CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N01Q8 Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7 BVDSS RDSON(MAX) ID 20V 30mΩ 6A Description The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Low voltage drive (2.5V) • Pb-free lead plating package Symbol Outline MTN4N01Q8 SOP-8 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTP4N01Q8 SOP-8 (Pb-free lead plating package) 3000 pcs / Tape & Reel MTN4N01Q8 CYStek Product Specification Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 2/7 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V Continuous Drain Current @ TA=70°C, VGS=4.5V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction-to-ambient, max Operating Junction and Storage Temperature Range VDS VGS ID ID IDM PD Rth,j-a Tj, Tstg Limits 20 ±10 6 *1 4.8 *1 20 *2 2.5 0.02 50 *1 -55~+150 Unit V V A A A W W/°C °C/W °C Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 20 0.6 - 10 - 1.2 ±100 1 25 30 40 V V S nA μA μA mΩ mΩ VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =2.5V, ID=2A VGS=±10 VDS =20V, VGS =0 VDS =16V, VGS =0, Tj=70°C VGS =4.5V, ID=4.2A VGS =2.5V, ID=2A 11 2 3 13 35 45 50 870 260 60 16 1200 - - 1.2 Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD - nC ID=4.2A, VDS=12V, VGS=4.5V ns VDS=12V, ID=4.2A, VGS=4.5V, RG=2.3Ω pF VGS=0V, VDS=10V, f=1MHz V IS=1.7A, VGS=0V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4N01Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 3/7 Characteristic Curves MTN4N01Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 4/7 Characteristic Curves(Cont.) MTN4N01Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN4N01Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN4N01Q8 CYStek Product Specification Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 7/7 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name Date Code H 4N01SC □□□□ J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1890 0.2007 0.1496 0.1654 0.2283 0.2441 0.0480 0.0519 0.0138 0.0193 0.1472 0.1527 0.0531 0.0689 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.80 5.10 3.80 4.20 5.80 6.20 1.22 1.32 0.35 0.49 3.74 3.88 1.35 1.75 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0098 REF 0.0118 0.0354 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.25 REF 0.30 0.90 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4N01Q8 CYStek Product Specification