AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR) SDRAM 32Mx16 (8M x 16 x 4 Banks) 512Mbit Single-Data-Rate (SDR) SDRAM AS4C32M16SA-7TCN & AS4C32M16SA-7TIN 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 1|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR) SDRAM 32Mx16 (8M x 16 x 4 Banks) REVISION HISTORY Rev. 1.0 March 2012 initial version Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents Rev. 2.0 February 2014 Die Shrink – A revision Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 2|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR) SDRAM 32Mx16 (8M x 16 x 4 Banks) Overview This section gives an overview of the 512M SDRAM product and describes its main characteristics. Features 4 banks x 8Mbit x 16 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 3 Programmable Wrap Sequence: Sequential or Interleave Programmable Burst Length: 1, 2, 4, 8 and full page for Sequential Type 1, 2, 4, 8 for Interleave Type Multiple Burst Read with Single Write Operation Automatic and Controlled Pre-charge Command Random Column Address every CLK (1-N Rule) Power Down Mode Auto Refresh and Self Refresh Refresh Interval: 8192 cycles/64 ms Available in 54 Pin TSOP II LVTTL Interface Single +3.3 V ±0.3 V Power Supply ROHS Compliant* Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 3|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR) SDRAM 32Mx16 (8M x 16 x 4 Banks) Table 1 - Performance Table -7 System Frequency (fCK) 143 MHz Clock Cycle Time (tCK3) 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns Clock Access Time (tAC2) CAS Latency = 2 6 ns Description The AS4C32M16SA is a four bank Synchronous DRAM organized as 4 banks x 8Mbit x 16. The AS4C32M16SA achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an inter-leaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 166 MHz is possible depending on burst length, CAS latency and speed grade of the device. Table 2 – Ordering Information for ROHS Compliant Products Product part No AS4C32M16SA-7TCN Org 32 x 16 AS4C32M16SA-7TIN 32 x 16 Temperature Commercial 0°C to 70°C Industrial -40°C to 85°C Max Clock (MHz) 143 Package 54pin TSOP II 143 54pin TSOP II Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 4|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR) SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 5|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 6|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 7|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 8|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Power On and Initialization The default power on state of the mode register is supplier specific and may be undefined. The following power on and initialization sequence guarantees the device is preconditioned to each user’s specific needs. Like a conventional DRAM, the Synchronous DRAM must be powered up and initialized in a predefined manner. During power on, all VCC and VCCQ pins must be built up simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on voltage must not exceed VCC+0.3V on any of the input pins or VCC supplies. The CLK signal must be started at the same time. After power on, an initial pause of 200 ms is required followed by a precharge of both banks using the precharge command. To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. A minimum of two Auto Refresh cycles (CBR) are also required. These may be done before or after programming the Mode Register. Failure to follow these steps may lead to unpredictable start-up modes. Programming the Mode Register The Mode register designates the operation mode at the read or write cycle. This register is divided into 4 fields. A Burst Length Field to set the length of the burst, an Addressing Selection bit to program the column access sequence in a burst cycle (interleaved or sequential), a CAS Latency Field to set the access time at clock cycle and a Operation mode field to differentiate between normal operation (Burst read and burst Write) and a special Burst Read and Single Write mode. The mode set operation must be done before any activate command after the initial power up. Any content of the mode register can be altered by re-executing the mode set command. All banks must be in pre-charged state and CKE must be high at least one clock before the mode set operation. After the mode register is set, a Standby or NOP command is required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate the mode set operation. Address input data at this timing defines parameters to be set as shown in the previous table. Read and Write Operation When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the wordline are set. A CAS cycle is triggered by setting RAS high and CAS low at a clock timing after a necessary delay, tRCD, from the RAS timing. WE is use d to define either a read (WE = H) or a write (WE = L) at this stage. SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or write operations are allowed at up to a 166 MHz data rate. The numbers of serial data bits are the burst length programmed at the mode set operation, i.e., one of 1, 2, 4, 8 and full page. Column addresses are segmented by the burst length and serial data accesses are done within this boundary. The first column address to be accessed is supplied at the CAS timing and the subsequent addresses are generated automatically by the programmed burst length and its sequence. For example, in a burst length of 8 with interleave sequence; if the first ad-dress is ‘2’, then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5. Full page burst operation is only possible using sequential burst type. Full Page burst operation does not terminate once the burst length has been reached. (At the end of the page, it will wrap to the start address and continue.) In other words, unlike burst length of 2, 4, and 8, full page burst continues until it is terminated using another command. Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 9|Page AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column address are possible once the RAS cycle latches the sense amplifiers. The maximum t RAS or the refresh interval time limits the number of random column accesses. A new burst access can be done even before the previous burst ends. The interrupt operation at every clock cycles is supported. When the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. An interrupt which ac-companies with an operation change from a read to a write is possible by exploiting DQM to avoid bus contention. When two or more banks are activated sequentially, interleaved bank read or write operations are possible. With the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. Once two or more banks are activated, column to column interleave operation can be done between different pages. Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 10 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 11 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 12 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 13 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Recommended Operation and Characteristics for LV-TTL VSS = 0 V; VCC, VCCQ = 3.3 V ± 0.3 V Limit Values Parameter Input high voltage Input low voltage Output high voltage (IOUT = – 4.0 mA) Output low voltage (IOUT = 4.0 mA) Input leakage current, any input (0 V < VIN < 3.6 V, all other inputs = 0 V) Output leakage current (DQ is disabled, 0 V < VOUT < VCC) Symbol min. max. Unit Notes IH 2.0 Vcc+0.3 V 1, 2 IL – 0.3 0.8 V 1, 2 OH 2.4 – V OL – 0.4 V I(L) –2 2 uA O(L) –2 2 uA V V V V I I Note: All voltages are referenced to VSS. VIH may overshoot to VCC + 2.0 V for pulse width of < 4ns with 3.3V. VIL may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference. Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 14 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Operating Currents VCC = 3.3 V ± 0.3 V ( Recommended Operating Conditions unless otherwise noted ) Max. Symbol ICC1 Parameter & Test Condition Operating Current t RC =t RCMIN. ,t RC =t CKMIN . -7 1 bank operation ICC2PS ICC2N ICC2NS ICC3N ICC3P Note mA 1 mA 1 mA 1 240 Active-precharge command cycling, without Burst Operation ICC2P Unit Precharge Standby Current in Power Down Mode tCK = min. CS =VIH, CKE≤ VIL(max) tCK = Infinity Precharge Standby Current in Non-Power Down Mode tCK = min. CS =VIH, CKE≥ VIL(max) tCK = Infinity No Operating Current tCK = min, CS = VIH(min) bank ; active state ( 4 banks) CKE ≤ V CKE ≥ V IH(MIN.) IL(MAX.) (Power down mode) 7 5 58 48 mA mA 75 mA 35 mA ICC4 Burst Operating Current tCK = min Read/Write command cycling 170 ICC5 Auto Refresh Current tCK = min Auto Refresh command cycling 160 ICC6 Self Refresh Current Self Refresh Mode, CKE≤ 0.2V 6 mA 1,2 mA 1 mA Notes: These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during t CK. These parameter depend on output loading. Specified values are obtained with output open. Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 15 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) AC Characteristics 1,2, 3 VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns Limit Values -7 # Symbol Parameter Min. Max. Unit Note Clock and Clock Enable t 1 CK t 2 CK t 3 4 AC t 7 – ns CAS Latency = 2 10 – ns CAS Latency = 3 – 143 MHz CAS Latency = 2 – 100 MHZ Clock Frequency Access Time from Clock 2, 3 CAS Latency = 3 – 5.4 ns CAS Latency = 2 – 6 ns Clock High Pulse Width 2.5 – ns CL Clock Low Pulse Width 2.5 – ns T Transition Time 0.3 1.5 ns t 6 CAS Latency = 3 CH t 5 Clock Cycle Time Setup and Hold Times t 7 8 9 10 11 12 13 14 IS Input Setup Time 1.5 – ns 4 IH Input Hold Time 0.8 – ns 4 CKS CKE Setup Time 1.5 – ns 4 CKH CKE Hold Time 0.8 – ns 4 MRD Mode Register Set Command Cycle Time 2 – CLK SB Power Down Mode Entry Time 0 7 ns DS Data-in Setup Time 1.5 – ns DH Data-in Hold Time 0.8 – ns t t t t t t t Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 16 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Common Parameters 15 16 17 18 19 20 t RCD Row to Column Delay Time 15 – ns 5 Row Precharge Time 15 – ns 5 RAS Row Active Time 45 100K ns 5 RC Row Cycle Time 65 – ns 5 RRD Activate(a) to Activate(b) Command Period 15 – ns 5 CCD CAS(a) to CAS(b) Command Period 1 – CLK DPL Data-in to Precharge Command for Manual precharge 2 – CLK Refresh Period (8192 cycles) — 64 ms Self Refresh Exit Time 1 — CLK t t RP t t t t 21 Refresh Cycle 22 23 t t REF SREX Read Cycle Limit Values -7 # Symbol t 24 26 27 OH Data Out Hold Time LZ HZ t 25 t t Parameter DQZ Min. Max. Unit Note 2 2.5 – ns Data Out to Low Impedance Time 1 – ns Data Out to High Impedance Time 3 7 ns DQM Data Out Disable Latency – 2 CLK Write Recovery Time for Auto precharge 2 – CLK DQM Write Mask Latency 0 – CLK Write Cycle 28 29 t t WR DQW Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 17 | P a g e 6 AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Notes for AC Parameters: 1. For proper power-up see the operation section of this data sheet. 2. AC timing tests have VIL = 0.4V and VIH = 2.4V with the timing referenced to the 1.4 V crossover point. The transition time is measured between VIH and VIL. All AC measurements assume tT = 1ns with the AC output load circuit shown in Figure 1. tCK VIH CLK + 1.4 V VIL tIS tT tIH 50 Ohm 1.4V COMMAND Z=50 Ohm tAC tLZ I/O tAC 50 pF tOH 1.4V OUTPUT tHZ Figure 1. 3. If clock rising time is longer than 1 ns, a time (tT/2 – 0.5) ns has to be added to this parameter. 4. If tT is longer than 1 ns, a time (tT – 1) ns has to be added to this parameter. 5. These parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycle = specified value of timing period (counted in fractions as a whole number) Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. 6. Referenced to the time which the output achieves the open circuit condition, not to output voltage levels. Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 18 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 19 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 20 | P a g e AS4C32M16SA Version 2.0 (SDR)SDRAM 512Mbit Single-Data-Rate 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 21 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 22 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 23 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 24 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 25 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 26 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 27 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 28 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 29 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 30 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 31 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 32 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 33 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 34 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 35 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 36 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 37 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 38 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 39 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 40 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 41 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 42 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 43 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 44 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 45 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 46 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 47 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 48 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 49 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 50 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 51 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) PACKAGE DIAGRAM Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 52 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 53 | P a g e AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate (SDR)SDRAM 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice. Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 54 | P a g e