices have built-in probe points that greatly enhance the ability to debug logic elements within the
device. The enhanced debug features implemented in SmartFusion2 devices give access to any logic
element and enable designers to check the state of inputs and outputs in real time. Live Probe and Active
Probe are only available on the SmartFusion2 family of products.
•
With Live Probe, two dedicated probes can be configured to observe a Probe Point which is any
input or output of a logic element. The probe data can then be sent to an oscilloscope or even
redirected back to the FPGA fabric to drive a software logic analyzer.
•
Active Probe allows dynamic asynchronous read and write to a flip-flop or probe point. This
enables a user to quickly observe the output of the logic internally or to quickly experiment on how
the logic will be affected by writing to a probe point.
•
Memory debug gives the ability to perform dynamic asynchronous reads and writes to a micro
SRAM or large SRAM block so the user can quickly verify if the content of the memory is
changing as expected.
SmartDebug features can be accessed from within the Libero design flow or FlashPro software.
Revision 0
3 -3
SmartFusion2 Development Tools
SoftConsole
Microsemi's Embedded Software Development Environment
SoftConsole is Microsemi's free software development environment that enables the rapid production of
C and C++ executables for Microsemi FPGAs using Cortex-M3, Cortex-M1, and Core8051s. Libero SoC
automatically generates SoftConsole projects and firmware for SoC FPGA designs. SoftConsole
includes a fully integrated debugger that offers easy access to memory contents, registers, and singleinstruction execution.
Product Features
SoftConsole (Figure 3-3 on page 3-5) provides a flexible and easy-to-use graphical user interface for
managing your embedded software development projects. You can quickly develop and debug software
programs and implement them in Microsemi FPGAs. SoftConsole enables you to configure project
settings, edit and debug software programs, and organize your files. With this tool you have
simultaneous access to multiple tool windows and the ability to quickly switch editing and debug views.
•
Available for free download
•
Eclipse-based IDE
•
GNU C/C++ compiler (Cortex-M3 and Cortex-M1)
•
SDCC compiler (Core8051s)
•
GDB debugger
•
FlashPro4/3/3X compatible debug sprite
•
Seamless access to and debug of flash memory (SmartFusion2 eNVM, Fusion NVM, external
flash)
•
Simultaneous access to multiple tool windows
•
Fast switch between C/C++ and debug
•
One or more perspectives in a workbench window
•
Perspectives can be customized by the user
•
Provides a direct interface to:
•
3-4
–
SmartFusion2 microcontroller subsystem (MSS) for SmartFusion2 designs
–
Firmware Catalog, which includes CMSIS-PAL for Cortex-M3, HALs for Cortex-M1 and 8051s,
driver firmware packages, sample programs, and linker scripts
Compatible with Libero SoC and IDE design flows
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
SoftConsole User Interface
Figure 3-3 •
SoftConsole User Interface
Revision 0
3 -5
SmartFusion2 Development Tools
Firmware Catalog
The Firmware Catalog is a standalone executable program that supports Microsemi SoftConsole, Keil™,
and IAR Systems® embedded processor development toolchains targeting the ARM Cortex-M3,
Cortex-M1, and Core8051s processors. The Firmware Catalog streamlines locating and generating
firmware that is compatible with Intellectual Property (IP) cores used in Microsemi FPGA designs.
Firmware can also be delivered through SmartDesign within the Libero environment.
Software Drivers
Microsemi has a broad offering of proven and pre-implemented synthesizable IP building blocks that can
be easily configured and used within Microsemi FPGA system-level designs. Software drivers for many
Microsemi IP cores are available within the Firmware Catalog. The drivers are free of charge and
delivered as C source, so they can be easily compiled and linked into a user's program or executable.
These drivers hide the implementation details of peripheral operations behind a driver application
program interface (API), so the developer need only be concerned with the peripheral's function.
Hardware Abstraction Layers
A hardware abstraction layer (HAL) that supports ARM Cortex-M3, Cortex-M1 and Core8051s
processors is also available. HALs enable the software driver to be used without modification, isolating
the driver's implementation from the hardware platform variations. A driver implementation interacts with
the hardware peripheral it is controlling. This enables programmers to seamlessly reuse code, even
when the hardware platform changes.
Web Repositories
(Microsemi, Other)
Access Repositories
Download
Browse for Firmware
Firmware Catalog
SoftConsole
Generate Core
Vault
(Local or Remote)
Load Program
Figure 3-4 •
Hardware Abstraction Layer
The Firmware Catalog notifies the user if new firmware cores or firmware updates are available from
Microsemi's web repository. The updates can be downloaded into a local vault on a PC. A vault is a local
directory (either local to a machine or on the local network) that contains cores downloaded from one or
more repositories. The repository is a location on the web that contains firmware cores ready to be used
directly in any toolchain software.
3-6
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
After selecting IPs to use in the Microsemi FPGA design, the associated firmware can be selected in the
Firmware Catalog and the IP cores can be generated. The IP cores are then loaded into the code via
SoftConsole, Keil, or IAR Systems software development environments.
For the SoC design flow, the designer does not need to determine which firmware must be selected and
generated. Although the designer can browse the complete listing of firmware in the Firmware Catalog,
the SmartDesign flow for SmartFusion2 and SmartFusion searches the design for instantiated IP and
automatically presents the appropriate firmware.
Firmware Catalog User Interface
Figure 3-5 •
Firmware Catalog User Interface
The Firmware Catalog is configured within SoftConsole so that it is integrated in the toolchain, which
allows seamless location, configuration, and addition of firmware to the user's SoftConsole project.
Revision 0
3 -7
SmartFusion2 Development Tools
SoC FPGA Ecosystem
Microsemi has a long history of supplying comprehensive FPGA development tools and recognizes the
benefit of partnering with industry leaders to deliver the optimum usability and productivity to customers.
Taking the same approach with processor development, Microsemi has partnered with key industry
leaders in the microcontroller space to provide the robust SoC FPGA ecosystem.
Microsemi is partnering with Keil and IAR to provide Software IDE support to system designers. The
result is a robust solution that can be easily adopted by developers who are already doing embedded
design. The learning path is straightforward for FPGA designers.
Figure 3-6 shows a software stack with examples of drivers, RTOS and middleware from Microsemi and
partners. By leveraging the software stack, designers can decide at which level to add their own
customization to their design, thus speeding time to market and reducing overhead in the design.
Application
Layer
Customer Secret Sauce
Middleware
TCP/IP, HTTP, SMTP, DHCP, LCD
Hardware
Abstraction
Layer
Hardware
Platform
Figure 3-6 •
3-8
Microsemi CMSIS-based HAL
Microsemi SmartFusion2
Software Stack
R e vi s i o n 0
eNVM
Timer
Ethernet
...
USB
CAN
UART
I2C
Drivers
SPI
μC/OS-III, RTX, uClinux, FreeRTOS
OS/RTOS
SmartFusion2 System-on-Chip FPGAs
ARM
Because an ARM processor was chosen for SmartFusion2 and SmartFusion devices, Microsemi's
customers can benefit from the extensive ARM ecosystem. By building on Microsemi supplied hardware
abstraction layer (HAL) and drivers, third party vendors can easily port RTOS and middleware for the
SmartFusion devices.
•
ARM Cortex-M Series Processors
•
ARM Cortex-M3 Processor Resources
•
ARM Cortex-M3 Technical Reference Manual
•
ARM Cortex-M3 Processor Software Development for ARM7TDMI Processor Programmers
White Paper
Compile and Debug
SoftConsole
Keil MDK
IAR Embedded Workbench®
www.microsemi.com/soc
www.keil.com
www.iar.com
Free with Libero SoC
32 K code limited
32 K code limited
N/A
Full version
Full version
Compiler
GNU GCC
RealView C/C++
IAR ARM Compiler
Debugger
GDB debug
Vision Debugger
C-SPY® Debugger
No
Vision Simulator
Yes
FlashPro4
ULINK2® or ULINK-ME
J-LINK™ or J-LINK Lite
Software IDE
Website
Free versions from SoC
Products Group
Available from Vendor
Instruction Set Simulator
Debug Hardware
Microsemi's SoftConsole is a free Eclipse-based IDE that enables the rapid production of C and C++
executables for Microsemi FPGAs and cSoCs using Cortex-M3, Cortex-M1, and Core8051s. For
SmartFusion support, SoftConsole includes the GNU C/C++ compiler and GDB debugger. Additional
examples can be found on the SoftConsole page.
Using UART with SmartFusion cSoC: SoftConsole Standalone Flow Tutorial
Displaying POT Level with LEDs: Libero SoC and SoftConsole Flow Tutorial for a SmartFusion cSoC
IAR Embedded Workbench® for ARM/Cortex is an integrated development environment for building and
debugging embedded ARM applications using assembler, C and C++. It includes a project manager,
editor, build and debugger tools with support for RTOS-aware debugging on hardware or in a simulator.
•
Designing SmartFusion with IAR Systems
•
IAR Embedded Workbench for ARM
Keil's Microcontroller Development Kit comes in two editions: MDK-ARM and MDK Basic. Both editions
feature µVision®, the ARM Compiler, MicroLib, and RTX, but the MDK Basic edition is limited to 256K so
that small applications are more affordable.
•
Designing SmartFusion with Keil
•
Using Keil µVision and Microsemi SmartFusion
•
Keil Microcontroller Development Kit for ARM Product Manuals
•
Download Evaluation version of Keil MDK-ARM
Revision 0
3 -9
SmartFusion2 Development Tools
Operating Systems
FreeRTOS™ is a portable, open source, royalty free, mini real-time kernel (a free-to-download and freeto-deploy RTOS that can be used in commercial applications without any requirement to expose your
proprietary source code). FreeRTOS is scalable and designed specifically for small embedded systems.
This FreeRTOS version ported by Microsemi is 6.0.1. For more information, visit the FreeRTOS website:
www.freertos.org
•
SmartFusion Webserver Demo Using uIP and FreeRTOS
•
SmartFusion: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note
Emcraft Systems provides porting of the open-source U-boot firmware and uClinux™ kernel to
SmartFusion, a Linux-based cross-development framework, and other complementary components.
