CEL NX6342EP 1 310 nm algainas mqw-dfb laser diode for 10 gb/s base-lr/lw application Datasheet

A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6342EP
Data Sheet
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s BASE-LR/LW APPLICATION
R08DS0050EJ0100
Rev.1.00
Jan 19, 2012
DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 10 Gb/s BASE-LR/LW (IEEE802.3ae)
FEATURES
•
•
•
•
•
•
•
Optical output power
Low threshold current
Differential efficiency
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
Focal point
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
PO = 8.5 mW
Ith = 8 mA
ηd = 0.23 W/A
TC = −5 to +85°C
φ 5.6 mm
6.0 mm
Page 1 of 5
A Business Partner of Renesas Electronics Corporation.
NX6342EP
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
*2
(f 5.6)
*2
(f 4.2)
*2
1.0±0.1
BOTTOM VIEW
1
110°±2°
(0.3)
*2
(f 3.55)
(0.3)
4
2
*2
3
*1
6.0±0.4
*2
PIN CONNECTION
1
(3.0)
15.0±1.0 1.2±0.1 3.87±0.3
f 2.0
Focal Point
D x = ±200 m m MAX.
D y = ±200 m m MAX.
LD
4
2
Reference
Plane
3 PD
4– f 0.45
f 2.0
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
Page 2 of 5
A Business Partner of Renesas Electronics Corporation.
NX6342EP
Chapter Title
ORDERING INFORMATION
Part Number
NX6342EP$=
Package
4-pin CAN with ball lens cap
Pin Connections
1
2
LD
4
3 PD
Remarks 1. The color of ball lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
Page 3 of 5
A Business Partner of Renesas Electronics Corporation.
NX6342EP
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
PO
IF
VR
IF
VR
TC
Tstg
Tsld
RH
Ratings
15
120
2.0
10.0
15
−5 to +85
−40 to +95
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL
Parameter
Bias Current
Symbol
Ibias
Conditions
TC = 25°C
MIN.
−
TYP.
30
MAX.
−
Unit
mA
MIN.
−
−
−
−
−
0.23
0.13
1 290
35
−
−
100
−
−
−
TYP.
10.3125
8.5
−
8
−
−
−
−
−
−
−
−
−
−
−
MAX.
−
−
2.0
15
30
−
−
1 330
−
50
50
1 000
10
100
20
Unit
Gb/s
mW
V
mA
−0.9
−
0.9
dB
ELECTRO-OPTICAL CHARACTERISTICS
(TC = −5 to +85°C, CW, BOL, unless otherwise specified)
Parameter
Signalling Rate
Optical Output Power
Operating Voltage
Threshold Current
Symbol
Differential Efficiency
ηd
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
Monitor PD Terminal
Capacitance
Tracking Error *2
Note:
PO
Vop
Ith
λp
SMSR
tr
tf
Im
ID
Ct
γ
Conditions
PO = 8.5 mW
TC = 25°C
PO = 8.5 mW, TC = 25°C
PO = 8.5 mW
PO = 8.5 mW
PO = 8.5 mW
20-80% *1
80-20% *1
VR = 1.5 V, PO = 8.5 mW
VR = 3.3 V, TC = 25°C
VR = 3.3 V
VR = 3.3 V, f = 1 MHz
Im = const. (@PO = 8.5 mW,
TC = 25°C)
W/A
nm
dB
ps
ps
μA
nA
pF
1. 10.3125 Gb/s, PRBS 231 − 1, NRZ, Duty Cycle = 50%
2. Tracking Error: γ
Po
γ = 10 log
(mW)
Po
8.5
[dB]
TC = 25°C
8.5
TC = –5 to +85°C
Po
0
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
Im
Im
(mA)
Page 4 of 5
A Business Partner of Renesas Electronics Corporation.
NX6342EP
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
Page 5 of 5
Revision History
NX6342EP Data Sheet
Rev.
Date
Page
1.00
Jan 19, 2012
−
Description
Summary
First edition issued
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C-1
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