BWTECH MSN23P09S 20v p-channel mosfet Datasheet

MSN23P09S
20V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
• Improved dv/dt capability
• Green Device Available
• 100% EAS Guaranteed
• Fast Switching
• RoHS compliant package
Application
• Notebook
• Load Switch
• Battery Protection
• Hand-held Instruments
SOT23-3S Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
-20
V
VGS
Gate to Source Voltage
±10
V
Continuous Drain Current (TC=25°C)
-5.8
Continuous Drain Current (TC=100°C)
-3.7
ID
IDM
1
Drain Current Pulsed
Publication Order Number: [MS69P05]
-23.2
A
A
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
PD
Value
Unit
Power Dissipation (TC = 25°C)
1.56
W
Power Dissipation – Derate above 25°C
0.012
W/°C
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance,Junction-to-Ambient
Min.
--
Value
Typ.
Units
Max.
--
80
°C/W
Electrical Characteristics (TJ=25°C, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
VGS =0 V , ID = 250μA
-60
--
--
V
--
-0.05
--
V/°C
--
--
--
--
△BVDSS
/△TJ
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage,Forward
ID = -1mA, Referenced
to 25°C
VDS = -20 V , TJ= 25°C
VDS = -16 V , TJ= 125°C
VGS = ±10 V , VDS = 0 V
-1
-10
±100
uA
nA
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS(th)
VDS = VGS, ID = 250 uA
-0.3
-0.6
-1
V
VGS = -4.5 V , ID = -4 A
28
33
VGS = -2.5 V , ID = -3 A
37
45
VGS = -1.8 V , ID = -2 A
49
65
2
mV/°C
8.4
S
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-state Resis-tance
△VGS(th)
Gate Threshold Voltage
VGS = VGS, ID = 250 uA
gfs
Forward Transconductance
VDS = -10V , IS = -3 A
Dynamic Characteristics
Symbol
Parameter
Test Conditions
mΩ
Min
Typ.
Max.
Units
VDS = -10 V,
--
16.1
25
nC
VGS = -4.5 V,
--
1.8
3
nC
ID = -4 A
--
3.8
7
nC
2,3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
CISS
Input Capacitance
VGS = 0 V,
--
1440
2100
pF
COSS
Output Capacitance
VDS = -15 V,
--
155
230
pF
CRSS
Reverse Transfer Capacitance
f = 1MHz
--
115
170
pF
2,3
2,3
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source Current
VD=VG=0V
--
--
-5.8
A
ISM
Pulsed Source Current
Force Current
--
--
-23.2
A
VSD
Diode Forward Voltage
IS = -1 A , VGS = 0 V , TJ=25°C
--
--
-1
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MS69P05]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
Similar pages