DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) Max Package -20V 52mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V SOT23 ID TA = +25°C -5.0A -3.6A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) Backlighting Power Management Functions DC-DC Converters Motor Control D D G S G S Top View Top View Internal Schematic Ordering Information (Note 5) Part Number DMG2305UXQ-7 DMG2305UXQ-13 Notes: Compliance Automotive Automotive Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2009 W Jan 1 ~ ~ Feb 2 DMG2305UXQ Document number: DS38238 Rev. 1 - 2 Mar 3 YM 23X 23X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D November 2016 © Diodes Incorporated DMG2305UXQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -20 ±8 -4.2 -3.3 ID A -5.0 -4.0 -10 ID Pulsed Drain Current (Note 7) Units V V IDM A A Thermal Characteristics Characteristic Symbol PD Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State t<10s Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Electrical Characteristics Value 1.4 90 64 33 -55 to +150 RθJA RθJC TJ, TSTG Unit W °C/W °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -1.0 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.5 RDS(ON) mΩ |YFS| -0.9 52 100 200 V Static Drain-Source On-Resistance — 40 52 68 9 VDS = VGS, ID = -250µA VGS = -4.5V, ID = -4.2A VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2A VDS = -5V, ID = -4A CISS COSS CRSS RG 808 85 77 15.2 pF pF pF Ω QG QGS QGD tD(ON) tR tD(OFF) tF 10.2 1.3 2.2 10.8 13.7 79.3 34.7 nC nC nC ns ns ns ns Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S Test Condition VDS = -15V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -4V, ID = -3.5A VDS = -4V, VGS = -4.5V, RG = 6Ω, ID = -1A 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing DMG2305UXQ Document number: DS38238 Rev. 1 - 2 2 of 6 www.diodes.com November 2016 © Diodes Incorporated DMG2305UXQ 20.0 18.0 VDS = -5.0V VGS = -4.5V TA = -55°C TA = 25°C TA = 150°C VGS = -2.0V 16.0 VGS = -3.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VGS = -8.0V 14.0 12.0 VGS = -2.5V VGS = -1.8V 10.0 8.0 VGS = -1.5V 6.0 TA = 85°C 15 TA = 125°C 10 5 4.0 VGS = -1.2V 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.1 0.08 VGS = -2.5V 0.06 0.04 VGS = -4.5V 0.02 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 VGS = -4.5V ID = -10A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMG2305UXQ Document number: DS38238 Rev. 1 - 2 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 -V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.08 VGS = -4.5V 0.07 TA = 125°C TA = 150°C 0.06 TA = 85°C 0.05 TA = 25°C 0.04 TA = -55°C 0.03 0.02 0.01 0 20 VGS = -2.5V ID = -5.0A 1.2 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0.0 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 2.0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.09 0.08 VGS = -2.5V ID = -5A 0.07 0.06 0.05 VGS = -4.5V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2016 © Diodes Incorporated DMG2305UXQ 20 18 16 1.2 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.5 0.9 -ID = 1mA 0.6 -ID = 250µA 0.3 14 12 10 8 TA= 25C 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature DMG2305UXQ Document number: DS38238 Rev. 1 - 2 4 of 6 www.diodes.com 0 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current November 2016 © Diodes Incorporated DMG2305UXQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G F Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMG2305UXQ Document number: DS38238 Rev. 1 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com November 2016 © Diodes Incorporated DMG2305UXQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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