DYELEC DMG10N60-TR 600v n-channel power mosfet Datasheet

10N60
600V N-Channel Power MOSFET
●
RDS(ON)<0.9Ω @ VGS=10V
●
Fast switching capability
●
●
Low gate charge
Lead free in compliance with EU RoHS directive.
●
Green molding compound
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
ID (A)
0.9 @ VGS =10V
10
Pin Definition:
●
1. Gate
2. Drain
3. Source
Case: TO-220,ITO-220,TO-262,TO-263 Package
Ordering Information
Package
Packing
DMT10N60-TU
TO-220
50pcs / Tube
DMF10N60-TU
DMK10N60-TU
ITO-220
TO-262
50pcs / Tube
50pcs / Tube
DMG10N60-TU
TO-263
50pcs / Tube
DMG10N60-TR
TO-263
Part No.
Block Diagram
D
800pcs / 13" Reel
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
RATINGS
600
±30
UNIT
V
V
Continuous Drain Current
ID
10
A
Pulsed Drain Current (Note 2)
IDM
38
A
EAS
700
mJ
156
W
50
W
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
Avalanche Energy
Single Pulsed (Note 3)
TO-220/TO-262/TO-263
Power Dissipation
PD
ITO-220
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 30mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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10N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
RATING
UNIT
θJA
62.5
°C/W
TO-220/ITO-220
TO-262/TO-263
TO-220
0.85
θJC
Junction to Case
ITO-220
°C/W
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
TEST CONDITIONS
BVDSS
VGS=0V, ID=250μA
IDSS
VDS=600V, VGS 0V
=
IGSS
VG=30V, VDS 0V
=
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
=
Static Drain-Source On-State Resistance
RDS(ON)
9*S=10V, ID 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD =300V, ID =10A,
Turn-On Rise Time
tR
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, ID=10A,
Gate-Source Charge
QGS
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0 V, IS =10A
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS=0V, IS=10A,
dIF/dt =100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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MIN TYP MAX UNIT
600
V
2.0
0.76
1
µA
100
-100
nA
nA
4.0
0.9
V
Ω
1570
166
18
pF
pF
pF
23
69
144
77
44
6.7
18.5
ns
ns
ns
ns
nC
nC
nC
450
4.2
1.4
V
10
A
40
A
ns
μC
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10N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* SD controlled by pulse period
* D.U.T.-D vice Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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10N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
VGS
90%
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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10N60
600V N-Channel Power MOSFET
Capacitance, (pF)
Gate-Source Voltage, VCG (V)
TYPICAL CHARACTERISTICS
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10N60
600V N-Channel Power MOSFET
Drain Current, ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
-1
10
0.1
0.05
0.02
PDW
0.01
Single pulse
10-2
10-5
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10-4
t1
t2
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
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100
101
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10N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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10N60
600V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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10N60
600V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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