Data Sheet OptiMOSTM-T2 Power-Transistor IPB180N04S4L-01 Product Summary VDS 40 V RDS(on) 1.2 mΩ ID 180 A Features • N-channel Logic Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Value 180 Unit A 180 Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse E AS I D=90 A 550 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - +20/-16 V Power dissipation P tot T C=25 °C 188 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-06-03 Data Sheet Parameter Symbol IPB180N04S4L-01 Values Conditions Unit min. typ. max. - - 0.8 40 - - Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=140 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.06 1 - 1 20 V DS=18 V, V GS=0 V, T j=85 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 1.3 1.6 mΩ V GS=10 V, I D=100 A - 1.0 1.2 Rev. 1.0 page 2 2013-06-03 Data Sheet Parameter Symbol IPB180N04S4L-01 Values Conditions Unit min. typ. max. - 14700 19100 pF - 2400 3120 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 120 280 Turn-on delay time t d(on) - 20 - Rise time tr - 21 - Turn-off delay time t d(off) - 90 - Fall time tf - 80 - Gate to source charge Q gs - 42 55 Gate to drain charge Q gd - 11 25 Gate charge total Qg - 188 245 Gate plateau voltage V plateau - 2.9 - V - - 180 A - - 720 - 0.9 1.3 V - 70 - ns - 95 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=180 A, R G=3.5 Ω ns Gate Charge Characteristics2) V DD=32 V, I D=180 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.8 K/W the chip is able to carry 300 A at 25°C. 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2013-06-03 Data Sheet IPB180N04S4L-01 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 200 200 180 175 160 150 140 120 ID [A] Ptot [W] 125 100 100 80 75 60 50 40 25 20 0 0 0 50 100 150 0 200 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 10 µs 0.5 100 µs 0.1 1 ms 10-1 0.05 ID [A] ZthJC [K/W] 100 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 0.01 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-06-03 Data Sheet IPB180N04S4L-01 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 14 10 V 3V 4.5 V 3.5 V 600 12 4V 4V 500 10 RDS(on) [mΩ] ID [A] 400 300 3.5 V 8 6 200 4 100 2 4.5 V 3V 10 V 0 10 V 0 0 1 2 3 4 0 5 180 360 540 720 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 720 2 -55 °C 25 °C 175 °C 630 1.75 540 1.5 RDS(on) [mΩ] ID [A] 450 360 1.25 270 1 180 0.75 90 0.5 0 1 2 3 4 5 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2013-06-03 Data Sheet IPB180N04S4L-01 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 2 1.75 1400 µA Ciss 104 1.5 140 µA Coss C [pF] VGS(th) [V] 1.25 1 103 0.75 Crss 102 0.5 0.25 101 0 -60 -20 20 60 100 140 0 180 5 10 Tj [°C] 15 20 25 30 VDS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 25 °C 175 °C IAV [A] IF [A] 100 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 150 °C 1 10 100 1000 tAV [µs] page 6 2013-06-03 Data Sheet IPB180N04S4L-01 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 52 1250 1000 48 750 44 VBR(DSS) [V] EAS [mJ] 45 A 90 A 500 40 180 A 36 250 32 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 10 V GS 9 Qg 8 7 8V 32 V VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 40 80 120 160 200 Qgate [nC] Rev. 1.0 page 7 2013-06-03 Data Sheet IPB180N04S4L-01 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2013 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-06-03 Data Sheet IPB180N04S4L-01 Revision History Version Date Changes Revision 1.0 Rev. 1.0 03.06.2013 Data Sheet page 9 2013-06-03