IRF IRHMJ7250 Simple drive requirement Datasheet

PD-96914
IRHMJ7250
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
RAD Hard HEXFET
SURFACE MOUNT (TO-254AA Tabless)
®
™
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMJ7250
100K Rads (Si)
IRHMJ3250
300K Rads (Si)
RDS(on)
0.10Ω
0.10Ω
ID
26A
26A
IRHMJ4250
600K Rads (Si)
0.10Ω
26A
IRHMJ8250
1000K Rads (Si)
0.10Ω
26A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA Tabless
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
8.0 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/24/04
IRHMJ7250
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
VGS =0 V, ID = 1.0mA
—
0.27
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.10
0.11
4.0
—
25
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
30
60
33
140
140
140
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
4700
850
210
Ω
V
S( )
—
—
—
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 12V, ID = 16A
„
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A „
VDS= 160V,VGS=0V
VDS = 160V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 26A
VDS = 100V
VDD = 100V, ID = 26A,
VGS = 12V, RG = 2.35Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 26A, VGS = 0V Ã
Tj = 25°C, IF = 26A, di/dt ≤100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max
—
—
—
— 0.83
0.21 —
—
48
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
Radiation Characteristics
IRHMJ7250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 600K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
Diode Forward Voltage Ã
Test Conditions
1000K Rads (Si)2 Units
Min
Max
Min
Max
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.094
200
1.25
—
—
—
—
—
4.5
100
-100
50
0.149
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS =160V, VGS =0V
VGS = 12V, ID =16A
—
0.10
—
0.155
Ω
VGS = 12V, ID =16A
—
1.4
—
1.4
V
nA
V
VGS = 0V, IS = 26A
1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250
2. Part number IRHMJ8250
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2))
28
36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
190
180
170
125
—
39
100
100
100
50
—
200
VDS
150
Cu
Br
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHMJ7250
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Post-Irradiation
Pre-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
www.irf.com
Pre-Irradiation
Post-Irradiation
IRHMJ7250
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
RadiationPost-Irradiation
Characteristics
Pre-Irradiation
IRHMJ7250
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
www.irf.com
Pre-Irradiation
Radiation Characteristics
IRHMJ7250
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
www.irf.com
7
IRHMJ7250
Fig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 19. Typical Output Characteristics
Fig 21. Normalized On-Resistance
Vs. Temperature
www.irf.com
Pre-Irradiation
IRHMJ7250
Fig 22. Typical CapacitanceVs.
Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
Fig 25. Maximum Safe Operating
Area
www.irf.com
9
IRHMJ7250
Pre-Irradiation
V DS
V GS
RD
D.U.T.
RG
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
VDS
90%
Fig 26. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
www.irf.com
Pre-Irradiation
IRHMJ7250
15V
D.U.T.
RG
VGS
20V
DRIVER
L
VDS
+
- VDD
IAS
tp
A
0.01Ω
Fig 28a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 28b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
12V
IG
ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
IRHMJ7250
Pre-Irradiation
Foot Notes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 1.5mH
Peak IL = 26A, VGS = 12V
 ISD ≤ 26A, di/dt ≤ 190A/µs,
VDD ≤ 200V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt V DS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA Tabless
NOT ES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
CONT ROLLING DIMENS ION: INCH.
T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2004
12
www.irf.com
Similar pages