Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 1/12 CYStech Electronics Corp. N- and P-Channel Enhancement Mode Power MOSFET MTC6604N6 BVDSS ID RDSON(TYP.) Features N-CH 20V 4.3A(VGS=4.5V) 29mΩ(VGS=4.5V) 36mΩ(VGS=2.5V) 53mΩ(VGS=1.8V) P-CH -20V -3.8A(VGS=-4.5 V) 42mΩ(VGS=-4.5V) 54mΩ(VGS=-2.5V) 64mΩ(VGS=-1.8V) • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTC6604N6 SOT-26 D1 S1 G：Gate S：Source D：Drain D2 G1 S2 G2 Ordering Information Device MTC6604N6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTC6604N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 2/12 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature BVDSS VGS ID IDM PD Tj, Tstg Limits N-channel P-channel 20 -20 ±8 ±8 4.3 -3.8 3.4 -3.0 25 -22 1.14 0.01 -55~+150 Unit V A W W / °C °C Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 20 0.5 - 0.02 29 36 53 6.2 1.0 ±100 1 10 40 55 75 - V V/°C V nA S VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS=VGS, ID=250μA VGS=±8V, VDS=0V VDS=20V, VGS=0V VDS=16V, VGS=0V, Tj=70°C ID=3A, VGS=4.5V ID=2A, VGS=2.5V ID=1.5A, VGS=1.8V VDS=5V, ID=3A 327 45 42 5 15 24.6 6.4 5.9 0.6 2.0 - pF VDS=15V, VGS=0V, f=1MHz ns VDS=10V, ID=3A, VGS=4.5V, RG=3.3Ω nC VDS=15V, ID=3A, VGS=4.5V 0.79 6.7 2.8 1.2 - V ns nC VGS=0V, IS=1A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - μA mΩ IF=3A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC6604N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 3/12 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS Min. Typ. Max. Unit Test Conditions -20 -0.4 - -0.01 42 54 64 9 -1.0 ±100 -1 -25 55 85 130 - V V/°C V nA S VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS=VGS, ID=-250μA VGS=±8V, VDS=0V VDS=-20V, VGS=0V VDS=-16V, VGS=0V, Tj=70°C ID=-3A, VGS=-4.5V ID=-2A, VGS=-2.5V ID=-1A, VGS=-1.8V VDS=-5V, ID=-3A 658 72 61 9.2 18.8 48.4 12 9.9 1.2 2.7 - pF VDS=-15V, VGS=0V, f=1MHz ns VDS=-10V, ID=-3A, VGS=-4.5V, RG=3.3Ω nC VDS=-15V, ID=-3A, VGS=-4.5V -0.79 7.1 2.7 -1 - V ns nC VGS=0V, IS=-1A IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - μA mΩ IF=-3A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 80 110 Unit (Note ) °C/W Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad MTC6604N6 CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 4/12 CYStech Electronics Corp. N-channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 25 BVDSS, Normalized Drain-Source Breakdown Voltage 7V, 6V, 5V, 4V, 3V ID, Drain Current(A) 20 VGS=2.5V 15 VGS=2V 10 5 1.2 1.0 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 -75 5 -50 -25 VDS, Drain-Source Voltage(V) 1000 50 75 100 125 150 175 1.2 VGS=1.8V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 25 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current VGS=2.5V 100 VGS=4.5V 0.01 0.1 VGS=0V 1.0 Tj=25°C 0.8 0.6 0.4 1 10 ID, Drain Current(A) 0 100 1 2 3 4 IDR , Reverse Drain Current(A) 5 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 R DS(on), Normalized Static DrainSource On-State Resistance 1.8 180 ID=3A 160 140 120 100 80 60 40 20 1.6 VGS=4.5V, ID=3A 1.4 1.2 1.0 0.8 0.6 RDS(ON) @Tj=25°C : 29mΩ typ. 0.4 0 0 MTC6604N6 Tj=150°C 0.2 10 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 Tj, Junction Temperature(°C) 1 2 3 4 5 6 VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 5/12 CYStech Electronics Corp. N-channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.6 VGS(th), NormalizedThreshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=1mA 1.0 0.8 ID=250μA 0.6 0.4 10 0 4 -75 -50 -25 20 8 12 16 VDS, Drain-Source Voltage(V) 50 75 100 125 150 175 Gate Charge Characteristics 50 10 ID=3A 30 20 10 0 0.001 8 VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=110°C/W 40 Power (W) 25 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient VDS=15V 6 4 2 0 0.01 0.1 1 Pulse Width(s) 10 