INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK56A12N1，ITK56A12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 210 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2.77 ℃/W 62.5 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK56A12N1，ITK56A12N1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 120 VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA 2.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A IGSS Gate-Source Leakage Current IDSS VSDF TYP MAX UNIT V 4.0 V 7.5 mΩ VGS= ±20V;VDS= 0V ±0.1 μA Drain-Source Leakage Current VDS= 120V; VGS= 0V 10 μA Diode forward voltage IDR =56A, VGS = 0 V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark