BLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 108 50 1200 28.5 75 Test signal 1.2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1200 W Power gain = 28.5 dB Efficiency = 75 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 110 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications FM transmitter applications BLF178P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 2 1 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF178P Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF178P Product data sheet Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage 0.5 +11 V ID drain current - 88 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 Min Max Unit - 110 V © NXP B.V. 2012. All rights reserved. 2 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) Zth(j-c) Conditions thermal resistance from junction to case Tj = 150 C transient thermal impedance from junction to case Tj = 150 C; tp = 100 s; = 20 % [1] Tj is the junction temperature. [2] Rth(j-c) is measured under RF conditions. [3] See Figure 1. Typ Unit [1][2] 0.14 K/W [3] 0.04 K/W 001aak924 0.18 Zth(j-c) (K/W) (7) 0.12 (6) 0.06 (5) (3) (4) (2) (1) 0 10−7 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a function of pulse duration 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. BLF178P Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA 110 - - V VDS = 10 V; ID = 500 mA 1.25 1.7 2.25 V VGS(th) gate-source threshold voltage VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.8 1.3 1.8 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 3 of 13 BLF178P NXP Semiconductors Power LDMOS transistor Table 6. DC characteristics …continued Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 58 71 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 16.66 A - 0.07 - Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 3 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 403 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 138 - pF Table 7. RF characteristics Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL = 1200 W 27 28.5 31 dB Gp power gain RLin input return loss PL = 1200 W - 16 12 dB D drain efficiency PL = 1200 W 71 75 - % 001aaj113 900 Coss (pF) 750 600 450 300 150 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 2. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF178P is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 108 MHz. BLF178P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 4 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 7. Test information 7.1 Impedance information Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f ZS ZL MHz 108 3.91 j3.56 3.59 j1.73 drain ZL gate ZS 001aaf059 Fig 3. Definition of transistor impedance 7.2 RF performance The following figures are measured in a class-AB production test circuit. 7.2.1 1-Tone CW pulsed aaa-002242 31 Gp (dB) ηD (%) Gp 29 aaa-002243 66 80 PL (dBm) 64 60 Ideal PL (2) 27 62 40 ηD (1) PL 25 60 20 23 100 300 500 700 900 1100 58 0 1300 1500 PL (W) 29 31 33 35 Pi (dBm) VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. (1) PL(1dB) = 60.8 dBm (1214 W) (2) PL(3dB) = 61.2 dBm (1319 W) Fig 4. Power gain and drain efficiency as function of output power; typical values BLF178P Product data sheet Fig 5. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 5 of 13 BLF178P NXP Semiconductors Power LDMOS transistor aaa-002244 32 Gp (dB) aaa-002245 80 ηD (%) 30 60 (5) (4) 28 (3) 40 (5) (2) (4) (1) (3) (2) 26 20 (1) 24 100 300 500 700 900 1100 0 100 1300 1500 PL (W) VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %. 300 500 (1) IDq = 0 mA (2) IDq = 20 mA (2) IDq = 20 mA (3) IDq = 40 mA (3) IDq = 40 mA (4) IDq = 80 mA (4) IDq = 80 mA (5) IDq = 160 mA (5) IDq = 160 mA Power gain as a function of output power; typical values BLF178P Product data sheet 900 1100 1300 1500 PL (W) VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %. (1) IDq = 0 mA Fig 6. 700 Fig 7. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 6 of 13 BLF178P NXP Semiconductors Power LDMOS transistor aaa-002246 32 Gp (dB) 30 aaa-002247 90 ηD (%) (1) (2) (3) (4) (5) (6) (7) (8) 70 28 26 50 (8) (7) (6) (5) 24 (4) 30 (3) 22 (2) (1) 10 20 0 200 400 600 800 1000 1200 1400 PL (W) 0 IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. 200 (1) VDS = 15 V (2) VDS = 20 V (2) VDS = 20 V (3) VDS = 25 V (3) VDS = 25 V (4) VDS = 30 V (4) VDS = 30 V (5) VDS = 35 V (5) VDS = 35 V (6) VDS = 40 V (6) VDS = 40 V (7) VDS = 45 V (7) VDS = 45 V (8) VDS = 50 V (8) VDS = 50 V Power gain as a function of output power; typical values BLF178P Product data sheet 600 800 1000 1200 1400 PL (W) IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. (1) VDS = 15 V Fig 8. 400 Fig 9. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 7 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 7.3 Test circuit C10 +Vds T2 C5 +Vgs C7 R1 R3 C12 L5 C14 C20 C1 L1 L3 C3 C2 C16 C18 C17 C4 L2 L4 R2 R4 +Vgs C8 BLF178P INTPUT REV1 L6 L7 C21 L8 C22 C19 C15 C13 BLF178P OUTPUT REV1 C6 T1 C11 +Vds 23 mm aaa-002248 Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 10. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 10. Component Product data sheet Value Remarks C1, C2, C5, C6, C14, C15, C21, C22 multilayer ceramic chip capacitor 1 nF [1] C3 multilayer ceramic chip capacitor 82 pF [1] C4 multilayer ceramic chip capacitor 240 pF [1] C7, C8 multilayer ceramic chip capacitor 4.7 F; 50 V C10, C11 electrolytic capacitor 1000 F; 63 V C12, C13 multilayer ceramic chip capacitor 4.7 F; 100 V C16, C17 multilayer ceramic chip capacitor 120 pF [1] C18 multilayer ceramic chip capacitor 82 pF [1] C19 multilayer ceramic chip capacitor 110 pF [1] C20 multilayer ceramic chip capacitor 56 pF [1] L1, L2, L3, L4 1.5 turn 0.8 mm copper wire D = 3 mm; length = 2 mm L5, L6 5 turn 0.8 mm copper wire D = 3 mm; length = 4.5 mm L7, L8 2.5 turn 0.8 mm copper wire D = 3 mm; length = 3 mm R1, R2 SMD resistor 100 R3, R4 SMD resistor 9.1 Philips 1206 T1 semi rigid coax 25 ; 160 mm UT-090C-25 T2 semi rigid coax 25 ; 160 mm UT-141C-25 [1] BLF178P Description Philips 1206 American Technical Ceramics type 800B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 8 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 11. Package outline SOT539A BLF178P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 9 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave DC Direct Current ESD ElectroStatic Discharge FM Frequency Modulation HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF178P v.2 20120216 Product data sheet - BLF178P v.1 Modifications BLF178P v.1 BLF178P Product data sheet • • • • • • • • • • The status of this document has been changed to Product data sheet. Table 1 on page 1: “Mode of operation” has been changed to “Test signal”. Table 1 on page 1: The value for Gp has been changed. Section 1.2 on page 1: Some values have been changed Table 6 on page 3: The value for IDSX has been changed Table 7 on page 4: “Mode of operation” has been changed to “Test signal”. Table 7 on page 4: Several values have been changed. Section 7 on page 5: Section has been added. Removed section “Reliability”. Section 9 on page 10: Section has been added. 20110405 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 - © NXP B.V. 2012. All rights reserved. 10 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. BLF178P Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 11 of 13 BLF178P NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF178P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 © NXP B.V. 2012. All rights reserved. 12 of 13 BLF178P NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Impedance information . . . . . . . . . . . . . . . . . . . 5 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 February 2012 Document identifier: BLF178P