HMC618ALP3E v00.1014 AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Typical Applications Features The HMC618ALP3E is ideal for: Noise Figure: 0.75 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure OIP3: 36 dBm • Repeaters and Femto Cells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9 mm2 Functional Diagram General Description The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). Electrical Specifications TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V Parameter Vdd = 5 Vdc Min. Frequency Range Gain Typ. Max. Min. 1200 - 1700 19 Gain Variation Over Temperature Typ. Max. Min. 1700 - 2000 23 16 0.012 13.5 MHz 17 dB 0.008 dB/°C Noise Figure 0.65 22.5 18 19.5 dB Output Return Loss 13 12.5 10 dB Output Power for 1 dB Compression (P1dB) 19 18 20 dBm 20.5 dBm 30.4 35.5 dBm Output Third Order Intercept (IP3) 16.5 20.5 29.4 89 20 0.85 20.5 33.5 Supply Current (Idd) 1.1 Units Input Return Loss Saturated Output Power (Psat) 0.75 Max. 2000 - 2200 19 0.008 0.85 Typ. 29.5 118 35 89 118 89 1.15 118 dB mA * Rbias resistor sets current, see application circuit herein 7-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TA = +25° C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V Vdd = 3 Vdc Parameter Min. Frequency Range Typ. Max. Min. Typ. 1200 - 1700 Gain 18 Min. 1700 - 2000 22 Gain Variation Over Temperature Max. 15 12.5 0.009 15.8 dB 0.009 dB/°C 0.8 26 17 19 dB Output Return Loss 14 13 11 dB 15 dBm dBm 15 12 1.2 MHz Input Return Loss 10 0.9 Units Noise Figure Output Power for 1 dB Compression (P1dB) 1.1 Max. 2000 - 2200 18 0.009 Typ. 15 0.9 13 Saturated Output Power (Psat) 16 16 16 Output Third Order Intercept (IP3) 28 28 28 Supply Current (Idd) 47 65 47 65 1.2 dB dBm 47 65 mA * Rbias resistor sets current, see application circuit herein 1700 to 2200 MHz Tune Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1] 26 24 S21 22 20 GAIN (dB) RESPONSE (dB) 16 6 S22 -4 AMPLIFIERS - LOW NOISE - SMT 7 Electrical Specifications 18 16 S11 -14 -24 0.8 14 12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 FREQUENCY (GHz) Vdd=5V Vdd=3V +25 C +85 C 2.3 - 40 C 0 22 20 RETURN LOSS (dB) -5 18 GAIN (dB) 2.2 Input Return Loss vs. Temperature [1] Gain vs. Temperature [2] 16 14 -10 -15 -20 12 -25 10 1.6 1.9 2 2.1 FREQUENCY (GHz) 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm +85 C 2.2 2.3 - 40 C 1.6 1.7 1.8 +25 C 1.9 2 2.1 FREQUENCY (GHz) +85 C 2.2 2.3 - 40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7-2 HMC618ALP3E v00.1014 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1700 to 2200 MHz Tune Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 -5 -10 ISOLATION (dB) RETURN LOSS (dB) -5 -10 -15 -15 -20 -25 -30 -20 -35 -25 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) +25 C 2.2 +85 C 2.3 1.6 1.9 2 2.1 FREQUENCY (GHz) 2.2 +85 C 2.3 - 40 C Output P1dB vs. Temperature [1] [2] 24 1.4 22 Vdd=5V 1.2 +85C P1dB (dBm) 20 +25 C 1 0.8 0.6 -40C 18 16 Vdd=3V 14 0.4 12 0.2 10 0 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) Vdd=5V 2.2 2.3 1.6 1.7 Vdd=3V 1.8 1.9 FREQUENCY (GHz) +25 C Psat vs. Temperature [1] [2] 2 +85 C 2.1 - 40 C Output IP3 vs. Temperature [1] [2] 24 40 Vdd=5V 38 22 Vdd=5V 36 20 Vdd=3V 18 IP3 (dBm) Psat (dBm) 1.8 +25 C 1.6 1.6 1.7 - 40 C Noise Figure vs Temperature [1] [2] [3] NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 0 16 14 34 32 30 28 12 26 Vdd=3V 24 10 1.6 1.7 1.8 +25 C 1.9 2 2.1 FREQUENCY (GHz) +85 C 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) -40 C +25 C +85 C - 40 C [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] Measurement reference plane shown on evaluation PCB drawing. 7-3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [2] 38 140 37 120 36 120 35 100 34 100 33 80 32 80 31 60 30 60 29 40 28 40 27 20 26 20 0 24 25 4.5 5 IP3 (dBm) 140 5.5 0 4.5 5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) IP3 Idd Idd Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [2] 38 140 37 120 36 120 35 100 34 100 33 80 32 80 31 60 30 60 29 40 28 40 27 20 26 20 0 24 25 4.5 5 IP3 (dBm) 140 0 4.5 5.5 5 IP3 IP3 Idd Idd 20 105 15 100 10 95 5 90 85 0 -6 -4 -2 0 2 4 25 77 20 70 15 63 10 56 5 49 42 0 -14 -12 -10 INPUT POWER (dBm) Pout Gain -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) PAE Idd [1] Vdd = 5V, Rbias = 470 Ohm Idd (mA) 110 Idd (mA) 25 Power Compression @ 1700 MHz [2] Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 1700 MHz [1] -8 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) -10 Idd (mA) 39 Idd (mA) IP3 (dBm) 5.5 IP3 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [1] Pout(dBm), GAIN(dB), PAE(%) Idd (mA) 39 Idd (mA) IP3 (dBm) Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [1] AMPLIFIERS - LOW NOISE - SMT 7 1700 to 2200 MHz Tune Pout Gain PAE Idd [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7-4 HMC618ALP3E v00.1014 1700 to 2200 MHz Tune 25 110 20 105 15 100 10 95 5 90 85 0 -13 Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 2100 MHz [2] -10 -7 -4 -1 2 25 79 20 72 15 65 10 58 5 51 44 0 5 -13 -11 -9 INPUT POWER (dBm) Pout -7 -5 PAE Pout 1 3 5 Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [2] 24 1.2 24 1 22 1 22 0.8 20 0.8 20 0.6 18 0.6 18 0.4 16 0.4 16 0.2 14 0.2 GAIN (dB) & P1dB (dBm) 1.2 0 5 VOLTAGE SUPPLY (V) GAIN 0 12 5.5 2.7 P1dB 3 VOLTAGE SUPPLY (V) GAIN Noise Figure 3.3 P1dB Noise figure Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [1] Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [2] 1.2 24 1 22 1 22 0.8 20 0.8 20 0.6 18 0.6 18 0.4 16 0.4 16 0.2 14 0.2 0 14 5 VOLTAGE SUPPLY (V) GAIN 5.5 P1dB Noise Figure [1] Vdd = 5V, Rbias = 470 Ohm GAIN (dB) & P1dB (dBm) 24 0 12 2.7 NOISE FIGURE (dB) 1.2 NOISE FIGURE (dB) 26 4.5 NOISE FIGURE (dB) 26 NOISE FIGURE (dB) GAIN (dB) & P1dB (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [1] GAIN (dB) & P1dB (dBm) -1 Idd 14 7-5 -3 INPUT POWER (dBm) Gain Idd 4.5 Idd (mA) Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 2100 MHz [1] Idd (mA) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 3 VOLTAGE SUPPLY (V) GAIN 3.3 P1dB Noise Figure [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Gain, Noise Figure vs. Rbias @ 1700 MHz 22 1.2 40 21 1 35 20 0.8 19 0.6 25 18 0.4 20 17 0.2 GAIN (dB) 45 30 15 100 1000 100 Rbias(Ohms) Vdd=5V 0 16 10000 1000 10000 Rbias(Ohms) Vdd=3V Vdd=3V Output IP3 vs. Rbias @ 2100 MHz Vdd=5V Gain, Noise Figure vs. Rbias @ 2100 MHz 45 40 1 20 0.8 GAIN (dB) IP3 (dBm) 30 19 0.6 18 0.4 17 0.2 25 20 1000 10000 Rbias(Ohms) Vdd=5V [1] Vdd = 5V, Rbias = 470 Ohm NOISE FIGURE (dB) 21 35 15 100 NOISE FIGURE (dB) IP3 (dBm) Output IP3 vs. Rbias @ 1700 MHz 7 AMPLIFIERS - LOW NOISE - SMT 1700 to 2200 MHz Tune 0 16 100 1000 10000 Rbias(Ohms) Vdd=3V Vdd=3V Vdd=5V [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7-6 HMC618ALP3E v00.1014 1200 to 1700 MHz Tune Gain vs. Temperature [2] 28 28 26 26 24 24 GAIN (dB) GAIN (dB) Gain vs. Temperature [1] 22 22 20 20 18 18 16 16 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 +85 C 1.7 1 1.8 1.2 -5 RETURN LOSS (dB) -5 -10 -15 -20 -25 1.8 - 40 C -15 -20 -25 1 1.1 1.2 1.3 1.4 +25 C 1.5 1.6 1.7 -30 1.8 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) +85 C -40 C Output Return Loss vs. Temperature [1] +25 C 0 0 -4 -4 -8 -12 -16 +85 C -40 C Output Return Loss vs. Temperature [2] RETURN LOSS (dB) RETURN LOSS (dB) +85 C 1.7 -10 FREQUENCY (GHz) -8 -12 -16 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -20 1 1.1 1.2 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm 7-7 1.6 Input Return Loss vs. Temperature [2] 0 -20 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 0 -30 1.1 - 40 C Input Return Loss vs. Temperature [1] RETURN LOSS (dB) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz +85 C 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) -40 C +25 C +85 C -40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Reverse Isolation vs. Temperature [2] 0 0 -10 -10 ISOLATION (dB) ISOLATION (dB) Reverse Isolation vs. Temperature -20 -30 -40 -50 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 1 1.1 - 40 C 1.2 +25 C Noise Figure vs. Temperature [1] 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 +85 C 1.8 - 40 C Noise Figure vs. Temperature [2] 1.6 1.6 1.4 1.4 1.2 1.2 NOISE FIGURE (dB) NOISE FIGURE (dB) -30 -40 -50 1 0.8 0.6 0.4 0.2 1 0.8 0.6 0.4 0.2 0 0 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 +85 C 1.7 1.8 1 1.1 - 40 C Output P1dB vs. Temperature [1] 1.2 +25 C 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 +85 C 1.8 - 40 C Output P1dB vs. Temperature [2] 22 22 20 20 18 18 P1dB (dBm) P1dB (dBm) -20 7 AMPLIFIERS - LOW NOISE - SMT 1200 to 1700 MHz Tune [1] 16 14 16 14 12 12 10 10 8 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm +85 C 1.6 1.7 1.8 - 40 C 1 1.1 1.2 +25 C 1.3 1.4 1.5 FREQUENCY (GHz) +85 C 1.6 1.7 1.8 - 40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7-8 HMC618ALP3E v00.1014 1200 to 1700 MHz Tune Psat vs. Temperature [2] 23 23 21 21 19 19 Psat (dBm) Psat (dBm) Psat vs. Temperature [1] 17 15 17 15 13 13 11 11 9 9 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 1 1.1 - 40 C 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 - 40 C Output IP3 vs. Temperature [2] Output IP3 vs. Temperature [1] 38 38 36 36 34 34 32 32 IP3 (dBm) IP3 (dBm) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 30 28 30 28 26 26 24 24 22 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1 1.1 1.2 FREQUENCY (GHz) +25 C +85 C 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) - 40 C +25 C +85 C - 40 C Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd1 = Vdd2 (V) 3V 5V Rbias Min (Ohms) 1K [3] 0 Max (Ohms) Open Circuit Open Circuit R1 (Ohms) Idd1 + Idd2 (mA) 1k 28 1.5k 34 10k 47 120 71 270 84 470 89 [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. 7-9 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 9.68 mW/°C above 85 °C) 0.63 W Thermal Resistance (channel to ground paddle) Storage Temperature Typical Supply Current vs. Vdd Rbias = 10 KOhm for 3V Rbias = 470 Ohm for 5V Vdd (Vdc) Idd (mA) 2.7 35 3.0 47 3.3 58 103.4 °C/W 4.5 72 -65 to +150 °C 5.0 89 Operating Temperature -40 to +85 °C 5.5 106 ESD Sensitivity (HBM) Class 1A, Passed 250V Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT 7 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] 618 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7 - 10 HMC618ALP3E v00.1014 AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Pin Description Pin Number Function Description 1, 3 - 5, 7, 9, 12, 14, 16 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 10 GND This pin and ground paddle must be connected to RC/DC ground. 8 RES This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is matched to 50 Ohms. 13, 15 Vdd2, Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 1000 pF, and 0.47 µF are required. Interface Schematic Application Circuit, 1700 to 2200 MHz Tune [1] Vdd = 5V, Rbias = 470 Ohm 7 - 11 [2] Vdd = 3V, Rbias = 10K Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB, 1700 to 2200 MHz Tune Evaluation PCB Ordering Information Item Evaluation PCB Content HMC618ALP3E Evaluation PCB List of Materials for Evaluation PCB Part Number EV2HMC618ALP3 The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 µF Capacitor, Tantalum L1 15 nH, Inductor, 0603 Pkg. L3 6.8 nH, Inductor, 0603 Pkg. C6 220 pF Capacitor, 0402 Pkg. C1 10 nF Capacitor, 0402 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [2] 120586 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7 - 12 HMC618ALP3E v00.1014 Application Circuit, 1200 to 1700 MHz Tune AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 - 13 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB, 1200 to 1700 MHz Tune Evaluation PCB Ordering Information Item Evaluation PCB Content HMC618ALP3E Evaluation PCB List of Materials for Evaluation PCB Part Number EV1HMC618ALP3 The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C1 10 nF Capacitor, 0402 Pkg. C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 µF Capacitor, 0603 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 3 pF Capacitor, 0402 Pkg. L1 27 nH, Inductor, 0603 Pkg. L2 5.6 nH, Inductor, 0603 Pkg. L3 18 nH, Inductor, 0603 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [1] 600-00077-00 Evaluation PCB [1] Circuit Board Material: Rogers 4350. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: [email protected] 7 - 14