Combined with the release of its A2F-Linux Evaluation Kit, this provides a low-cost platform for
evaluation and development of Linux (uClinux) on the Cortex-M3 CPU core of Microsemi SmartFusion2
devices.
•
Emcraft Linux on Microsemi's SmartFusion
Keil offers the RTX Real-Time Kernel as a royalty-free, deterministic RTOS designed for ARM and
Cortex-M devices. It allows you to create programs that simultaneously perform multiple functions and
helps to create applications which are better structured and more easily maintained.
•
The RTX Real-Time Kernel is included with MDK-ARM. Download the Evaluation version of Keil
MDK-AR.
•
RTX source code is available as part of Keil/ARM Real-Time Library (RL-ARM), a group of tightlycoupled libraries designed to solve the real-time and communication challenges of embedded
systems based on ARM-powered microcontroller devices. The RL-ARM library now supports
SmartFusion devices and designers with additional key features listed in the "Middleware" section
on page 3-11.
Micrium supports SmartFusion with the company's flagship µC/OS family, recognized for a variety of
features and benefits, including unparalleled reliability, performance, dependability, impeccable source
code and vast documentation. Micrium supports the following products for SmartFusion devices and
continues to work with Microsemi on additional projects.
•
µC/OS-III, Micrium's newest RTOS, is designed to save time on your next embedded project and
puts greater control of the software in your hands.
•
SmartFusion Quickstart Guide for Micrium µC/OS-III Examples
RoweBots provides an ultra tiny Linux-compatible RTOS called Unison for SmartFusion. Unison consists
of a set of modular software components, which, like Linux, are either free or commercially licensed.
Unison offers POSIX® and Linux compatibility with hard real-time performance, complete I/O modules
and an easily understood environment for device driver programming. Seamless integration with FPGA
and analog features are fast and easy.
3- 10
•
Unison V4-based products include a free Unison V4 Linux and POSIX-compatible kernel with
serial I/O, file system, six demonstration programs, upgraded documentation and source code for
Unison V4, and free (for non-commercial use) Unison V4 TCP/IP server. Commercial license
upgrade is available for Unison V4 TCP/IP server with three demonstration programs, DHCP
client and source code.
•
Unison V5-based products include commercial Unison V5 Linux- and POSIX-compatible kernel
with serial I/O, file system, extensive feature set, full documentation, source code and more than
20 demonstration programs, Unison V5 TCP/IPv4 with extended feature set, sockets interface,
multiple network interfaces, PPP support, DHCP client, documentation, source code and six
demonstration programs, and multiple other features.
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
Middleware
Microsemi has ported both uIP and IwIP for Ethernet support as well as including TFTP file service.
•
SmartFusion Webserver Demo Using uIP and FreeRTOS
•
SmartFusion: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note
The Keil/ARM Real-Time Library (RL-ARM)* in addition to RTX source includes:
•
RL-TCPnet (TCP/IP) – The Keil RL-TCPnet library, supporting full TCP/IP and UDP protocols, is a
full networking suite specifically written for small ARM and Cortex-M processor-based
microcontrollers. TCPnet is now ported to and supports SmartFusion Cortex-M3. It is highly
optimized, has a small code footprint, and gives excellent performance, providing a wide range of
application level protocols and examples such as FTP, SNMP, SOAP, and AJAX. An HTTP server
example of TCPnet working in a SmartFusion design is available.
•
The Flash File System (RL-Flash) allows your embedded applications to create, save, read, and
modify files in standard storage devices such as ROM, RAM, or FlashROM, using a standard
serial peripheral interface (SPI). Many ARM-based microcontrollers have a practical requirement
for a standard file system. With RL-FlashFS you can implement new features in embedded
applications such as data logging, storing program state during standby modes, or storing
firmware upgrades.
Note: * The CAN and USB functions within RL-ARM are not supported for SmartFusion.
Micrium in addition to their µC/OS-III offers the following support for SmartFusion:
•
µC/TCP-IP™ is a compact, reliable and high-performance stack built from the ground up by
Micrium and has the quality, scalability and reliability that translates into a rapid configuration of
network options, remarkable ease-of-use and rapid time-to-market.
•
µC/Probe™ is one of the most useful tools in embedded systems design and puts you in the
driver's seat, allowing you to take charge of virtually any variable, memory location, and I/O port in
your embedded product, while your system is running.
Revision 0
3- 11
SmartFusion2 Development Tools
SmartFusion2 Development Kit
The SmartFusion2 Development Kit allows access to the peripherals of the SmartFusion2 SoC FPGA.
This board is designed to support full application development and prototyping. The kit will also serve as
a motherboard for several application-specific daughtercards that will be rolled over the next year.
•
Motor control interface card supports up to 6 motor daughtercards
•
System Management daughtercard
•
Aviation daughtercard
Figure 3-7 •
SmartFusion2 Development Kit
Figure 3-8 •
SmartFusion2 Applications
3- 12
R e visio n 0
4 – Pin Descriptions
SmartFusion2 devices support multi-standard I/Os (MSIO), microcontroller serial interfaces, high speed
serial interfaces, and a debugging JTAG interface. SmartFusion2 devices require all the power supplies
listed in Table 4-1.
Supply Pins
Table 4-1 • Supply Pins
Name
Type
Description
VSS
Ground
Ground pad for core and I/Os
PLL0_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL0. If unused, it must be grounded.
PLL0_VDDA
Supply
Analog power pad for PLL0
PLL1_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL1. If unused, it must be grounded.
PLL1_VDDA
Supply
Analog power pad for PLL1
PLL2_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL2. If unused, it must be grounded.
PLL2_VDDA
Supply
Analog power pad for PLL2
PLL3_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL3. If unused, it must be grounded.
PLL3_VDDA
Supply
Analog power pad for PLL3
PLL4_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL4. If unused, it must be grounded.
PLL4_VDDA
Supply
Analog power pad for PLL4
PLL5_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL5. If unused, it must be grounded.
PLL5_VDDA
Supply
Analog power pad for PLL5
PLL_PCIE_0_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL PCIe0. If unused, it must be grounded.
PLL_PCIE_0_VDDA
Supply
High supply voltage for PLL PCIe0. If unused,
should be connected to +3.3 V.
PLL_PCIE_1_VSSA
Ground
VDDA to on-die VSSA high pass filter connection
for PLL PCIe1. If unused, it must be grounded
PLL_PCIE_1_VDDA
Supply
High supply voltage for PLL PCIe1. If unused,
should be connected to +3.3 V.
Min. (V)
Max. (V)
2.5
3.3
2.5
3.3
2.5
3.3
2.5
3.3
2.5
3.3
2.5
3.3
2.5
3.3
2.5
3.3
Notes:
1. PCIe0 for SERDESIF_0 and PCIe1 for SERDESIF_1
2. VREF is not used in differential mode.
3. The M2S050T device has two SERDESIFs (SERDESIF_0, SERDESIF_1), which reside on 2 I/O banks (bank 6 and
bank 9) out of a total of 10 I/O banks.
Revision 0
4 -1
Pin Descriptions
Table 4-1 • Supply Pins (continued)
Name
Type
Description
Min. (V)
Max. (V)
PCIE0VDD
Supply
PCIe/PCS supply. If unused, should be connected
to +1.2 V.
1
1.2
PCIE0VDDIOL1
Supply
Tx/Rx analog I/O voltage. Low voltage power for
PCIe0 for lane0 and lane1 of SERDESIF_0, located
on the left side. If unused, should be connected to
+1.2 V.
1.2
1.2
PCIE0VDDIOR1
Supply
Tx/Rx analog I/O voltage. Low voltage power for
PCIe0 for lane2 and lane3 of SERDESIF_0, located
on the right side. If unused, should be connected to
+1.2 V.
1.2
1.2
2.5
2.5
PCIE0PLLREFRETL1
PCIE0VDDPLLL1
Local
on-chip
ground
return
path
for
PCIE0VDDPLLL for lane0 and lane1 of
SERDESIF_0, located on the left side. DO NOT
short to GND on the package or PCB. For details,
refer to the "High speed board design guidelines”SERDES I/Os section. If unused, it can be left
floating.
Supply
PCIE0PLLREFRETR1
Analog power for SERDES PLL of PCIe0 lanes
0&1. If unused, should be connected to +2.5 V
Local
on-chip
ground
return
path
for
PCIE0VDDPLLR for lanes 2 and 3 of SERDESIF_0
that is located on right side. DO NOT short to GND
on the package or PCB. If unused, it can be left
floating.
PCIE0VDDPLLR1
Supply
Analog power for SERDES PLL of PCIe0 lane2 and
lane3. If unused, should be connected to +2.5 V.
2.5
2.5
PCIE1VDD
Supply
PCIe/PCS supply. If unused, should be connected
to +1.2 V.
1
1.2
PCIE1VDDIOL1
Supply
Tx/Rx analog I/O voltage. Low voltage power for
PCIe1 for lane0 and lane1 of SERDESIF_1, located
on the left side. If unused, should be connected
to+1.2 V.
1.2
1.2
PCIE1VDDIOR1
Supply
Tx/Rx analog I/O voltage. Low voltage power for
PCIe1 for lane2 and lane3 of SERDESIF_1, located
on the right side. If unused, should be connected to
+1.2 V.
1.2
1.2
2.5
2.5
PCIE1PLLREFRETL1
PCIE1VDDPLLL1
Local
on-chip
ground
return
path
for
PCIE1VDDPLLL for lane0 and lane1 of
SERDESIF_1, located on left side. DO NOT short
to GND on the package or PCB. If unused, it can be
left floating.
Supply
Analog power for SERDES PLL of PCIe1 lane0 and
lane1. If unused, connect to +2.5 V.
Notes:
1. PCIe0 for SERDESIF_0 and PCIe1 for SERDESIF_1
2. VREF is not used in differential mode.
3. The M2S050T device has two SERDESIFs (SERDESIF_0, SERDESIF_1), which reside on 2 I/O banks (bank 6 and
bank 9) out of a total of 10 I/O banks.
