HY HY10N65T 650v / 10a n-channel enhancement mode mosfet Datasheet

HY10N65T / HY10N65FT
650V / 10A
650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge & Low CRSS
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charger and SMPS
In compliance with EU RoHs 2002/95/EC Directives
1
G 23
D
S
Mechanical Information
1
G 23
D
S
ITO-220AB
TO-220AB
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2 Drain
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY10N65T
10N65T
TO-220AB
50PCS/TUBE
HY10N65FT
10N65FT
ITO-220AB
50PCS/TUBE
1
Gate
Gate
3 Source
Absolute Maximum Ratings (TC=25OC unless otherwise noted )
P a ra me te r
S ymb o l
HY1 0 N6 5 T
HY1 0 N6 5 F T
Uni ts
D ra i n-S o urc e Vo lta g e
V DS
650
V
Ga te -S o urc e Vo lta g e
V GS
+3 0
V
C o nti nuo us D ra i n C urre nt
T C =2 5 O C
P uls e d D ra i n C urre nt 1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T C =2 5 O C
Avalanche Energy with Single Pulse
IAS=10A, VDD=90V, L=12mΗ
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
ID
10
10
A
ID M
40
40
A
PD
156
1 .2 5
50
0 .4
W
E AS
600
mJ
T J ,T S TG
-5 5 to +1 5 0
O
C
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PA RA M E TE R
S ym b o l
HY1 0 N6 5 T
HY1 0 N6 5 F T
Uni ts
Junction-to-Case Thermal Resistance
R θJC
0 .8
2 .5
O
C /W
Junction-to Ambient Thermal Resistance
R θJA
6 2 .5
100
O
C /W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
PAGE . 1
HY10N65T / HY10N65FT
Electrical Characteristics ( TC=25OC unless otherwise noted )
P a ra m e te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
D ra i n-S o urc e B re a k d o wn Vo lta g e
B V DSS
V GS =0 V, I D =2 5 0 uA
650
-
-
V
Ga te Thre s ho ld Vo lta g e
V GS (th)
V D S =V GS , I D =2 5 0 uA
2 .0
-
4 .0
V
R D S (o n)
VGS= 10V, I D= 5.0A
-
0.84
1.0
Ω
I DSS
VDS=650V, VGS=0V
-
-
10
uA
I GS S
V GS =+3 0 V, V D S =0 V
-
-
+1 0 0
nΑ
-
3 6 .4
48
-
7 .8
-
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urr e nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha r g e
Qg
Ga te -S o urc e C ha rg e
Q
gs
Ga te -D ra i n C ha rg e
Q
gd
-
10.2
-
Turn- On D e la y Ti me
t
d (o n)
-
13.8
18
-
21.6
32
-
52
88
f
-
2 4 .8
36
-
11 5 0
1850
-
145
175
-
4.5
12
Turn- On Ri s e Ti m e
Turn- Off D e la y Ti m e
t
t
r
d (o ff)
Turn- Off F a ll Ti m e
t
Inp ut C a p a c i ta nc e
C
i ss
Outp ut C a p a c i ta nc e
C
oss
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C
rs s
V D S = 5 2 0 V, ID = 1 0 A ,
V GS =1 0 V
VDD=325V, I D =10A
V GS =1 0 V, RG=25Ω
V D S =2 5 V, V GS =0 V
f=1 .0 MH Z
nC
ns
pF
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS
-
-
-
10
A
M a x.P uls e d S o urc e C urre nt
I SM
-
-
-
40
A
D i o d e F o rwa rd Vo lta g e
V SD
IS = 1 0 A , V GS =0 V
-
-
1 .4
V
Re ve rs e Re c o ve ry Ti me
t
-
440
-
ns
Re ve rs e Re c o ve ry C ha rg e
Q
V GS =0 V, IF = 1 0 A
d i /d t=1 0 0 A /us
-
4 .3
-
uC
rr
rr
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
REV1.0 : AUG. 2011
PAGE . 2
HY10N65T / HY10N65FT
Typical Characteristics Curves ( TC=25℃
℃, unless otherwise noted)
100
VGS= 20V~ 7.0V
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
20
15
6.0V
10
5.0V
5
VDS =50V
10
TJ = 125oC
-55oC
0.1
0
0
10
20
30
40
1
50
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
8
3
Ω)
RDS(ON) - On Resistance(
Resistance(Ω
Ω)
RDS(ON) - On Resistance(
Resistance(Ω
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
1.6
1.4
1.2
1
VGS=10V
0.8
VGS = 20V
ID =5.0A
2.5
2
1.5
1
0.5
0
0.6
0
2
4
6
8
10
12
14
3
16
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
2000
12
f = 1MHz
VGS = 0V
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
25oC
1
1500
Ciss
1000
500
Coss
Crss
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV 1.0 : AUG. 2011
30
ID =10A
VDS=520V
10
VDS=325V
8
VDS=130V
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE. 3
HY10N65T / HY10N65FT
Typical Characteristics Curves ( TC=25℃
℃, unless otherwise noted)
1.2
VGS =10 V
ID =5.0A
2.1
BVDSS - Breakdown Voltage
(Normalized)
RDS(ON) - On-Resistance
(Normalized)
2.5
1.7
1.3
0.9
0.5
ID = 250µA
1.1
1
0.9
0.8
-50
-25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.8 Breakdown Voltage
vs Junction Temperature
IS - Source Current (A)
VGS = 0V
10
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4
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