MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302N10N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC302N10N3 1Description PowerMOSTransistorChip •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB027N10N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS 100 V RDS(on) 2.71) mΩ Die size 6.7 x 4.5 mm2 Thickness 220 µm Type/OrderingCode Package IPC302N10N3 Chip Drain Gate Source Marking RelatedLinks not defined - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.7 3.5 V VDS=VGS,ID=302µA - 0.1 1 µA VGS=0V,VDS=100V - 1 nA VGS=20V,VDS=0V 100 mΩ VGS=10V,ID=2.0A 1.2 V VGS=0V,IF=1A - mJ ID =30 A, RGS =25 Ω Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current IGSS Drain-source on- resistance RDS(on) - 1.7 Reverse diode forward on-voltage VSD - 1.0 Avalanche energy, single pulse EAS 100 2) 4) - 45 3) 1) packaged in a P-TO263-3 (see ref. product) typicalbaredieRDS(on);VGS=10V 3) limited by wafer test-equipment 4) Wafer tested. For general avalanche capability refer to the datasheet of IPB027N10N3 G 2) Final Data Sheet 2 Rev.2.5,2014-07-23 OptiMOS™3PowerMOSTransistorChip IPC302N10N3 3PackageOutlines Figure1OutlineChip,dimensionsinµm Final Data Sheet 3 Rev.2.5,2014-07-23 OptiMOS™3PowerMOSTransistorChip IPC302N10N3 RevisionHistory IPC302N10N3 Revision:2014-07-23,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-07-23 Release Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 4 Rev.2.5,2014-07-23