Fairchild FQI13N50CTU N-channel qfetâ® mosfet 500 v, 13 a, 480 mî© Datasheet

FQI13N50C
N-Channel QFET® MOSFET
500 V, 13 A, 480 mΩ
Features
Description
• 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @VGS = 10 V, ID = 6.5 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
• Low Gate Charge ( Typ. 43 nC)
• Low Crss ( Typ. 20 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
G
DS
G
I2-PAK
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
(Note 1)
FQI13N50CTU
500
Unit
V
13
A
8
A
52
A
± 30
V
mJ
EAS
Single Pulsed Avalanche Energy
(Note 2)
860
IAR
Avalanche Current
(Note 1)
13
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
19.5
4.5
195
1.56
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
FQI13N50CTU
0.64
Unit
°C/W
62.5
°C/W
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
1
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
November 2013
Device Marking
FQI13N50C
Device
FQI13N50CTU
Electrical Characteristics
Symbol
Package
I2-PAK
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
500
--
--
V
--
0.5
--
V/°C
VDS = 500 V, VGS = 0 V
--
--
1
μA
VDS = 400 V, TC = 125°C
--
--
10
μA
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.5 A
--
0.39
0.48
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 6.5 A
--
15
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1580
2055
pF
--
180
235
pF
--
20
25
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13 A,
RG = 25 Ω
(Note 4)
VDS = 400 V, ID = 13 A,
VGS = 10 V
(Note 4)
--
25
60
ns
--
100
210
ns
--
130
270
ns
--
100
210
ns
--
43
56
nC
--
7.5
--
nC
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
13
A
ISM
--
--
52
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 13 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
410
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 13 A,
dIF / dt = 100 A/μs
--
4.5
--
μC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L =6.0 mH, IAS = 13A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
2
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-1
10
-1
10
-1
0
10
2
1
10
10
4
6
Figure 1. On-Region Characteristics
10
Figure 2. Transfer Characteristics
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
8
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
VGS = 10V
1.0
VGS = 20V
0.5
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
ID, Drain Current [A]
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
10
VGS, Gate-Source Voltage [V]
2500
Capacitance [pF]
Ciss
2000
Coss
1500
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 13A
0
-1
10
0
0
10
1
10
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
0
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 6.5 A
0.5
0.0
-100
200
-50
0
100
150
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
14
Operation in This Area
is Limited by R DS(on)
2
12
ID, Drain Current [A]
10 μs
100 μs
10
1 ms
10 ms
100 ms
DC
1
10
0
10
200
o
TJ, Junction Temperature [ C]
10
ID, Drain Current [A]
50
TJ, Junction Temperature [ C]
o
※ Notes :
8
6
4
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
2
0
25
-1
10
0
1
10
2
10
3
10
10
50
75
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
10
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
0
D = 0 .5
0 .2
10
※ N o te s :
1 . Z θ J C (t) = 0 .6 4 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
10
10
PDM
s in g le p u ls e
-2
-5
10
-4
t1
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
4
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
Package Dimensions
FQI13N50C — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
VDS (t)
VDD
DUT
tp
5
Time
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
6
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
7
www.fairchildsemi.com
tm
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I66
©2003 Fairchild Semiconductor Corporation
FQI13N50C Rev. C1
8
www.fairchildsemi.com
FQI13N50C — N-Channel QFET® MOSFET
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