E-CMOS ECGBL03CG Low capacitance tvs diode array Datasheet

Low Capacitance TVS Diode Array
ECGLBxxCG
Applications
◆
Cell Phone Handsets and Accessories
◆
Microprocessor based equipment
◆
Personal Digital Assistants (PDA’s)
◆
Notebooks, Desktops, and Servers
◆
Portable Instrumentation
◆
Peripherals
◆
USB Interface
IEC Compatibility
◆
IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) : 3.3 ~ 15V
◆
IEC61000-4-2 (ESD) ±25kV (air), ±15kV (contact) : 24V
◆
IEC61000-4-4 (EFT) 40A (5/50ηs)
Features
◆
450 Watts Peak Pulse Power per Line (tp=8/20µs)
◆
Protects one I/O line (bidirectional)
◆
Low clamping voltage
◆ Working voltages: 3.3V, 5V, 8V, 12V, 15V, 24V
◆
Low leakage current
Mechanical Characteristics
◆
JEDEC SOD-323 Package
◆
Molding Compound Flammability Rating : UL 94V-O
◆ Weight 5 Millgrams (Approximate)
◆
Quantity Per Reel : 3,000pcs
◆
Reel Size : 7 inch
◆
Lead Finish : Lead Free
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 3
4F13N-Rev. F001
ECGLBxxCG
Low Capacitance TVS Diode Array
Device Characteristics
MAXIMUM RATINGS (@ 25℃ Unless Otherwise Specified)
PARAMETER
SYMBOL
VALUE
UNITS
Peak Pulse Power (tp=8/20µs waveform)
PPP
450
Watts
Lead Soldering Temperature
TL
260 (10 sec.)
℃
Operating Temperature Range
TJ
-55 ~ 150
℃
TSTG
-55 ~ 150
℃
Storage Temperature Range
ELECTRICAL CHARACTERISTICS PER LINE (@ 25℃ Unless Otherwise Specified)
PART NUMBER
DEVICE
MARKING
VRWM
VB
(V)
(V)
(max.)
(min.)
IT
(mA)
VC
VC
IR
CT
@1A
(max.)
(µA)
(pF)
(max.)
(@A)
(max.)
(typ.)
ECGBL03CG
A3
3.3
4.0
1
5.8
18.0
25
1
3
ECGBL05CG
A5
5.0
6.0
1
9.8
21.0
23
1
3
ECGBL08CG
A8
8.0
8.5
1
13.4
23.0
20
1
3
ECGBL12CG
AD
12.0
13.3
1
19.0
30.0
14
1
3
ECGBL15CG
AE
15.0
16.7
1
24.0
39.0
10
1
3
ECGBL24CG
AH
24.0
26.7
1
43.0
56.0
7
1
3
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 3
4F13N-Rev. F001
Low Capacitance TVS Diode Array
ECGLBxxCG
SOD323 Package Outline & Dimensions
SOLDERING FOOTPRINT
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 3
4F13N-Rev. F001
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