0 100 ID, Maximum Drain Current(A) RDS(ON) Limited 100μs 1 10ms 100ms 0.01 0.01 TA=25°C, Tj=150°C, VGS=4.5V, RθJA=110°C/W Single Pulse DC 8 10 12 14 5.0 4.0 3.0 2.0 1.0 TA=25°C, VGS=4.5V, RθJA=110°C/W 0.0 0.1 1 10 VDS, Drain-Source Voltage(V) MTC6604N6 6 6.0 1ms 0.1 4 Maximum Drain Current vs JunctionTemperature 100 10 2 Qg, Total Gate Charge(nC) Maximum Safe Operating Area ID, Drain Current(A) 0 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 6/12 N-channel Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Typical Transfer Characteristics 10 GFS , Forward Transfer Admittance(S) 25 VDS=5V ID, Drain Current(A) 20 15 10 5 0 0 1 2 3 VGS, Gate-Source Voltage(V) 4 VDS=5V 1 VDS=10V 0.1 Pulsed Ta=25°C 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 10 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=11 0°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTC6604N6 CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 7/12 CYStech Electronics Corp. P-channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 20 -BVDSS, Normalized Drain-Source Breakdown Voltage 7V, 6V, 5V, 4V, 3V -ID, Drain Current (A) 16 -VGS=2.5V 12 8 -VGS=2V 4 1.4 1.2 1.0 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-1.8V 100 VGS=-2.5V Tj=25°C VGS=0V 1.0 0.8 Tj=150°C 0.6 0.4 VGS=-4.5V 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 0 10 300 4 6 8 -IDR, Reverse Drain Current (A) 10 R DS(ON), Normalized Static DrainSource On-State Resistance 1.6 ID=-3A 250 200 150 100 50 1.4 VGS=-4.5V, ID=-3A 1.2 1.0 0.8 0.6 RDS(ON) @Tj=25°C : 42mΩ typ. 0.4 0 0 MTC6604N6 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 8/12 CYStech Electronics Corp. P-channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) ,Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=-1mA 1.0 0.8 0.6 ID=-250μA 0.4 10 0 4 -75 -50 -25 20 8 12 16 -VDS, Drain-Source Voltage(V) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient Gate Charge Characteristics 50 10 ID=-3A TJ(MAX) =150°C TA=25°C RθJA=110°C/W 30 20 10 0 0.001 8 -VGS, Gate-Source Voltage(V) Power (W) 40 VDS=-15V 6 4 2 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs JunctionTemperature 100 4.0 10 -I D, Maximum Drain Current(A) -I D, Drain Current (A) 4 100μs RDS(ON) Limited 1ms 1 10ms TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=110°C/W Single Pulse 0.1 100ms DC 0.01 3.5 3.0 2.5 2.0 1.5 1.0 TA=25°C, VGS=-4.5V, RθJA=110°C/W 0.5 0.0 0.01 MTC6604N6 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 9/12 CYStech Electronics Corp. P-channel Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Typical Transfer Characteristics 10 GFS, Forward Transfer Admittance-(S) ID, Drain Current(A) 20 VDS=-5V 16 12 8 4 0 0 1 2 3 VGS, Gate-Source Voltage(V) 4 VDS=-5V 1 VDS=-10V 0.1 Pulsed Ta=25°C 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=110 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) Recommended Soldering Footprint MTC6604N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 10/12 Reel Dimension Carrier Tape Dimension MTC6604N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 11/12 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC6604N6 CYStek Product Specification Spec. No. : C093N6 Issued Date : 2016.04.12 Revised Date : Page No. : 12/12 CYStech Electronics Corp. SOT-26 Dimension Marking: Device Name ● 6604 □□□□ ● Date Code 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1) Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 DIM A A1 A2 b c D Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 DIM E E1 e e1 L θ Millimeters Min. Max. 1.500 1.700 2.650 2.950 0.950 (BSC) 1.800 2.000 0.300 0.600 0° 8° Inches Min. Max. 0.059 0.067 0.104 0.116 0.037 (BSC) 0.071 0.079 0.012 0.024 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC6604N6 CYStek Product Specification