Kexin MMBT3904DW Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
MMBT3904DW
(KMBT3904DW)
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual NPN Transistors
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
40
Emitter - Base Voltage
VEBO
5
Unit
V
Collector Current - Continuous
IC
200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature range
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE=0
60
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB=0
40
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC=0
5
Typ
Max
V
Collector-base cut-off current
ICBO
VCB= 60 V , IE=0
50
Collector- emittercut-off current
ICEX
VCE= 30 V , VEB(OFF)= -3V
50
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
DC current gain
VEB= 5V , IC=0
50
IC=10 mA, IB=1mA
0.2
IC=50 mA, IB=5mA
0.3
IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
hFE(1)
VCE= 1V, IC= 0.1mA
40
VCE= 1V, IC= 10mA
100
hFE(3)
VCE= 1V, IC= 50mA
60
td
Rise time
tr
Storage time
ts
Fall time
tf
VCE=5V,Ic=0.1mA,f=1KHz,RS=1KΩ
Collector output capacitance
Cob
VCB= 5V, IE= 0,f=1MHz,f=100MHz
fT
VCE= 20V, IC= 10mA,f=100MHz
300
35
200
VCC=3V, IC=10mA , IB1=-IB2=1mA
NF
V
35
VCC=3V, VBE= - 0.5V
IC=10mA , IB1=-IB2=1mA
Noise figure
0.85
nA
0.95
hFE(2)
Delay time
Transition frequency
0.65
Unit
ns
50
5
4
300
dB
pF
MHz
■ Marking
Marking
K6N
www.kexin.com.cn
1
Similar pages