Lyontek LY61L1024LL-15T 128k x 8 bit high speed cmos sram Datasheet

®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 2.0
Rev. 2.1
Rev.2.2
Rev. 2.3
Rev. 2.4
Rev. 2.5
Rev. 2.6
Rev. 2.7
Description
Initial Issue
Delete Icc1 Spec.
Adding -10ns Spec.
Revised VTERM to VT1 and VT2
Revised Test Condition of ISB1/IDR
Added LL Spec.
Revised Test Condition of ICC/ISB
Revised FEATURES & ORDERING INFORMATION Lead
free and green package available to Green package available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Revised PACKAGE OUTLINE DIMENSION in page 9
Added I grade in normal grade
Deleted -10/12/15ns Spec. in LL grade
Added -18ns Spec. In LL grade
Revised PACKAGE OUTLINE DIMENSION in page 10/11
Revised ORDERING INFORMATION in page 12
Add package type: TFBGA 36 ball
Revised ORDERING INFORMATION in page 14~page15
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Jul.25.2004
Sep.21.2004
Aug.30.2005
Feb.2.2009
Feb.2.2009
Apr.17.2009
Dec.18.2009
Apr.27.2010
May.7.2010
Aug.30.2010
Jan.23.2013
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 10/12/15/18ns
„ Low power consumption:
Operating current : 75/70/65/55mA (TYP.)
Standby current : 0.6mA (TYP.)
1μA (TYP.) LL -version
„ Single 3.3V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 2.0V (MIN.)
„ Green package available
„ Package : 32-pin 300 mil SOJ
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
The LY61L1024 is a 1,048,576-bit low power CMOS
static random access memory organized as 131,072
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L1024 is well designed for very high speed
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY61L1024 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
LY61L1024
LY61L1024
LY61L1024(I)
LY61L1024(I)
LY61L1024(LL)
LY61L1024(LLI)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
-40 ~ 85℃
-40 ~ 85℃
0 ~ 70℃
-40 ~ 85℃
Vcc Range
Speed
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
10ns
12/15ns
10ns
12/15ns
18ns
18ns
Power Dissipation
Standby(ISB1,TYP.)
Operating(Icc,TYP.)
0.6mA
75mA
0.6mA
70/65mA
0.6mA
75mA
0.6mA
70/65mA
1µA
55mA
1µA
55mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A16
DECODER
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
128Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A16
Address Inputs
DQ0 – DQ7
Data Inputs/Outputs
CE#, CE2
Chip Enable Inputs
WE#
Write Enable Input
OE#
Output Enable Input
VCC
Power Supply
VSS
Ground
NC
No Connection
COLUMN I/O
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L1024
Rev. 2.7
128K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
PS: All pin out definition are relative with “Lyontek logo” orientation.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
CE2
OE#
WE#
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC
ICC
ICC
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS,
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -4mA
Output Low Voltage
VOL IOL = 8mA
-10
Cycle time = Min.
Average Operating
CE# = VIL and CE2 = VIH, -12
ICC
Power supply Current
II/O = 0mA
-15
Others at VIL or VIH
-18
CE# = VIH or CE2 = VIL
ISB
Others at VIL or VIH
CE# ≧VCC-0.2V
Normal
Standby Power
or CE2≦0.2V
Supply Current
ISB1 CE# ≧VCC-0.2V
LL
or CE2≦0.2V
Others at 0.2V or VCC-0.2V
MIN.
3.0
2.0
- 0.5
-1
TYP.
3.3
-
*4
MAX.
