GeneSiC GC10MPS12-252 Silicon carbide power schottky diode Datasheet

GC10MPS12-252
1200 V SiC MPS™ Diode
Silicon Carbide Power
Schottky Diode
VRRM
IF (Tc = 1335°C)
QC
Features
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=
=
=
1200 V
22 A
56 nC
Package
High Avalanche (UIS) Capability
Enhanced Surge Current Capability
175 °C Maximum Operating Temperature
Temperature Independent Switching Behavior
Positive Temperature Coefficient Of VF
Extremely Fast Switching Speeds
Superior Figure of Merit QC/IF
case
2
1
TO-252-2L
Advantages
Applications
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Low Standby Power Losses
Improved Circuit Efficiency (Lower Overall Cost)
Low Switching Losses
Ease of Paralleling Devices without
ithout Thermal Runaway
Smaller Heat Sink Requirements
Low Reverse Recovery Current
Low Device Capacitance
Low Reverse Leakage Current att Operating Temperature
Power Factor Correction (PFC)
Switched-Mode
Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Non-Repetitive Peak Forward Surge Current,
Half Sine Wave
Repetitive Peak Forward Surge Current, Half
Sine Wave
Non-Repetitive Peak Forward Surge Current
I2t Value
Non-Repetitive Avalanche Energy
Diode Ruggedness
Power Dissipation
Operating and Storage Temperature
Symbol
VRRM
IF
IF,SM
IF,RM
IF,max
∫i2 dt
EAS
dV/dt
Ptot
Tj , Tstg
Conditions
Values
1200
45
22
10
81
65
50
35
860
30
150
100
345
-55
55 to 175
TC = 25 °C, D = 1
TC = 135 °C, D = 1
TC = 165 °C, D = 1
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
L = 5 mH, IAV = 10 A, VDD = 60 V
VR = 0 ~ 960 V
TC = 25 °C
Unit
V
A
A
A
A
A2s
mJ
V/µs
W
°C
Electrical Characteristics
Parameter
Symbol
Diode Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Switching Time
ts
Total Capacitance
C
Conditions
IF = 10 A, Tj = 25 °C
IF = 10 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
VR = 400 V
IF ≤ IF,MAX
VR = 800 V
dIF/dt = 200 A/μs
VR = 400 V
Tj = 175 °C
VR = 800 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 800 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.5
2.3
1
8
37
56
max.
1.8
2.7
14
95
Unit
V
µA
nC
< 10
ns
616
41
pF
0.43
°C/W
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case
Feb 2018 Rev1.1
RthJC
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 1 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
IF = f(VF,Tj); tP = 300 µss
IF = f(VF,Tj); tP = 300 µs
Figure 1: Typical Forward Characteristics
Figure 2: Typical High Current Forward
Characteristics
IR = f(VR,Tj)
Ptot = f(Tj)
Figure 3: Typical Reverse Characteristics
Figure 4: Power Derating Curve
Feb 2018 Rev1.1
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Page 2 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
IF = f(TC); D = tP/T, tP= 10 µs
C = f(VR); Tj = 25 °C;; f = 1MHz
Figure 5: Current Derating Curves
Figure 6: Typical Junction Capacitance vs
Reverse Voltage Characteristics
Qc = f(VR); Tj = 25 °C;; f = 1MHz
EC = f(VR); Tj = 25 °C;; f = 1MHz
Figure 7: Typical Capacitive Charge vs.
Reverse Voltage Characteristics
Figure 8: Typical Capacitive Energy vs.
