Microsemi MG1001-11 Gunn diodes cathode heat sink Datasheet

GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Discrete Frequency: Cathode Heatsink
Features
●
CW Designs to 500 mW
●
Pulsed Designs to 10 W
●
Frequency Coverage Specified from 5.9–95 GHz
●
Low Phase Noise
●
High Reliability
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Copyright  2008
Rev: 2009-01-19
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
(Discrete Frequency: Cathode Heatsink)
C Band Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
MG1001-11
MG1002-11
Operating Current
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
5.9–8.2
50
12
200
400
M11
5.9–8.2
100
12
300
600
M11
MG1003-15
5.9–8.2
250
12
600
1100
M15
MG1004-15
5.9–8.2
500
12
900
1300
M15
X Band Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
MG1005-11
MG1006-11
Operating Current
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
8.2–12.0
50
10
200
400
M11
8.2–12.0
100
10
400
700
M11
MG1007-15
8.2–12.0
250
10
700
1200
M15
MG1008-15
8.2–12.0
500
10
1000
1600
M15
Ku Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1009-11
12.4–18.0
50
8
300
500
M11
MG1010-11
12.4–18.0
100
8
400
800
M11
MG1011-15
12.4–18.0
250
8
800
1200
M15
MG1012-15
12.4–18.0
500
8
1100
1700
M15
K Band Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
MG1013-16
MG1014-16
Operating Current
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
18.0–26.5
50
6
18.0–26.5
100
6
MG1015-16
18.0–26.5
200
MG1016-17
18.0–23.0
400
Max.
(mA)
Package
Outline3
400
600
M16
500
1000
M16
6
800
1400
M16
6
900
1700
M17
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
1
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Ka Band Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
MG1017-16
MG1018-16
Operating Current
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
26.5–40.0
50
4.5
26.5–40.0
100
4.5
MG1019-16
26.5–40.0
200
MG1020-16
26.5–40.0
MG1039-16
MG1040-16
Max.
(mA)
Package
Outline3
300
700
M16
600
1100
M16
5.0
800
1400
M16
250
5.5
800
1600
M16
26.5–35.0
300
5.5
1000
1700
M16
26.5–35.0
350
5.5
1000
1800
M16
U Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1021-16
40.0–60.0
50
4
400
800
M16
MG1022-16
40.0–60.0
100
4
700
1200
M16
MG1023-16
40.0–50.0
150
4
800
1600
M16
V and W Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
MG1036-16
60.5–85.0
10
4.5
MG1037-16
60.5–85.0
50
5
MG1024-16
85–95
10
MG1025-16
85–95
20
MG1038-16
85–95
50
Max.
(mA)
Package
Outline3
400
900
M16
500
1100
M16
4.5
450
1100
M16
4.5
500
1000
M16
5
450
1200
M16
High Power Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Typ.
Operating Current
(Amps.)
Package
Outline3
MG1034-15
9.3
5
35
8
M15
Stacked Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(Watts)
Typ.
Operating
Voltage (V)
Typ.
Operating Current
(Amps)
Number
of Stacks
Package
Outline3
MG1060-15
9.3
10
70
6
2
M15
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
1
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0
300
-50°C
Power Output (mW)
IBias
Ratio
IThreshold
0.8
0.6
0.4
0.2
0
0
1
2
VBias
VThreshold
250
200
90°C
150
100
0
3
2
4
6
8
10
12
Bias Voltage (V)
Ratio
Power Output vs. Bias Voltage
IBias Ratio vs. VBias Ratio
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These products are supplied with a RoHS
complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
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