ON NVC3S5A51PLZ P-channel power mosfet Datasheet

NVC3S5A51PLZ
Advance Information
Power MOSFET
60V, 250mΩ, 1.8A, P-Channel
Automotive Power MOSFET designed to minimize gate charge and low on
resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for
automotive applications.
Features
 4V drive
 High ESD protection
 Low On-Resistance
 AEC-Q101 qualified and PPAP capable
 Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
250mΩ@ 10V
ID Max
60V
330mΩ@ 4.5V
1.8A
350mΩ@ 4.0V
ELECTRICAL CONNECTION
P-Channel
Typical Applications
 Reverse Battery Protection
 High Side Load Switch
 Automotive Body Controllers
3
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
1
Parameter
Symbol
Value
Unit
VDSS
Drain to Source Voltage
V
60
VGSS
Gate to Source Voltage
V
20
Drain Current (DC) (Note 2)
A
1.8
ID
Drain Current (DC) (Note 3)
A
1.7
Drain Current (Pulse)
IDP
A
7.2
PW  10s, duty cycle  1%
Power Dissipation
1.2
W
Ta=25C(Note 2)
PD
Power Dissipation
0.8
W
Ta=25C(Note 3)
Junction Temperature and
Tj, Tstg
55 to +175
C
Storage Temperature
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1 : Gate
2 : Source
3 : Drain
2
MARKING
3
1
2
CPH3
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
(Note 2)
Unit
125
C/W
182
C/W
RJA
Junction to Ambient
(Note 3)
Note 2 : Surface mounted on ceramic substrate(900mm2  0.8mm).
Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
December 2015 - Rev. P1
1
Publication Order Number :
NVC3S5A51PLZ/D
NVC3S5A51PLZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 4)
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
VDS=60V, VGS=0V
1
A
Gate to Source Leakage Current
IGSS
VGS=16V, VDS=0V
10
A
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
2.6
V
Forward Transconductance
gFS
VDS=10V, ID=1A
2.7
ID=1A, VGS=10V
190
250
m
ID=0.5A, VGS=4.5V
235
330
m
ID=0.5A, VGS=4V
250
350
m
Static Drain to Source On-State
Resistance
RDS(on)
Input Capacitance
Ciss
Conditions
Value
Parameter
min
typ
60
Unit
V
1.2
262
VDS=20V, f=1MHz
max
S
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
5.1
ns
Rise Time
tr
5.4
ns
Turn-OFF Delay Time
td(off)
34
ns
Fall Time
tf
19
ns
Total Gate Charge
Qg
6.0
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
See Fig.1
VDS=30V, VGS=10V, ID=1.8A
29
pF
19
pF
0.83
nC
1.3
nC
VSD
IS=1.8A, VGS=0V
Forward Diode Voltage
V
0.82
1.2
Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
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2
NVC3S5A51PLZ
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3
NVC3S5A51PLZ
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4
NVC3S5A51PLZ
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
RECOMMENDED
SOLDERING FOOTPRINT
2.4
1.4
0.6
1 : Gate
2 : Source
3 : Drain
0.95
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5
0.95
NVC3S5A51PLZ
ORDERING INFORMATION
Device
NVC3S5A51PLZT1G
Marking
Package
Shipping (Qty / Packing)
WH
CPH3
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NVC3S5A51PLZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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