TI1 LM2832YSD/NOPB High frequency 2.0a load - step-down dc-dc regulator Datasheet

LM2832
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LM2832 High Frequency 2.0A Load - Step-Down DC-DC Regulator
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FEATURES
DESCRIPTION
•
•
•
•
The LM2832 regulator is a monolithic, high frequency,
PWM step-down DC/DC converter in a 6 Pin WSON
and a 8 Pin eMSOP-PowerPAD package. It provides
all the active functions to provide local DC/DC
conversion with fast transient response and accurate
regulation in the smallest possible PCB area. With a
minimum of external components, the LM2832 is
easy to use. The ability to drive 2.0A loads with an
internal 150 mΩ PMOS switch using state-of-the-art
0.5 µm BiCMOS technology results in the best power
density available. The world-class control circuitry
allows on-times as low as 30ns, thus supporting
exceptionally high frequency conversion over the
entire 3V to 5.5V input operating range down to the
minimum output voltage of 0.6V. Switching frequency
is internally set to 550 kHz, 1.6 MHz, or 3.0 MHz,
allowing the use of extremely small surface mount
inductors and chip capacitors. Even though the
operating frequency is high, efficiencies up to 93%
are easy to achieve. External shutdown is included,
featuring an ultra-low stand-by current of 30 nA. The
LM2832 utilizes current-mode control and internal
compensation to provide high-performance regulation
over a wide range of operating conditions. Additional
features include internal soft-start circuitry to reduce
inrush current, pulse-by-pulse current limit, thermal
shutdown, and output over-voltage protection.
1
2
•
•
•
•
•
•
Input Voltage Range of 3.0V to 5.5V
Output Voltage Range of 0.6V to 4.5V
2.0A Output Current
High Switching Frequencies
–
1.6MHz (LM2832X)
–
0.55MHz (LM2832Y)
–
3.0MHz (LM2832Z)
150mΩ PMOS Switch
0.6V, 2% Internal Voltage Reference
Internal Soft-Start
Current Mode, PWM Operation
Thermal Shutdown
Over Voltage Protection
APPLICATIONS
•
•
•
•
•
Local 5V to Vcore Step-Down Converters
Core Power in HDDs
Set-Top Boxes
USB Powered Devices
DSL Modems
Typical Application Circuit
FB
EN
LM2832
R3
VIN
GND
L1
SW
VO = 3.3V @ 2.0A
VIN = 5V
R1
C1
D1
C2
C3
R2
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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Connection Diagrams
FB
1
GND
2
DAP
6 EN
VIND
1
5 VINA
VINA
2
8
SW
7
GND
DAP
SW
3
4 VIND
Figure 1. 6-Pin WSON
GND
3
6
FB
EN
4
5
GND
Figure 2. 8-Pin eMSOP-PowerPAD
PIN DESCRIPTIONS 8-PIN eMSOP-PowerPAD
Pin
Name
Function
1
VIND
Power Input supply.
2
VINA
Control circuitry supply voltage. Connect VINA to VIND on PC board.
3, 5, 7
GND
Signal and power ground pin. Place the bottom resistor of the feedback network as close as
possible to this pin.
4
EN
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than
VIN + 0.3V.
6
FB
Feedback pin. Connect to external resistor divider to set output voltage.
8
SW
Output switch. Connect to the inductor and catch diode.
DAP
Die Attach Pad
Connect to system ground for low thermal impedance, but it cannot be used as a primary GND
connection.
PIN DESCRIPTIONS 6-PIN WSON
Pin
2
Name
1
FB
2
GND
Function
Feedback pin. Connect to external resistor divider to set output voltage.
Signal and power ground pin. Place the bottom resistor of the feedback network as close as
possible to this pin.
3
SW
4
VIND
Output switch. Connect to the inductor and catch diode.
Power Input supply.
5
VINA
Control circuitry supply voltage. Connect VINA to VIND on PC board.
6
EN
DAP
Die Attach Pad
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than
VINA + 0.3V.
Connect to system ground for low thermal impedance, but it cannot be used as a primary GND
connection.
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Absolute Maximum Ratings (1)
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(2)
VIN
-0.5V to 7V
FB Voltage
-0.5V to 3V
EN Voltage
-0.5V to 7V
SW Voltage
-0.5V to 7V
ESD Susceptibility
2kV
Junction Temperature (3)
150°C
−65°C to +150°C
Storage Temperature
Soldering Information
(1)
(2)
(3)
Infrared or Convection Reflow (15 sec)
220°C
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Range indicates conditions for
which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device.
