LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issued Issue Date Jan.04.2017 Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION Fast access time : 10ns Low power consumption: Operating current : 125mA (TYP.) Standby current : 4mA (TYP.) Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : B0# (DQ0 ~ DQ7) B1# (DQ8 ~ DQ15) B2# (DQ16~DQ23) B3# (DQ24~DQ31) Data retention voltage : 1.5V (MIN.) Green package available Package : 90-ball 8mm x 13mm TFBGA The LY61L25732A is a 8M-bit high speed CMOS static random access memory organized as 256K words by 32 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L25732A operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY61L25732A LY61L25732A(I) Operating Temperature 0 ~ 70℃ -40 ~ 85℃ VCC Range Speed 2.7 ~ 3.6V 2.7 ~ 3.6V 10ns 10ns FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A17 DECODER 256Kx32 MEMORY ARRAY DQ0-DQ7 DQ8-DQ15 DQ16-DQ23 I/O DATA CIRCUIT COLUMN I/O DQ24-DQ31 CE# CE2 WE# OE# B0#-B3# Power Dissipation Standby(ISB1,TYP.) Operating(ICC,TYP.) 4mA 125mA 4mA 125mA SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 - DQ31 Data Inputs/Outputs CE#, CE2 Chip Enable Input WE# Write Enable Input OE# Output Enable Input B0# - B3# Byte Control VCC Power Supply VSS Ground NC No Connection CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 PIN CONFIGURATION A DQ1 DQ0 Vss Vcc DQ31 DQ30 B DQ2 Vcc Vcc C Vss DQ3 DQ4 DQ27 DQ28 Vcc D Vss DQ6 DQ5 DQ26 DQ25 Vcc E Vcc DQ7 NC NC DQ24 Vss F Vss B0# A3 A4 B3# Vcc G A0 A1 A2 A10 A5 A6 H A15 A14 A13 A8 A7 A11 J CE2 A17 A16 A9 A12 CE# K B1# NC OE# WE# B2# L Vcc DQ8 Vss Vcc DQ23 Vss M Vss DQ9 DQ10 DQ21 DQ22 Vcc N Vss DQ12 DQ11 DQ20 DQ19 Vcc P DQ13 Vcc R DQ14 DQ15 Vss 1 Vss Vcc Vss DQ29 LY61L25732A XXXXXXXX XXXXXXXX NC Vss Vss DQ18 Vcc DQ16 DQ17 2 3 7 8 TFBGA(See through with Top View) 9 TFBGA (Top View) Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# CE2 OE# WE# B0# B1# B0# B1# H X L L L L L L L L L L L L X L H H H H H H H H H H H H X X H X L L L L L X X X X X X X H X H H H H H L L L L L X X X H L H H H L L H H H L X X X H H L H H L H L H H L X X X H H H L H L H H L H L X X X H H H H L L H H H L L I/O OPERATION DQ8-15 DQ16-23 DQ24-31 CURRENT High-Z High-Z High-Z High-Z DOUT High-Z High-Z High-Z DOUT DIN High-Z High-Z High-Z DIN High-Z High-Z High-Z High-Z High-Z DOUT High-Z High-Z DOUT High-Z DIN High-Z High-Z DIN H = VIH, L = VIL, X = Don't care. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 SUPPLY DQ0-7 High-Z High-Z High-Z High-Z High-Z High-Z DOUT High-Z DOUT High-Z High-Z DIN High-Z DIN High-Z High-Z High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z High-Z High-Z DIN DIN ISB1 ICC ICC ICC LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 DC ELECTRICAL CHARACTERISTICS PARAMETER Supply Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Average Operating Power supply Current Standby Power Supply Current SYM. TEST CONDITION VCC VIH*1 VIL*2 ILI VCC ≧ VIN ≧ VSS VCC ≧ VOUT ≧ VSS, ILO Output Disabled VOH IOH = -4mA VOL IOL = 8mA CE# ≦ 0.2V and CE2 ≧ VCC-0.2V, ICC other pins at 0.2V or VCC-0.2V, II/O = 0mA; f=max. CE# ≧ VCC - 0.2V; ISB1 other pins at 0.2V or VCC-0.2V. MIN. 2.7 2.2 - 0.3 -1 TYP. *4 MAX. 3.3 3.6 VCC+0.3 0.8 1 -1 - 1 µA 2.4 - - 0.4 V V -10 - 125 180 mA -12 - 115 170 mA - 4 40 mA Notes: 1. VIH(MAX.) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(MIN.) = VSS - 2.0V for pulse width less than 6ns. 3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX. 8 10 Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Speed Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 10/12ns 0.2V to VCC-0.2V 3ns VCC/2 CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 UNIT V V V µA UNIT pF pF LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change Byte Control Access Time Byte Control to High-Z Output Byte Control to Low-Z Output SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH tBA tBHZ* tBLZ* LY61L25732A-10 MIN. MAX. 10 10 10 4.5 2 0 4 4 2 4.5 4 0 - LY61L25732A-12 MIN. MAX. 12 12 12 5 3 0 5 5 2 5 5 0 - LY61L25732A-10 MIN. MAX. 10 8 8 0 8 0 6 0 2 4 8 - LY61L25732A-12 MIN. MAX. 12 10 10 0 10 0 7 0 2 5 10 - UNIT ns ns ns ns ns ns ns ns ns ns ns ns (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z Byte Control Valid to End of Write SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW * tWHZ* tBW *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 UNIT ns ns ns ns ns ns ns ns ns ns ns LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 B0#-B3# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, CE2 = high, and B0#, B1#, B2# or B3# = low. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high, and B0#, B1#, B2# or B3# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 WRITE CYCLE 1 (WE# Controlled) (1,2,4,5) tWC Address tAW CE# tCW CE2 tBW B0#-B3# tAS tWP tWR WE# tWHZ Dout tOW High-Z (4) (4) tDW Din tDH Data Valid WRITE CYCLE 2 (CE# and CE2 Controlled) (1,4,5) tWC Address tAW CE# tAS tWR tCW CE2 tBW B0#-B3# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 WRITE CYCLE 3 (B0# ~ B3# Controlled) (1,4,5) tWC Address tAW tWR CE# tAS tCW CE2 tBW B0#-B3# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.A write occurs during the overlap of a low CE#, high CE2, low WE#, and B0#, B1#, B2# or B3# = low. 2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 3.During this period, I/O pins are in the output state, and input signals must not be applied. 4.If the CE#, B0# ~ B3# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention SYMBOL TEST CONDITION VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V VCC = 1.5V Data Retention Current IDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V Other pins at 0.2V or VCC-0.2V Chip Disable to Data tCDR See Data Retention Waveforms (below) Retention Time Recovery Time tR tRC* = Read Cycle Time MIN. 1.5 TYP. - MAX. 3.6 UNIT V - 4 40 mA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM Low VCC Data Retention Waveform (1) (CE# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Low VCC Data Retention Waveform (2) (CE2 controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ≦ 0.2V VIL VIL Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 LY61L25732A Rev. 1.0 256K X 32 BIT HIGH SPEED CMOS SRAM PACKAGE OUTLINE DIMENSION 90-ball 8mm × 13mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 LY61L25732A 256K X 32 BIT HIGH SPEED CMOS SRAM Rev. 1.0 ORDERING INFORMATION Package Type 90-ball Access Time Temperature (Speed/ns) Range(℃) 10 0℃~70℃ (8mm x 13mm) TFBGA -40℃~85℃ Packing Type Tray Tape Reel Tray Tape Reel Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 Lyontek Item No. LY61L25732AGL-10 LY61L25732AGL-10T LY61L25732AGL-10I LY61L25732AGL-10IT LY61L25732A Rev. 1.0 256K X 32 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12