PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Anode 2 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 46,200 PRINCIPAL DEVICE TYPE CMLD2838 BACKSIDE COMMON CATHODE R0 R2 (6-October 2011) w w w. c e n t r a l s e m i . c o m PROCESS CPD30V Typical Electrical Characteristics R2 (6-October 2011) w w w. c e n t r a l s e m i . c o m