INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous 0.1 A Collector Power Dissipation @ Ta=25℃ 17 Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -65~150 ℃ PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 5 ℃/W 7.35 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 3V 2.5 V VCB= 30V; IE= 0 0.2 ICBO CONDITIONS MIN TYP. MAX 80 UNIT V Collector Cutoff Current mA VCB= 40V; IE= 0; TC= 150℃ 1.0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V hFE-2 DC Current Gain IC= 1.5A ; VCE= 3V hFE-3 DC Current Gain IC= 4A ; VCE= 3V isc website：www.iscsemi.com 2 2000 750 1000 isc & iscsemi is registered trademark