Kexin MJD13002 Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
MJD13002
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
1
0.55
● Power Switching Applications
+0.1
1.3 -0.1
+0.1
2.4 -0.1
■ Features
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
600
Collector - Emitter Voltage
VCEO
400
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
800
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature Range
Unit
V
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
600
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
400
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 600 V , IE= 0
100
Collector- emitter cut-off current
ICEO
VCE= 400 V , IE= 0
100
IEBO
Emitter cut-off current
V
6
VEB= 6V , IC=0
100
Collector-emitter saturation voltage
VCE(sat)
IC=200 mA, IB=40mA
0.5
Base - emitter saturation voltage
VBE(sat)
IC=200 mA, IB=40mA
1.1
hFE(1)
VCE= 10V, IC= 200mA
9
hFE(2)
VCE= 10V, IC= 0.25 mA
5
DC current gain
Unit
tf
Storage time
ts
IC=1A, IB1=-IB2=0.2A
VCC=100V
Transition frequency
fT
VCE= 10V, IC= 100mA,f=1MHz
V
40
0.5
Fall time
uA
2.5
5
uS
MHz
■ Classification of hfe(1)
Type
MJD13002-A
MJD13002-B
MJD13002-C
MJD13002-D
MJD13002-E
MJD13002-F
Range
9-15
15-20
20-25
25-30
30-35
35-40
Marking
3002A
3002B
3002C
3002D
3002E
3002F
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Transistors
SMD Type
NPN Transistors
MJD13002
■ Typical Characterisitics
Static Characteristic
COLLECTOR CURRENT IC (mA)
250
10mA
9mA
8mA
7mA
150
6mA
5mA
100
4mA
Ta=100℃
Ta=25℃
10
3mA
50
2mA
IB=1mA
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
V BEsat
1000
12
1
14
1
—— IC
V CEsat
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
Ta=25℃
600
Ta=100 ℃
400
200
0
0.1
1
10
100
COLLECTOR CURREMT
IC
——
IC
BE
600
fT
10
TRANSITION FREQUENCY fT (MHz)
T =2
5℃
a
COLLECTOR CURRENT IC (mA)
T =1
00℃
a
400
10
V
1
200
1
800
1000
C ob /Cib
—— V CB /VEB
COLLECTOR POWER DISSIPATION
PC (mW)
f=1MHz
IE=0/IC=0
Ta=25 ℃
100
Cob
10
1
REVERSE VOLTAGE
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10
V
(V)
30
—— IC
6
4
2
40
60
80
COLLECTOR CURRENT
PC
——
IC
a
(mA)
100
120
T
300
200
100
0
1
0.1
(mA)
Ta=25℃
8
40 0
Cib
IC
COMMON EMITTER
VCE=10V
0
20
1200
800
100
COLLECTOR CURREMT
100
10
Ta=25℃
BASE-EMMITER VOLTAGE VBE (mV)
CAPACITANCE C (pF)
IC
100
10
0.5
800
COMMON EMITTER
VCE=10V
1000
——
(mA)
Ta=100 ℃
(mA)
800
0
800
100
IC
β=5
800
0.1
10
COLLECTOR CURRENT
VCE (V)
β=5
2
—— I C
COMMON EMITTER
VCE= 10V
200
0
h FE
100
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN hFE
300
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
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