4-2
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
Table 4-1 • Supply Pins (continued)
Name
Type
PCIE1PLLREFRETR
1
Description
Min. (V)
Max. (V)
2.5
2.5
2.5
3.3
2.5
3.3
Local
on-chip
ground
return
path
for
PCIE1VDDPLLR for lane2 and lane3 of
SERDESIF_1, located on right side. DO NOT short
to GND on the package or PCB. If unused, it can be
left floating.
PCIE1VDDPLLR1
Supply
Analog power for SERDES PLL of PCIe1 lane2 and
lane3. If unused, should be connected to +2.5 V.
PLL_MDDR_VSSA
Ground
Analog ground pad for PLL MDDR
PLL_MDDR_VDDA
Supply
Analog power pad for PLL MDDR
PLL_FDDR_VSSA
Ground
Analog ground pad for PLL of FDDR
PLL_FDDR_VDDA
Supply
Analog power pad for PLL of FDDR
VREF02
Supply
Reference voltage for FDDR (bank 0)
0.50 * VDDI0 0.50 * VDDI0
2
Supply
Reference voltage for MDDR (bank 5)
0.50 * VDDI5 0.50 * VDDI5
VSSNVM
Ground
eNVM ground
VPPNVM
Supply
eNVM power pad
2.5
3.3
VDDI0
Supply
VDDI port 0, bank 0 power
1.2
2.5
VDDI1
Supply
VDDI port 1, bank 1 power
1.2
3.3
VDDI2
Supply
VDDI port 2, bank 2 power
1.2
3.3
VDDI3
Supply
VDDI port 3, bank 3 power
1.2
3.3
VDDI4
Supply
VDDI port 4, bank 4 power
1.2
3.3
VDDI5
Supply
VDDI port 5, bank 5 power
1.2
2.5
VDDI6
Supply
VDDI port 6, bank 6 power
1.2
2.5
VDDI7
Supply
VDDI port 7, bank 7 power
1.2
2.5
VDDI8
Supply
VDDI port 8, bank 8 power
1.2
3.3
VDDI9
Supply
VDDI port 9, bank 9 power
1.2
2.5
VDD
Supply
Low voltage supply port
1
1.2
VPP
Supply
Power for charge pumps
2.5
3.3
VREF5
Notes:
1. PCIe0 for SERDESIF_0 and PCIe1 for SERDESIF_1
2. VREF is not used in differential mode.
3. The M2S050T device has two SERDESIFs (SERDESIF_0, SERDESIF_1), which reside on 2 I/O banks (bank 6 and
bank 9) out of a total of 10 I/O banks.
Revision 0
4 -3
Pin Descriptions
Dedicated Global I/O Naming Conventions
Dedicated global I/Os are dual-use I/Os which can drive the global blocks either directly or through clock
conditioning circuits (CCC) or virtual clock conditioning circuits (VCCC). They can also be used as
regular I/Os. These global I/Os are the primary source for bringing in the external clock inputs into the
SmartFusion2 device. In the M2S050T device, there are 16 global blocks located in the center of the
fabric and 32 global I/Os located 8 each on the north, east, south, and west sides of the fabric. There are
6 CCC blocks, located 2 each on northwest, northeast, and southwest side of the fabric and 2 VCCC
blocks on the southeast side of the fabric.
Dedicated global I/Os that drive the global blocks (GB) directly are named as GBn, where
n is 0 to 15.
Dedicated global I/Os that drive GBs through CCCs are named as CCC_xyz_lw, where:
xy is the location—NE, SW, or NW.
z is 0 or 1.
I represents I/O
w refers to one of the four possible output clocks of the associated CCC_xyz—GL0, GL1, GL2, or
GL3.
Dedicated global I/Os that drive GBs through VCCCs are named as VCCC_SEz, where:
SE is southeast.
z is 0 or 1.
Unused global pins are configured as inputs with pull-up resistors by Libero software.
For further details, refer to the "Fabric Global Routing Resources" chapter of the SmartFusion2 FPGA
Fabric Architecture User’s Guide.
User I/O Naming Conventions
The naming convention used for each FPGA user I/O is IOxyBz, where:
IO is the type of I/O—MSIO, MSIOD, or DDRIO
For the M2S050T device:
MSIO x is the I/O pair number in bank z, starting at 0 from bank 3 (southeast) and
proceeding in a counter-clockwise direction to bank 2 and bank 1.
MSIOD x is the I/O pair number in bank z, starting at 93 from bank9 (northwest) and proceeding in a
counter-clockwise direction to bank7 and bank6.
DDRIO x is the I/O pair number in bank z, starting at 49 from bank0 (north) to bank5 (south).
y is P (positive) or N (negative). In single-ended mode, the I/O pair operates as two separate I/Os
named P and N. Differential mode is implemented with a fixed I/O pair and cannot be split with an
adjacent I/O.
B is bank.
z is the bank number—0 to 9.
Differential standards are implemented as true differential outputs and complementary single-ended
outputs for SSTL/HSTL. In the single-ended mode, the I/O pair operates as two separate I/Os named P
and N. All the configuration and data inputs/outputs are then separate and use names ending in P and N
to differentiate between the two I/Os.
For more information, refer to the "I/Os" chapter of the SmartFusion2 FPGA Fabric Architecture User’s
Guide.
4-4
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
Multi-Standard I/O
SmartFusion2 devices feature a flexible I/O structure that supports a range of mixed voltages (1.2 V,
1.5 V, 1.8 V, 2.5 V, and 3.3 V) through bank selection. The MSIO, MSIOD, and DDRIO can be configured
as differential I/Os or two single-ended I/Os. These I/Os use one I/O slot to implement single-ended
standards and two I/O slots for differential standards. The DDRIO is shared between fabric logic and
MDDR/FDDR whereas MSIO/MSIOD is shared between MSS peripherals and fabric logic. When you do
not use an MDDR/FDDR controller or MSS peripherals, the respective I/Os are available to fabric logic.
For functional block diagrams of MSIO, MSIOD, and DDRIO, refer to the SmartFusion2 FPGA Fabric
Architecture User’s Guide.
For supported I/O standards, refer to the Supported Voltage Standards table in the SmartFusion2 FPGA
Fabric Architecture User’s Guide.
Bank 0
DDRIO (MDDR)
(44 pairs)
Bank 9
Bank 1
MSIOD/SERDES_1
(2 pairs)
MSIO
(11 pairs)
Bank 8
Bank 2
MSIO
(23 pairs)
SmartFusion2 SoC FPGA
Bank 7
MSIO
(13 pairs)
Bank 3
MSIOD
(27 pairs)
MSIO
(25 pairs)
Bank 6
MSIOD/SERDES_0
(2 pairs)
Bank 4
MSIOD/JTAG
(3 pairs)
Bank 5
DDRIO (FDDR)
(44 pairs)
Figure 4-1 •
SmartFusion2 (M2S050T) I/O Bank Location and Naming
Revision 0
4 -5
Pin Descriptions
Table 4-2 • Multi-Standard I/O Types
Name
Type
Description
MSIOxyBz
In/out
MSIOs provide programmable drive strength, weak pull-up, and weak-pull-down. In singleended mode, the I/O pair operates as two separate I/Os named P and N. Some of these pins
are also multiplexed with integrated peripherals in the MSS (I2C, USB, SPI, UART, CAN, and
fabric I/Os).This allows MSIO pins to be multiplexed as I/Os for the FPGA fabric, the ARM
Cortex-M3 processor, or for given integrated MSS peripherals. MSIOs can be routed to
dedicated I/O buffers (MSSIOBUF) or in some cases to the FPGA fabric interface through an
IOMUX. SmartFusion2 I/O ports also support ESD protection.
MSIODxyBz
In/out
MSIOD is very similar to MSIO, but drops 3.3 V and hot-plug support and adds pre-emphasis,
in order to achieve higher speeds. MSIODs provide programmable drive strength, weak
pull-up, and weak pull-down. MSIOD I/O cells operate at up to 2.5 V and are capable of
high-speed LVDS operation. Some of these pins are also multiplexed with the SERDES
interface. SmartFusion2 I/O ports support ESD protection.
DDRIOxyBz
In/out
The double data input output (DDRIO) is a multi-standard I/O optimized for
LPDDR/DDR2/DDR3 performance. In SmartFusion2 devices there are two DDR subsystems:
the fabric DDR and MSS DDR controllers. All DDRIOs can be configured as differential I/Os or
two single-ended I/Os. If you select MDDR/FDDR, Libero SoC automatically connects
MDDR/FDDR signals to the DDRIOs. DDRIOs can be connected to the respective DDR
subsystem PHYs or can be used as user I/Os. Depending on the memory configuration, only
the required DDRIOs are used by Libero SoC. The unused DDRIOs are available to connect
to the fabric.
I/O Programmable Features
SmartFusion2 devices support different I/O programmable features for MSIO, MSIOD, and DDRIO. Each
I/O pair (P, N) supports the following programmable features:
•
Programmable drive strength
•
Programmable weak pull-up and pull-down
•
Configurable ODT and driver impedance
•
Programmable input delay
•
Programmable Schmitt input and receiver
For more information on SmartFusion2 I/O programmable features, refer to the SmartFusion2 I/O
Feature table of the SmartFusion2 FPGA Fabric Architecture User's Guide.
4-6
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
Impedance Calibration
There are two DDRIO calibration blocks in each SmartFusion2 M2S050T device. The MDDR and FDDR
have a DDRIO calibration block. The DDRIO can use fixed impedance calibration for different drive
strengths, and these values can be programmed using Libero SoC for the selected I/O standard. These
values are fed to the pull-up/pull-down reference network to match the impedance with an external
resistor.
Table 4-3 • Reference Resistors
Pin Name
Reference Resistor (Ohm)
FDDR_IMP_CALIB_ECC
Pulled down with 240, 150, 300, or 191 Ohms, depending on
voltage/standard desired for optimization.