Operating Ratings
VIN
3V to 5.5V
−40°C to +125°C
Junction Temperature
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Electrical Characteristics
VIN = 5V unless otherwise indicated under the Conditions column. Limits in standard type are for TJ = 25°C only; limits in
boldface type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are ensured
through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
Symbol
VFB
ΔVFB/VIN
IB
UVLO
Parameter
Conditions
Min
Typ
Max
WSON-6 Package
0.588
0.600
0.612
Feedback Voltage
eMSOP-PowerPAD-8
Package
0.584
0.600
0.616
Feedback Voltage Line Regulation
VIN = 3V to 5V
0.02
Feedback Input Bias Current
Undervoltage Lockout
VIN Rising
VIN Falling
1.85
UVLO Hysteresis
FSW
DMAX
DMIN
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
RDS(ON)
ICL
VEN_TH
(1)
4
2.90
V
2.3
1.6
1.95
LM2832-Y
0.4
0.55
0.7
LM2832-Z
2.25
3.0
3.75
LM2832-X
86
94
LM2832-Y
90
96
LM2832-Z
82
90
LM2832-X
5
LM2832-Y
2
eMSOP-PowerPAD-8
Package
155
Switch Current Limit
VIN = 3.3V
2.4
Quiescent Current (switching)
%
%
240
3.25
Shutdown Threshold Voltage
Enable Pin Current
MHz
7
Switch On Resistance
Switch Leakage
V
1.2
150
IEN
IQ
nA
2.73
WSON-6 Package
ISW
%/V
100
LM2832-X
1.8
100
100
LM2832X VFB = 0.55
3.3
5
LM2831Y VFB = 0.55
2.8
4.5
6.5
LM2832Z VFB = 0.55
4.3
All Options VEN = 0V
30
θJA
Junction to Ambient
0 LFPM Air Flow (1)
WSON-6 and eMSOPPowerPAD-8 Packages
80
θJC
Junction to Case (1)
WSON-6 and eMSOPPowerPAD-8 Packages
18
TSD
Thermal Shutdown Temperature
165
V
nA
Sink/Source
Quiescent Current (shutdown)
mΩ
A
0.4
Enable Threshold Voltage
V
0.1
0.43
LM2832-Z
Units
nA
mA
nA
°C/W
°C/W
°C
Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.
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Typical Performance Characteristics
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
η vs Load "X, Y and Z" Vin = 3.3V, Vo = 1.8V
η vs Load "X" Vin = 5V, Vo = 1.8V & 3.3V
Figure 3.
Figure 4.
η vs Load - "Y" Vin = 5V, Vo = 3.3V & 1.8V
η vs Load "Z" Vin = 5V, Vo = 3.3V & 1.8V
Figure 5.
Figure 6.
Load Regulation Vin = 3.3V, Vo = 1.8V (All Options)
Load Regulation Vin = 5V, Vo = 1.8V (All Options)
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
Load Regulation Vin = 5V, Vo = 3.3V (All Options)
Oscillator Frequency vs Temperature - "X"
OSCILLATOR FREQUENCY (MHz)
1.81
1.76
1.71
1.66
1.61
1.56
1.51
1.46
1.41
1.36
-45 -40
-10
20
50
80 110 125 130
TEMPERATURE (ºC)
Figure 9.
Figure 10.
Oscillator Frequency vs Temperature - "Y"
Oscillator Frequency vs Temperature - "Z"
3.45
OSCILLATOR FREQUENCY (MHz)
OSCILLATOR FREQUENCY (MHz)
0.60
0.58
0.56
0.54
0.52
0.50
0.48
0.46
-45 -40
-10
20
50
80 110 125 130
3.35
3.25
3.15
3.05
2.95
2.85
2.75
2.65
2.55
-45 -40
-10
20
50
80 110 125 130
TEMPERATURE (ºC)
TEMPERATURE (°C)
Figure 11.
Figure 12.
Current Limit vs Temperature Vin = 3.3V
RDSON vs Temperature (WSON-6 Package)
3800
3700
CURRENT LIMIT (mA)
3600
3500
3400
3300
3200
3100
3000
2900
2800
-45 -40
-10
20
50
80 110 125 130
TEMPERATURE (oC)
Figure 13.
6
Figure 14.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
RDSON vs Temperature (eMSOP-PowerPAD-8 Package)
LM2832X IQ (Quiescent Current)
3.6
3.5
IQ (mA)
3.4
3.3
3.2
3.1
3.0
-45
-40 -10
20
50
80
110 125 130
TEMPERATURE (ºC)
Figure 15.
