LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16TT1G S-LBAS16TT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25oC) SC-89 Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 150 mW 1.6 mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RθJA 0.625 °C/mW Rating Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) DEVICE MARKING LBAS16TT1 G= A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — — 715 866 1000 1250 — — — 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) CD — 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) trr — 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) QS — 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR — 1.75 V µA ORDERING INFORMATION Device Marking Shipping LBAS16TT1G S-LBAS16TT1G A6 3000/Tape&Reel LBAS16TT3G S-LBAS16TT3G A6 10000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS16TT1G, S-LBAS16TT1G 1 ns MAX 500 Ω t 10% DUT trr tif 50 Ω DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 M C 7 pF 500 Ω VC DUT D1 t 10% Qa VCM C 243 pF 100 KΩ DUTY CYCLE = 2% t 90% Vf BAW62 VCM 20 ns MAX 400 ns Figure 2. Recovery Charge Equivalent Test Circuit V 120 ns 450 Ω 1 KΩ V 90% Vfr 50 Ω DUT t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LBAS16TT1G, S-LBAS16TT1G 10 IR , REVERSE CURRENT (µA) 10 TA = 85°C TA = 25°C 1.0 TA = -40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 TA = 25°C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Rev.O 3/4 50 LESHAN RADIO COMPANY, LTD. LBAS16TT1G, S-LBAS16TT1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. Rev.O 4/4