MDDR_IMP_CALIB_ECC
Pulled down with 240, 150, 300, or 191 Ohms, depending on
voltage/standard desired for optimization.
For the different drive modes, refer to the SmartFusion2 FPGA Fabric Architecture User’s Guide for
reference resistor values.
Dedicated I/Os
Dedicated I/Os (Table 4-4 and Table 4-6 on page 4-8) can be used for a single purpose such as
SERDES, device reset, or clock functions. SmartFusion2 dedicated I/Os:
•
Device reset I/Os
•
Crystal oscillator I/Os
•
SERDES I/Os
Table 4-4 • Device Reset and Crystal Oscillator Pin Types and Descriptions
Pin
Type
I/O
Description
Analog
Input
Device reset; asserted Low and powered by VPP
Device Reset I/Os
DEVRST_N
Crystal Oscillator I/Os
EXTLOSC
Analog
Input
Crystal connection or external RC network.
XTLOSC
Analog
Input
Input clock from the main crystal oscillator
Table 4-5 • Programming SPI Interface
Name
Type
Description
SC_SPI_SS
Out
SPI slave select
SC_SPI_SDO
Out
SPI data output
SC_SPI_SDI
In
SC_SPI_CLK
Out
FLASH_GOLDEN
In
SPI data input
SPI clock
If pulled High, this indicates that the device is to be re-programmed from an
image in the external SPI Flash attached to the SPI interface. If pulled Low, the
SPI is put into slave mode.
Revision 0
4 -7
Pin Descriptions
SERDES I/Os
The SERDES I/Os available in SmartFusion2 devices are dedicated for high speed serial communication
protocols. The SERDES I/Os support protocols such as PCI Express 2.0, XAUI, serial gigabit media
independent interface (SGMII), serial rapid IO (SRIO), and any user-defined high speed serial protocol
implementation in fabric.
Table 4-6 • SERDES I/O Port Names and Descriptions
Port Name
Type
Description
Data / Reference Pads
PCIE_x_RXDP0
Input
Receive data. SERDES differential positive input for each lane.
Each SERDESIF consists of 4 RX signals. Here x = 0 for SERDESIF_0 and
x = 1 for SERDESIF_1. If unused, can be left floating.
PCIE_x_RXDP1
PCIE_x_RXDP2
PCIE_x_RXDP3
PCIE_x_RXDN0
Input
Receive data. SERDES differential negative input for each lane.
Each SERDESIF consists of 4 RX signals. Here x = 0 for SERDESIF_0 and
x = 1 for SERDESIF_1. If unused, can be left floating.
PCIE_x_RXDN1
PCIE_x_RXDN2
PCIE_x_RXDN3
PCIE_x_TXDP0
Output
Transmit data. SERDES differential positive output for each lane.
Each SERDESIF consists of 4 TX signals. Here x = 0 for SERDESIF_0 and
x = 1 for SERDESIF_1. If unused, can be left floating.
PCIE_x_TXDP1
PCIE_x_TXDP2
PCIE_x_TXDP3
PCIE_x_TXDN0
Output
Transmit data. SERDES differential negative output for each lane.
Each SERDESIF consists of 4 TX signals. Here x = 0 for SERDESIF_0 and
x = 1 for SERDESIF_1. If unused, can be left floating.
PCIE_x_TXDN1
PCIE_x_TXDN2
PCIE_x_TXDN3
Common I/O Pads per SERDES Interface
PCIE_x_REXTL
Reference
External reference resistor connection to calibrate TX/RX termination value.
Each SERDESIF consists of 2 REXT signals—one for lane0 and lane1, and
another for lane2 and lane3. Here x = 0 for SERDESIF_0 and x = 1 for
SERDESIF_1. If unused, can be left floating.
Clock
Reference clock differential positive. Each SERDESIF consists of two signals
(REFCLK0_P, REFCLK1_P). These are dual purpose I/Os; you can use
these lines for MSIOD fabric, if SERDESIF is not activated. Here x = 0 for
SERDESIF_0 and x = 1 for SERDESIF_1. If unused, can be left floating.
Clock
Reference clock differential negative. Each SERDESIF consists of two
signals (REFCLK0_P, REFCLK1_P). These are dual purpose I/Os; you can
use these lines for MSIOD fabric, if SERDESIF is not activated. Here x = 0 for
SERDESIF_0 and x = 1 for SERDESIF_1. If unused, can be left floating.
PCIE_x_REXTR
PCIE_x_REFCLK0P
PCIE_x_REFCLK1P
PCIE_x_REFCLK0N
PCIE_x_REFCLK1N
4-8
R e vi s i o n 0
SmartFusion2 System-on-Chip FPGAs
JTAG Pins
SmartFusion2 devices have dedicated JTAG pins in bank 4. JTAG pins can be run at any voltage from
1.5 V to 3.3 V (nominal).
The debug port is implemented using a serial wire JTAG debug port (SWJ-DP) rather than a serial wire
debug port (SW-DP). This enables either the M3 JTAG or the SW protocol to be used for debugging.
Table 4-7 • JTAG Pin Names and Descriptions
Name
JTAGSEL
Type
Bus
Size
In
1
Description
JTAG controller selection.
Depending on the state of the JTAGSEL pin, an external JTAG controller will
see the FPGA fabric TAP/auxiliary TAP (High) or the Cortex-M3 JTAG debug
interface (Low).
The JTAGSEL pin should be connected to an external pull-up resistor such
that the default configuration selects the FPGA fabric TAP.
JTAG_TCK/
M3_TCK
In
1
Test clock.
Serial input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not
have an internal pull-up/pull-down resistor. If JTAG is not used,
Microsemi recommends tying it off.
Connect TCK to GND or +3.3 V through a resistor placed close to the FPGA
pin. This prevents totem-pole current on the input buffer and operation in case
TMS enters an undesired state. Note that to operate at all +3.3 V voltages,
500 Ω to 1 kΩ will satisfy the requirements.
JTAG_TDI/
M3_TDI
In
JTAG_TDO/
M3_TDO/
M3_SWO
Out
1
Test data.
Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an
internal weak pull-up resistor on the TDI pin.
1
Test data.
Serial output for JTAG boundary scan, ISP, and UJTAG usage. The TDO pin
does not have an internal pull-up/-down resistor.
M3_SWO: Serial Wire Viewer output
JTAG_TMS/
M3_TMS/
M3_SWDIO
1
Test mode select.
The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI,
TDO, and TRST). There is an internal weak pull-up resistor on the TMS pin.
M3_SWDIO: Serial Wire Debug data input/output
JTAG_TRSTB/
M3_TRSTB
1
Boundary scan reset pin.
The TRST pin functions as an active low input to asynchronously initialize (or
reset) the boundary scan circuitry. There is an internal weak pull-up resistor on
the TRST pin. If JTAG is not used, an external pull-down resistor (1K) could be
included to ensure the TAP is held in Reset mode. In critical applications, an
upset in the JTAG circuit could allow entering an undesired JTAG state. In
such cases, Microsemi recommends that you tie off TRST to GND through a
resistor (1K) placed close to the FPGA pin. The TRSTB pin also resets the
serial wire JTAG debug port (SWJ-DP) circuitry within the Cortex-M3
processor.
Revision 0
4 -9
Pin Descriptions
Microcontroller Subsystem (MSS)
Table 4-8 • MSS Pin Names and Descriptions
Name
Type
Description
Inter-Integrated Circuit (I2C) Peripherals
I2C_0_SCL
In/out
I2C bus serial clock output. Can also be used as an MSS GPIO or
USB_DATA1_C or fabric I/O.
I2C_0_SDA
In/out
I2C bus serial data input/output. Can also be used as an MSS GPIO or
USB_DATA0_C or fabric I/O.
I2C_1_SCL
in/out
I2C bus serial clock output. Can also be used as an MSS GPIO or
USB_DATA4_A.
I2C_1_SDA
in/out
I2C bus serial data input/output. Can also be used as an MSS GPIO or
USB_DATA3_A.
Universal Asynchronous Receiver/Transmitter (UART) Peripherals
MMUART_0_CLK
Out
UART clock. Can also be used as an MSS GPIO or USB_NXT_C or fabric I/O.
MMUART_0_TXD
Out
UART transmit data.
Can also be used as an MSS GPIO or USB_DIR_C or fabric I/O.
MMUART_0_RXD
In
UART receive data.
Can also be used as an MSS GPIO or USB_STP_C or fabric I/O.
MMUART_0_CTS
In
UART clear to send.
Can also be used as an MSS GPIO or USB_DATA7_C or fabric I/O.
MMUART_0_RTS
Out
UART request to send.
Can also be used as an MSS GPIO or USB_DATA5_C or fabric I/O.
MMUART_0_DTR
Out
Modem data terminal ready. Can also be used as an MSS GPIO or
USB_DATA6_C or fabric I/O.
MMUART_0_DCD
In
Modem data carrier detects. Can also be used as an MSS GPIO or fabric I/O.
MMUART_0_DSR
In
Modem data set ready.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_0_RI
In
Modem ring indicator.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_1_CLK
Out
UART Clock.
Can also be used as an MSS GPIO or USB_DATA4_C.
MMUART_1_TXD
Out
UART transmit data.
Can also be used as an MSS GPIO or USB_DATA2_C or fabric I/O.
MMUART_1_RXD
In
UART receive data.
Can also be used as an MSS GPIO or USB_DATA3_C or fabric I/O.
MMUART_1_CTS
In
UART clear to send.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_1_RTS
Out
UART request to send.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_1_DTR
Out
Modem data terminal ready.
Can also be used as an MSS GPIO or fabric I/O.
4- 10
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
Table 4-8 • MSS Pin Names and Descriptions (continued)
Name
MMUART_1_DCD
Type
In
Description
Modem data carrier detects.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_1_DSR
In
Modem data set ready.
Can also be used as an MSS GPIO or fabric I/O.
MMUART_1_RI
In
Modem ring indicator.
Can also be used as an MSS GPIO or fabric I/O.
Serial Peripheral Interface (SPI) Controllers
SPI_0_SS0
Out
SPI slave select0.
