PHILIPS BTA212BD Three quadrant triacs guaranteed commutation Datasheet

Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
PINNING - SOT404
PIN
BTA212B series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA212BBTA212BBTA212BRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
VDRM
IT(RMS)
ITSM
PIN CONFIGURATION
MAX.
MAX.
UNIT
600D
600E
600F
600
800E
800F
800
V
12
95
12
95
A
A
SYMBOL
DESCRIPTION
mb
1
main terminal 1
2
main terminal 2
3
gate
mb
T2
T1
2
main terminal 2
1
G
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-600
6001
UNIT
-800
800
V
-
12
A
-
95
105
45
100
A
A
A2s
A/µs
-
2
5
5
0.5
A
V
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
55
1.5
2.0
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA212B2
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
TYP.
MAX.
UNIT
...D
...D
...E
...F
-
1.0
2.2
3.3
5
5
5
10
10
10
25
25
25
mA
mA
mA
-
6
6
9
15
25
25
25
30
30
30
40
40
mA
mA
mA
-
3.8
15
25
30
mA
...D, E, F
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
IT = 17 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max);
Tj = 125 ˚C
0.25
1.3
0.7
0.4
1.6
1.5
-
V
V
V
-
0.1
0.5
mA
MIN.
TYP.
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA212B-
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 110 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 20V/µs; gate
open circuit
VDM = 400 V; Tj = 110 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1V/µs; gate
open circuit
...D
MAX.
UNIT
...E
...F
...D
20
60
70
30
-
V/µs
1.8
3.5
5
3
-
A/ms
5
16
19
100
-
A/ms
2
-
µs
...D, E, F
tgt
Gate controlled turn-on
time
ITM = 12 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
-
-
-
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
20
BTA212B series D, E and F
Tmb(max) / C
95
Ptot / W
15
IT(RMS) / A
BT138
= 180
15
120
1
99 C
102.5
90
10
60
10
110
30
5
117.5
5
0
0
5
125
15
10
0
-50
0
50
Tmb / C
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
25
IT(RMS) / A
20
dI T /dt limit
15
100
10
I TSM
IT
T
5
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
100
80
1.6
ITSM
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
IT
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
1.4
time
Tj initial = 25 C max
1.2
60
1
40
0.8
20
0
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
February 2000
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
IGT(Tj)
IGT(25°C)
40
3
IT / A
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- G-
2.5
typ
max
30 Vo = 1.175 V
Rs = 0.0316 Ohms
2
20
1.5
1
10
0.5
0
0
-50
0
50
Tj/°C
100
150
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
IL(Tj)
IL(25 C)
10
2.5
Zth j-mb (K/W)
1
unidirectional
bidirectional
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
dIcom/dt (A/ms)
IH(Tj)
IH(25C)
100
F TYPE
E TYPE
D TYPE
2.5
2
10
1.5
1
0.5
0
-50
1
0
50
Tj / C
100
20
150
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
February 2000
40
60
80
Tj/˚C
100
120
140
Fig.12. Minimum, critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 20V/µs.
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
February 2000
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
6
Rev 1.000
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