Reverse Voltage Characteristics
Feb 2018 Rev1.1
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Page 3 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
Zth,jc = f(tP,D); D = tP/T
Figure 9: Transient Thermal Impedance
IF = (VF – VBI)/RDIFF
Built-In Voltage (VBI):
VBI(Tj) = m*Tj + b,
m = -1.32e-03,
03, b = 0.915
Differential Resistance (RDIFF):
RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω);
a = 7.30e-05,
05, b = 8.99e-03,
8.99e
c = 2.26
IF = f(VF, Tj)
Figure 10:: Forward Curve Model
Feb 2018 Rev1.1
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Page 4 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
Package Dimensions:
TO-252-2L
PACKAGE OUTLINE
0.265 (6.73)
0.252 (6.40)
0.094 (2.38)
0.087 (2.20)
0.050 (1.27)
0.035 (0
0.89)
0.215 (5.46)
0.205 (5.21)
0.023 (0.58)
0.018 (0.46)
SEATING
PLANE
0.409 (10.40)
(
0.370 (9.40)
0.245 (6.22)
0.236 (6.00)
0.173
173 (4.40)
min
0.205 (5.21)
min
0.005 (0.127) max
0.045 (1.14)
0.030 (0.77)
0.090 BSC
(2.286 BSC)
0.035 (0
0.88)
0.025 (0
0.64)
0.023 (0.58)
0.018 (0.46)
0.070 (1.77)
0.055 (1.40)
0.1080 REF
(2.743 REF)
0.020 BSC
(0.508 BSC)
0.180 BSC
(4.572 BSC)
Recommended Solder Pad Layout
0.236 (6.00)
0.256 (6.50)
0.246 (6.25)
0.118 (3.00)
0.055 (1.40)
0.090 (2.29)
0.055 (1.40)
0.090 (2.29
29)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 5 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented
ented January 2, 2013. RoHS Declarations for this product can be obtained from your
GeneSiC representative.
REACH Compliance
REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical
Chemi Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a
GeneSiC representative to insure you get the most up
up-to-date REACH SVHC Declaration. REACH
REAC banned substance
information (REACH Article 67)
7) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the
human body nor in applications in which failure of the product could lead to death, personal injury or property damage,
including but not limited to equipment used in the operation of nuclear facilities, life
life-support
support machines, cardiac
defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air
traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or
implied to any intellectual property rights is granted by this document.
Related Links
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Soldering Document: http://www.genesicsemi.com/quality/quality
http://www.genesicsemi.com/quality/quality-manual/
Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/
Reliability Report: http://www.genesicsemi.com/quality/reliability/
Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice
Feb 2018
Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Page 6 of 6
GC10MPS12-252
1200 V SiC MPS™ Diode
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC10MPS12
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC10MPS12-252_SPICE.pdf)
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC10MPS12
into LTSPICE (version 4) software
tware for simulation of the G
GC10MPS12-252.
*
GeneSiC Semiconductor SiC MPS TM Rectifier
*
Revision: 1.1
*
Date: February-2018
**************************************************************************
**
TO-252-2
2 package
**************************************************************************
.SUBCKT GC10MPS12 A K Case
L_anode
A
AD
6n
D1
AD
Case
GC
GC10MPS12
L_cathode K
Case
6n
.ends
**************************************************************************
.SUBCKT GC10MPS12
12 ANODE KATHODE
D1 ANODE KATHODE GC10MPS12_SCHOTTKY
12_SCHOTTKY
.MODEL GC10MPS12_SCHOTTKY
12_SCHOTTKY D
+ IS
8.721E-15
15
RS
0.062
+ N
1
IKF
500
+ EG
1.2
XTI
2
+ TRS1
0.005434
TRS2
2.717E-05
+ CJO
8.59E-10
VJ
0.879
+ M
0.438
FC
0.5
+ TT
1.00E-10
BV
1600
+ IBV
1E-06
VPK
1200
+ IAVE
10
TYPE
SiC_MPSTM
+ MFG
GeneSiC_Semi
.ENDS
* End of GC10MPS12-252 SPICE Model
**************************************************************************
* This model is provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND
* EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED
* WARRANTIES OF MERCHANTABILITY A
AND
ND FITNESS FOR A PARTICULAR PURPOSE."
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 1 of 1
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