Protection Device TVS (Transient Voltage Suppressor) ESD101-B1-02 Series Bi-directional, 5.5 V, 0.1 pF, 0201, 0402, RoHS and Halogen Free compliant ESD101-B1-02ELS ESD101-B1-02EL Data Sheet Revision 1.3, 2015-07-13 Final Power Management & Multimarket Edition 2015-07-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD101-B1-02 Series Product Overview 1 Product Overview 1.1 Features • • • • • • • ESD / transient protection of high speed data lines according to: – IEC61000-4-2 (ESD): ±14 kV (air), ±12 kV(contact) – IEC61000-4-4 (EFT): ±1.5 kV / ±30 A (5/50 ns) – IEC61000-4-5 (surge): ±2 A (8/20 μs) Bi-directional working voltage up to: VRWM = ±5.5 V Extremely low capacitance CL = 0.1 pF (typical) at f = 1 GHz Very low clamping voltage: VCL = 30 V (typical) at ITLP = 16 A Very low reverse current: IR < 0.1 nA Very low dynamic resistance: RDYN = 1.5 Ω (typical) Pb-free package (RoHS compliant) 1.2 • Application Examples [3] Tailored for ESD Protection of capacitance-susceptible application like – Super high speed interface – RF antenna 1.3 Product Description Pin 1 marking (lasered) Pin 1 Pin 1 Pin 2 Pin 2 PinConf_and_SchematicDiag.vsd Figure 1 Pin configuration and Schematic diagram Table 1 Part Information Type Package Configuration Marking code ESD101-B1-02ELS TSSLP-2-4 1 line, bi-directional R ESD101-B1-02EL TSLP-2-20 1 line, bi-directional R Final Data Sheet 3 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Maximum Ratings 2 Maximum Ratings Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified1) Parameter Symbol 2) Values Unit ESD air discharge ESD contact discharge2) VESD ±14 ±12 kV Peak pulse power PPK 30 W Peak pulse current3) IPP ±2 A Operating temperature TOP -55 to 125 °C Storage temperature Tstg -65 to 150 °C 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 Electrical Characteristics at TA = 25 °C, unless otherwise specified Figure 2 ( )!! %! )* ! +! )#! % ##%# !"!!""!" #$%"&!'!! Definitions of electrical characteristics Final Data Sheet 4 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Electrical Characteristics at TA = 25 °C, unless otherwise specified Table 3 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Reverse working voltage VRWM Values 1) Unit Min. Typ. Max. -5.5 – 5.5 Trigger voltage Vt1 6.1 – – Holding voltage Vh 6.1 7.0 7.9 Reverse leakage current IR – <0.1 20 Note / Test Condition V IT = 10 mA nA VR = 5.5 V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz 1) Device is electrically symmetrical Table 4 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol CL Line capacitance LS Serie inductance Table 5 Values Min. Typ. Max. – – 0.2 – 0.1 – – – 0.2 0.4 – – VR = 0V, f = 1 GHz nH ESD101-B1-02ELS ESD101-B1-02EL ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol 2) VCL Clamping voltage 3) Clamping voltage Dynamic resistance 2) RDYN Values Unit Note / Test Condition V ITLP = 8 A, tp = 100 ns Min. Typ. Max. – 18 – – 30 – ITLP = 16 A, tp = 100 ns – 9 – IPP = 1 A, tp = 8/20 μs – 13 – IPP = 2 A, tp = 8/20 μs – 1.5 – Ω tp = 100 ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps. 3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Final Data Sheet 5 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical characteristics diagrams at TA = 25°C, unless otherwise specified 10-3 10-4 -5 10 10-6 -7 IR [A] 10 10-8 -9 10 10-10 -11 10 -12 10 Figure 3 0 1 2 3 VR [V] 4 5 Reverse leakage current: IR = f(VR) 150 125 CL [fF] 100 75 50 25 0 Figure 4 -5 -4 -3 -2 -1 0 VR [V] 1 2 3 4 5 Line capacitance CL = f(VR), f = 1 GHz Final Data Sheet 6 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Typical Characteristics Diagrams 350 Scope: 20 GS/s 300 VCL [V] 250 200 