Advance Technical Information IXFT40N85XHV IXFH40N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 850V = 40A 145m TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 40 A IDM TC = 25C, Pulse Width Limited by TJM 80 A IA TC = 25C 20 A EAS TC = 25C 1.5 J dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 860 W -55 ... +150 C TJ S TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 5.5 Applications V 100 nA RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved 25 A 3 mA 145 m High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100733(6/16) IXFT40N85XHV IXFH40N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 21 S 0.7 3700 pF 3690 pF 57 pF 104 520 pF pF 27 ns 11 ns 63 ns 10 ns 98 nC 23 nC 55 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.145 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 40 A Repetitive, pulse Width Limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 20A, -di/dt = 100A/μs 200 1.6 16.0 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT40N85XHV IXFH40N85X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 90 40 VGS = 10V VGS = 10V 35 80 9V 70 30 I D - Amperes I D - Amperes 60 25 8V 20 15 9V 50 40 8V 30 7V 10 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 40 3.8 VGS = 10V 35 3.0 R DS(on) - Normalized 30 8V I D - Amperes VGS = 10V 3.4 9V 25 20 7V 15 10 6V 2.6 I D = 40A 2.2 1.8 I D = 20A 1.4 1.0 5 0.6 5V 0.2 0 0 4.0 2 4 6 8 10 12 14 -50 16 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized RDS(on) - Normalized 3.5 TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 10 20 30 40 50 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT40N85XHV IXFH40N85X Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 45 50 40 35 40 TJ = 125ºC 25ºC - 40ºC I D - Amperes I D - Amperes 30 25 20 15 30 20 10 10 5 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 140 40 TJ = - 40ºC 35 120 25ºC 100 25 I S - Amperes g f s - Siemens 30 125ºC 20 15 80 60 TJ = 125ºC 40 10 TJ = 25ºC 20 5 0 0 0 5 10 15 20 25 30 35 40 45 50 0.3 55 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 VDS = 425V VGS - Volts Capacitance - PicoFarads I D = 20A 8 I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 10 20 30 40 50 60 70 80 90 100 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT40N85XHV IXFH40N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 50 RDS(on) Limit 45 100µs 40 35 I D - Amperes E OSS - MicroJoules 10 30 25 20 1 1ms 15 0.1 10ms TJ = 150ºC 10 DC TC = 25ºC Fig. 15. Maximum Transient Thermal Impedance Single Pulse 5 0 10 0.01 100 200 300 400 500 600 700 800 10 900 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second © 2016 IXYS CORPORATION, All Rights Reserved 0.1 1 IXFT40N85XHV IXFH40N85X TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline PINS: 1 - Gate 2,4 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_40N85X(S7-D901) 6-20-16