3.6
VCC+0.5
0.6
1
UNIT
V
V
V
µA
-1
-
1
µA
2.2
-
75
70
65
55
0.4
120
100
90
80
V
V
mA
mA
mA
mA
-
3
20
mA
-
0.6
3
mA
-
1
30
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
UNIT
pF
pF
®
LY61L1024
Rev. 2.7
128K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
tRC
10
12
15
18
ns
Address Access Time
tAA
10
12
15
18
ns
Chip Enable Access Time
tACE
10
12
15
18
ns
Output Enable Access Time
tOE
5
6
7
8
ns
Chip Enable to Output in Low-Z
tCLZ*
2
3
4
4
ns
Output Enable to Output in Low-Z tOLZ*
0
0
0
0
ns
Chip Disable to Output in High-Z tCHZ*
5
6
7
8
ns
Output Disable to Output in High-Z tOHZ*
5
6
7
8
ns
Output Hold from Address Change tOH
3
3
3
3
ns
(2) WRITE CYCLE
PARAMETER
SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
10
12
15
18
ns
Address Valid to End of Write
tAW
8
10
12
16
ns
Chip Enable to End of Write
tCW
8
10
12
16
ns
Address Set-up Time
tAS
0
0
0
0
ns
Write Pulse Width
tWP
8
9
10
11
ns
Write Recovery Time
tWR
0
0
0
0
ns
Data to Write Time Overlap
tDW
6
7
8
9
ns
Data Hold from End of Write Time tDH
0
0
0
0
ns
Output Active from End of Write
tOW*
2
3
4
5
ns
Write to Output in High-Z
tWHZ*
6
7
8
9
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
OE#
tOE
tOH
tOHZ
tCHZ
tOLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
CE2
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.WE#, CE# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
VCC for Data Retention
VDR
Data Retention Current
IDR
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
tCDR
TEST CONDITION
CE# ≧ VCC - 0.2V
or CE2 ≦ 0.2V
VCC = 2.0V
CE# ≧ VCC - 0.2V
Normal
or CE2 ≦ 0.2V
VCC = 2.0V
CE# ≧ VCC - 0.2V
LL
or CE2 ≦ 0.2V
others at 0.2V or VCC-0.2V
See Data Retention
Waveforms (below)
tR
MIN.
TYP.
MAX.
UNIT
2.0
-
3.6
V
-
0.006
2
mA
-
0.5
30
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 2.0V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 2.0V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
PACKAGE OUTLINE DIMENSION
32 pin 300mil SOJ Package Outline Dimension
UNIT
SYMBOL
A
A1
A2
B
D
E
E1
e
L
y
INCH(BASE)
MM(REF)
0.148(MAX)
0.025(MIN)
0.123(MAX)
0.018(TYP)
0.825±0.005
0.335(TYP)
0.300±0.005
0.050(TYP)
0.086±0.010
0.003(MAX)
3.759(MAX)
0.635(MIN)
3.124(MAX)
0.457(TYP)
20.955±0.127
8.509(TYP)
7.620±0.127
1.270(TYP)
2.184±0.254
0.076(MAX)
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
32 pin 8mm x 20mm TSOP-I Package Outline Dimension
UNIT
SYM.
A
A1
A2
b
c
D
E
e
HD
L
L1
y
Θ
INCH(BASE)
0.047 (MAX)
0.004 ±0.002
0.039 ±0.002
0.009 ±0.002
0.006 ±0.002
0.724 ±0.008
0.315 ±0.008
0.020 (TYP)
0.787 ±0.008
0.024 ±0.004
0.0315 ±0.004
0.003 (MAX)
o
o
0 ~5
MM(REF)
1.20 (MAX)
0.10 ±0.05
1.00 ±0.05
0.22 ±0.05
0.155 ±0.055
18.40 ±0.20
8.00 ±0.20
0.50 (TYP)
20.00 ±0.20
0.60 ±0.10
0.08 ±0.10
0.08 (MAX)
o
o
0 ~5
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
32 pin 8mm x 13.4mm STSOP Package Outline Dimension
UNIT
SYM.
A
A1
A2
b
c
D
E
e
HD
L
L1
y
Θ
INCH(BASE)
0.049 (MAX)
0.004 ±0.002
0.039 ±0.002
0.009 ±0.002
0.006 ±0.002
0.465 ±0.008
0.315 ±0.008
0.020 (TYP)
0.528±0.008
0.02 ±0.008
0.031 ±0.005
0.003 (MAX)
o
o
0 ~5
MM(REF)
1.25 (MAX)
0.10 ±0.05
1.00 ±0.05
0.22 ±0.05
0.155 ±0.055
11.80 ±0.20
8.00 ±0.20
0.50 (TYP)
13.40 ±0.20.
0.50 ±0.20
0.8 ±0.125
0.076 (MAX)
o
o
0 ~5
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
®
LY61L1024
Rev. 2.7
128K X 8 BIT HIGH SPEED CMOS SRAM
36 ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
ORDERING INFORMATION
Package Type
32-pin 300mil SOJ
Access Time
(Speed)(ns)
10
Power Type
Temperature
Range(℃)
Ultra Low Power 0℃~70℃
-40℃~85℃
12
Ultra Low Power 0℃~70℃
-40℃~85℃
15
Ultra Low Power 0℃~70℃
-40℃~85℃
18
Ultra Low Power 0℃~70℃
-40℃~85℃
32-pin 8mmx20mm
TSOP-I
10
Ultra Low Power 0℃~70℃
-40℃~85℃
12
Ultra Low Power 0℃~70℃
-40℃~85℃
15
Ultra Low Power 0℃~70℃
-40℃~85℃
18
Ultra Low Power 0℃~70℃
-40℃~85℃
Packing
Type
Tube
LY61L1024JL-10
Tape Reel
LY61L1024JL-10T
Tube
LY61L1024JL-10I
Tape Reel
LY61L1024JL-10IT
Tube
LY61L1024JL-12
Tape Reel
LY61L1024JL-12T
Tube
LY61L1024JL-12I
Tape Reel
LY61L1024JL-12IT
Tube
LY61L1024JL-15
Tape Reel
LY61L1024JL-15T
Tube
LY61L1024JL-15I
Tape Reel
LY61L1024JL-15IT
Tube
LY61L1024JL-18LL
Tape Reel
LY61L1024JL-18LLT
Tube
LY61L1024JL-18LLI
Tape Reel
LY61L1024JL-18LLIT
Tube
LY61L1024LL-10
Tape Reel
LY61L1024LL-10T
Tube
LY61L1024LL-10I
Tape Reel
LY61L1024LL-10IT
Tube
LY61L1024LL-12
Tape Reel
LY61L1024LL-12T
Tube
LY61L1024LL-12I
Tape Reel
LY61L1024LL-12IT
Tube
LY61L1024LL-15
Tape Reel
LY61L1024LL-15T
Tube
LY61L1024LL-15I
Tape Reel
LY61L1024LL-15IT
Tube
LY61L1024LL-18LL
Tape Reel
LY61L1024LL-18LLT
Tube
LY61L1024LL-18LLI
Tape Reel
LY61L1024LL-18LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
14
Lyontek Item No.
®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
Package Type
32-pin 8mmx13.4mm
STSOP
Access Time
(Speed)(ns)
10
Power Type
Temperature
Range(℃)
Ultra Low Power 0℃~70℃
-40℃~85℃
12
Ultra Low Power 0℃~70℃
-40℃~85℃
15
Ultra Low Power 0℃~70℃
-40℃~85℃
18
Ultra Low Power 0℃~70℃
-40℃~85℃
36-ball 6mmx8mm
TFBGA
10
Ultra Low Power 0℃~70℃
-40℃~85℃
12
Ultra Low Power 0℃~70℃
-40℃~85℃
15
Ultra Low Power 0℃~70℃
-40℃~85℃
18
Ultra Low Power 0℃~70℃
-40℃~85℃
Packing
Type
Tube
LY61L1024RL-10
Tape Reel
LY61L1024RL-10T
Tube
LY61L1024RL-10I
Tape Reel
LY61L1024RL-10IT
Tube
LY61L1024RL-12
Tape Reel
LY61L1024RL-12T
Tube
LY61L1024RL-12I
Tape Reel
LY61L1024RL-12IT
Tube
LY61L1024RL-15
Tape Reel
LY61L1024RL-15T
Tube
LY61L1024RL-15I
Tape Reel
LY61L1024RL-15IT
Tube
LY61L1024RL-18LL
Tape Reel
LY61L1024RL-18LLT
Tube
LY61L1024RL-18LLI
Tape Reel
LY61L1024RL-18LLIT
Tube
LY61L1024GL-10
Tape Reel
LY61L1024GL-10T
Tube
LY61L1024GL-10I
Tape Reel
LY61L1024GL-10IT
Tube
LY61L1024GL-12
Tape Reel
LY61L1024GL-12T
Tube
LY61L1024GL-12I
Tape Reel
LY61L1024GL-12IT
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LY61L1024GL-15
Tape Reel
LY61L1024GL-15T
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LY61L1024GL-15I
Tape Reel
LY61L1024GL-15IT
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LY61L1024GL-18LL
Tape Reel
LY61L1024GL-18LLT
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LY61L1024GL-18LLI
Tape Reel
LY61L1024GL-18LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
15
Lyontek Item No.
®
LY61L1024
Rev. 2.7
128K X 8 BIT HIGH SPEED CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
16
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