Z ibo Seno Electronic Engineering Co., Ltd. EMB1F – EMB6F 0.8A SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Features ! ! ! ! ! ! G Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Surge Current Capability Designed for Surface Mount Application Plastic Material – UL Flammability 94V-O B - + ~ ~ Mechanical Data ! ! ! ! ! ! ! H D A MB-F Dim Min Max 4.50 4.95 A 3.60 4.10 B 0.15 0.35 C — 0.20 D 7.00 6.40 E 0.50 1.10 G 1.30 1.70 H 1.20 1.60 J 2.30 2.70 K — 1.80 L All Dimensions in mm J Case: MB-F, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Weight: 0.134 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version E K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 40°C Average Rectified Output Current (Note 2) @TA = 40°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I2t Rating for Fusing (t < 8.3ms) Forward Voltage per element Symbol EMB1F EMB2F VRRM VRWM VR 100 200 VR(RMS) 70 140 EMB4F EMB6F Unit 400 600 V 280 560 V IO 0.5 0.8 A IFSM 30 A I2t 5.0 A2s @IF = 0.8A VFM @TA = 25°C @TA = 125°C IRM 5.0 500 µA Reverse Recovery Time (Note 4) trr 35 nS Typical Junction Capacitance per leg (Note 3) Cj 13 pF Typical Thermal Resistance per leg (Note 1) RJA RJL 62.5 25 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage 0.95 1.25 1.7 V Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. EMB1F - EMB6F 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 1.0 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) EMB1F – EMB6F 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 175 Tj = 25°C Pulse width = 300µs 10 1.0 0.1 0.01 0 200 TA, AMBIENT TEMPERATURE ( C) Fig. 1 Forward Derating Curve 30 0.4 0.6 0.8 100 1.0 1.2 1.4 Tj = 25 C f = 1MHz Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 20 10 10 1 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm 5 Reverse Recovery Time Characteristic and Test Circuit EMB1F - EMB6F 2 of 2 www.senocn.com Alldatasheet