ON NTMFS4H11NFT1G Power mosfet Datasheet

NTMFS4H11NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
•
•
•
•
•
Integrated Schottky Diode
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
•
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VGS
MAX RDS(on)
TYP QGTOT
4.5 V
1.0 mW
37.8 nC
10 V
0.7 mW
82 nC
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers
Point of Load
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain-to-Source Voltage
Parameter
VDSS
25
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current RqJA (Note 1)
ID
54
A
Power Dissipation RqJA (Note 1)
PD
3.2
W
Continuous Drain Current RqJC (Note 1)
ID
334
A
Power Dissipation RqJC (Note 1)
PD
125
W
Pulsed Drain Current (tp = 10 ms)
IDM
568
A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 57 Apk, L = 0.3 mH)
EAS
487
mJ
Drain to Source dV/dt
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D
(5, 6)
S
(1, 2, 3)
G
(4)
dV/dt
7
V/ns
TJ(max)
150
°C
TSTG
−55 to
150
°C
TSLD
°C
260
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 37 A, EAS = 205 mJ.
THERMALCHARACTERISTICS
Parameter
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
Symbol
Max
RqJA
RqJC
38.9
1.0
Units
°C/W
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 0
1
Publication Order Number:
NTMFS4H11NF/D
NTMFS4H11NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 10 mA reference to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 20 V
V
16
TJ = 25°C
VDS = 0 V, VGS = +20 V
mV/°C
500
mA
+100
nA
ON CHARACTERISTICS (Note 5)
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
ID = 10 mA reference to 25°C
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.1
3.7
VGS = 10 V
ID = 30 A
0.56
0.7
VGS = 4.5 V
ID = 30 A
0.79
1
gFS
VDS = 12 V, ID = 20 A
V
mV/°C
101
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
5538
VGS = 0 V, f = 1 MHz, VDS = 12 V
CRSS
175.3
Total Gate Charge
QG(TOT)
37.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
Gate Resistance
pF
3416
2.3
VGS = 4.5 V, VDS = 12 V; ID = 30 A
nC
11.8
8
QG(TOT)
VGS = 10 V, VDS = 12 V; ID = 30 A
82
RG
TA = 25°C
1.3
nC
2
W
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
16.9
VGS = 4.5 V, VDD = 12 V, ID = 15 A,
RG = 3.0 W
tf
42.3
ns
46.3
30.9
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10.9
VGS = 11.5 V, VDD = 12 V,
ID = 15 A, RG = 3.0 W
tf
33.2
ns
58.3
23.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.35
TJ = 125°C
0.27
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2.0 A
0.6
V
66.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
33.1
ns
33.6
90
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4H11NF
TYPICAL CHARACTERISTICS
200
180
VGS = 10 V to 3 V
140
ID, DRAIN CURRENT (A)
VGS = 2.8 V
160
TJ = 25°C
120
100
VGS = 2.6 V
80
VGS = 2.4 V
60
40
VGS = 2.2 V
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
140
120
100
80
TJ = 125°C
60
TJ = 25°C
40
20
TJ = −55°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0018
3.0
1.0E−03
0.0016
ID = 30 A
T = 25°C
VGS = 4.5 V
8.0E−04
0.0014
0.0012
VGS = 10 V
6.0E−04
0.0010
0.0008
4.0E−04
0.0006
0.0004
2.0E−04
0.0002
0
3
4
5
6
7
8
9
10
1.5
30
40
50
60
70
80
90
100 110 120
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1E−01
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
TJ = 125°C
1E−02
1.4
1.3
1.2
TJ = 85°C
1E−03
1.1
1.0
1E−04
0.9
0.8
0.7
−50
20
IDSS, LEAKAGE (A)
1.6
0E+00
VGS (V)
1.7
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS = 5 V
160
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
180
TJ = 25°C
1E−05
−25
0
25
50
75
100
125
150
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
25
NTMFS4H11NF
TYPICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
8000
7000
Ciss
6000
5000
Coss
4000
3000
2000
1000
0
Crss
0
5
10
15
20
8
6
Qgs
4
Qgd
TJ = 25°C
VGS = 10 V
VDD = 12.0 V
ID = 30 A
2
0
0
10
20
30
40
50
60
70
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
25
td(off)
VGS = 0 V
td(on)
100
90
80
Qg, TOTAL GATE CHARGE (nC)
VDD = 12 V
ID = 15 A
VGS = 10 V
t, TIME (ns)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
tr
tf
10
20
15
TJ = 125°C
TJ = 25°C
10
5
0
1
1
10
0.2
100
0.3
0.4
0.5
0.6
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 ms
100
1 ms
10
10 ms
0 V < VGS < 10 V
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
0.01
0.1
1
dc
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
10
25
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
9000
VGS, GATE−TO−SOURCE VOLTAGE (V)
10,000
100
220
200
ID = 37 A
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTMFS4H11NF
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
R(t) (°C/W)
10
2%
1%
1
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1E+03
400
ID, DRAIN CURRENT (A)
350
GFS (S)
300
1E+02
250
200
150
1E+01
100
50
1E+00
0
0
20
40
60
80
100
120
140
160
1E−07 1E−06
1E−05
1E−04
1E−03
ID (A)
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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5
1E−02
NTMFS4H11NF
ORDERING INFORMATION
Package
Shipping†
NTMFS4H11NFT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
NTMFS4H11NFT3G
SO8−FL
(Pb-Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING
DIAGRAM
D
S
S
S
G
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
4H11NF
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
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NTMFS4H11NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
e/2
L
1
1.000
4
K
0.965
1.330
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.905
2X
0.495
4.530
3.200
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NTMFS4H11NF/D
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