UN ESD05V88D-2C Transient voltage suppressors for esd protection Datasheet

Transient Voltage Suppressors for ESD Protection
SOT-883
The ESD5.0V88D-2C is ultra low capacitance TVS arrays
designed to protect high speed data interfaces. This
series has been specifically designed to protect sensitive
components which are connected to high-speed data and
transmission lines from over-voltage caused by ESD
(electrostatic discharge), CDE (Cable Discharge Events),
and EFT (electrical fast transients).

39 Watts Peak Pulse Power per Line (tp=8/20µs)

Protects two birectional I/O lines

Low clamping voltage

Working voltages : 5V

Low leakage current

Provides ESD protection to
IEC61000-4-2(ESD):
±10kV (air discharge)
±10kV (contact discharge);

Cell Phone Handsets and Accessories

Microprocessor based equipment

SOT-883 (1.0x0.6x0.5mm) Package

Personal Digital Assistants (PDA’s)

Mounting position: Any
◆
Notebooks, Desktops, and Servers

Quantity Per Reel : 10,000pcs
◆
Portable Instrumentation

Reel Size : 7 inch
◆
Peripherals

Lead Finish : Lead Free
◆
Pagers

Device Marking: HD
Symbol
Parameter
Value
Units
Ppp
Peak Pulse Power (tp=8/20µs waveform)
39
Watts
TJ
Operating Junction Temperature Range
-40 to +150
ºC
Storage Temperature Range
-55 to +150
ºC
260
ºC
3
A
TSTG
TL
IPP (1)
Soldering Temperature, T max = 10s
Peak pulse current
Notes: 1.Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Revision December 18, 2013
1/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
Characteristics
Reverse Working
Voltage
Reverse Breakdown
Voltage
Reverse Leakage
Current
Positive Clamping
Voltage
Junction capacitance
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VRWM
--
--
--
5.0
V
5.6
--
8.0
V
VRWM =3.3V;T=25°C
--
--
1.0
μA
VC1
IPP =3A,TP =8/20μS;
--
--
13.0
V
CJ2
VR =0V,f=1MHz;
--
--
3
pF
VBR
IR
Fig1.
8/20μs Pulse Waveform
Fig3.
Power Derating Curve
Revision December 18, 2013
IT=1mA
Fig2. Capacitance Characteristics
Fig4. VC ─ IPP
2/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
0.026(0.65)
0.022(0.55)
0.041(1.05)
0.037(0.95)
0.004(0.10)
0.000(0.01)
0.022(0.55)
0.018(0.45)
0.018(0.45)
REF.
0.015(0.37)
0.011(0.27)
0.012(0.30)
0.008(0.20)
0.002(0.05)
REF.
0.002(0.05)
REF.
0.018(0.45) 0.015(0.37)
0.011(0.27)
REF.
0.016(0.40)
0.012(0.30)
0.025(0.64)
REF.
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Suggested PAD Layout
(0.008)0.20
0.022(0.55)
Revision December 18, 2013
3 X 0.15
0.014(0.35)
2 X 0.20
0.014(0.35)
1.00 X 0.60 PKG.
2 X 0.50
3/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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