Can also be used as an MSS GPIO or USB_NXT_A or fabric I/O.
SPI_0_SS1
Out
SPI slave select1.
Can also be used as an MSS GPIO or USB_DATA5_A or fabric I/O.
SPI_0_SS2
Out
SPI slave select2.
Can also be used as an MSS GPIO or USB_DATA6_A or fabric I/O.
SPI_0_SS3
Out
SPI slave select3.
Can also be used as an MSS GPIO or USB_DATA7_A or fabric I/O.
SPI_0_SS4
Out
SPI slave select4.
Can also be used as an MSS GPIO or fabric I/O.
SPI_0_SS5
Out
SPI_0_SS6
Out
SPI slave select5. Can also be used as an MSS GPIO or fabric I/O.
SPI slave select6.
Can also be used as an MSS GPIO or fabric I/O.
SPI_0_SS7
Out
SPI slave select7.
Can also be used as an MSS GPIO or fabric I/O.
SPI_0_CLK
Out
SPI clock.
Can also be used as an MSS GPIO or USB_XCLK_A.
SPI_0_SDO
Out
SPI data output.
Can also be used as an MSS GPIO or USB_STP_A or fabric I/O.
SPI_0_SDI
In
SPI data input.
Can also be used as an MSS GPIO or USB_DIR_A or fabric I/O.
SPI_1_SS0
Out
SPI slave select0.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS1
Out
SPI slave select1.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS2
Out
SPI slave select2.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS3
Out
SPI slave select3.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS4
Out
SPI slave select4.
Can also be used as an MSS GPIO or fabric I/O.
Revision 0
4- 11
Pin Descriptions
Table 4-8 • MSS Pin Names and Descriptions (continued)
Name
SPI_1_SS5
Type
Out
Description
SPI slave select5.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS6
Out
SPI slave select6.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SS7
Out
SPI slave select7.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_CLK
Out
SPI clock.
Can also be used as an MSS GPIO.
SPI_1_SDO
Out
SPI data output.
Can also be used as an MSS GPIO or fabric I/O.
SPI_1_SDI
In
SPI data input.
Can also be used as an MSS GPIO or fabric I/O.
Multi-Function I/Os
Certain I/Os can have more than one function. Users select the functionality through Libero configuration
tools.
The name of a pin shows the functionalities for which that pin can be configured and used.
Example pin name: MSIO48NB1/I2C_0_SCL/GPIO_31_B/USB_DATA1_C
This I/O port is multi-purpose and can be configured as MSIO, I2C0 clock, fabric I/O, or USB_DATA1_C.
4- 12
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SmartFusion2 System-on-Chip FPGAs
Pin Assignment Tables
FG896
A1 Ball Pad Corner
30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 6 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
Revision 0
4- 13
Pin Descriptions
FG896
4- 14
Pin Number
M2S050T Function
A2
PCIE_1_TXDN0
A3
VSS
A4
PCIE_1_TXDN1
A5
VSS
A6
PCIE_1_TXDN2
A7
VSS
A8
PCIE_1_TXDN3
A9
DDRIO91PB0/GB0/CCC_NW0_I3
A10
DDRIO90PB0/MDDR_DQS_ECC
A11
DDRIO88PB0/MDDR_DQ32_ECC
A12
DDRIO86PB0/MDDR_DQ0
A13
DDRIO84PB0/MDDR_DQS0
A14
DDRIO83NB0/MDDR_DQ4
A15
DDRIO80PB0/MDDR_DQ8
A16
DDRIO78PB0/GB8/CCC_NE0_I3/MDDR_DQS1
A17
DDRIO76PB0/GB12/CCC_NE1_I2/MDDR_DQ12
A18
DDRIO74PB0/MDDR_DQ16
A19
DDRIO72PB0/MDDR_DQS2
A20
DDRIO71NB0/MDDR_DQ20
A21
DDRIO68PB0/MDDR_DQ24
A22
DDRIO66NB0/MDDR_DQS3_N
A23
DDRIO64PB0/MDDR_DQ28
A24
DDRIO60PB0/MDDR_RST_N
A25
DDRIO59PB0/MDDR_CLK
A26
DDRIO57PB0/MDDR_BA2
A27
DDRIO55PB0/MDDR_ADDR3
A28
DDRIO55NB0/MDDR_ADDR4
A29
VSS
AA1
MSIOD134NB7
AA2
MSIOD134PB7
AA3
MSIOD129NB7
AA4
MSIOD136NB7
AA5
MSIOD141NB7
AA6
PCIE_0_REXTL
AA7
PLL_PCIE_0_VSSA
AA8
PLL_PCIE_0_VDDA
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
AA9
PCIE_0_REXTR
AA10
PLL4_VSSA
AA11
PCIE0VDDIOL
AA12
PCIE0VDDIOR
AA13
VDDI5
AA14
VDDI5
AA15
VDDI5
AA16
VDDI5
AA17
VDDI5
AA18
VDDI5
AA19
VDDI5
AA20
VDDI5
AA21
VDD
AA22
VSS
AA23
PLL_FDDR_VSSA
AA24
VDDI4
AA25
JTAGSEL
AA26
MSIO2PB3/USB_STP_B
AA27
MSIO2NB3/USB_NXT_B
AA28
MSIO7NB3/CAN_TX/GPIO_2_A/USB_DATA0_A
AA29
MSIO8NB3/CAN_TX_EN_N/GPIO_4_A/USB_DATA2_A
AA30
SC_SPI_CLK
AB1
MSIOD135NB7
AB2
MSIOD135PB7
AB3
VDDI7
AB4
MSIOD137NB7
AB5
PCIE0VDD
AB6
VSS
AB7
VSS
AB8
PCIE_0_RXDP0
AB9
PCIE_0_RXDN0
AB10
PCIE_0_RXDP2
AB11
PCIE_0_RXDN2
AB12
PCIE0VDD
AB13
VSS
AB14
VSS
Revision 0
4- 15
Pin Descriptions
FG896
4- 16
Pin Number
M2S050T Function
AB15
VSS
AB16
VSS
AB17
VSS
AB18
VSS
AB19
VSS
AB20
VREF5
AB21
XTLOSC
AB22
EXTLOSC
AB23
PLL_FDDR_VDDA
AB24
VSS
AB25
JTAG_TRSTB/M3_TRSTB
AB26
MSIO0NB3/USB_DATA7_B
AB27
JTAG_TMS/M3_TMS/M3_SWDIO
AB28
VSS
AB29
MSIO6PB3/USB_DATA6_B
AB30
MSIO6NB3
AC1
MSIOD138NB7
AC2
MSIOD138PB7
AC3
MSIOD140NB7
AC4
MSIOD143PB7
AC5
VSS
AC6
VSS
AC7
PCIE0VDDPLLL
AC8
PCIE0PLLREFRETL
AC9
PCIE_0_RXDP1
AC10
PCIE_0_RXDN1
AC11
VPP
AC12
VSS
AC13
VDD
AC14
VDD
AC15
VDD
AC16
VDD
AC17
VDD
AC18
VDD
AC19
VDD
AC20
VSS
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
AC21
VSS
AC22
VSS
AC23
VSS
AC24
VDDI4
AC25
JTAG_TDO/M3_TDO/M3_SWO
AC26
JTAG_TCK/M3_TCK
AC27
DEVRST_N
AC28
MSIO1PB3/USB_XCLK_B
AC29
MSIO1NB3/USB_DIR_B
AC30
MSIO5NB3/USB_DATA5_B
AD1
MSIOD139NB7
AD2
MSIOD139PB7
AD3
MSIOD143NB7
AD4
VSS
AD5
VSS
AD6
VSS
AD7
VSS
AD8
VSS
AD9
PCIE0PLLREFRETR
AD10
PCIE_0_RXDP3
AD11
PCIE_0_RXDN3
AD12
DDRIO150PB5/FDDR_FIFO_WE_IN_ECC
AD13
VREF5
AD14
VSS
AD15
VSS
AD16
VREF5
AD17
VSS
AD18
VSS
AD19
VSS
AD20
VSS
AD21
VSS
AD22
VSS
AD23
VSS
AD24
VSS
AD25
VSS
AD26
VSS
Revision 0
4- 17
Pin Descriptions
FG896
4- 18
Pin Number
M2S050T Function
AD27
VSS
AD28
VSS
AD29
VSS
AD30
MSIO5PB3/USB_DATA4_B
AE1
MSIOD146NB6/PCIE_0_REFCLK1N
AE2
MSIOD144NB7
AE3
VSS
AE4
VSS
AE5
VSS
AE6
VSS
AE7
VSS
AE8
VSS
AE9
PCIE0VDDPLLR
AE10
VDDI5
AE11
DDRIO147PB5/FDDR_FIFO_WE_OUT_ECC
AE12
VSS
AE13
VDDI5
AE14
DDRIO158NB5/FDDR_FIFO_WE_OUT1
AE15
DDRIO162PB5/FDDR_FIFO_WE_IN1
AE16
VDDI5
AE17
VSS
AE18
DDRIO170NB5/FDDR_FIFO_WE_OUT3
AE19
VDDI5
AE20
VSS
AE21
DDRIO174PB5/FDDR_FIFO_WE_IN3
AE22
VDDI5
AE23
DDRIO185NB5/FDDR_ADDR6