Figure 16.
LM2832Y IQ (Quiescent Current)
LM2832Z IQ (Quiescent Current)
2.65
4.6
2.6
4.5
2.55
4.4
2.45
IQ (mA)
IQ (mA)
2.5
2.4
2.35
4.3
4.2
2.3
2.25
4.1
2.2
2.15
-45 -40 -10
20
50
80
4.0
-45
110 125 130
TEMPERATURE (°C)
-40 -10
20
50
80
110 125 130
TEMPERATURE (ºC)
Figure 17.
Figure 18.
Line Regulation Vo = 1.8V, Io = 500mA
VFB vs Temperature
FEEBACK VOLTAGE (V)
0.610
0.605
0.600
0.595
0.590
-45 -40 -10
20
50
80
110 125 130
TEMPERATURE (ºC)
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
Gain vs Frequency (Vin = 5V, Vo = 1.2V @ 1A)
Phase Plot vs Frequency (Vin = 5V, Vo = 1.2V @ 1A)
Figure 21.
Figure 22.
Simplified Block Diagram
EN
VIN
+
ENABLE and UVLO
ThermalSHDN
I SENSE
-
+
-
I LIMIT
-
1 .15 x VREF
+
OVPSHDN
Ramp Artificial
Control Logic
cv
FB
S
R
R
Q
1.6 MHz
+
I SENSE
PFET
-
+
DRIVER
Internal - Comp
SW
VREF = 0.6V
SOFT - START
Internal - LDO
GND
Figure 23.
8
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APPLICATIONS INFORMATION
THEORY OF OPERATION
The LM2832 is a constant frequency PWM buck regulator IC that delivers a 2.0A load current. The regulator has
a preset switching frequency of 1.6MHz or 3.0MHz. This high frequency allows the LM2832 to operate with small
surface mount capacitors and inductors, resulting in a DC/DC converter that requires a minimum amount of
board space. The LM2832 is internally compensated, so it is simple to use and requires few external
components. The LM2832 uses current-mode control to regulate the output voltage. The following operating
description of the LM2832 will refer to the Simplified Block Diagram (Figure 23) and to the waveforms in
Figure 24. The LM2832 supplies a regulated output voltage by switching the internal PMOS control switch at
constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the reset pulse
generated by the internal oscillator. When this pulse goes low, the output control logic turns on the internal
PMOS control switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and the
inductor current (IL) increases with a linear slope. IL is measured by the current sense amplifier, which generates
an output proportional to the switch current. The sense signal is summed with the regulator’s corrective ramp and
compared to the error amplifier’s output, which is proportional to the difference between the feedback voltage
and VREF. When the PWM comparator output goes high, the output switch turns off until the next switching cycle
begins. During the switch off-time, inductor current discharges through the Schottky catch diode, which forces the
SW pin to swing below ground by the forward voltage (VD) of the Schottky catch diode. The regulator loop
adjusts the duty cycle (D) to maintain a constant output voltage.
VSW
D = TON/TSW
VIN
SW
Voltage
TOFF
TON
0
VD
t
TSW
IL
IPK
Inductor
Current
t
0
Figure 24. Typical Waveforms
SOFT-START
This function forces VOUT to increase at a controlled rate during start up. During soft-start, the error amplifier’s
reference voltage ramps from 0V to its nominal value of 0.6V in approximately 600 µs. This forces the regulator
output to ramp up in a controlled fashion, which helps reduce inrush current.
OUTPUT OVERVOLTAGE PROTECTION
The over-voltage comparator compares the FB pin voltage to a voltage that is 15% higher than the internal
reference VREF. Once the FB pin voltage goes 15% above the internal reference, the internal PMOS control
switch is turned off, which allows the output voltage to decrease toward regulation.
UNDERVOLTAGE LOCKOUT
Under-voltage lockout (UVLO) prevents the LM2832 from operating until the input voltage exceeds 2.73V (typ).
The UVLO threshold has approximately 430 mV of hysteresis, so the part will operate until VIN drops below 2.3V
(typ). Hysteresis prevents the part from turning off during power up if VIN is non-monotonic.
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CURRENT LIMIT
The LM2832 uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle, a
current limit comparator detects if the output switch current exceeds 3.25A (typ), and turns off the switch until the
next switching cycle begins.
THERMAL SHUTDOWN
Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature
exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature
drops to approximately 150°C.
Design Guide
INDUCTOR SELECTION
The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VO) to input voltage (VIN):
D=
VOUT
VIN
(1)
The catch diode (D1) forward voltage drop and the voltage drop across the internal PMOS must be included to
calculate a more accurate duty cycle. Calculate D by using the following formula:
VOUT + VD
D=
VIN + VD - VSW
(2)
VSW can be approximated by:
VSW = IOUT x RDSON
(3)
The diode forward drop (VD) can range from 0.3V to 0.7V depending on the quality of the diode. The lower the
VD, the higher the operating efficiency of the converter. The inductor value determines the output ripple current.
Lower inductor values decrease the size of the inductor, but increase the output ripple current. An increase in the
inductor value will decrease the output ripple current.
One must ensure that the minimum current limit (2.4A) is not exceeded, so the peak current in the inductor must
be calculated. The peak current (ILPK) in the inductor is calculated by:
ILPK = IOUT + ΔiL
(4)
'i L
I OUT
VIN - VOUT
VOUT
L
L
DTS
TS
t
Figure 25. Inductor Current
VIN - VOUT
L
=
2'iL
DTS
(5)
In general,
ΔiL = 0.1 x (IOUT) → 0.2 x (IOUT)
(6)
If ΔiL = 20% of 2A, the peak current in the inductor will be 2.4A. The minimum ensured current limit over all
operating conditions is 2.4A. One can either reduce ΔiL, or make the engineering judgment that zero margin will
be safe enough. The typical current limit is 3.25A.
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The LM2832 operates at frequencies allowing the use of ceramic output capacitors without compromising
transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple.
See the OUTPUT CAPACITOR for more details on calculating output voltage ripple. Now that the ripple current
is determined, the inductance is calculated by:
DTS
x (VIN - VOUT)
L=
2'iL
where
TS =
1
fS
(8)
(8)
When selecting an inductor, make sure that it is capable of supporting the peak output current without saturating.
Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating
correctly. Because of the speed of the internal current limit, the peak current of the inductor need only be
specified for the required maximum output current. For example, if the designed maximum output current is 1.0A
and the peak current is 1.25A, then the inductor should be specified with a saturation current limit of > 1.25A.
There is no need to specify the saturation or peak current of the inductor at the 3.25A typical switch current limit.
The difference in inductor size is a factor of 5. Because of the operating frequency of the LM2832, ferrite based
inductors are preferred to minimize core losses. This presents little restriction since the variety of ferrite-based
inductors is huge. Lastly, inductors with lower series resistance (RDCR) will provide better operating efficiency. For
recommended inductors see Example Circuits.
INPUT CAPACITOR
An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The
primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent
Series Inductance). The recommended input capacitance is 22 µF.The input voltage rating is specifically stated
by the capacitor manufacturer. Make sure to check any recommended deratings and also verify if there is any
significant change in capacitance at the operating input voltage and the operating temperature. The input
capacitor maximum RMS input current rating (IRMS-IN) must be greater than:
IRMS_IN D IOUT2 (1-D) +
'i2
3
(9)
Neglecting inductor ripple simplifies the above equation to:
IRMS_IN = IOUT x D(1 - D)
(10)
It can be shown from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always
calculate the RMS at the point where the duty cycle D is closest to 0.5. The ESL of an input capacitor is usually
determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL
and a 0805 ceramic chip capacitor will have very low ESL. At the operating frequencies of the LM2832, leaded
capacitors may have an ESL so large that the resulting impedance (2πfL) will be higher than that required to
provide stable operation. As a result, surface mount capacitors are strongly recommended.
Sanyo POSCAP, Tantalum or Niobium, Panasonic SP, and multilayer ceramic capacitors (MLCC) are all good
choices for both input and output capacitors and have very low ESL. For MLCCs it is recommended to use X7R
or X5R type capacitors due to their tolerance and temperature characteristics. Consult capacitor manufacturer
datasheets to see how rated capacitance varies over operating conditions.
OUTPUT CAPACITOR
The output capacitor is selected based upon the desired output ripple and transient response. The initial current
of a load transient is provided mainly by the output capacitor. The output ripple of the converter is:
1
'VOUT = 'IL RESR +
8 x FSW x COUT
(11)
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When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the
output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Given the
availability and quality of MLCCs and the expected output voltage of designs using the LM2832, there is really no
need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability to bypass
high frequency noise. A certain amount of switching edge noise will couple through parasitic capacitances in the
inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not. Since the output
capacitor is one of the two external components that control the stability of the regulator control loop, most
applications will require a minimum of 22 µF of output capacitance. Capacitance often, but not always, can be
increased significantly with little detriment to the regulator stability. Like the input capacitor, recommended
multilayer ceramic capacitors are X7R or X5R types.
CATCH DIODE
The catch diode (D1) conducts during the switch off-time. A Schottky diode is recommended for its fast switching
times and low forward voltage drop. The catch diode should be chosen so that its current rating is greater than:
ID1 = IOUT x (1-D)
(12)
The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.
To improve efficiency, choose a Schottky diode with a low forward voltage drop.
OUTPUT VOLTAGE
The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and
R1 is connected between VO and the FB pin. A good value for R2 is 10kΩ. When designing a unity gain
converter (Vo = 0.6V), R1 should be between 0Ω and 100Ω, and R2 should be equal or greater than 10kΩ.
VOUT
- 1 x R2
R1 =
VREF
(13)
VREF = 0.60V
(14)
PCB LAYOUT CONSIDERATIONS
When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The
most important consideration is the close coupling of the GND connections of the input capacitor and the catch
diode D1. These ground ends should be close to one another and be connected to the GND plane with at least
two through-holes. Place these components as close to the IC as possible. Next in importance is the location of
the GND connection of the output capacitor, which should be near the GND connections of CIN and D1. There
should be a continuous ground plane on the bottom layer of a two-layer board except under the switching node
island. The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise
pickup and inaccurate regulation. The feedback resistors should be placed as close as possible to the IC, with
the GND of R1 placed as close as possible to the GND of the IC. The VOUT trace to R2 should be routed away
from the inductor and any other traces that are switching. High AC currents flow through the VIN, SW and VOUT
traces, so they should be as short and wide as possible. However, making the traces wide increases radiated
noise, so the designer must make this trade-off. Radiated noise can be decreased by choosing a shielded
inductor. The remaining components should also be placed as close as possible to the IC. Please see
Application Note AN-1229 SNVA054 for further considerations and the LM2832 demo board as an example of a
four-layer layout.
Calculating Efficiency, and Junction Temperature
The complete LM2832 DC/DC converter efficiency can be calculated in the following manner.
K=
POUT
PIN
(15)
Or
K=
POUT
POUT + PLOSS
(16)
Calculations for determining the most significant power losses are shown below. Other losses totaling less than
2% are not discussed.
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Power loss (PLOSS) is the sum of two basic types of losses in the converter: switching and conduction.
Conduction losses usually dominate at higher output loads, whereas switching losses remain relatively fixed and
dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D):
D=
VOUT + VD
VIN + VD - VSW
(17)
VSW is the voltage drop across the internal PFET when it is on, and is equal to:
VSW = IOUT x RDSON
(18)
VD is the forward voltage drop across the Schottky catch diode. It can be obtained from the diode manufactures
Electrical Characteristics section. If the voltage drop across the inductor (VDCR) is accounted for, the equation
becomes:
D=
VOUT + VD + VDCR
VIN + VD + VDCR - VSW
(19)
The conduction losses in the free-wheeling Schottky diode are calculated as follows:
PDIODE = VD x IOUT x (1-D)
(20)
Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky
diode that has a low forward voltage drop.
Another significant external power loss is the conduction loss in the output inductor. The equation can be
simplified to:
PIND = IOUT2 x RDCR
(21)
The LM2832 conduction loss is mainly associated with the internal PFET:
PCOND = (IOUT2 x D) 1 +
'iL
1
x
3
IOUT
2
RDSON
(22)
If the inductor ripple current is fairly small, the conduction losses can be simplified to:
PCOND = IOUT2 x RDSON x D
(23)
Switching losses are also associated with the internal PFET. They occur during the switch on and off transition
periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss
is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node.
Switching Power Loss is calculated as follows:
PSWR = 1/2(VIN x IOUT x FSW x TRISE)
PSWF = 1/2(VIN x IOUT x FSW x TFALL)
PSW = PSWR + PSWF
(24)
(25)
(26)
Another loss is the power required for operation of the internal circuitry:
PQ = IQ x VIN
(27)
IQ is the quiescent operating current, and is typically around 2.5mA for the 0.55MHz frequency option.
