Formosa ESD5LFN5.0 Chip low capacitance tvs diode for esd protection Datasheet

Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
Formosa MS
List
List................................................................................................. 1
Package outline............................................................................... 2
Features..........................................................................................2
Mechanical data...............................................................................2
Maximum ratings ............................................................................. 2
Electrical characteristics...................................................................2
Typical characteristics...................................................................... 3
Rating and characteristic curves........................................................4
Pinning information.......................................................................... 5
Marking........................................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information......................................................................... 6
Reel packing....................................................................................7
Suggested thermal profiles for soldering processes.............................7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Formosa MS
Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
40W Surface Mount TVS Uni-directional
Low Capacitance For ESD Protection -5.0V
Features
Package outline
• 40 Watts peak pulse power (tp=8/20 u s)
• Low capacitance : 0.8pF(Max)
• Low clamping voltage
• Working voltages : 5.0V
• Low leakage current
• Provide transient protection:
•
0603
0.071(1.80)
0.063(1.60)
0.033(0.85)
0.029(0.75)
IEC 61000-4-2 (ESD) Level 4
IEC 61000-4-4 (EFT) 80A (5/50ns)
IEC 61000-4-5 (Surge) (8/20us)
Suffix "-H" indicates Halogen-free parts, ex. ΕSD5LFN5.0-H.
Mechanical data
• Epoxy: UL94-V0 rated flame retardant
• Case: Molded plastic,0603
• Terminals: Golden Plated terminals,
0.016(0.40)Typ.
solderable per MIL-STD-750,Method 2026
0.014(0.35) Typ.
• Marking Code: P
• Weight: Approximated 0.002gram
0.022(0.55)
0.018(0.45)
Schematic & Pin Configuration
0.0236(0.60) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (at T =25 C unless otherwise noted)
o
A
PARAMETER
Symbol
CONDITIONS
Peak pulse power
tp = 8/20us
P PP
Peak pulse current
tp = 8/20us (IEC 61000-4-5)
I PP
ESD per IEC 61000-4-2
Air discharge
MIN.
TYP.
Operating junction temperature range
Storage temperature range
UNIT
40
W
2
A
±16
ESD
Contact discharge
MAX.
±8.0
kV
TJ
-55
+125
O
C
T STG
-55
+150
O
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
Electrical characteristics (at T =25 C unless otherwise noted, V
o
A
Part No.
ESD5LFN5.0
V RWM(V)
I R(uA)
@V RWM
Max.
Max.
5.0
2.0
I T(mA)
V BR(V)
@I T
F
= 1.20V Max. @I F = 15mA)
V C (V)
C J (pF)
@I PP=2.0A @V R=0V,f=1MHz
Min.
Max.
Max.
6.0
20
0.8
1.0
Over voltage available upon request.
O
1. V BR is measured with a pulse test current I T at anambient temperature of 25 C.
2.Surge current waveform per Figure 1.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Formosa MS
Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
Typical characteristics (at T =25 C unless otherwise noted)
o
A
I
IF
V C V BR V RWM
IR
IT
VF
V
I PP
Uni-Directional TVS
V C : Clamping Voltage @ I PP
I PP : Maximum Reverse Peak Pulse Current
V RWM : Maximum Reverse Working voltage
I R : Maximum Reverse Leakage Current @V RWM
V BR : Breakdown voltage @I T
I T : Test Current
P PP : Peak Pulse Power
I F : Forward Current
V F : Forward Voltage @ I F
C J : Max. Capacitance @V R = 0V and f = 1MHz
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Rating and characteristic curves (ESD5LFN5.0)
FIG.2- CLAMPING VOLTAGE VS.
PEAK PULSE CURRENT
100
30
PEAK VALUE I RSM @8us
tr
90
CLAMPING VOLTAGE(V)
% OF PEAK PULSE CURRENT
FIG.1- 8 X 20us PULSE WAVEFORM
PULSE WIDTH(t P)IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8us
80
70
60
HALF VALUE =
50
I RSM
2
@20us
40
30
tP
20
8/20us waveform
25
20
15
10
5
10
0
0
0
20
40
0
80
60
1
3
2
4
PEAK PULSE CURRENT (A)
t, TIME (us)
FIG.3- POWER RATING DERATING CURVE
120
Mounting on glass epoxy PCBs
POWER RATING(%)
100
80
60
40
20
0
0
25
50
75
100
125
150
O
AMBIENT TEMPERATURE( C)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Formosa MS
Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
Pinning information
Pin1
Pin2
Symbol
Simplified outline
Pin
cathode
anode
1
2
1
2
Marking
Marking code
Type number
Cathode band
Marking code
90°rotation
P
P
ESD5LFN5.0
Example
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
PACKAGE
A
B
C
0603
0.032 (0.80)
0.028 (0.70)
0.036 (0.90)
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Formosa MS
Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
Packing information
P0
P1
d
E
F
P
P
A
B
W
P
D2
D1
T
C
W1
D
unit:mm
Symbol
Tolerance
Carrier width
Carrier length
A
0.1
1.00
B
0.1
1.80
Carrier depth
C
0.1
0.65
Sprocket hole
d
0.1
D
D1
D
D1
D2
2.0
min
2.0
min
0.5
1.50
178.00
62.00
13.00
Item
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
0603
E
0.1
1.75
Punch hole position
F
0.05
3.50
Punch hole pitch
P
0.1
4.00
Sprocket hole pitch
P0
0.1
4.00
Embossment center
Overall tape thickness
P1
0.05
2.00
T
0.1
0.23
Tape width
W
0.1
8.00
Reel width
W1
1.0
11.40
Note:Devices are packed in accor dance with EIA standar 481-D and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
Formosa MS
Chip Low Capacitance TVS Diode For ESD Protection
ESD5LFN5.0
Reel packing
PACKAGE
REEL SIZE
0603
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
5,000
4.0
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
INNER
BOX
(m/m)
(pcs)
APPROX.
GROSS WEIGHT
(kg)
50,000
183*123*183
178
382*257*387
400,000
9.0
BOX
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121864
2012/10/25
2015/12/11
D
7
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