AE24
DDRIO185PB5/FDDR_ADDR5
AE25
VDDI5
AE26
VSS
AE27
DDRIO189PB5/FDDR_ADDR12
AE28
VDDI5
AE29
DDRIO178NB5/FDDR_CS_N
AE30
MSIO4NB3/USB_DATA3_B
AF1
MSIOD146PB6/PCIE_0_REFCLK1P
AF2
VSS
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
AF3
VSS
AF4
VSS
AF5
VSS
AF6
VSS
AF7
VSS
AF8
VSS
AF9
FDDR_IMP_CALIB_ECC
AF10
VDDI5
AF11
DDRIO152PB5/GB3/CCC_SW0_I3/FDDR_DQ34_ECC
AF12
DDRIO154NB5/FDDR_DQ3
AF13
VDDI5
AF14
DDRIO157NB5/FDDR_DQ6
AF15
DDRIO160NB5/FDDR_DQ11
AF16
VDDI5
AF17
DDRIO164PB5/VCCC_SE1/FDDR_DQ14
AF18
DDRIO166NB5/FDDR_DQ19
AF19
VDDI5
AF20
DDRIO169NB5/FDDR_DQ22
AF21
DDRIO172NB5/FDDR_DQ27
AF22
VDDI5
AF23
DDRIO176PB5/FDDR_DQ30
AF24
DDRIO186NB5/FDDR_ADDR7
AF25
DDRIO186PB5/FDDR_ODT
AF26
VSS
AF27
DDRIO189NB5/FDDR_ADDR13
AF28
VDDI5
AF29
DDRIO178PB5/FDDR_CKE
AF30
VSS
AG1
VSS
AG2
VSS
AG3
VSS
AG4
VSS
AG5
VSS
AG6
VSS
AG7
VSS
AG8
VSS
Revision 0
4- 19
Pin Descriptions
FG896
4- 20
Pin Number
M2S050T Function
AG9
DDRIO147NB5/CCC_SW0_I2
AG10
DDRIO150NB5/FDDR_DM_RDQS4_ECC
AG11
DDRIO152NB5/GB7/CCC_SW1_I2/FDDR_DQ35_ECC
AG12
DDRIO154PB5/FDDR_DQ2
AG13
DDRIO156PB5/FDDR_DM_RQDS0
AG14
DDRIO157PB5/FDDR_DQ5
AG15
DDRIO160PB5/VCCC_SE0/FDDR_DQ10
AG16
DDRIO162NB5/FDDR_DM_RQDS1
AG17
DDRIO164NB5/FDDR_DQ15
AG18
DDRIO166PB5/FDDR_DQ18
AG19
DDRIO168PB5/FDDR_DM_RQDS2
AG20
DDRIO169PB5/FDDR_DQ21
AG21
DDRIO172PB5/FDDR_DQ26
AG22
DDRIO174NB5/FDDR_DM_RQDS3
AG23
DDRIO176NB5/FDDR_DQ31
AG24
DDRIO181PB5/FDDR_BA0
AG25
DDRIO181NB5/FDDR_BA1
AG26
VDDI5
AG27
DDRIO187PB5/FDDR_ADDR8
AG28
DDRIO187NB5/FDDR_ADDR9
AG29
DDRIO190PB5/FDDR_ADDR14
AG30
DDRIO177PB5/FDDR_RAS_N
AH1
VSS
AH2
VSS
AH3
VSS
AH4
VSS
AH5
VSS
AH6
VSS
AH7
VSS
AH8
VSS
AH9
VSS
AH10
VDDI5
AH11
VSS
AH12
VSS
AH13
VDDI5
AH14
VSS
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
AH15
VSS
AH16
VDDI5
AH17
VSS
AH18
VSS
AH19
VDDI5
AH20
VSS
AH21
VSS
AH22
VDDI5
AH23
VSS
AH24
VSS
AH25
VDDI5
AH26
VSS
AH27
DDRIO183PB5/FDDR_ADDR1
AH28
VDDI5
AH29
DDRIO190NB5/FDDR_ADDR15
AH30
DDRIO177NB5/FDDR_WE_N
AJ1
VSS
AJ2
PCIE_0_TXDP0
AJ3
VSS
AJ4
PCIE_0_TXDP1
AJ5
VSS
AJ6
PCIE_0_TXDP2
AJ7
VSS
AJ8
PCIE_0_TXDP3
AJ9
DDRIO148NB5/PROBE_B
AJ10
DDRIO149NB5/FDDR_DQS_ECC_N
AJ11
DDRIO151NB5/FDDR_DQ33_ECC
AJ12
DDRIO153NB5/FDDR_DQ1
AJ13
DDRIO155NB5/FDDR_DQS0_N
AJ14
DDRIO158PB5/FDDR_DQ7
AJ15
DDRIO159NB5/FDDR_DQ9
AJ16
DDRIO161NB5/FDDR_DQS1_N
AJ17
DDRIO163NB5/FDDR_DQ13
AJ18
DDRIO165NB5/FDDR_DQ17
AJ19
DDRIO167NB5/FDDR_DQS2_N
AJ20
DDRIO170PB5/FDDR_DQ23
Revision 0
4- 21
Pin Descriptions
FG896
4- 22
Pin Number
M2S050T Function
AJ21
DDRIO171NB5/FDDR_DQ25
AJ22
DDRIO173PB5/FDDR_DQS3
AJ23
DDRIO175NB5/FDDR_DQ29
AJ24
DDRIO179NB5/FDDR_CAS_N
AJ25
DDRIO180NB5/FDDR_CLK_N
AJ26
DDRIO182NB5/FDDR_ADDR0
AJ27
DDRIO183NB5/FDDR_ADDR2
AJ28
DDRIO188NB5/FDDR_ADDR11
AJ29
DDRIO188PB5/FDDR_ADDR10
AJ30
VSS
AK2
PCIE_0_TXDN0
AK3
VSS
AK4
PCIE_0_TXDN1
AK5
VSS
AK6
PCIE_0_TXDN2
AK7
VSS
AK8
PCIE_0_TXDN3
AK9
DDRIO148PB5/PROBE_A
AK10
DDRIO149PB5/FDDR_DQS_ECC
AK11
DDRIO151PB5/FDDR_DQ32_ECC
AK12
DDRIO153PB5/FDDR_DQ0
AK13
DDRIO155PB5/FDDR_DQS0
AK14
DDRIO156NB5/FDDR_DQ4
AK15
DDRIO159PB5/CCC_SW1_I3/FDDR_DQ8
AK16
DDRIO161PB5/GB11/VCCC_SE0/FDDR_DQS1
AK17
DDRIO163PB5/GB15/VCCC_SE1/FDDR_DQ12
AK18
DDRIO165PB5/FDDR_DQ16
AK19
DDRIO167PB5/FDDR_DQS2
AK20
DDRIO168NB5/FDDR_DQ20
AK21
DDRIO171PB5/FDDR_DQ24
AK22
DDRIO173NB5/FDDR_DQS3_N
AK23
DDRIO175PB5/FDDR_DQ28
AK24
DDRIO179PB5/FDDR_RST_N
AK25
DDRIO180PB5/FDDR_CLK
AK26
DDRIO182PB5/FDDR_BA2
AK27
DDRIO184PB5/FDDR_ADDR3
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
AK28
DDRIO184NB5/FDDR_ADDR4
AK29
VSS
B1
VSS
B2
PCIE_1_TXDP0
B3
VSS
B4
PCIE_1_TXDP1
B5
VSS
B6
PCIE_1_TXDP2
B7
VSS
B8
PCIE_1_TXDP3
B9
DDRIO91NB0/GB4/CCC_NW1_I2
B10
DDRIO90NB0/MDDR_DQS_ECC_N
B11
DDRIO88NB0/MDDR_DQ33_ECC
B12
DDRIO86NB0/MDDR_DQ1
B13
DDRIO84NB0/MDDR_DQS0_N
B14
DDRIO81PB0/MDDR_DQ7
B15
DDRIO80NB0/MDDR_DQ9
B16
DDRIO78NB0/MDDR_DQS1_N
B17
DDRIO76NB0/MDDR_DQ13
B18
DDRIO74NB0/MDDR_DQ17
B19
DDRIO72NB0/MDDR_DQS2_N
B20
DDRIO69PB0/MDDR_DQ23
B21
DDRIO68NB0/MDDR_DQ25
B22
DDRIO66PB0/MDDR_DQS3
B23
DDRIO64NB0/MDDR_DQ29
B24
DDRIO60NB0/MDDR_CAS_N
B25
DDRIO59NB0/MDDR_CLK_N
B26
DDRIO57NB0/MDDR_ADDR0
B27
DDRIO56NB0/MDDR_ADDR2
B28
DDRIO51NB0/MDDR_ADDR11
B29
DDRIO51PB0/MDDR_ADDR10
B30
VSS
C1
VSS
C2
VSS
C3
VSS
C4
VSS
Revision 0
4- 23
Pin Descriptions
FG896
4- 24
Pin Number
M2S050T Function
C5
VSS
C6
VSS
C7
VSS
C8
VSS
C9
VSS
C10
VDDI0
C11
VSS
C12
VSS
C13
VDDI0
C14
VSS
C15
VSS
C16
VDDI0
C17
VSS
C18
VSS
C19
VDDI0
C20
VSS
C21
VSS
C22
VDDI0
C23
VSS
C24
VSS
C25
VDDI0
C26
VSS
C27
DDRIO56PB0/MDDR_ADDR1
C28
VDDI0
C29
DDRIO49NB0/MDDR_ADDR15
C30
DDRIO62NB0/MDDR_WE_N
D1
VSS
D2
VSS
D3
VSS
D4
VSS
D5
VSS
D6
VSS
D7
VSS
D8
VSS
D9
DDRIO92NB0/CCC_NW0_I2
D10
DDRIO89NB0/MDDR_DM_RQDS4_ECC
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
D11
DDRIO87NB0/MDDR_DQ35_ECC
D12
DDRIO85PB0/MDDR_DQ2
D13
DDRIO83PB0/MDDR_DM_RQDS0
D14
DDRIO82PB0/MDDR_DQ5
D15
DDRIO79PB0/CCC_NE0_I2/MDDR_DQ10
D16
DDRIO77NB0/MDDR_DM_RQDS1
D17
DDRIO75NB0/MDDR_DQ15
D18
DDRIO73PB0/MDDR_DQ18
D19
DDRIO71PB0/MDDR_DM_RQDS2
D20
DDRIO70PB0/MDDR_DQ21
D21
DDRIO67PB0/MDDR_DQ26
D22
DDRIO65NB0/MDDR_DM_RQDS3
D23
DDRIO63NB0/MDDR_DQ31
D24
DDRIO58PB0/MDDR_BA0
D25
DDRIO58NB0/MDDR_BA1
D26
VDDI0
D27
DDRIO52PB0/MDDR_ADDR8
D28
DDRIO52NB0/MDDR_ADDR9
D29
DDRIO49PB0/MDDR_ADDR14
D30
DDRIO62PB0/MDDR_RAS_N
E1
MSIOD94NB9/PCIE_1_REFCLK0N
E2
VSS
E3
VSS
E4
VSS
E5
VSS
E6
VSS
E7
VSS
E8
VSS
E9
MDDR_IMP_CALIB_ECC
E10
VDDI0
E11
DDRIO87PB0/CCC_NW1_I3/MDDR_DQ34_ECC
E12
DDRIO85NB0/MDDR_DQ3
E13
VDDI0
E14
DDRIO82NB0/MDDR_DQ6
E15
DDRIO79NB0/MDDR_DQ11
E16
VDDI0
Revision 0
4- 25
Pin Descriptions
FG896
4- 26
Pin Number
M2S050T Function
E17
DDRIO75PB0/CCC_NE1_I3/MDDR_DQ14
E18
DDRIO73NB0/MDDR_DQ19
E19
VDDI0
E20
DDRIO70NB0/MDDR_DQ22
E21
DDRIO67NB0/MDDR_DQ27