Typical Application power losses are:
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Table 1. Power Loss Tabulation
VIN
5.0V
VOUT
3.3V
IOUT
1.75A
POUT
5.78W
PDIODE
262mW
VD
0.45V
FSW
550kHz
IQ
2.5mA
PQ
12.5mW
10mW
TRISE
4nS
PSWR
TFALL
4nS
PSWF
10mW
RDS(ON)
150mΩ
PCOND
306mW
INDDCR
50mΩ
PIND
153mW
D
0.667
PLOSS
753mW
η
88%
PINTERNAL
339mW
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
ΣPCOND + PSWF + PSWR + PQ = PINTERNAL
PINTERNAL = 339mW
(28)
(29)
(30)
Thermal Definitions
TJ
Chip junction temperature
TA
Ambient temperature
RθJC Thermal resistance from chip junction to device case
RθJA Thermal resistance from chip junction to ambient air
Heat in the LM2832 due to internal power dissipation is removed through conduction and/or convection.
Conduction Heat transfer occurs through cross sectional areas of material. Depending on the material, the
transfer of heat can be considered to have poor to good thermal conductivity properties (insulator vs.
conductor).
Heat Transfer goes as:
Silicon → package → lead frame → PCB
Convection Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural
convection occurs when air currents rise from the hot device to cooler air.
Thermal impedance is defined as:
RT =
'T
Power
(31)
Thermal impedance from the silicon junction to the ambient air is defined as:
RTJA =
TJ - TA
Power
(32)
The PCB size, weight of copper used to route traces and ground plane, and number of layers within the PCB can
greatly effect RθJA. The type and number of thermal vias can also make a large difference in the thermal
impedance. Thermal vias are necessary in most applications. They conduct heat from the surface of the PCB to
the ground plane. Four to six thermal vias should be placed under the exposed pad to the ground plane if the
WSON package is used.
Thermal impedance also depends on the thermal properties of the application operating conditions (Vin, Vo, Io
etc), and the surrounding circuitry.
14
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Silicon Junction Temperature Determination Method 1:
To accurately measure the silicon temperature for a given application, two methods can be used. The first
method requires the user to know the thermal impedance of the silicon junction to top case temperature.
Some clarification needs to be made before we go any further.
RθJC is the thermal impedance from all six sides of an IC package to silicon junction.
RΦJC is the thermal impedance from top case to the silicon junction.
In this data sheet we will use RΦJC so that it allows the user to measure top case temperature with a small
thermocouple attached to the top case.
RΦJC is approximately 30°C/Watt for the 6-pin WSON package with the exposed pad. Knowing the internal
dissipation from the efficiency calculation given previously, and the case temperature, which can be empirically
measured on the bench we have:
TJ - TC
R)JC =
Power
(33)
Therefore:
Tj = (RΦJC x PLOSS) + TC
(34)
From the previous example:
Tj = (RΦJC x PINTERNAL) + TC
Tj = 30°C/W x 0.339W + TC
(35)
(36)
The second method can give a very accurate silicon junction temperature.
The first step is to determine RθJA of the application. The LM2832 has over-temperature protection circuitry.
When the silicon temperature reaches 165°C, the device stops switching. The protection circuitry has a
hysteresis of about 15°C. Once the silicon temperature has decreased to approximately 150°C, the device will
start to switch again. Knowing this, the RθJA for any application can be characterized during the early stages of
the design one may calculate the RθJA by placing the PCB circuit into a thermal chamber. Raise the ambient
temperature in the given working application until the circuit enters thermal shutdown. If the SW-pin is monitored,
it will be obvious when the internal PFET stops switching, indicating a junction temperature of 165°C. Knowing
the internal power dissipation from the above methods, the junction temperature, and the ambient temperature
RθJA can be determined.
RTJA =
165° - Ta
PINTERNAL
(37)
Once this is determined, the maximum ambient temperature allowed for a desired junction temperature can be
found.
An example of calculating RθJA for an application using the Texas Instruments LM2832 WSON demonstration
board is shown below.
The four layer PCB is constructed using FR4 with ½ oz copper traces. The copper ground plane is on the bottom
layer. The ground plane is accessed by two vias. The board measures 3.0cm x 3.0cm. It was placed in an oven
with no forced airflow. The ambient temperature was raised to 126°C, and at that temperature, the device went
into thermal shutdown.
From the previous example:
PINTERNAL = 339mW
RTJA =
(38)
165oC - 126oC
= 115o C/W
339 mW
(39)
If the junction temperature was to be kept below 125°C, then the ambient temperature could not go above 86°C.
Tj - (RθJA x PLOSS) = TA
(40)
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125°C - (115°C/W x 339mW) = 86°C
16
(41)
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WSON Package
Figure 26. Internal WSON Connection
For certain high power applications, the PCB land may be modified to a "dog bone" shape (see Figure 27). By
increasing the size of ground plane, and adding thermal vias, the RθJA for the application can be reduced.
FB
GND
6 EN
1
2
GND
PLANE
SW 3
5 VINA
4 VIND
Figure 27. 6-Lead WSON PCB Dog Bone Layout
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LM2832
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www.ti.com
LM2832X Design Example 1
FB
EN
LM2832
R3
GND
L1
VIN
VO = 1.2V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 28. LM2832X (1.6MHz): Vin = 5V, Vo = 1.2V @ 2.0A
Table 2. Bill of Materials
18
Part ID
Part Value
Manufacturer
U1
2.0A Buck Regulator
TI
Part Number
LM2832X
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1
2.2µH, 3.5A
Coilcraft
DS3316P-222
R2
15.0kΩ, 1%
Vishay
CRCW08051502F
R1
15.0kΩ, 1%
Vishay
CRCW08051502F
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832X Design Example 2
FB
EN
LM2832
R3
GND
L1
VIN
VO = 0.6V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 29. LM2832X (1.6MHz): Vin = 5V, Vo = 0.6V @ 2.0A
Table 3. Bill of Materials
Part ID
Part Value
Manufacturer
U1
2.0A Buck Regulator
TI
Part Number
LM2832X
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1
3.3µH, 3.3A
Coilcraft
DS3316P-332
R2
10.0kΩ, 1%
Vishay
CRCW08051000F
R1
0Ω
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832
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LM2832X Design Example 3
FB
EN
LM2832
R3
GND
L1
VIN
VO = 3.3V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 30. LM2832X (1.6MHz): Vin = 5V, Vo = 3.3V @ 2.0A
Table 4. Bill of Materials
20
Part ID
Part Value
Manufacturer
U1
2.0A Buck Regulator
TI
Part Number
LM2832X
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1
2.2µH, 2.8A
Coilcraft
ME3220-222
R2
10.0kΩ, 1%
Vishay
CRCW08051002F
R1
45.3kΩ, 1%
Vishay
CRCW08054532F
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832Y Design Example 4
FB
EN
LM2832
R3
GND
L1
VIN
VO = 3.3V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 31. LM2832Y (550kHz): Vin = 5V, Vout = 3.3V @ 2.0A
Table 5. Bill of Materials
Part ID
Part Value
Manufacturer
U1
1.5A Buck Regulator
TI
Part Number
LM2832Y
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.3Vf Schottky 1.5A, 30VR
TOSHIBA
CRS08
L1
4.7µH 2.1A
TDK
SLF7045T-4R7M2R0-PF
R1
10.0kΩ, 1%
Vishay
CRCW08051002F
R2
10.0kΩ, 1%
Vishay
CRCW08051002F
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LM2832
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LM2832Y Design Example 5
FB
EN
LM2832
R3
GND
L1
VIN
VO = 1.2V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 32. LM2832Y (550kHz): Vin = 5V, Vout = 1.2V @ 2.0A
Table 6. Bill of Materials
22
Part ID
Part Value
Manufacturer
U1
1.5A Buck Regulator
TI
Part Number
LM2832Y
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.3Vf Schottky 1.5A, 30VR
TOSHIBA
CRS08
L1
6.8µH 1.8A
TDK
SLF7045T-6R8M1R7
R1
10.0kΩ, 1%
Vishay
CRCW08051002F
R2
10.0kΩ, 1%
Vishay
CRCW08051002F
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LM2832Z Design Example 6
FB
EN
LM2832
R3
GND
L1
VIN
VO = 3.3V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 33. LM2832Z (3MHz): Vin = 5V, Vo = 3.3V @ 2.0A
Table 7. Bill of Materials
Part ID
Part Value
Manufacturer
U1
2.0A Buck Regulator
TI
Part Number
LM2832Z
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1
3.3µH, 3.3A
Coilcraft
DS3316P-332
R2
10.0kΩ, 1%
Vishay
CRCW08051002F
R1
45.3kΩ, 1%
Vishay
CRCW08054532F
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832Z Design Example 7
FB
EN
LM2832
R3
GND
L1
VIN
VO = 1.2V @ 2.0A
SW
VIN = 5V
R1
C1
D1
C2
R2
Figure 34. LM2832Z (3MHz): Vin = 5V, Vo = 1.2V @ 2.0A
Table 8. Bill of Materials
24
Part ID
Part Value
Manufacturer
U1
2.0A Buck Regulator
TI
Part Number
LM2832Z
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1
4.7µH, 2.7A
Coilcraft
DS3316P-472
R2
10.0kΩ, 1%
Vishay
CRCW08051002F
R1
10.0kΩ, 1%
Vishay
CRCW08051002F
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832X Dual Converters with Delayed Enabled Design Example 8
VIN
U1
C1
R3
VIND
VINA
L1
VO = 3.3V @ 2.0A
SW
EN
R1
D1
LM2832
