Sanyo ENA1030 P-channel silicon mosfet general-purpose switching device application Datasheet

FW705
Ordering number : ENA1030
SANYO Semiconductors
DATA SHEET
FW705
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
Composite type with a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
--20
V
±10
V
--6
A
ID
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
--52
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (1500mm2✕0.8mm) 1unit, PW≤10s
2.3
W
Total Dissipation
When mounted on ceramic substrate (1500mm2✕0.8mm), PW≤10s
Channel Temperature
PT
Tch
Storage Temperature
Tstg
2.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W705
Symbol
V(BR)DSS
IDSS
Conditions
ID=--1mA, VGS=0V
Ratings
min
typ
Unit
max
--20
V
VDS=--20V, VGS=0V
--1
μA
±10
μA
IGSS
VGS(off)
VGS= ±8V, VDS=0V
VDS=--10V, ID=--1mA
⏐yfs⏐
RDS(on)1
VDS=--10V, ID=--6A
ID=--6A, VGS=--4V
30
40
mΩ
RDS(on)2
ID=--3A, VGS=--2.5V
42
59
mΩ
--0.4
7.8
--1.4
13
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21308PA TI IM TC-00001209 No. A1030-1/4
FW705
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
typ
pF
245
pF
ns
390
ns
ns
See specified Test Circuit.
110
See specified Test Circuit.
145
ns
VDS=--10V, VGS=--4V, ID=--6A
VDS=--10V, VGS=--4V, ID=--6A
18.4
nC
3.2
nC
VDS=--10V, VGS=--4V, ID=--6A
IS=--6A, VGS=0V
5.2
--0.82
nC
--1.2
V
Electrical Connection
8
7
6
5
1
2
3
4
0.3
4.4
6.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
4
0.2
1.5
1.8 MAX
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
0.1
1.27
0.595
pF
260
See specified Test Circuit.
5
5.0
1720
19
unit : mm (typ)
7005-003
1
Unit
max
See specified Test Circuit.
Package Dimensions
8
min
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
td(off)
tf
Fall Time
Ratings
Conditions
SANYO : SOP8
Switching Time Test Circuit
VIN
VDD= --10V
0V
--4V
ID= --6A
RL=1.67Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
FW705
P.G
50Ω
S
No. A1030-2/4
FW705
VGS= --1.0V
--2
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
70
--6A
60
ID= --3A
40
30
20
10
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
--1.4
--1.6
--1.8
--2.0
IT09897
70
60
=
VGS
50
=
V, I D
--2.5
--3A
= --6A
V, I D
--4.0
V GS=
40
30
20
10
--40
--20
0
20
40
60
80
100
120
140
160
IT09900
IS -- VSD
--10
7
5
VGS=0V
3
2
1.0
7
5
3
--1.0
7
5
3
2
--0.1
7
5
--25°
C
C
5°
°C
--2
75
=
Ta
3
2
25°C
°C
25
5
5°C
Source Current, IS -- A
7
--0.5
--0.6
--0.7
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
--0.01
--0.3
5 7 --10
IT09901
3
td(off)
2
tf
100
7
tr
5
td(on)
--1.0
--1.1
IT09902
f=1MHz
Ciss
2
1000
7
5
Coss
Crss
3
3
2
--0.9
3
Ciss, Coss, Crss -- pF
5
--0.8
Ciss, Coss, Crss -- VDS
5
VDD= --10V
VGS= --4V
7
--0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
10
--0.01
--1.2
Ambient Temperature, Ta -- °C
10
0.1
--0.01
--1.0
80
IT09898
VDS= --10V
2
--0.8
RDS(on) -- Ta
0
--60
--8
⏐yfs⏐ -- ID
3
--0.6
90
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
--1
--0.4
Gate-to-Source Voltage, VGS -- V
Ta=25°C
90
0
--0
--0.2
IT09896
RDS(on) -- VGS
100
50
0
--1.0
Ta=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--3
--1
0
Forward Transfer Admittance, ⏐yfs⏐ -- S
--4
--25
°C
--2
--5
25
°C
--3
--6
Ta
=7
5°C
Drain Current, ID -- A
--1.5V
--1
Switching Time, SW Time -- ns
VDS= --10V
--7
--5.0
V
--4
ID -- VGS
--8
--2
.0V
--4.0V
--2.5
--8.0V --6.0V
Drain Current, ID -- A
--5
V
ID -- VDS
--6
2
100
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT09903
0
--5
--10
--15
Drain-to-Source Voltage, VDS -- V
--20
IT09904
No. A1030-3/4
FW705
VGS -- Qg
--3.5
Drain Current, ID -- A
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
18
20
When mounted on ceramic substrate
(1500mm2✕0.8mm), PW≤10s
2.5
2.4
2.3
2.0
1.6
To
t
1.2
1u
al
Di
ss
ni
t
ip
ati
on
0.8
0.4
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
--10
7
5
3
2
140
160
IT13259
≤10μs
IDP= --52A
1m
s
10
ms
10
0m
s
ID= --6A
DC
10
op
era
--1.0
7
5
3
2
s
tio
Operation in this area
is limited by RDS(on).
--0.1
7
5
3
2
n(
Ta
=2
5°
C)
Ta=25°C
Single pulse
When mounted on ceramic substrate (1500mm2✕0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2 3
IT13258
Drain-to-Source Voltage, VDS -- V
IT09906
PD -- Ta
2.8
ASO
--100
7
5
3
2
VDS= --10V
ID= --6A
Allowable Power Dissipation, PD (FET1) -- W
Gate-to-Source Voltage, VGS -- V
--4.0
PD(FET1) -- PD(FET2)
3.0
When mounted on ceramic substrate
(1500mm2✕0.8mm), PW≤10s
2.5
2.3
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.3 2.5
Allowable Power Dissipation, PD (FET2) -- W
3.0
IT13325
Note on usage : Since the FW705 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1030-4/4
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