CYSTEKEC DISN0165SP-65-TD-G Switching control diode Datasheet

Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 1/7
CYStech Electronics Corp.
Switching Control Diode
DISN0165SP
Features
 High current capability
 Smoothly soft reverse recovery time (trr)
 Low profile surface mounted package in order to minimize board space
 Pb-free lead plating and halogen-free package
Mechanical data
Case : TO-277 Molded plastic
Epoxy : UL94-V0 rated flame retardant
Terminals : Plated terminals, solderable per MIL-STD-202 method 208
Weight : approx. 0.093 gram
Symbol
Outline
TO-277
DISN0165SP
Cathode
Cathode
2
2
3
1
Not
Connected
Anode
Not
Connected
3
1
Anode
Ordering Information
Device
DISN0165SP-65-TD-G
Package
TO-277
(Pb-free lead plating and halogen-free package)
Shipping
5000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TD : 5000 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
DISN0165SP
Preliminary
CYStek Product Specification
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (TA=25℃, unless otherwise noted)
Parameters
Conditions
Symbol
Value
Units
Repetitive peak reverse voltage
VRRM
650
V
RMS voltage
VRMS
455
V
VR
650
V
IF(AV)
1
A
IFRM
1.57
A
IFSM
14
A
trr
1
μs
Tstg
-55~+150
C
Tj
-55~+150
C
Continuous reverse voltage
Forward rectified current
Repetitive Peak Forward Current
Forward surge current
Maximum reverse recovery time
Single phase half wave,
60Hz @TJ=25°C
Single phase half wave,
60Hz @TJ=25°C
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
IF=1A, dIF/dt=100A/μs
Storage temperature range
Operating junction temperature range
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Power Dissipation @ TC=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
Symbol
Rth,j-c
Value
12.5
39
75
169
10
3.2
1.7
0.74
(Note 1 )
(Note 2 )
Rth,j-a
(Note 3)
(Note 1 )
PD
(Note 2 )
(Note 3 )
Unit
C/W
W
Note: 1. Device mounted on FR-4 PCB, single sided 2 oz. copper, pad dimension 50mm×50mm.
2. Device mounted on FR-4 PCB, single sided 1 oz. copper, pad dimension 25mm×25mm.
3. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad dimension.
Characteristics (TA=25C, unless otherwise noted)
Characteristic
Symbol
Condition
Continuous reverse voltage
VR
IR=100μA
Forward Voltage
VF 1
VF 2
IF=100mA
IF=500mA
VR=540V
VR=540V, TA=125C
VR=1V, f=1MHz
Reverse Leakage Current
IR
Junction Capacitance
CJ
DISN0165SP
Preliminary
Min.
Typ
Max.
Unit
650
-
-
V
-
7
1.1
1.2
100
10
-
V
nA
μA
pF
CYStek Product Specification
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Power Derating Curve
Power Derating Curve
3.5
12
See Note1 on page 2
10
See Note 2 on page 2
2.5
2
Power Dissipation(W)
Power Dissipation(W)
3
See Note 3 on page 2
1.5
1
8
6
4
2
0.5
0
0
0
25
50
75
100 125 150
Ambient Temperature---TA(℃)
175
0
25
50
75
100
125
150
175
Case Temperature---TC ℃)
Reverse Leakage Current vs Reverse Voltage
Forward Current vs Forward Voltage
1000
10000
Reverse Leakage Current---I R (nA)
Instantaneous Forward Current---IF(mA)
125℃
1000
125℃
-40°C
100
25°C
75°C
10
100
75℃
10
25℃
1
-40°C
0.1
Pulse width=300μs
1
0.01
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage---VF(V)
0
100
200
300 400
500
Reverse Voltage---VR (V)
600
700
Junction Capacitance vs Reverse Voltage
Junction Capacitance---C J(pF)
100
10
Tj=25℃, f=1.0MHz
1
0.1
1
10
100
Reverse Voltage---VR(V)
DISN0165SP
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 4/7
Recommended Soldering Footprint
DISN0165SP
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
DISN0165SP
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the
assembly cools.
DISN0165SP
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C211SP
Issued Date : 2017.11.08
Revised Date :
Page No. : 7/7
TO-277 Dimension
Marking:
Cathode
DISN
0165
Anode
□□
Cathode
Date
Code
TO-277 Plastic Surface
Mounted Package
CYStek Package Code: SP
Millimeters
Min.
Max.
1.05
1.15
0.80
0.99
1.70
1.88
0.15
0.35
0.20
0.33
4.00
4.30
3.90
4.05
DIM
A
b1
b2
b3
C
D
D1
Inches
Min.
Max.
0.041
0.045
0.031
0.039
0.067
0.074
0.006
0.014
0.008
0.013
0.157
0.169
0.154
0.159
DIM
D2
E
E1
E2
E3
e
L
Millimeters
Min.
Max.
2.95
3.15
6.40
6.60
5.30
5.45
3.45
3.65
4.20
4.60
1.84 TYP
0.75
0.95
Inches
Min.
Max.
0.116
0.124
0.252
0.260
0.209
0.215
0.136
0.144
0.165
0.181
0.072 TYP
0.030
0.037
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
 Lead : Pure tin plated.
 Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DISN0165SP
Preliminary
CYStek Product Specification
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