IPC70N04S5L-4R2 OptiMOS™-5 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.2 mW ID 70 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8-33 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPC70N04S5L-4R2 PG-TDSON-8-33 5N04L4R2 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25 °C, V GS=10 V 70 T C=100°C, V GS=10V2) 53 Unit A Pulsed drain current2) I D,pulse T C=25°C 280 Avalanche energy, single pulse2) E AS I D=35A 32 mJ Avalanche current, single pulse4) I AS - 70 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 50 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2016-12-06 IPC70N04S5L-4R2 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 3.0 Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) - - 50 40 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=17µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 - - 100 V DS=40V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=35A - 4.4 6.1 mW V GS=10V, I D=35A - 3.4 4.2 Rev. 1.0 page 2 2016-12-06 IPC70N04S5L-4R2 Parameter Symbol Values Conditions Unit min. typ. max. - 1230 1600 - 280 364 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 20 30 Turn-on delay time t d(on) - 3 - Rise time tr - 2 - Turn-off delay time t d(off) - 11 - Fall time tf - 6 - Gate to source charge Q gs - 3.5 4.6 Gate to drain charge Q gd - 4.7 7.1 Gate charge total Qg - 22 30 Gate plateau voltage V plateau - 3 - V - - 70 A - - 280 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=70A, R G,ext=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=70A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=35A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 30 - ns Reverse recovery charge2) Q rr - 18 - nC T C=25°C 1) Current is limited by package; with an R thJC = 3K/W the chip is able to carry 75A at 25°C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) The device is tested in production with an avalanche current of 60 A. Rev. 1.0 page 3 2016-12-06 IPC70N04S5L-4R2 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 60 80 70 50 60 40 ID [A] Ptot [W] 50 30 40 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 1 µs 100 10 µs 0.1 ZthJC [K/W] ID [A] 100 100 µs 150 µs 0.05 10-1 0.01 single pulse 10 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2016-12-06 IPC70N04S5L-4R2 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 280 24 22 10 V 240 20 2.5 V 18 200 2.75 V 160 RDS(on) [mW] 16 ID [A] 3.5 V 120 3V 14 12 3.5 V 10 8 80 3V 40 6 2.75 V 4 2.5 V 2 0 0 1 2 10 V 0 3 0 40 80 VDS [V] 120 160 200 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 35 A; V GS = 10 V parameter: T j 8 240 7 200 6 RDS(on) [mW] 280 ID [A] 160 120 80 4 3 40 175 °C 2 25 °C -55 °C 0 1.5 2 2.5 3 3.5 4 VGS [V] Rev. 1.0 5 1 -60 -20 20 60 100 140 180 Tj [°C] page 5 2016-12-06 IPC70N04S5L-4R2 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2 1.5 Ciss C [pF] 170 µA VGS(th) [V] 17 µA 103 Coss 1 102 0.5 Crss 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 100 °C 150 °C 102 IF [A] IAV [A] 10 175 °C 175 °C 101 25 °C 25 °C 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 0.1 0.1 1 10 100 1000 tAV [µs] page 6 2016-12-06 IPC70N04S5L-4R2 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 46 70 60 44 17.5 A VBR(DSS) [V] EAS [mJ] 50 40 30 35 A 42 40 20 38 70 A 10 36 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD 10 V GS 9 Qg 8 7 VGS [V] 6 5 8V 32 V V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 5 10 15 Q gd 20 Qgate [nC] Rev. 1.0 page 7 2016-12-06 IPC70N04S5L-4R2 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2016 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2016-12-06 IPC70N04S5L-4R2 Revision History Version Date Changes Revision 1.0 06.12.2016 Final Data Sheet Rev. 1.0 page 9 2016-12-06