DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits ID max TC = +25°C RDS(ON) max 6mΩ @ VGS = 10V 65A 9.8mΩ @ VGS = 4.5V 55A 30V Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products 100% Unclamped Inductive Switching – Ensures More Reliability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: PowerDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. PowerDI5060-8 Pin1 Top View Internal Schematic Bottom View S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMT3006LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking T3006LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) T3006LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT3006LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION Continuous Drain Current, VGS = 10V (Note 6) Continuous Drain Current, VGS = 10V (Note 7) TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value 30 ±20 16 12 ID A 65 50 3 100 25 31 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current, L=0.1mH (Note 8) Avalanche Energy, L=0.1mH (Note 8) Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State TC = +25°C Symbol PD RJA PD RJA PD RJC TJ, TSTG Value -55 to +150 Units W °C/W W °C/W W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 — — — — 1 V μA IGSS — — ±100 nA ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) RDS(ON) VSD — 4.8 6.8 0.7 3.0 6 9.8 1.0 V Static Drain-Source On-Resistance 1.0 — — — Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF QRR — — — — — — — — — — — — — 1320 490 77 1.6 22.6 10.6 3.5 3.5 3.5 3.3 13 3.5 14.4 — — — — — — — — — — — — — Gate-Source Leakage Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 2A pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 15V, ID = 20A ns VDD = 15V, VGS = 10V, RG = 3Ω, ID = 20A ns nC IF = 20A, dI/dt = 500A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT3006LPS 25.0 VGS = 3.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 10.0V VGS = 4.5V VGS = 4.0V VGS = 3.0V 20.0 15.0 10.0 VGS = 2.5V 5.0 15 10 125℃ 150℃ 85℃ 5 25℃ -55℃ 0 0.0 0 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS = 4.5V 0.008 0.006 VGS = 10V 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 0.008 150℃ 125℃ 0.006 85℃ 25℃ 0.004 -55℃ 0.002 0 0 5 0.016 0.014 0.012 0.010 ID = 12A 0.008 0.006 0.004 0.002 0.000 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.018 30 0.01 0.5 0.020 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION 30.0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature 2 1.6 VGS = 10V, ID = 12A 1.2 VGS = 4.5V, ID = 12A 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 3 of 7 www.diodes.com March 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.014 0.012 0.01 VGS = 4.5V, ID = 12A 0.008 0.006 VGS = 10V, ID = 12A 0.004 0.002 0 -50 2.4 2.2 2 1.8 1.4 ID = 250μA 1.2 1 0.8 0.6 0.4 -25 -50 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) ID = 1mA 1.6 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 15 TA = 85oC TA = 125oC 10 TA = 25oC 5 TA = 150oC TA = -55oC Ciss 1000 Coss 100 Crss 10 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 1000 10 RDS(ON) Limited PW =10µs ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT ADVANCE INFORMATION DMT3006LPS 6 4 VDS = 15V, ID = 12A 2 0 100 PW =100µs 10 PW =1ms PW =10ms PW =100ms 1 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 0 5 10 15 20 Qg (nC) Figure 11. Gate Charge 25 PW =1µs 0.1 PW =1s 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT3006LPS r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 3℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 1 10 POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 5 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT3006LPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A NEW PRODUCT ADVANCE INFORMATION D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 6 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT3006LPS IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. 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Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMT3006LPS Document number: DS38253 Rev. 2 - 2 7 of 7 www.diodes.com March 2016 © Diodes Incorporated