CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB772NUJ3 BVCEO IC -30V -3A Features • Low VCE(sat), typically -0.2 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882NUJ3 • Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK) BTB772NUJ3 B：Base C：Collector E：Emitter B C E Ordering Information Device BTB772NUJ3-P-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTB772NUJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO VCEO VEBO DC Pulse Ta=25℃ Power Dissipation Tc=25℃ Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs, Duty≦2%. Collector Current IC PD Tj ; Tstg Limit -40 -30 -12 -3 -7 *1 1 10 -55~+150 Unit V V V A A W °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max Symbol RθJA RθJC Limit 125 12.5 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob Min. -40 -30 -12 120 160 - Typ. -0.2 -1 80 26 Max. -100 -100 -0.5 -1.5 320 - Unit V V V nA nA V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-30V, IE=0 VEB=-12V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-500mA VCE=-5V, IE=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank P Range 180~320 BTB772NUJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.45 1.4 IB=-1mA 0.35 0.3 0.25 IB=-500uA 0.2 IB=-5mA 1.2 -IC, Collector Current(A) -IC, Collector Current(A) 0.4 0.15 0.1 1 0.8 IB=-2.5mA 0.6 0.4 0.2 0.05 IB=0 0 IB=0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 4.5 IB=-20mA IB=-50mA 4 2.5 2 -IC, Collector Current(A) -IC, Collector Current(A) 3 IB=-10mA 1.5 IB=-6mA IB=-4mA 1 IB=-2mA 0.5 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 3.5 3 2.5 2 IB=-10mA 1.5 IB=-5mA 1 0.5 IB=0 0 IB=0 0 6 0 Current Gain vs Collector Current 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current 1000 1000 T a=25°C 100 VCE=-2V HFE, Current Gain HFE, Current Gain 6 VCE=-5V VCE=-2V VCE=-1V 10 100 125°C 75°C 25°C 0°C -40°C 10 1 BTB772NUJ3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: CYStech Electronics Corp. Page:4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 - VBE(SAT), Saturation Voltage(mV) - VCE(SAT), Saturation Voltage(mV) 1000 VCE(SAT) @ IC=10IB 100 125°C 75°C 25°C 0°C -40°C 10 1 1000 100 1 10 100 1000 -IC, Collector Current(mA) 10000 1 Saturation Voltage vs Collector Current 10000 1000 -40°C 0°C 25°C 75°C 125°C Cib Capacitance(pF) VBE(ON)@VCE=-2V -VBE(ON), On Voltage(mV) 10 100 1000 -IC, Collector Current(mA) Capacitance vs Reverse-Biased Voltage 10000 1000 100 Cob 10 1 100 1 10 100 1000 -IC, Collector Current(mA) 0.1 10000 1 10 -VR, Reverse-Biased Voltage(V) 100 Power Derating Curve Power Derating Curve 1.2 12 1 10 PD, Power Dissipation(W) PD, Power Dissipation(W) -40°C 0°C 25°C 75°C 125°C VBE(SAT)@IC=10IB 0.8 0.6 0.4 0.2 0 8 6 4 2 0 0 BTB772NUJ3 50 100 150 TA, Ambient Temperature(℃) 200 0 50 100 150 TC, CaseTemperature(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:5/7 Reel Dimension Carrier Tape Dimension BTB772NUJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB772NUJ3 CYStek Product Specification Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: CYStech Electronics Corp. Page:7/7 TO-252 Dimension Marking: 4 Device Name B772 P □□ Rank Date Code 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.030 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.750 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB772NUJ3 CYStek Product Specification