AP95T06GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
60V
RDS(ON)
8.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
75A
S
Description
AP95T06 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP95T06GP) are available for low-profile
applications.
G D
S
G
D
TO-263(S)
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Drain Current, VGS @ 10V
ID@TC=100℃
Drain Current, VGS @ 10V
3
1
Rating
Units
60
V
+20
V
75
A
66
A
IDM
Pulsed Drain Current
260
A
PD@TC=25℃
Total Power Dissipation
138
W
1.11
W/℃
Linear Derating Factor
4
EAS
Single Pulse Avalanche Energy
450
mJ
IAR
Avalanche Current
30
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
5
Value
Units
0.9
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201501154
AP95T06GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A
-
-
8.5
mΩ
VGS=4.5V, ID=20A
-
-
12
mΩ
V
VGS=0V, ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=10V, ID=45A
-
72
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C) VDS=48V ,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=45A
-
72
115
nC
Qgs
Gate-Source Charge
VDS=48V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
53
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
20
-
ns
tr
Rise Time
ID=45A
-
76
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
67
-
ns
tf
Fall Time
VGS=10V
-
109
-
ns
Ciss
Input Capacitance
VGS=0V
-
5700 9200
pF
Coss
Output Capacitance
VDS=25V
-
900
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
560
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
o
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
60
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T06GS/P-HF
250
120
10V
7.0 V
ID , Drain Current (A)
200
10V
7.0 V
5.0V
4.5V
T C = 150 o C
ID , Drain Current (A)
o
T C = 25 C
5.0V
150
4.5V
100
80
40
V G =3.0V
50
V G =3.0V
0
0
0
3
6
12
8.0V
9
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
11
1.6
I D =45A
V G =10V
I D =20A
o
Normalized RDS(ON)
T C =25 C
10
RDS(ON) (mΩ )
3
V DS , Drain-to-Source Voltage (V)
9
1.2
0.8
8
7
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
50
40
Normalized VGS(th)
IS(A)
1.5
30
o
T j =150 C
o
T j =25 C
20
1.0
0.5
10
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T06GS/P-HF
f=1.0MHz
10
10000
I D = 45 A
C iss
V DS = 30 V
V DS = 38 V
V DS = 48 V
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
1000
C oss
C rss
2
0
100
0
20
40
60
80
100
120
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
ID (A)
100
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
130
VG
V DS =5V
o
T j =25 C
104
ID , Drain Current (A)
o
T j =150 C
QG
4.5V
78
QGS
QGD
52
26
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP95T06GS/P-HF
MARKING INFORMATION
TO-263
95T06GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
95T06GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5