C2
R2
GND
FB
U3
4
R6
3
LP3470M5X-3.08
LP3470
RESET
5
2
1
VIN
C7
U2
C3
VIND VINA
L2
VO = 1.2V @ 2.0A
SW
R4
LM2832
D2
C4
R5
EN
GND
FB
Figure 35. LM2832X (1.6MHz): Vin = 5V, Vo = 1.2V @ 2.0A & 3.3V @2.0A
Table 9. Bill of Materials
Part ID
Part Value
Manufacturer
Part Number
U1, U2
2.0A Buck Regulator
TI
LM2832X
U3
Power on Reset
TI
LP3470M5X-3.08
C1, C3 Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C2, C4 Output Cap
2x22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C7
Trr delay capacitor
TDK
D1, D2 Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
L1, L2
3.3µH, 2.7A
Coilcraft
ME3220-102
R2, R4, R5
10.0kΩ, 1%
Vishay
CRCW08051002F
R1, R6
45.3kΩ, 1%
Vishay
CRCW08054532F
R3
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832X Buck Converter & Voltage Double Circuit with LDO Follower Design Example 9
VO = 5.0V @ 150mA
L2
U2
LDO
D2
C6
U1
C3
LM2832
VIN = 5V
VIND
SW
VINA
GND
C1
EN
C5
C4
L1
R1
FB
VO = 3.3V @ 2.0A
C2
D1
R2
Figure 36. LM2832X (1.6MHz): Vin = 5V, Vo = 3.3V @ 2.0A & LP2986-5.0 @ 150mA
Table 10. Bill of Materials
26
Part ID
Part Value
Manufacturer
Part Number
U1
2.0A Buck Regulator
TI
LM2832X
U2
200mA LDO
TI
LP2986-5.0
C1, Input Cap
22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C2, Output Cap
2x22µF, 6.3V, X5R
TDK
C3216X5ROJ226M
C1608X5R0J225M
C3 – C6
2.2µF, 6.3V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 2A, 20VR
Diodes Inc.
B220/A
D2
0.4Vf Schottky 20VR, 500mA
ON Semi
MBR0520
L2
10µH, 800mA
CoilCraft
ME3220-103
L1
2.2µH, 3.5A
CoilCraft
DS3316P-222
R2
45.3kΩ, 1%
Vishay
CRCW08054532F
R1
10.0kΩ, 1%
Vishay
CRCW08051002F
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REVISION HISTORY
Changes from Original (April 2013) to Revision A
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 26
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PACKAGE OPTION ADDENDUM
www.ti.com
8-Oct-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM2832XMY
NRND
MSOPPowerPAD
DGN
8
1000
TBD
Call TI
Call TI
-40 to 125
SLBB
LM2832XMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SLBB
LM2832XSD/NOPB
ACTIVE
WSON
NGG
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L196B
LM2832XSDX/NOPB
ACTIVE
WSON
NGG
6
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L196B
LM2832YMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SLCB
LM2832YSD/NOPB
ACTIVE
WSON
NGG
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L197B
LM2832ZMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SLDB
LM2832ZSD/NOPB
ACTIVE
WSON
NGG
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L198B
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
8-Oct-2015
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM2832XMY
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2832XMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2832XSD/NOPB
WSON
NGG
6
1000
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM2832XSDX/NOPB
WSON
NGG
6
4500
330.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM2832YMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2832YSD/NOPB
WSON
NGG
6
1000
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM2832ZMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2832ZSD/NOPB
WSON
NGG
6
1000
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM2832XMY
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM2832XMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM2832XSD/NOPB
WSON
NGG
6
1000
213.0
191.0
55.0
LM2832XSDX/NOPB
WSON
NGG
6
4500
367.0
367.0
35.0
LM2832YMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM2832YSD/NOPB
WSON
NGG
6
1000
213.0
191.0
55.0
LM2832ZMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM2832ZSD/NOPB
WSON
NGG
6
1000
213.0
191.0
55.0
Pack Materials-Page 2
MECHANICAL DATA
DGN0008A
MUY08A (Rev A)
BOTTOM VIEW
www.ti.com
MECHANICAL DATA
NGG0006A
SDE06A (Rev A)
www.ti.com
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