ISC IIRF9540N P-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
IRF9540N,IIRF9540N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.117Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-23
A
IDM
Drain Current-Single Pulsed
-76
A
PD
Total Dissipation @TC=25℃
140
W
Tj
Max. Operating Junction Temperature
175
℃
-55~175
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
1.1
℃/W
Rth(j-a)
Channel-to-ambient thermal resistance
62
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
IRF9540N,IIRF9540N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= -250μA
-100
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -250μA
-2.0
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -11A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
isc website:www.iscsemi.cn
CONDITIONS
MIN
TYP
MAX
UNIT
V
-4.0
V
0.1
Ω
±100
nA
VDS= -100V; VGS= 0V
-25
μA
Is= -11A; VGS = 0V
-1.6
V
2
isc & iscsemi is registered trademark
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