SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products Standard Recovery Diodes, 26A (ADD-A-PAK Power Modules) 80 3 4 5 21 7 2 6 1 2-Ø6.4 15 20 20 15 92 ADD-A-PAK 68 3-M5 SCREWS 18 5 6 31 High voltage 3000 V RMS isolating voltage lndustrial standard package UL approved file E320098 Glass passivated chips Low thermal resistance Designed and qualified for industrial level Compliant to RoHs 29.5 FEATURES All dimensions in millimeters BENEFITS MECHANICAL DESCRIPTION Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate Up to 1600V High surge capability Easy mounting on heatsink The new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION (APPLICATIONS) These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. PRODUCT SUMMARY IF(AV) 26A Type Modules-Diode, High Voltage 1 2 3 NKD 1 2 3 NKJ 1 2 3 NKC 2 3 NKE MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS T C = 100°C I 2t 41 50 HZ 650 60 HZ 680 50 HZ 2.11 60 HZ 1.92 I 2√t V RRM Range tJ T stg www.nellsemi.com UNIT 26 I F(RMS) I FSM VALUES Page 1 of 6 A kA 2 s 21.1 kA 2√s 400 to 1600 V -40 to 150 ºC SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKD26..A NKJ26..A NKC26..A NKE26..A lRRM, MAXIMUM AT TJ = 150°C mA 8 FORWARD CONDUCTION SYMBOL PARAMETER Maximum average forward current at case temperature I F(AV) I F(RMS) Maximum RMS forward current TEST CONDITIONS I FSM non-reptitive surge current t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum l 2√t I 2√t for fusing A 100 ºC 41 A No voltage reapplied 650 100%V RRM reapplied 547 680 A t = 8.3ms I 2t 26 DC at 100°C case temperature t = 10ms Maximum l 2 t for fusing UNIT 180° conduction, half sine wave t = 10ms Maximum peak, one-cycle forward, VALUES No voltage reapplied Sinusoidal half wave, 572 initial T J = T J maximum 2.11 1.92 1.50 100%V RRM reapplied 1.36 t = 0.1 to 10 ms, no voltage reapplied 21.1 Low level value of threshold voltage V F(TO)1 (16.7% x π x l F(AV) < I < π x l F(AV) ),T J =T J maximum 0.72 High level value of threshold voltage V F(TO)2 (I > π x l F(AV) ),T J = T J maximum 0.83 r f1 (16.7% x π x l F(AV) < I < π x l F(AV) ),T J = T J maximum 7.20 High level value of forward slope resistance r f2 (I > π x l F(AV) ), T J = T J maximum 5.75 l FM = 75A, T J = 25°C , t p = 400 µs square wave 1.35 V FM kA 2√s V Low level value of forward slope resistance Maximum forward voltage drop kA 2 s mΩ V BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse leakage current l RRM T J = 150°C Maximum RMS insulation Voltage VINS 50 Hz www.nellsemi.com Page 2 of 6 VALUES UNITS 8 mA 3000 (1 min) 3600 (1 s) V SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS T J ,T stg Junction and storage temperature range Maximum internal thermal resistance, junction to case per leg R thJC DC operation R thCS Mounting surface flat, smooth and greased VALUES UNIT -40 to 150 °C 0.76 °C/W Typical thermal resistance, case to heatsink per module A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink, M6 Mounting force, ±10% 0.1 busbar, M5 4 Nm 3 Approximate weight Case style 115 g 4.06 oz. ADD-A-PAK (TO-240AA) JEDEC ΔRthJC CONDUCTION SINE HALF WAVE CONDUCTION DEVICES NKD26/NKJ26 NKC26/NKE26 RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.212 0.258 0.330 0.466 0.72 0.166 0.276 0.357 0.482 0.726 Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Ordering Information