MUN531335DW1 Complementary Bias Resistor Transistors NPN - R1=47 kW, R2=47 kW PNP - R1=2.2 kW, R2=47 kW www.onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. PIN CONNECTIONS (3) (2) R1 Q2 R2 • Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant R2 Q1 Features • • • • (1) (4) R1 (5) (6) MARKING DIAGRAM 6 SOT−363 CASE 419B AJ MG G 1 MAXIMUM RATINGS (TA = 25°C, common for Q1 (PNP), unless otherwise noted) Rating AJ M G = Specific Device Code = Date Code* = Pb-Free Package Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc (Note: Microdot may be in either location) IC 100 mAdc Input Forward Voltage VIN(fwd) 12 Vdc *Date Code orientation may vary depending upon manufacturing location. Input Reverse Voltage VIN(rev) 5 Vdc Collector Current − Continuous MAXIMUM RATINGS ORDERING INFORMATION (TA = 25°C, common for Q2 (NPN), unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 2 1 Device Package Shipping† NSVMUN531335DW1T1G SOT−363 3000 / Tape (Pb−Free) & Reel NSVMUN531335DW1T3G SOT−363 10000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MUN531335DW1/D MUN531335DW1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 187 256 1.5 2.0 mW MUN531335DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) RqJA mW/°C 670 490 °C/W 250 385 2.0 3.0 mW MUN531335DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) PD Total Device Dissipation (Note 1) TA = 25°C (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 2) RqJA (Note 1) Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2 mW/°C °C/W 493 325 °C/W 188 208 −55 to +150 °C MUN531335DW1 ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 (PNP)) Symbol Characteristic Min Typ Max − − 100 − − 500 − − 0.2 50 − − 50 − − 80 140 − − − 0.25 − 0.6 − − 0.8 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.2 V, IC = 5.0 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Vdc Vdc Vdc Vdc Vdc Input Resistor R1 1.5 2.2 2.9 Resistor Ratio R1/R2 0.038 0.047 0.056 kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 3 MUN531335DW1 ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q2 (NPN)) Symbol Characteristic Min Typ Max − − 100 − − 500 − − 0.1 50 − − 50 − − 80 140 − − − 0.25 − 1.2 − − 1.9 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (On) (VCE = 0.2 V, IC = 3.0 mA) Vi(on) Output Voltage (On) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL Output Voltage (Off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH V Vdc Vdc Vdc Vdc Input Resistor R1 32.9 47 61.1 Resistor Ratio R1/R2 0.8 1.0 1.2 kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (mW) 400 350 300 250 200 150 100 50 1.0 × 1.0 Inch Pad 0 −50 −25 0 25 50 75 100 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 4 125 150 MUN531335DW1 1000 1 IC/IB = 10 25°C 150°C 0.1 −55°C 0.01 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 100 150°C 1 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. DC Current Gain 7 100 5 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 6 4 3 2 1 150°C −55°C 10 1 25°C 0.1 0.01 VO = 5 V 0.001 0 10 20 30 40 50 0 1 VR, REVERSE BIAS VOLTAGE (V) Figure 4. Output Capacitance 2 3 Vin, INPUT VOLTAGE (V) Figure 5. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) −55°C 10 Figure 2. VCE(sat) vs. IC 0 VCE = 10 V 25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − PNP TRANSISTOR 10 25°C −55°C 1 150°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 5 50 4 MUN531335DW1 10 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − NPN TRANSISTOR 1 TA = −25°C 25°C 75°C 0.1 TA = 75°C 25°C 0.01 10 0 50 20 40 IC, COLLECTOR CURRENT (mA) −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 3.2 IC, COLLECTOR CURRENT (mA) 100 f = 10 kHz IE = 0 A TA = 25°C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 10 TA = −25°C 75°C 25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 0 2 4 6 Vin, INPUT VOLTAGE (V) 100 VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 10. Output Current vs. Input Voltage Figure 9. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 6 50 10 MUN531335DW1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 L L2 E1 E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b ddd TOP VIEW M A2 C A-B D DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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