E22
VDDI0
E23
DDRIO63PB0/MDDR_DQ30
E24
DDRIO53NB0/MDDR_ADDR7
E25
DDRIO53PB0/MDDR_ODT
E26
VSS
E27
DDRIO50NB0/MDDR_ADDR13
E28
VDDI0
E29
DDRIO61PB0/MDDR_CKE
E30
VSS
F1
MSIOD94PB9/PCIE_1_REFCLK0P
F2
MSIO108NB8
F3
VSS
F4
VSS
F5
VSS
F6
VSS
F7
VSS
F8
VSS
F9
PCIE1VDDPLLR
F10
VDDI0
F11
DDRIO92PB0/MDDR_FIFO_WE_OUT_ECC
F12
VSS
F13
VDDI0
F14
DDRIO81NB0/MDDR_FIFO_WE_OUT1
F15
DDRIO77PB0/MDDR_FIFO_WE_IN1
F16
VDDI0
F17
VSS
F18
DDRIO69NB0/MDDR_FIFO_WE_OUT3
F19
VDDI0
F20
VSS
F21
DDRIO65PB0/MDDR_FIFO_WE_IN3
F22
VDDI0
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
F23
DDRIO54NB0/MDDR_ADDR6
F24
DDRIO54PB0/MDDR_ADDR5
F25
VSS
F26
VDDI0
F27
DDRIO50PB0/MDDR_ADDR12
F28
VDDI0
F29
DDRIO61NB0/MDDR_CS_N
F30
MSIO45NB1/MMUART_0_DCD/GPIO_22_B
G1
MSIO100NB8
G2
MSIO95PB8
G3
MSIO95NB8
G4
VSS
G5
VSS
G6
VSS
G7
VSS
G8
VSS
G9
PCIE1PLLREFRETR
G10
PCIE_1_RXDP3
G11
PCIE_1_RXDN3
G12
DDRIO89PB0/MDDR_FIFO_WE_IN_ECC
G13
VREF0
G14
VSS
G15
VSS
G16
VREF0
G17
VSS
G18
VSS
G19
VSS
G20
VSS
G21
VSS
G22
VSS
G23
VSS
G24
VSS
G25
VSS
G26
VSS
G27
VSS
G28
FLASH_GOLDEN
Revision 0
4- 27
Pin Descriptions
FG896
4- 28
Pin Number
M2S050T Function
G29
MSIO42NB1/MMUART_1_RXD/GPIO_26_B/USB_DATA3_C
G30
MSIO45PB1/MMUART_0_RI/GPIO_21_B
H1
MSIO99PB8
H2
MSIO99NB8
H3
VDDI8
H4
MSIO96NB8
H5
VSS
H6
VSS
H7
PCIE1VDDPLLL
H8
PCIE1PLLREFRETL
H9
PCIE_1_RXDP1
H10
PCIE_1_RXDN1
H11
VSS
H12
VSS
H13
VDD
H14
VDD
H15
VDD
H16
VDD
H17
VDD
H18
VDD
H19
VDD
H20
VSS
H21
VSS
H22
VSS
H23
VSS
H24
PLL0_VDDA
H25
PLL0_VSSA
H26
MSIO47NB1/MMUART_0_CLK/GPIO_29_B/USB_NXT_C
H27
MSIO46NB1/MMUART_0_TXD/GPIO_27_B/USB_DIR_C
H28
MSIO40NB1/MMUART_1_DCD/GPIO_16_B
H29
MSIO42PB1/GB14/VCCC_SE1/MMUART_1_CLK/GPIO_25_B/USB_DATA4_C
H30
MSIO41NB1/MMUART_1_TXD/GPIO_24_B/USB_DATA2_C
J1
MSIO102PB8
J2
MSIO102NB8
J3
MSIO98PB8
J4
MSIO98NB8
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
J5
VSS
J6
VSS
J7
VSS
J8
PCIE_1_RXDP0
J9
PCIE_1_RXDN0
J10
PCIE_1_RXDP2
J11
PCIE_1_RXDN2
J12
PCIE1VDD
J13
VSS
J14
VSS
J15
VSS
J16
VSS
J17
VSS
J18
VSS
J19
VSS
J20
VREF0
J21
VSS
J22
PLL_MDDR_VDDA
J23
PLL_MDDR_VSSA
J24
PLL1_VSSA
J25
PLL1_VDDA
J26
MSIO43NB1/MMUART_0_DTR/GPIO_18_B/USB_DATA6_C
J27
MSIO35NB2/GPIO_6_B
J28
MSIO38NB1/MMUART_1_DTR/GPIO_12_B
J29
MSIO38PB1/MMUART_1_RTS/GPIO_11_B
J30
MSIO41PB1/GB10/VCCC_SE0/USB_XCLK_C
K1
VSS
K2
VDDI8
K3
MSIO101NB8
K4
VSS
K5
MSIO97NB8
K6
PCIE_1_REXTL
K7
PLL_PCIE_1_VSSA
K8
PLL_PCIE_1_VDDA
K9
PCIE_1_REXTR
K10
PLL3_VDDA
Revision 0
4- 29
Pin Descriptions
FG896
4- 30
Pin Number
M2S050T Function
K11
PCIE1VDDIOL
K12
PCIE1VDDIOR
K13
VDDI0
K14
VDDI0
K15
VDDI0
K16
VDDI0
K17
VDDI0
K18
VDDI0
K19
VDDI0
K20
VDDI0
K21
VDD
K22
VSS
K23
MSIO48PB1/I2C_0_SDA/GPIO_30_B/USB_DATA0_C
K24
MSIO48NB1/I2C_0_SCL/GPIO_31_B/USB_DATA1_C
K25
MSIO44NB1/MMUART_0_DSR/GPIO_20_B
K26
VDDI1
K27
VSS
K28
MSIO34NB2/GPIO_4_B
K29
MSIO37NB2/GPIO_10_B
K30
MSIO37PB2/GPIO_9_B
L1
MSIO104NB8
L2
MSIO103PB8
L3
MSIO103NB8
L4
MSIO113NB8
L5
VSS
L6
MSIOD93PB9/PCIE_1_REFCLK1P
L7
MSIOD93NB9/PCIE_1_REFCLK1N
L8
PCIE1VDD
L9
PLL2_VSSA
L10
PLL3_VSSA
L11
VSS
L12
VSS
L13
VSS
L14
VSS
L15
VSS
L16
VSS
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
L17
VSS
L18
VSS
L19
VSS
L20
VSS
L21
VDDI1
L22
VDD
L23
MSIO47PB1/MMUART_0_RXD/GPIO_28_B/USB_STP_C
L24
VSS
L25
VDDI1
L26
MSIO39NB1/MMUART_1_DSR/GPIO_14_B
L27
VDDI2
L28
MSIO34PB2/GPIO_3_B
L29
MSIO33NB2/GPIO_2_B
L30
MSIO33PB2/GPIO_1_B
M1
MSIO107PB8
M2
MSIO107NB8
M3
MSIO106PB8
M4
MSIO106NB8
M5
05NB8
M6
VDDI8
M7
VDDI9
M8
MSIO97PB8
M9
PLL2_VDDA
M10
VDD
M11
VSS
M12
VSS
M13
VSS
M14
VSS
M15
VSS
M16
VSS
M17
VSS
M18
VSS
M19
VSS
M20
VSS
M21
VSS
M22
VSS
Revision 0
4- 31
Pin Descriptions
FG896
4- 32
Pin Number
M2S050T Function
M23
MSIO44PB1/MMUART_0_CTS/GPIO_19_B/USB_DATA7_C
M24
MSIO43PB1/MMUART_0_RTS/GPIO_17_B/USB_DATA5_C
M25
MSIO40PB1/CCC_NE1_I1/MMUART_1_RI/GPIO_15_B
M26
MSIO36NB2/GPIO_8_B
M27
MSIO32NB2/GPIO_0_B
M28
MSIO30NB2/USB_DATA7_D/GPIO_23_B
M29
VSS
M30
MSIO29NB2/USB_DATA5_D
N1
MSIO111PB8
N2
MSIO111NB8
N3
MSIO110PB8
N4
MSIO110NB8
N5
MSIO109NB8
N6
MSIO100PB8
N7
MSIO96PB8
N8
MSIO101PB8
N9
MSIO104PB8
N10
VDDI8
N11
VSS
N12
VSS
N13
VSS
N14
VSS
N15
VSS
N16
VSS
N17
VSS
N18
VSS
N19
VSS
N20
VSS
N21
VDDI1
N22
VDD
N23
MSIO39PB1/CCC_NE0_I1/MMUART_1_CTS/GPIO_13_B
N24
MSIO36PB2/GPIO_7_B
N25
MSIO35PB2/GPIO_5_B
N26
MSIO31NB2/GPIO_30_A
N27
MSIO30PB2/USB_DATA6_D
N28
MSIO29PB2/USB_DATA4_D
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
N29
MSIO28NB2/USB_DATA3_D
N30
MSIO26NB2/USB_NXT_D
P1
MSIO115PB8/GB2/CCC_NW0_I1
P2
MSIO115NB8
P3
MSIO114PB8/GB6/CCC_NW1_I1
P4
MSIO114NB8
P5
MSIO112NB8
P6
MSIO105PB8
P7
MSIO108PB8
P8
MSIO112PB8
P9
MSIO116PB8/CCC_NW1_I0
P10
VDD
P11
VSS
P12
VSS
P13
VSS
P14
VSS
P15
VSS
P16
VSS
P17
VSS
P18
VSS
P19
VSS
P20
VSS
P21
VDDI2
P22
VSS
P23
MSIO32PB2/GPIO_31_A
P24
MSIO31PB2/GPIO_29_A
P25
MSIO28PB2/USB_DATA2_D
P26
MSIO27PB2/USB_DATA0_D
P27
MSIO27NB2/USB_DATA1_D
P28
MSIO26PB2/USB_STP_D
P29
MSIO25NB2/USB_DIR_D
P30
MSIO25PB2/USB_XCLK_D
R1
MSIOD119PB7/GB1/CCC_SW0_I1
R2
MSIOD119NB7
R3
MSIOD118PB7/GB5/CCC_SW1_I1
R4
MSIOD118NB7
Revision 0
4- 33
Pin Descriptions
FG896
4- 34
Pin Number
M2S050T Function
R5
MSIO116NB8
R6
MSIO117NB8
R7
MSIO109PB8
R8
MSIO113PB8
R9
MSIO117PB8/CCC_NW0_I0
R10
VDDI8
R11
VSS
R12
VSS
R13
VSS
R14
VSS
R15
VSS
R16
VSS
R17
VSS
R18
VSS
R19
VSS
R20
VSS
R21
VDDI2
R22
VDD
R23
VPP
R24
MSIO24PB3/SPI_1_SS2/GPIO_15_A
R25
MSIO23PB3/SPI_0_SS3/GPIO_10_A/USB_DATA7_A
R26
VDDI2
R27
VSS
R28
MSIO24NB3/SPI_1_SS3/GPIO_16_A
R29
MSIO23NB3/SPI_1_SS1/GPIO_14_A
R30
MSIO22NB3/SPI_0_SS2/GPIO_9_A/USB_DATA6_A
T1
MSIOD120NB7
T2
VSS
T3
VDDI7
T4
MSIOD121NB7
T5
MSIOD125NB7
T6
MSIOD128PB7
T7
MSIOD120PB7/CCC_SW1_I0
T8
MSIOD124PB7
T9
MSIOD133PB7
T10
VDD
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
T11