Tabel Device code www.nellsemi.com NKD 26 1 2 / 16 A 3 4 1 - Module type, NKD, NKJ and NKC for ( Diode + Diode ) module NKE for single diode 2 - Current rating : IF(AV) 3 - Voltage code x 100 = VRRM 4 - Assembly type, ''A'' for soldering type Page 3 of 6 UNITS °C/W SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 150 150 R thJC (DC) = 0.33°C/W Maximum allowable case temperature(˚C) Maximum allowable case temperature(˚C) R thJC (DC) = 0.33°C/W 140 Conduction Angle 130 120 110 30° 100 0 5 10 Conduction Period 130 120 30° 60° 110 15 20 25 180° 90° 60° 90° 120°180° 120° 30 100 35 0 10 20 30 40 50 Average forward current (A) Fig.3 On-state power loss characteristics Fig.4 On-state power loss characteristics 60 40 Maximum average on-state power loss (W) 180° 120° 90° 60° 30° 30 RMS Limit 20 10 Conduction Angle 180° 120° 50 90° 60° 30° 40 30 DC RMS Limit 20 Conduction Period 10 Per leg, T j = 150°C 0 Per leg, T j = 150°C 0 0 5 10 15 20 25 30 0 Average on-state current (A) 10 20 30 40 50 Average on-state current (A) Fig.5 Maximum non-repetitive surge current Fig.6 Maximum non-repetitive surge current 700 600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = T J max @ 60Hz 0.0083 s @ 50Hz 0.0100 s 500 Peak half sine wave forward current (A) Peak half sine wave forward current (A) DC Average forward current (A) 50 Maximum average on-state power loss (W) 140 400 300 200 Per leg 100 10 1 500 400 300 200 100 0.01 100 Number of equal amplitude half cycle current pulses (N) www.nellsemi.com 600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 150°C, @50Hz No Voltage Reapplied Rated V RRM Reapplied Per leg 0.1 Pulse train duration (S) Page 4 of 6 1 SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products 60 1° C/ W 0 DC 0 1.5 °C /W 2°C /W 50 0 40 0 30 0 3 °C /W 4 °C /W 20 NKD26 Series0 Per leg T j = 150°C 0 8 °C/W 10 0 0 10 20 30 40 50 C/W .1 ° =0 180° 70 A 0 80 R thS 0 90 /W °C 0.3 /W °C W 0.5 C/ 7° 0. Maximum total on-state forward loss (W) Fig.7 On-state power loss characteristics 100 60 Total RMS output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig.8 On-state power loss characteristics R th SA 200 150 /W °C .1 =0 180° (sine) 180° (rect) W C/ 3° 0. Maximum total power loss (W) 250 0. 5° C/ W 0.7 °C /W 1°C /W 100 1.5 °C/ W 50 3°C/W 2 x NKD26 Series single phase bridge connected 8°C/W T j = 150°C 0 0 10 20 30 40 50 60 Total output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig.9 On-state power loss characteristics R th SA 250 /W °C .1 =0 120° (rect) 0. 4 °C 0.5 °C /W /W 0.7 °C /W 1 °C /W 1.5 ° C/W /W °C 200 3 0. Maximum total power loss (W) 300 150 100 3 x NKD26 Series three phase bridge connected T j = 150°C 50 3 °C/W 0 0 20 40 60 80 Total output current (A) www.nellsemi.com 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Page 5 of 6 SEMICONDUCTOR RoHS NKD26A/NKJ26A/NKC26A/NKE26A Series RoHS Nell High Power Products Fig.10 Forward voltage characteristics lnstantaneous forward current(A) 1000 Per leg 100 10 T j = 150°C T j = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 lnstantaneous forward voltage (V) Transient thermal lmpedance Z thJC (°C/W) Fig.11 Thermal lmpedance Z thJC characteristics 10 Steady state value R thJC = 0.76 °C/W (DC operation) 1 0.1 0.01 0.001 Per leg 0.01 0.1 Square wave pulse duration(S) www.nellsemi.com Page 6 of 6 1 10