PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO = -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -20 A Continuous Collector Current IC -5 A Base Current IB -500 mA 2.5 W -55 to +150 °C Power Dissipation at T amb=25°C † Operating and Storage Temperature Range P tot T j:T stg †The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches by 2 inches FZT1147A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). VALUE PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -15 -35 V IC=-100µA Collector-Emitter Breakdown Voltage VCES -12 -25 V IC=-100µA Collector-Emitter Breakdown Voltage VCEO -12 -25 V IC=-10mA * Collector-Emitter Breakdown Voltage VCEV -12 -25 V IC=-100µA, VEB=+1V -5 -8.5 V IE=-100µA Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current ICBO -0.3 -100 nA VCB=-12V Emitter Cut-Off Current IEBO -0.3 -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -0.3 -100 nA VCE=-10V Collector-Emitter Saturation Voltage VCE(sat) -25 -70 -90 -115 -250 -50 -110 -130 -170 -400 mV mV mV mV mV IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -950 -1050 mV IC=-5A, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -905 -1000 mV IC=-5A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 115 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance Ccb 80 pF VCB=-10V, f=1MHz Switching Times ton 150 ns IC=-4A, IB=-40mA, VCC=-10V toff 220 ns IC=-4A, IB=±40mA, VCC=-10V 270 250 200 150 90 450 400 340 245 145 50 IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, VCE=-2V* IC=-10A, VCE=-2V* IC=-20A, VCE=-2V* 850 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. FZT1147A TYPICAL CHARACTERISTICS 1.0 1.0 +25°C IC/IB=100 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.6 -55°C +25°C +100°C 0.4 0.2 0.2 0 0 1m 10m IC - 100m 1 100 10 10m IC - 1m Collector Current (A) VCE(sat) v IC 800 100m 1 10 100 Collector Current (A) VCE(sat) v IC 1.8 IC/IB=100 VCE=2V 600 VBE(sat) - (V) hFE - Typical Gain 1.5 +100°C +25°C -55°C 400 1.2 0.9 0.6 200 -55°C +25°C +100°C 0.3 0 0 1m 10m IC - 100m 1 10 1m 100 Collector Current (A) 10m IC - hFE v IC 1.5 1 10 100 100 IC - Collector Current (A) VCE=2V VBE(on) - (V) 100m Collector Current (A) VBE(sat) v IC 1.0 0.5 -55°C +25°C +100°C 0 1m 10m 100m 1 10 IC - Collector Current (A) VBE(on) v IC 100 10 DC 1s 100ms 10ms 1ms 100us 1 100m 100m 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area FZT1147A THERMAL CHARACTERISTICS D=1 D=t1 tP t1 40 tP 30 20 D=0.5 10 D=0.05 D=0.2 D=0.1 Single Pulse 0 100µs 1ms 10ms 100ms 1s 10s 100s Pulse Width Transient Thermal Resistance Max Power Dissipation - (Watts) Thermal Resistance (°C/W) 4 50 3 2 1 0 0 20 40 60 80 100 120 140 160 T - Ambient Temperature (°C) Derating curve SPICE PARAMETERS * ZETEX FZT1147A Spice model Last revision 10/12/96 * .MODEL FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 + BF=500 VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 + BR=90 VAR=3.1 IKR=1.2 RE=15e-3 RB=145e-3 + RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 + MJC=0.4048 TF=1.2e-9 TR=13e-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.