VCL-max-peak = 300 [V] 150 VCL-30ns-peak = 25 [V] 100 50 0 -50 -50 Figure 5 0 50 100 150 200 tp [ns] 250 300 350 400 450 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 50 Scope: 20 GS/s 0 -50 VCL [V] -100 -150 VCL-max-peak = -304 [V] -200 VCL-30ns-peak = -19 [V] -250 -300 -350 -50 Figure 6 0 50 100 150 200 tp [ns] 250 300 350 400 450 Clamping voltage (ESD): VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 Final Data Sheet 7 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Typical Characteristics Diagrams 10 ESD101-B1-02Eseries RDYN 15 7.5 RDYN = 1.5 Ω ITLP [A] 10 5 5 2.5 0 0 -5 -2.5 RDYN = 1.5 Ω -10 -5 -15 -20 -40 Equivalent VIEC [kV] 20 -7.5 -30 -20 -10 0 10 20 30 -10 40 VTLP [V] Figure 7 Clamping voltage (TLP): ITLP = f(VTLP) [1], pin 1 to pin 2 Final Data Sheet 8 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Typical Characteristics Diagrams 2.5 2 1.5 1 IPP [A] 0.5 0 -0.5 -1 -1.5 -2 -2.5 -15 Figure 8 -10 -5 0 VCL [V] 5 10 15 Clamping voltage (Surge): IPP = f(VCL) [1], pin 1 to pin 2 Final Data Sheet 9 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Typical Characteristics Diagrams Insertion Loss [dB] 0 -1 -2 -3 -4 -5 0.1 1 10 f [GHz] Figure 9 Insertion loss vs. frequency in a 50 Ω system (ESD101-B1-02ELS) Final Data Sheet 10 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Package Information 5 Package Information 5.1 TSSLP-2-4 Top view Bottom view 0.31 +0.01 -0.02 0.32 ±0.05 0.355 0.62 ±0.05 2 Pin 1 marking 0.2 ±0.035 1) 1 0.26 ±0.035 1) 0.05 MAX. 1) Dimension applies to plated terminals TSSLP-2-3, -4-PO V01 TSSLP-2-4 Package outline (dimension in mm) 0.19 0.24 Solder mask 0.19 0.57 0.62 Copper 0.19 0.27 0.14 0.32 0.24 Figure 10 Stencil apertures TSSLP-2-3, -4-FP V02 Figure 11 TSSLP-2-4 Footprint (dimension in mm) marking 0.35 Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 8 Ey 4 Pin 1 marking Figure 12 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Ex TSSLP-2-3, -4-TP V03 TSSLP-2-4 Packing (dimension in mm) 1 Type code Pin 1 marking Figure 13 TSSLP-2-4 Marking example Table 1 “Part Information” on Page 3 Final Data Sheet 11 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Package Information 5.2 TSLP-2-20 Top view Bottom view 0.31 +0.01 -0.02 0.6 ±0.05 1±0.05 2 1 0.25 ±0.035 1) 0.65 ±0.05 0.05 MAX. 0.5 ±0.035 1) Pin 1 marking 1) Dimension applies to plated terminals TSLP-2-19, -20-PO V01 TSLP-2-20 Package outline (dimension in mm) 0.28 0.35 Solder mask 0.38 0.93 1 Copper 0.28 0.45 0.3 0.6 0.35 Figure 14 Stencil apertures TSLP-2-19, -20-FP V01 Figure 15 TSLP-2-20 Footprint (dimension in mm) 0.4 1.16 Pin 1 marking 8 4 0.76 TSLP-2-19, -20-TP V02 Figure 16 TSLP-2-20 Packing (dimension in mm) Type code 12 Pin 1 marking TSLP-2-19, -20-MK V01 Figure 17 TSLP-2-20 Marking example Table 1 “Part Information” on Page 3 Final Data Sheet 12 Revision 1.3, 2015-07-13 ESD101-B1-02 Series References References [1] Infineon Technologies AG, “Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology”, Application Note AN210, RF and Protection Devices, April 22, 2010, Rev.1.0 [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages [3] Infineon AC - Application Note AN327: ESD101-B1 / ESD103-B1, Bi-directional Ultra Low Capacitance Transient Voltage Suppression Diodes for High Power RF Applications. Final Data Sheet 12 Revision 1.3, 2015-07-13 ESD101-B1-02 Series Revision History: Rev. .1.2, 2013-07-23 Page or Item Subjects (major changes since previous revision) Revision 1.3, 2015-07-13 All Layout changes 5 Table 3-1) updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Final Data Sheet 13 Revision 1.3, 2015-07-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG