Renesas NP75N04YUG Mos field effect transistor Datasheet

Preliminary Data Sheet
NP75N04YUG
R07DS0018EJ0100
Rev.1.00
Jul 01, 2010
MOS FIELD EFFECT TRANSISTOR
Description
The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)
• Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP75N04YUG -E1-AY ∗1
NP75N04YUG -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗3
Repetitive Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±75
±225
138
1.0
175
−55 to +175
35
123
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.09
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
NP75N04YUG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
Min
Typ
2.0
23
RDS(on)
3.0
46
3.8
Drain to Source On-state
Resistance ∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
4300
400
250
27
10
66
6
77
20
25
0.93
39
46
Max
1
±100
4.0
4.8
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 37.5 A
VGS = 10 V, ID = 37.5 A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 37.5 A,
VGS = 10 V,
RG = 0 Ω
6450
600
450
54
25
132
15
116
1.5
VDD = 32 V,
VGS = 10 V,
ID = 75 A
IF = 75 A, VGS = 0 V
IF = 75 A, VGS = 0 V,
di/dt = 100 A/μ s
Note: ∗1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 2 of 6
NP75N04YUG
Chapter Title
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
CASE TEMPERATURE
160
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
80
60
40
20
140
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
d
it e
Lim V )
10
=1
ID(pulse)
100
R
G
(V
)
S
PW
=1
10
0μ
s
Power Dissipation Limited
10
11
m
1
110
s
1
m
s
ID - Drain Current - A
1
n
(o
DS
1
0.1
TC = 25°C
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A): 150°C/W
100
10
Rth(ch-C): 1.09°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 3 of 6
NP75N04YUG
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
TA = −55°C
25°C
75°C
125°C
175°C
100
200
ID - Drain Current - A
ID - Drain Current - A
250
150
100
50
10
1
0.1
0.01
VGS = 10 V
Pulsed
0
VDS = 10 V
Pulsed
0.001
0
0.5
1
1.5
1
4
5
6
GATE TO SOURCE THRESHOLD VOLTAGE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
vs. CHANNEL TEMPERATURE
CURRENT
4
3.5
3
2.5
2
1.5
1
VDS = VGS
ID = 250 μA
0.5
0
-100
0
100
100
Ta = −55°C
25°C
75°C
125°C
175°C
10
VDS = 5V
Pulsed
1
200
0.1
1
Tch - Channel Temperature - °C
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
10
VGS = 10 V
Pulsed
5
0
0.1
1
10
100
ID - Drain Current - A
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
2
10
Pulsed
ID = 75 A
37.5 A
15 A
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 4 of 6
NP75N04YUG
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 10 V
ID = 37.5 A
Pulsed
10
5
0
-100
1000
Coss
Crss
100
VGS = 0V
f = 1MHz
10
0
100
200
0.1
Tch - Channel Temperature - °C
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
100
td(on)
tr
10
tf
40
1
100
12
ID = 75 A
35
10
VDD = 32 V
20 V
8V
30
25
8
VGS
20
6
15
4
10
2
VDS
5
0
0.1
1
10
100
0
0
ID - Drain Current - A
20
40
60
80
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
VF(S-D) - Source to Drain Voltage - V
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
1.5
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
1000
1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Drain Current - A
Page 5 of 6
VGS - Gate to Source Voltage - V
15
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
NP75N04YUG
Chapter Title
Package Drawings (Unit: mm)
1.27
8-pin HSON (Mass: 0.13 g TYP.)
1
5
+0.1
5.0 ±0.2
6
4
0.42 −0.05
7
3
6.0 ±0.2
5.15 ±0.2
8
2
0.10 S
3.8 ±0.2
1.45 MAX.
0.73
0.4
0.42 ±0.05
0
+0.05
−0
0.10 M
5.4 ±0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.6 ±0.15
0.8 ±0.15
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 6 of 6
Revision History
NP75N04YUG
Rev.
Date
Page
1.00
Jul 01, 2010
−
Description
Summary
First Eddition Issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
(Note 2)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C.
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0
Similar pages