Diodes FZT558TA 400v pnp silicon planar medium power transistor in sot223 Datasheet

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Diodes Incorporated
Green
FZT558
400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
BVCEO > -400V
IC = -200mA high Continuous Current
Low saturation voltage VCE(sat) < -200mV @ -20mA
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
C
SOT223
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4)
Product
FZT558TA
Notes:
Marking
FZT558
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT
558
FZT558
Document number: DS33139 Rev.3 - 2
FZT558 = Product Type Marking Code
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FZT558
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-400
-400
-7
-200
Unit
V
V
V
mA
Value
2
3
62.5
41.7
19.41
-55 to +150
Unit
W
W
°C/W
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
PD
RθJA
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Notes:
RθJL
TJ, TSTG
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
Thermal Characteristics and Derating Information
50
T amb=25°C
60
25mm x 25mm
2oz FR4
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
70
Single Pulse
T amb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
30
D=0.5
20
Document number: DS33139 Rev.3 - 2
Single Pulse
D=0.2
10
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
1k
3.0
50mm x 50mm
2oz FR4
2.5
25mm x 25mm
2oz FR4
2.0
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
FZT558
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Max Power Dissipation (W)
Max Power Dissipation (W)
Transient Thermal Impedance
T amb=25°C
40
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
VBE(sat)
VBE(on)
DC current transfer Static ratio (Note 8)
Transitional Frequency (Note 8)
Output Capacitance (Note 8)
Switching times
Notes:
hFE
Min
-400
-400
-7
−
−
−
−
−
−
−
100
100
15
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−
−
−
-100
-100
-100
-0.2
-0.5
-0.9
-0.9
Unit
V
V
V
nA
nA
nA
V
V
V
−
300
−
fT
50
−
−
MHz
Cobo
ton
toff
−
−
95
1600
5
pF
-
nS
−
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -320V
VCES = -320V
VEB = -5V
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
IC = -50mA, IB = -5mA
IC = -50mA, VCE = -10V
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
VCE = -20V, IC = -10mA
f = 20MHz
VCB = -20V. f = 1MHz
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FZT558
Document number: DS33139 Rev.3 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT558
Document number: DS33139 Rev.3 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
X1
X2
Y1
Y2
C1
C2
C1
Y2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
X2
FZT558
Document number: DS33139 Rev.3 - 2
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FZT558
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Copyright © 2012, Diodes Incorporated
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FZT558
Document number: DS33139 Rev.3 - 2
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