Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2011.03.14 Page No. : 1/5 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD7521E3 BVDSS ID RCE(SAT) 90V 10A 50mΩ Features • High BVCEO • Very high current gain • Pb-free lead plating package Symbol Outline BTD7521E3 TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 90 90 9 10 20 (Note) 2 80 62.5 1.56 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : Single Pulse , Pw≦300μs,Duty≦2%. BTD7521E3 CYStek Product Specification Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2011.03.14 Page No. : 2/5 CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE *hFE Cob Min. 90 90 9 1000 600 300 - Typ. 120 24 170 320 0.74 130 Max. 10 100 250 50 300 500 0.9 - Unit V V V μA nA mV mΩ mV mV V pF Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IC=100μA, IC=0 VCB=90V, IE=0 VEB=7V, IC=0 IC=5A, IB=50mA IC=5A, IB=50mA IC=5A, IB=30mA IC=5A, IB=20mA IC=6A, IB=10mA VCE=5V, IC=1A VCE=5V, IC=5A VCE=5V, IC=10A VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device BTD7521E3 BTD7521E3 Package TO-220 (RoHS compliant package) Shipping 50 pcs / tube , 40 tubes/box CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2011.03.14 Page No. : 3/5 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VCESAT 1000 Saturation Voltage---(mV) Current Gain---HFE VCE=10V VCE=5V VCE=2V VCE=1V 1000 IC=250IB 100 10 IC=100IB IC=50IB 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 Saturation Voltage vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 1000 VBE(ON) @VCE=5V Saturation Voltage---(mV) Saturation Voltage---(mV) IC=500IB VBE(SAT) @IC=10IB 1000 VBE(SAT)@IC=300IB 100 100 10 100 1000 Collector Current---IC(mA) 10 10000 Power Derating Curve 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 90 2.5 2 Power Dissipation---PD(W) Power Dissipation---PD(W) 80 1.5 1 0.5 70 60 50 40 30 20 10 0 0 0 BTD7521E3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2011.03.14 Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD7521E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2011.03.14 Page No. : 5/5 TO-220 Dimension A Marking: B D E C H K M I Date Code 3 G N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD7521E3 CYStek Product Specification