VSS
T12
VSS
T13
VSS
T14
VSS
T15
VSS
T16
VSS
T17
VSS
T18
VSS
T19
VSS
T20
VSS
T21
VSS
T22
VSS
T23
VSSNVM
T24
MSIO20PB3/GB9/VCCC_SE0/GPIO_25_A
T25
VDDI3
T26
MSIO21PB3/GPIO_27_A
T27
MSIO21NB3/GPIO_28_A
T28
MSIO20NB3/GB13/VCCC_SE1/GPIO_26_A
T29
VPPNVM
T30
MSIO22PB3/SPI_0_SS1/GPIO_8_A/USB_DATA5_A
U1
MSIOD122NB7
U2
MSIOD122PB7
U3
MSIOD123NB7
U4
MSIOD123PB7
U6
MSIOD136PB7
U7
MSIOD121PB7/CCC_SW0_I0
U8
MSIOD125PB7
U9
MSIOD132PB7
U10
VDDI7
U11
VSS
U12
VSS
U13
VSS
U14
VSS
U15
VSS
U16
VSS
U17
VSS
Revision 0
4- 35
Pin Descriptions
FG896
4- 36
Pin Number
M2S050T Function
U18
VSS
U19
VSS
U20
VSS
U21
VDDI3
U22
VDD
U23
MSIO16PB3/SPI_1_CLK
U24
MSIO15PB3/SPI_0_SS6/GPIO_21_A
U25
MSIO19PB3/SPI_1_SS6/GPIO_23_A
U26
MSIO15NB3/SPI_0_SS7/GPIO_22_A
U27
MSIO16NB3/SPI_1_SDI/GPIO_11_A
U28
VDDI3
U29
VSS
U30
MSIO19NB3/SPI_1_SS7/GPIO_24_A
V1
MSIOD127PB7
V2
MSIOD127NB7
V3
MSIOD126NB7
V4
MSIOD126PB7
V5
MSIOD130PB7
V6
MSIOD129PB7
V7
MSIOD144PB7
V8
MSIOD140PB7
V9
MSIOD145PB6/PCIE_0_REFCLK0P
V10
MSIOD145NB6/PCIE_0_REFCLK0N
V11
VSS
V12
VSS
V13
VSS
V14
VSS
V15
VSS
V16
VSS
V17
VSS
V18
VSS
V19
VSS
V20
VSS
V21
VSS
V22
MSIO12PB3/SPI_0_CLK/USB_XCLK_A
V23
MSIO11PB3/CCC_NE0_I0/I2C_1_SDA/GPIO_0_A/USB_DATA3_A
R e visio n 0
SmartFusion2 System-on-Chip FPGAs
FG896
Pin Number
M2S050T Function
V24
MSIO8PB3/CAN_RX/GPIO_3_A/USB_DATA1_A
V25
VPP
V26
MSIO11NB3/CCC_NE1_I0/I2C_1_SCL/GPIO_1_A/USB_DATA4_A
V27
MSIO17PB3/SPI_1_SDO/GPIO_12_A
V28
MSIO17NB3/SPI_1_SS0/GPIO_13_A
V29
MSIO18PB3/SPI_1_SS4/GPIO_17_A
V30
MSIO18NB3/SPI_1_SS5/GPIO_18_A
W1
MSIOD128NB7
W2
VSS
W3
VDDI7
W4
MSIOD132NB7
W5
MSIOD130NB7
W6
MSIOD133NB7
W7
MSIOD141PB7
W8
MSIOD137PB7
W9
VDDI6
W10
VDDI7
W11
VSS
W12
VSS
W13
VSS
W14
VSS
W15
VSS
W16
VSS
W17
VSS
W18
VSS
W19
VSS
W20
VSS
W21
VDDI3
W22
VDD
W23
MSIO7PB3
W24
MSIO3PB3/USB_DATA0_B
W25
MSIO4PB3/USB_DATA2_B
W26
SC_SPI_SS
W27
MSIO13PB3/SPI_0_SDO/GPIO_6_A/USB_STP_A
W28
MSIO13NB3/SPI_0_SS0/GPIO_7_A/USB_NXT_A
W29
MSIO14PB3/SPI_0_SS4/GPIO_19_A
Revision 0
4- 37
Pin Descriptions
FG896
4- 38
Pin Number
M2S050T Function
W30
MSIO14NB3/SPI_0_SS5/GPIO_20_A
Y1
MSIOD131NB7
Y2
MSIOD131PB7
Y3
VDDI7
Y4
VSS
Y5
VSS
Y6
MSIOD142NB7
Y7
MSIOD142PB7
Y8
PLL5_VSSA
Y9
PLL4_VDDA
Y10
PLL5_VDDA
Y11
VSS
Y12
VSS
Y13
VSS
Y14
VSS
Y15
VSS
Y16
VSS
Y17
VSS
Y18
VSS
Y19
VSS
Y20
VSS
Y21
VDDI4
Y22
MSIO0PB3
Y23
JTAG_TDI/M3_TDI
Y24
VPP
Y25
MSIO3NB3/USB_DATA1_B
Y26
VDDI3
Y27
VSS
Y28
SC_SPI_SDI
Y29
SC_SPI_SDO
Y30
MSIO12NB3/SPI_0_SDI/GPIO_5_A/USB_DIR_A
R e visio n 0
5 – Datasheet Information
Datasheet Categories
Categories
In order to provide the latest information to designers, some datasheet parameters are published before
data has been fully characterized from silicon devices. The data provided for a given device, as
highlighted in the "SmartFusion2 Device Status" table on page VI, is designated as either "Product Brief,"
"Advance," "Preliminary," or "Production." The definitions of these categories are as follows:
Product Brief
The product brief is a summarized version of a datasheet (advance or production) and contains general
product information. This document gives an overview of specific device and family information.
Advance
This version contains initial estimated information based on simulation, other products, devices, or speed
grades. This information can be used as estimates, but not for production. This label only applies to the
DC and Switching Characteristics chapter of the datasheet and will only be used when the data has not
been fully characterized.
Preliminary
The datasheet contains information based on simulation and/or initial characterization. The information is
believed to be correct, but changes are possible.
Production
This version contains information that is considered to be final.
Export Administration Regulations (EAR)
The products described in this document are subject to the Export Administration Regulations (EAR).
They could require an approved export license prior to export from the United States. An export includes
release of product or disclosure of technology to a foreign national inside or outside the United States.
Safety Critical, Life Support, and High-Reliability Applications
Policy
The products described in this advance status document may not have completed the Microsemi
qualification process. Products may be amended or enhanced during the product introduction and
qualification process, resulting in changes in device functionality or performance. It is the responsibility of
each customer to ensure the fitness of any product (but especially a new product) for a particular
purpose, including appropriateness for safety-critical, life-support, and other high-reliability applications.
Consult the Microsemi SoC Products Group Terms and Conditions for specific liability exclusions relating
to life-support applications. A reliability report covering all of the SoC Products Group’s products is
available at http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi also offers a variety
of enhanced qualification and lot acceptance screening procedures. Contact your local sales office for
additional reliability information.
Revision 0
5 -1
Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor
solutions for: aerospace, defense and security; enterprise and communications; and industrial
and alternative energy markets. Products include high-performance, high-reliability analog and
RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and
complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at
www.microsemi.com.
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51700115-0/10.12
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