NJ6N80 POWER MOSFET 6.0A 800V N-CHANNEL POWER MOSFET DESCRIPTION The NJ6N80 is a N-channel mode power MOSFET using advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. 1 TO-220 FEATURES * VDS = 800V * ID = 6.0A * RDS(on) = 2.0 ohm @VGS = 10 V * Improved dv/dt capability *Fast switching * 100% avalanche tested 1 TO-220F SYMBOL ORDERING INFORMATION Ordering Number Package NJ6N80-LI NJ6N80-BL NJ6N80F-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tube NJ6N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳʳ ʳ ʳʳ ʳʳʳ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous ID 6 A Drain Current (Note 1) 22 A Pulsed IDM Single Pulsed (Note 2) EAS 680 mJ Avalanche Energy 15.8 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 W 138 Power Dissipation PD 51 W TO-220F Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C 3. ISD 5.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL șJA Junction to Ambient Junction to Case TO-220 TO-220F șJC RATINGS 62.5 0.9 2.45 UNIT °C/W °C/W °C/W TO-220F NJ6N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳ ʳ ʳʳʳ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS ID=250μA, VGS=0V ϦBVDSS/ϦTJ Reference to 25°C, ID=250μA VDS=800V, VGS=0V IDSS VDS=640V, TC=125°C VGS=+30V, VDS=0V IGSS VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A Forward Transconductance gFS VDS=50V, ID=3A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=640V, ID=6A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=400V, ID=6A, RG=25 (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=6A, VGS=0V Reverse Recovery Time trr IS=6A, VGS=0V, dIF/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 800 V V/°C 0.97 10 100 100 -100 3.0 1.6 5.4 5.0 2.0 μA nA nA V S 1010 1310 pF 90 115 pF 8 11 pF 21 6 9 26 65 47 44 30 60 140 105 90 6 22 1.4 615 5.4 nC nC nC ns ns ns ns A A V ns μC NJ6N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳ ʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT QG 12V 10V 200nF 50k VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID IAS L 10V ID(t) tP DUT VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms NJ6N80 POWER ʳ ʳʳ ʳ MOSFET ʳʳ ʳʳʳ ʳ ʳ ʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L - ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop