BSC500N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 200 V RDS(on),max 50 mW ID 24 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type BSC500N20NS3 Package PG-TDSON-8 Marking 500N20NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 24 T C=100 °C 17 Unit A Pulsed drain current2) I D,pulse T C=25 °C 97 Avalanche energy, single pulse E AS I D=22 A, R GS=25 W 120 mJ Reverse diode dv /dt dv /dt 50 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot 96 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/150/56 J-STD20 and JESD22 See figure 3 Rev. 2.0 page 1 2013-02-21 BSC500N20NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.3 minimal footprint - - 75 6 cm2 cooling area3) - - 50 200 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=60 µA 2 3 4 Zero gate voltage drain current I DSS V DS=160 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=160 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=22 A - 42 50 mW Gate resistance RG - 1.9 - W Transconductance g fs 19 37 - S |V DS|>2|I D|R DS(on)max, I D=22 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2013-02-21 BSC500N20NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1190 1580 - 90 120 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 5 - Turn-on delay time t d(on) - 14 - Rise time tr - 5 - Turn-off delay time t d(off) - 28 - Fall time tf - 7 - Gate to source charge Q gs - 5 - Gate to drain charge Q gd - 2 - Switching charge Q sw - 4 - Gate charge total Qg - 15 20 Gate plateau voltage V plateau - 4.4 - Output charge Q oss - 35 47 nC - - 24 A - - 97 - 0.9 1.2 V - 110 - ns - 399 - nC V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=12 A, R G,ext=6 W pF ns Gate Charge Characteristics4) V DD=100 V, I D=12 A, V GS=0 to 10 V V DD=100 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=22 A, T j=25 °C V R=100 V, I F=12A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2013-02-21 BSC500N20NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 30 80 20 ID [A] Ptot [W] 60 40 10 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 1 µs 102 10 µs 100 0.5 ZthJC [K/W] ID [A] 100 µs 1 ms 101 10 ms 0.2 0.1 0.05 10-1 0.02 100 0.01 DC single pulse 10-2 10-1 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.0 10-5 page 4 2013-02-21 BSC500N20NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 80 10 V 70 4.5 V 50 5V 60 ID [A] 40 RDS(on) [mW] 7V 5V 30 50 7V 10 V 40 30 20 20 4.5 V 10 10 0 0 0 1 2 3 4 5 0 10 20 VDS [V] 30 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 80 70 30 60 gfs [S] ID [A] 50 20 40 30 10 20 150 °C 10 25 °C 0 0 0 2 4 6 8 Rev. 2.0 0 25 50 75 ID [A] VGS [V] page 5 2013-02-21 BSC500N20NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=22 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 140 4 120 3.5 600 µA 3 100 80 VGS(th) [V] RDS(on) [mW] 60 µA 2.5 98% 60 typ 2 1.5 40 1 20 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 102 25 °C IF [A] C [pF] 102 150 °C 25°C, 98% 101 150°C, 98% 101 Crss 100 0 40 80 120 160 0.5 1 1.5 2 VSD [V] VDS [V] Rev. 2.0 0 page 6 2013-02-21 BSC500N20NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=12 A pulsed parameter: T j(start) parameter: V DD 100 10 8 160 V VGS [V] IAS [A] 100 V 6 25 °C 10 100 °C 40 V 4 125 °C 2 1 0 1 10 100 1000 0 4 8 12 16 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 230 V GS Qg VBR(DSS) [V] 220 210 V gs(th) 200 190 Q g(th) Q sw Q gs 180 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.0 page 7 2013-02-21 BSC500N20NS3 G PG-TDSON-8: Outline Rev. 2.0 page 8 2013-02-21 BSC500N20NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2013-02-21